公开(公告)号：US20170271380A1

公开(公告)日：2017-09-21

申请号：US15454292

申请日：2017-03-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Masakatsu OHNO ,  Hiroki ADACHI

IPC: H01L27/12 ,  H01L21/683 ,  H01L51/56 ,  H01L21/02

CPC classification number: H01L27/1266 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02318 ,  H01L21/6835 ,  H01L51/56 ,  H01L2221/68395 ,  H01L2251/566

Abstract: A peeling method of one embodiment of the present invention includes a first step of forming a first insulating layer over a substrate; a second step of forming a second insulating layer over the first insulating layer; a third step of forming a peeling layer over the second insulating layer; a fourth step of performing plasma treatment on a surface of the peeling layer; a fifth step of forming a third insulating layer over the peeling layer; a sixth step of performing heat treatment; and a seventh step of separating the peeling layer and the third insulating layer from each other. The first insulating layer and the third insulating layer each have a function of blocking hydrogen and for example, include a silicon nitride film or the like. The second insulating layer has a function of releasing hydrogen by heating and for example, includes a silicon oxide film.

公开(公告)号：US20170092885A1

公开(公告)日：2017-03-30

申请号：US15252295

申请日：2016-08-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya SAKUISHI ,  Yutaka UCHIDA ,  Hiroki ADACHI ,  Saki EGUCHI ,  Junpei YANAKA ,  Kayo KUMAKURA ,  Seiji YASUMOTO ,  Kohei YOKOYAMA ,  Akihiro CHIDA

IPC: H01L51/00 ,  B32B37/10 ,  B32B37/02 ,  B32B37/18

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

公开(公告)号：US20150236280A1

公开(公告)日：2015-08-20

申请号：US14621914

申请日：2015-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya SAKUISHI ,  Yutaka UCHIDA ,  Hiroki ADACHI ,  Saki EGUCHI ,  Junpei YANAKA ,  Kayo KUMAKURA ,  Seiji YASUMOTO ,  Kohei YOKOYAMA ,  Akihiro CHIDA

IPC: H01L51/00 ,  H01L27/32 ,  B32B38/10 ,  B32B7/02 ,  B32B37/02 ,  B32B37/18 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Abstract translation: 提供了灵活的设备。 柔性装置的粘合层的硬度设定为高于70°的肖氏D值，或优选高于或等于邵氏D的80°。挠性装置的柔性基板的膨胀系数设定得较小 比58ppm /℃，或优选小于或等于30ppm /℃

公开(公告)号：US20150140732A1

公开(公告)日：2015-05-21

申请号：US14578891

申请日：2014-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO ,  Shun MASHIRO ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/44 ,  C23C16/308 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67167 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

Abstract translation: 本发明的目的是高速驱动半导体器件或提高半导体器件的可靠性。 在半导体器件的制造方法中，其中在绝缘性的衬底上形成栅电极，在栅电极上形成栅极绝缘膜，并且在栅极绝缘膜上形成氧化物半导体膜，栅极 通过使用高密度等离子体的沉积处理形成绝缘膜。 因此，栅极绝缘膜中的悬挂键减少，并且栅极绝缘膜和氧化物半导体之间的界面的质量得到改善。

公开(公告)号：US20210020668A1

公开(公告)日：2021-01-21

申请号：US16983394

申请日：2020-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

IPC: H01L27/12 ,  B23K26/351 ,  H01L51/00 ,  H01L51/56

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US20200243371A1

公开(公告)日：2020-07-30

申请号：US16850185

申请日：2020-04-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Shingo EGUCHI ,  Kunihiko SUZUKI

IPC: H01L21/683 ,  H01L51/00 ,  H01L21/67 ,  H01L51/50 ,  B32B38/10

Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

公开(公告)号：US20200067027A1

公开(公告)日：2020-02-27

申请号：US16493104

申请日：2018-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Kayo KUMAKURA ,  Yuka SATO ,  Satoru IDOJIRI ,  Hiroki ADACHI ,  Kenichi OKAZAKI

IPC: H01L51/56 ,  H01L51/00 ,  H01L51/52

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

公开(公告)号：US20190333942A1

公开(公告)日：2019-10-31

申请号：US16087811

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

IPC: H01L27/12 ,  H01L51/00 ,  H01L51/56 ,  B23K26/351

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US20180047609A1

公开(公告)日：2018-02-15

申请号：US15664367

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu OHNO ,  Seiji YASUMOTO ,  Naoki IKEZAWA ,  Satoru IDOJIRI ,  Shunpei YAMAZAKI

IPC: H01L21/683 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L21/48 ,  H01L27/12

CPC classification number: H01L21/6835 ,  G02F1/133553 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2201/123 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/481 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/0097 ,  H01L51/56 ,  H01L2221/68345 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2251/5338

Abstract: The yield of a manufacturing process of a display device is increased. The productivity of a display device is increased. A hydrogen-containing layer is formed over a substrate. Then, an oxygen-containing layer is formed over the hydrogen-containing layer. After that, a first layer is formed over the oxygen-containing layer with the use of a material containing a resin or a resin precursor. Subsequently, first heat treatment is performed on the first layer, so that a resin layer is formed. Next, a layer to be peeled is formed over the resin layer. The layer to be peeled and the substrate are separated from each other. The first heat treatment is performed in an oxygen-containing atmosphere.

公开(公告)号：US20170294463A1

公开(公告)日：2017-10-12

申请号：US15477528

申请日：2017-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masataka SATO ,  Masakatsu OHNO ,  Seiji YASUMOTO ,  Hiroki ADACHI

IPC: H01L27/12 ,  H01L21/683 ,  H01L29/786

CPC classification number: H01L21/7806 ,  H01L21/02172 ,  H01L21/02345 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/47 ,  H01L21/6835 ,  H01L21/84 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/7869 ,  H01L51/0097 ,  H01L2221/6835 ,  H01L2221/68386 ,  H01L2227/326

Abstract: A peeling method at low cost with high mass productivity is provided. An oxide layer is formed over a formation substrate, a first layer is formed over the oxide layer using a photosensitive material, an opening is formed in a portion of the first layer that overlaps with the oxide layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the oxide layer, the oxide layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.