SYSTEM AND METHOD FOR ACQUIRING USERS
    11.
    发明申请

    公开(公告)号:US20180018692A1

    公开(公告)日:2018-01-18

    申请号:US15641816

    申请日:2017-07-05

    CPC classification number: G06Q30/0239 G06Q30/0222 G06Q30/0225 G06Q30/0236

    Abstract: Provided are a system and method for acquiring users. In one example, the method includes providing a rebate offer with respect to a product, receiving, by an application server via the Internet, a request for payment of the rebate and proof of purchase of the product associated with the rebate via a mobile application executing on a mobile device, determining, by the application server, whether the mobile application executing on the mobile device corresponds to a new user of the mobile application, and in response to determining that the mobile application executing on the mobile device corresponds to a new user of the mobile application, authorizing payment of the rebate to a payment account previously registered through the mobile application executing on the mobile device.

    Electronic transcript generator
    12.
    发明申请
    Electronic transcript generator 审中-公开
    电子抄本生成器

    公开(公告)号:US20100228609A1

    公开(公告)日:2010-09-09

    申请号:US12380904

    申请日:2009-03-05

    Applicant: Steven Marcus

    Inventor: Steven Marcus

    Abstract: An electronic transcript generation and transfer system is described. It contains functionality for facilitating transactions between requestors and reporters by receiving a request for a transcript quote from a requestor and providing the request to a reporter. The system provides the reporter an interface to associate a number of pages with the request and based on various factors, generates a communication with the requestor containing the quote. The system then facilitates the requestor's payment for the transcript and provides the reporter a work request with specific details about the transcript request. Finally, upon receipt of the transcript sent notification from the reporter, the system transfers the requestor's payment to the reporter and transmits a communication to the requestor containing tracking information and other details of the completed transcript request.

    Abstract translation: 描述了电子转录生成和转移系统。 它包含通过从请求者接收到抄本报价的请求并向报告人提供请求来促进请求者和记者之间的交易的功能。 该系统为记者提供了一个界面,用于将多个页面与请求相关联,并根据各种因素,与包含报价的请求者生成通信。 该系统然后促进请求者支付抄本,并向记者提供关于转录请求的具体细节的工作请求。 最后,系统收到记者发来的通知后,系统将请求人的付款转交给记者,并向包含跟踪信息的请求者和完成的抄本请求的其他详细信息发送通信。

    PLASMA-ENHANCED DEPOSITION PROCESS FOR FORMING A METAL OXIDE THIN FILM AND RELATED STRUCTURES
    13.
    发明申请
    PLASMA-ENHANCED DEPOSITION PROCESS FOR FORMING A METAL OXIDE THIN FILM AND RELATED STRUCTURES 有权
    形成金属氧化物薄膜的等离子体增强沉积工艺及相关结构

    公开(公告)号:US20090269941A1

    公开(公告)日:2009-10-29

    申请号:US12109859

    申请日:2008-04-25

    Abstract: Methods of forming metal oxide thin films and related structures are provided. One embodiment of the methods includes conducting a plurality of cycles of deposition on a substrate. Each cycle includes supplying oxygen gas and an inert gas into a reaction space substantially continuously during the cycle. A metal precursor is supplied into the reaction space for a first duration. The metal precursor is a cyclopentadienyl compound of the metal. After the metal precursor is supplied, the continuously flowing oxygen gas is activated for a second duration to generate a plasma in the reaction space. The cycle is conducted at a temperature below about 400° C. The methods can be performed after forming a structure on the substrate, wherein the structure is formed of a material which is physically and/or chemically unstable at a high temperature.

    Abstract translation: 提供了形成金属氧化物薄膜和相关结构的方法。 所述方法的一个实施例包括在衬底上进行多个沉积循环。 每个循环包括在循环中基本连续地将氧气和惰性气体供入反应空间。 将金属前体供应到反应空间中持续一段时间。 金属前体是金属的环戊二烯基化合物。 在提供金属前体之后,连续流动的氧气在第二持续时间内被激活以在反应空间中产生等离子体。 该循环在低于约400℃的温度下进行。该方法可以在形成基底上的结构之后进行,其中该结构由在高温下物理和/或化学不稳定的材料形成。

    System and method of electronically verifying required proof-of-performance to secure promotional rewards

    公开(公告)号:US10402847B2

    公开(公告)日:2019-09-03

    申请号:US12950103

    申请日:2010-11-19

    Applicant: Steven Marcus

    Inventor: Steven Marcus

    Abstract: A proof-of-performance verification system may include a receipt processing facility that receives a receipt image, wherein the receipt processing facility optionally enhances the receipt, converts the receipt image to text, and matches the text to a product or service description in accordance with a terminology database, a proof processor that electronically matches a user-selected reward offer against the product or service description to facilitate offer redemption, and at least one of a payment facility that distributes the offer redemption funds and a rewards facility that communicates incentive rewards to a central location. Related user interfaces, applications, and computer program products are disclosed.

    Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
    15.
    发明授权
    Plasma-enhanced atomic layers deposition of conductive material over dielectric layers 有权
    导电材料在电介质层上的等离子体增强的原子层沉积

    公开(公告)号:US08557702B2

    公开(公告)日:2013-10-15

    申请号:US12683718

    申请日:2010-01-07

    Abstract: Methods of forming a conductive metal layer over a dielectric layer using plasma enhanced atomic layer deposition (PEALD) are provided, along with related compositions and structures. A plasma barrier layer is deposited over the dielectric layer by a non-plasma atomic layer deposition (ALD) process prior to depositing the conductive layer by PEALD. The plasma barrier layer reduces or prevents deleterious effects of the plasma reactant in the PEALD process on the dielectric layer and can enhance adhesion. The same metal reactant can be used in both the non-plasma ALD process and the PEALD process.

    Abstract translation: 提供了使用等离子体增强原子层沉积(PEALD)在电介质层上形成导电金属层的方法以及相关组合物和结构。 在通过PEALD沉积导电层之前,通过非等离子体原子层沉积(ALD)工艺在电介质层上沉积等离子体阻挡层。 等离子体阻挡层减少或防止PEALD工艺中的等离子体反应物对电介质层的有害影响,并且可以增强附着力。 同样的金属反应物可用于非等离子体ALD工艺和PEALD工艺。

    PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF CONDUCTIVE MATERIAL OVER DIELECTRIC LAYERS
    16.
    发明申请
    PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF CONDUCTIVE MATERIAL OVER DIELECTRIC LAYERS 有权
    导电材料的等离子体增强原子层沉积介质层

    公开(公告)号:US20100193955A1

    公开(公告)日:2010-08-05

    申请号:US12683718

    申请日:2010-01-07

    Abstract: Methods of forming a conductive metal layer over a dielectric layer using plasma enhanced atomic layer deposition (PEALD) are provided, along with related compositions and structures. A plasma barrier layer is deposited over the dielectric layer by a non-plasma atomic layer deposition (ALD) process prior to depositing the conductive layer by PEALD. The plasma barrier layer reduces or prevents deleterious effects of the plasma reactant in the PEALD process on the dielectric layer and can enhance adhesion. The same metal reactant can be used in both the non-plasma ALD process and the PEALD process.

    Abstract translation: 提供了使用等离子体增强原子层沉积(PEALD)在电介质层上形成导电金属层的方法以及相关组合物和结构。 在通过PEALD沉积导电层之前,通过非等离子体原子层沉积(ALD)工艺在电介质层上淀积等离子体阻挡层。 等离子体阻挡层减少或防止PEALD工艺中的等离子体反应物对电介质层的有害影响,并且可以增强附着力。 同样的金属反应物可用于非等离子体ALD工艺和PEALD工艺。

    Plasma-enhanced pulsed deposition of metal carbide films
    17.
    发明授权
    Plasma-enhanced pulsed deposition of metal carbide films 有权
    金属碳化物膜的等离子体增强脉冲沉积

    公开(公告)号:US07666474B2

    公开(公告)日:2010-02-23

    申请号:US12116894

    申请日:2008-05-07

    Abstract: Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.

    Abstract translation: 提供了形成金属碳化物膜的方法。 在一些实施例中,将衬底暴露于过渡金属物质和等离子体激发的氩的交替脉冲。 过渡金属物质与碳物质反应以沉积金属碳化物膜。 底物与过渡金属物质同时暴露于碳物质,或者基板在与过渡金属物质的脉冲暂时分离的脉冲中暴露于碳物质。 在一些实施方案中,碳物质和过渡金属物质形成相同前体化合物的一部分,例如金属有机化合物。

    Method of forming non-conformal layers
    18.
    发明授权
    Method of forming non-conformal layers 有权
    形成非保形层的方法

    公开(公告)号:US07608549B2

    公开(公告)日:2009-10-27

    申请号:US11375588

    申请日:2006-03-13

    Abstract: In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface.

    Abstract translation: 在一个方面,通过等离子体增强原子层沉积的变化形成非共形层,其中脉冲持续时间,分离,RF功率导通时间,反应物浓度,压力和电极间距中的一个或多个从真实的自饱和反应变化 以耗尽效应模式运行。 因此,沉积物靠近基底表面发生,但是在到达开口(例如,深的DRAM沟槽,孔隙等)中的特定距离之后被控制终止。 适用于这种调制的反应器配置包括喷头,原位等离子体反应器,特别是具有可调节的电极间距。 在另一方面,交替地和顺序地接触基底,包括开口的基底与至少两种不同的反应物接触,其中至少一种反应物的饱和剂量已被预先确定,并且不饱和剂量被均匀地提供在 衬底表面沉积小于完全覆盖开口表面的膜,导致在衬底表面上较不易接近的区域中的耗尽效应。

    PLASMA-ENHANCED DEPOSITION OF METAL CARBIDE FILMS
    19.
    发明申请
    PLASMA-ENHANCED DEPOSITION OF METAL CARBIDE FILMS 有权
    等离子体增强金属碳膜的沉积

    公开(公告)号:US20080113110A1

    公开(公告)日:2008-05-15

    申请号:US11873250

    申请日:2007-10-16

    CPC classification number: C23C16/32 C23C16/45527 C23C16/45542 C23C16/515

    Abstract: Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound and one or more plasma-excited species of a carbon-containing compound. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound and one or more plasma-excited species of a carbon-containing compound. The substrate is further exposed to a reducing agent. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms

    Abstract translation: 提供了形成金属碳化物膜的方法。 在一些实施例中,用于在原子层沉积(ALD)型工艺中形成金属碳化物膜的方法包括交替地和顺序地将反应空间中的衬底与金属化合物的气相脉冲和一种或多种等离子体激发的物质 含碳化合物。 在其他实施例中,在化学气相沉积(CVD)型方法中形成金属碳化物膜的方法包括使反应空间中的底物与金属化合物和一种或多种等离子体激发的含碳化合物同时接触。 将底物进一步暴露于还原剂。 还原剂除去杂质,包括卤素原子和/或氧原子

    System, method, and device for managing events

    公开(公告)号:US10733624B2

    公开(公告)日:2020-08-04

    申请号:US15643587

    申请日:2017-07-07

    Abstract: Provided are systems, devices, and methods for routing events. In one example, an application server includes a network interface to receive demographic information and a request from a mobile application executing on a mobile device, and a processor configured to identify an item that corresponds to the request, identify a web server that corresponds to the item, generate an event based on the request, and determine whether the event corresponds to the application server or the web server based on a combination of the item and the received demographic information. The processor may further process the event or control the network interface to transmit the event to the web server, based on determining whether the event corresponds to the application server or the web server.

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