Abstract:
Provided are a system and method for acquiring users. In one example, the method includes providing a rebate offer with respect to a product, receiving, by an application server via the Internet, a request for payment of the rebate and proof of purchase of the product associated with the rebate via a mobile application executing on a mobile device, determining, by the application server, whether the mobile application executing on the mobile device corresponds to a new user of the mobile application, and in response to determining that the mobile application executing on the mobile device corresponds to a new user of the mobile application, authorizing payment of the rebate to a payment account previously registered through the mobile application executing on the mobile device.
Abstract:
An electronic transcript generation and transfer system is described. It contains functionality for facilitating transactions between requestors and reporters by receiving a request for a transcript quote from a requestor and providing the request to a reporter. The system provides the reporter an interface to associate a number of pages with the request and based on various factors, generates a communication with the requestor containing the quote. The system then facilitates the requestor's payment for the transcript and provides the reporter a work request with specific details about the transcript request. Finally, upon receipt of the transcript sent notification from the reporter, the system transfers the requestor's payment to the reporter and transmits a communication to the requestor containing tracking information and other details of the completed transcript request.
Abstract:
Methods of forming metal oxide thin films and related structures are provided. One embodiment of the methods includes conducting a plurality of cycles of deposition on a substrate. Each cycle includes supplying oxygen gas and an inert gas into a reaction space substantially continuously during the cycle. A metal precursor is supplied into the reaction space for a first duration. The metal precursor is a cyclopentadienyl compound of the metal. After the metal precursor is supplied, the continuously flowing oxygen gas is activated for a second duration to generate a plasma in the reaction space. The cycle is conducted at a temperature below about 400° C. The methods can be performed after forming a structure on the substrate, wherein the structure is formed of a material which is physically and/or chemically unstable at a high temperature.
Abstract:
A proof-of-performance verification system may include a receipt processing facility that receives a receipt image, wherein the receipt processing facility optionally enhances the receipt, converts the receipt image to text, and matches the text to a product or service description in accordance with a terminology database, a proof processor that electronically matches a user-selected reward offer against the product or service description to facilitate offer redemption, and at least one of a payment facility that distributes the offer redemption funds and a rewards facility that communicates incentive rewards to a central location. Related user interfaces, applications, and computer program products are disclosed.
Abstract:
Methods of forming a conductive metal layer over a dielectric layer using plasma enhanced atomic layer deposition (PEALD) are provided, along with related compositions and structures. A plasma barrier layer is deposited over the dielectric layer by a non-plasma atomic layer deposition (ALD) process prior to depositing the conductive layer by PEALD. The plasma barrier layer reduces or prevents deleterious effects of the plasma reactant in the PEALD process on the dielectric layer and can enhance adhesion. The same metal reactant can be used in both the non-plasma ALD process and the PEALD process.
Abstract:
Methods of forming a conductive metal layer over a dielectric layer using plasma enhanced atomic layer deposition (PEALD) are provided, along with related compositions and structures. A plasma barrier layer is deposited over the dielectric layer by a non-plasma atomic layer deposition (ALD) process prior to depositing the conductive layer by PEALD. The plasma barrier layer reduces or prevents deleterious effects of the plasma reactant in the PEALD process on the dielectric layer and can enhance adhesion. The same metal reactant can be used in both the non-plasma ALD process and the PEALD process.
Abstract:
Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.
Abstract:
In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface.
Abstract:
Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound and one or more plasma-excited species of a carbon-containing compound. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound and one or more plasma-excited species of a carbon-containing compound. The substrate is further exposed to a reducing agent. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms
Abstract:
Provided are systems, devices, and methods for routing events. In one example, an application server includes a network interface to receive demographic information and a request from a mobile application executing on a mobile device, and a processor configured to identify an item that corresponds to the request, identify a web server that corresponds to the item, generate an event based on the request, and determine whether the event corresponds to the application server or the web server based on a combination of the item and the received demographic information. The processor may further process the event or control the network interface to transmit the event to the web server, based on determining whether the event corresponds to the application server or the web server.