公开(公告)号：US06340822B1

公开(公告)日：2002-01-22

申请号：US09426457

申请日：1999-10-05

申请人： Walter L. Brown ,  Sungho Jin ,  Wei Zhu

发明人： Walter L. Brown ,  Sungho Jin ,  Wei Zhu

IPC分类号： H01L2906

CPC分类号： H01L24/11 ,  B82Y10/00 ,  H01L21/76885 ,  H01L23/49811 ,  H01L23/53276 ,  H01L24/13 ,  H01L51/0595 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13193 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/351 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/848 ,  H01L2924/00

摘要： A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e.g., so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.

摘要翻译： 公开了一种电路装置，其包括至少两个电路层或电路装置，所述至少两个电路层或多个平行且基本上等长的纳米线在其间设置的垂直互连的电路装置。 纳米线可以包括复合材料，例如具有沿其长度存在的异质结，以提供各种器件应用。 还公开了一种用于制造电路装置的方法，包括在可溶解或可移除的衬底上生长多个纳米线，使纳米线的长度相等（例如，使得多个纳米线中的每个纳米线的长度基本上相等），转移和 将所述多个纳米线的暴露端接合到第一电路层; 并除去可溶解的基材。 附接到第一电路层的纳米线然后可以进一步结合到第二电路层以提供垂直互连的电路器件。

公开(公告)号：US06297063B1

公开(公告)日：2001-10-02

申请号：US09426453

申请日：1999-10-25

申请人： Walter L. Brown ,  Sungho Jin ,  Wei Zhu

发明人： Walter L. Brown ,  Sungho Jin ,  Wei Zhu

IPC分类号： H01L2100

CPC分类号： H01L24/16 ,  H01L23/49877 ,  H01L23/5385 ,  H01L24/11 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/13099 ,  H01L2224/8114 ,  H01L2224/9202 ,  H01L2225/06527 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/351 ,  Y10S438/962 ,  Y10S977/932 ,  H01L2924/00

摘要： A circuit device is disclosed comprising at least two circuit layers interconnected with a plurality of substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires in-situ on at least one circuit substrate and then interconnecting the nanowires to a mating substrate.

摘要翻译： 公开了一种电路装置，其包括与设置在它们之间的多个基本上等长的纳米线互连的至少两个电路层。 纳米线可以包括复合材料，例如具有沿其长度存在的异质结，以提供各种器件应用。 还公开了一种用于制造电路器件的方法，包括在至少一个电路衬底上原地生长多个纳米线，然后将纳米线互连到匹配衬底。

公开(公告)号：US5846122A

公开(公告)日：1998-12-08

申请号：US429259

申请日：1995-04-25

申请人： John Edwin Graebner ,  Sungho Jin ,  Guenther Wilhelm Kammlott ,  Wei Zhu

发明人： John Edwin Graebner ,  Sungho Jin ,  Guenther Wilhelm Kammlott ,  Wei Zhu

IPC分类号： B24B1/00 ,  B24B37/04 ,  B24B7/19 ,  B24B7/30

CPC分类号： B24B37/04 ,  B24B37/042

摘要： Applicants have discovered a new method for fine polishing surfaces of metal-soluble materials such as diamond to the submicron level. The method involves applying to the material surface a polishing medium composed of metal powder and an acidic or basic carrier. The surface is then polished by high speed rubbing to a submicron finish. Several embodiments of apparatus for performing the polishing are described.

摘要翻译： 申请人已经发现了将金属可溶性材料如金刚石的表面精细抛光到亚微米级的新方法。 该方法包括向材料表面施加由金属粉末和酸性或碱性载体构成的抛光介质。 然后通过高速摩擦将表面抛光到亚微米的表面。 描述了用于执行抛光的装置的几个实施例。

公开(公告)号：US5796211A

公开(公告)日：1998-08-18

申请号：US640592

申请日：1996-05-01

申请人： John Edwin Graebner ,  Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

发明人： John Edwin Graebner ,  Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J23/06 ,  H01J23/04

CPC分类号： H01J9/025 ,  H01J1/3042 ,  H01J23/06 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J61/0677 ,  H01J61/0737

摘要： In accordance with the invention, a microwave vacuum tube device, such as a traveling wave tube, is provided with an electron source comprising activated ultrafine diamonds. Applicants have discovered that ultrafine diamonds (5-1,000 nm diameter), when activated by heat treatment in a hydrogen plasma, become excellent room-temperature electron emitters capable of producing electron emission current density of at least 10 mA/cm.sup.2 at low electric fields of 10 V/micrometer. Sources using these diamonds provide electrons for microwave vacuum tubes at low voltage, low operating temperature and with fast turn-on characteristics. A multiple grid structure is described for providing high quality electron beams particularly useful for traveling wave tubes.

摘要翻译： 根据本发明，诸如行波管的微波真空管装置设置有包括活化的超细金刚石的电子源。 申请人已经发现，当在氢等离子体中通过热处理活化时，超细金刚石（直径5-1000nm）成为能够在低电场下产生至少10mA / cm 2的电子发射电流密度的优异的室温电子发射体 10 V /千分尺。 使用这些钻石的源在低电压，低工作温度和快速开启特性的微波真空管中提供电子。 描述了用于提供对于行波管特别有用的高质量电子束的多栅格结构。

公开(公告)号：US5780175A

公开(公告)日：1998-07-14

申请号：US595543

申请日：1996-02-02

申请人： Li-Han Chen ,  Sungho Jin ,  Wei Zhu ,  Robert Bruce van Dover

发明人： Li-Han Chen ,  Sungho Jin ,  Wei Zhu ,  Robert Bruce van Dover

IPC分类号： C22C38/00 ,  C22C38/26 ,  C22C38/28 ,  G11B5/127 ,  G11B5/187 ,  G11B5/31 ,  G11B5/39 ,  G11B5/667 ,  H01F10/08 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F10/32 ,  H01F17/00 ,  H01F41/30 ,  H01F10/10

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/1878 ,  G11B5/3109 ,  G11B5/3903 ,  G11B5/3906 ,  H01F10/002 ,  H01F10/08 ,  H01F10/13 ,  H01F10/138 ,  H01F10/147 ,  H01F10/3204 ,  H01F10/3254 ,  H01F17/0033 ,  H01F41/302 ,  Y10S428/90 ,  Y10T428/115

摘要： The invention is embodied in a soft magnetic thin film article comprising an iron-chromium-nitrogen (Fe--Cr--N) based alloy and methods for making such article. The soft magnetic thin film article is formed using an iron-chromium-nitrogen based alloy with tantalum in one embodiment and with at least one of the elements titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), molybdenum (Mo), niobium (Nb) or tungsten (W) in another embodiment. The article is formed such that the alloy has a relatively high saturation magnetization (e.g., greater than approximately 15 kG) and a relatively low coercivity (e.g., less than approximately 2.0 oersteds) in an as-deposited condition or, alternatively, with a very low temperature treatment (e.g., below approximately 150.degree. C). The inventive films are suitable for use in electromagnetic devices, for example, in microtransformer cores, inductor cores and in magnetic read-write heads.

摘要翻译： 本发明体现在包含铁 - 铬 - 氮（Fe-Cr-N）基合金的软磁薄膜制品和制造这种制品的方法中。 在一个实施方案中，使用具有钽的铁 - 铬 - 氮基合金与所述软磁性薄膜制品形成钛（Ti），锆（Zr），铪（Hf），钒（V）， 钼（Mo），铌（Nb）或钨（W）。 制品形成为使得合金在沉积条件下具有相对高的饱和磁化强度（例如，大于约15kG）和相对较低的矫顽力（例如，小于约2.0奥斯特），或者替代地， 低温处理（如低于约150℃）。 本发明的膜适用于电磁装置，例如在微型变压器芯，电感芯和磁读写头中。

公开(公告)号：US5746931A

公开(公告)日：1998-05-05

申请号：US760845

申请日：1996-12-05

申请人： John Edwin Graebner ,  Sungho Jin ,  Wei Zhu

发明人： John Edwin Graebner ,  Sungho Jin ,  Wei Zhu

IPC分类号： B24B37/04 ,  H01L21/00

CPC分类号： B24B37/04

摘要： This application describes a new method for rapid thinning, planarizing and fine polishing surfaces of diamond to the submicron/nanometer level so that large area, uniform thickness diamond wafers can be obtained. The method combines both chemical (dissolution of carbon in molten metals) and mechanical (rotating or moving sample fixtures in contact with the dissolving metals) polishing to achieve flat, smooth surface finishes in a relatively short period of time, thus improving the quality and economics of the overall polishing process. Several embodiments of apparatus for performing such chemical-mechanical polishing (CMP) of diamond are described.

摘要翻译： 该应用描述了一种用于将金刚石的表面快速稀释，平面化和精细抛光到亚微米/纳米级的新方法，从而可以获得大面积均匀厚度的金刚石晶片。 该方法结合了化学（溶解在金属中的碳）和机械（与溶解金属接触的旋转或移动的样品夹具）抛光，以在相对较短的时间内实现平坦，光滑的表面光洁度，从而提高了质量和经济性 的整体抛光过程。 描述了用于进行金刚石的这种化学机械抛光（CMP）的设备的几个实施例。

公开(公告)号：US5648699A

公开(公告)日：1997-07-15

申请号：US555594

申请日：1995-11-09

申请人： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

发明人： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC分类号： G09F9/313 ,  H01H9/02 ,  H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J1/30

CPC分类号： H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

摘要： The present invention provides improved methods for making field emission devices by which one can pre-deposit and bond the diamond particles or islands on a flexible metal foil at a desirably high temperature (e.g., near 900.degree. C. or higher), and then subsequently attach the high-quality- emitter-coated conductor foil onto the glass substrate. In addition to maximizing the field emitter properties, these methods provide high-speed, low-cost manufacturing. Since the field emitters can be pre-deposited on the metal foil in the form of long continuous sheet wound as a roll, the cathode assembly can be made by a high-speed, automated bonding process without having to subject each of the emitter-coated glass substrates to plasma heat treatment in a vacuum chamber.

摘要翻译： 本发明提供了用于制造场致发射器件的改进方法，通过该方法可以在理想的高温（例如接近900℃或更高）下预先沉积并将金刚石颗粒或岛结合在柔性金属箔上，然后随后 将高品质发射极涂覆的导体箔附着在玻璃基板上。 除了最大化场发射器性能之外，这些方法提供高速，低成本的制造。 由于场致发射体可以预先沉积在金属箔上，以卷绕成卷的长连续片的形式，阴极组件可以通过高速，自动化的接合工艺制成，而不必对每个发射器涂覆 玻璃基板在真空室中进行等离子体热处理。

公开(公告)号：US07268475B1

公开(公告)日：2007-09-11

申请号：US08771369

申请日：1996-12-16

申请人： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

发明人： Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC分类号： H01J1/88

CPC分类号： H01J9/242 ,  H01J29/864 ,  H01J31/123 ,  H01J2329/863 ,  H01J2329/8635 ,  H01J2329/864 ,  H01J2329/8645

摘要： In accordance with the invention, a field emission device is made by providing the device electrodes, forming a plurality of corrugated insulating rods with discontinuous coatings of conductive or semiconductive material with low secondary electron emission coefficient, adhering the rods to an electrode, cutting the rods to define corrugated pillars, and finishing the device. The result is low cost production of a field emission device having superior resistance to breakdown in high field operation.

摘要翻译： 根据本发明，通过提供器件电极，形成具有低二次电子发射系数的导电或半导体材料的不连续涂层的多个波纹绝缘棒，将棒粘附到电极上，切割棒 定义波纹柱，并整理设备。 结果是在高场操作中具有优异的耐击穿性的场致发射装置的低成本生产。

公开(公告)号：US20050054128A1

公开(公告)日：2005-03-10

申请号：US10967900

申请日：2004-10-18

申请人： Arman Gasparyan ,  Sungho Jin ,  Herbert Shea ,  Robert Van Dover ,  Wei Zhu

发明人： Arman Gasparyan ,  Sungho Jin ,  Herbert Shea ,  Robert Van Dover ,  Wei Zhu

IPC分类号： B81B3/00 ,  G02B6/32 ,  G02B6/35 ,  H01L21/00 ,  H01L31/0232

CPC分类号： G02B6/3518 ,  B81B3/0035 ,  B81B2201/042 ,  G02B6/32 ,  G02B6/3544 ,  G02B6/356 ,  G02B6/357 ,  G02B6/3584 ,  G02B6/3594

摘要： The present invention provides a micro-electro-mechanical system (MEMS) device, a method of manufacture therefore, and an optical communications system including the same. The device includes an electrode located over a substrate and a charge dissipation layer located proximate and electrically coupled to the substrate. The device may further include a moveable element located over the electrode.

摘要翻译： 本发明提供一种微电子机械系统（MEMS）装置，因此制造方法以及包括该微机电系统的光通信系统。 该器件包括位于衬底上方的电极和位于接近并电耦合到衬底的电荷耗散层。 该装置还可以包括位于电极上方的可移动元件。

公开(公告)号：US06538367B1

公开(公告)日：2003-03-25

申请号：US09369802

申请日：1999-08-06

申请人： Kyung Moon Choi ,  Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

发明人： Kyung Moon Choi ,  Sungho Jin ,  Gregory Peter Kochanski ,  Wei Zhu

IPC分类号： H01J102

CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J23/04 ,  H01J2201/30469 ,  H01J2225/38 ,  Y10S977/939

摘要： This invention is predicated on applicants' discovery that a highly oriented nanoconductor structure alone does not guarantee efficient field emission. To the contrary, the conventional densely populated, highly oriented structures actually yield relatively poor field emission characteristics. Applicants have determined that the individual nanoconductors in conventional assemblies are so closely spaced that they shield each other from effective field concentration at the ends, thus diminishing the driving force for efficient electron emission. In accordance with the invention, an improved field emitting nanoconductors assembly (a “low density nanoconductor assembly”) comprises an array of nanoconductors which are highly aligned but spaced from each other no closer than 10% of the height of the nanoconductors. In this way, the field strength at the ends will be at least 50% of the maximal field concentration possible. Several ways of making the optimally low density assemblies are described along with several devices employing the assemblies.

摘要翻译： 本发明基于申请人的发现，即单独的高度取向的纳米结构结构不能保证有效的场发射。 相反，传统的人口稠密，高度取向的结构实际上产生相对较差的场致发射特性。 申请人已经确定，常规组件中的单个纳米电感器如此紧密地间隔开，使得它们彼此屏蔽在端部处的有效场浓度，从而减少了有效电子发射的驱动力。根据本发明，改进的场发射纳米结构器件组件 “低密度纳米导体组件”）包括高度对准但彼此间隔不超过纳米电感器高度的10％的纳米电感器阵列。 以这种方式，末端的场强将是可能的最大场浓度的至少50％。 使用几种使用组件的装置来描述制造最佳低密度组件的几种方式。