摘要:
The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.
摘要:
Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system.
摘要:
The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.
摘要:
Systems and methods are provided for focusing a scanned ion beam in an ion implanter. A beam focusing system is provided, comprising first and second magnets providing corresponding magnetic fields that cooperatively provide a magnetic focusing field having a time-varying focusing field center generally corresponding to a time-varying beam position of a scanned ion beam along a scan direction. Methods are presented, comprising providing a focusing field having a focusing field center in the scan plane, and dynamically adjusting the focusing field such that the focusing field center is generally coincident with a time-varying beam position of the scanned ion beam along the scan direction.
摘要:
An ion shower comprises a plasma source operable to generate source gas ions within a chamber, and an extraction assembly associated with a top portion of the chamber. The extraction assembly is operable to extract ions from the top portion of the chamber. The ion shower further comprises a workpiece support structure associated with the top portion of the chamber that is operable to secure the workpiece having an implantation surface orientated facing downward toward the extraction assembly for implantation thereof. The ion shower of the present invention advantageously facilitates SIMOX processing with a high oxygen fraction, and uniform beam current for next generation processing.
摘要:
A method and apparatus for forming a sheet are disclosed. A melt is cooled and a sheet is formed on the melt. This sheet has a first thickness. The sheet is then thinned from the first thickness to a second thickness using, for example, a heater or the melt. The cooling may be configured to allow solutes to be trapped in a region of the sheet and this particular sheet may be thinned and the solutes removed. The melt may be, for example, silicon, silicon and germanium, gallium, or gallium nitride.
摘要:
A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.
摘要:
This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt.
摘要:
A sheet measurement apparatus has a sheet disposed in a melt. The measurement system uses a beam to determine a dimension of the sheet. This dimension may be, for example, height or width. The beam may be, for example, collimated light, a laser, x-rays, or gamma rays. The production of the sheet may be altered based on the measurements.
摘要:
A melt of a material is cooled and a sheet of the material is formed in the melt. This sheet is transported, cut into at least one segment, and cooled in a cooling chamber. The material may be Si, Si and Ge, Ga, or GaN. The cooling is configured to prevent stress or strain to the segment. In one instance, the cooling chamber has gas cooling.