Wafer scanning system with reciprocating rotary motion utilizing springs and counterweights
    11.
    发明授权
    Wafer scanning system with reciprocating rotary motion utilizing springs and counterweights 失效
    使用弹簧和配重的往复旋转运动的晶圆扫描系统

    公开(公告)号:US07267520B2

    公开(公告)日:2007-09-11

    申请号:US11099022

    申请日:2005-04-05

    IPC分类号: B66F9/00

    摘要: The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

    摘要翻译: 本发明涉及一种用于处理工件的扫描装置和方法,其中扫描装置包括彼此固定地连接的晶片臂和移动臂,其中晶片臂和移动臂可操作以围绕第一轴线旋转。 工件所在的端部执行器与晶片臂连接。 旋转轴将晶片臂和移动臂联接到第一致动器,其中第一致动器向轴提供旋转力。 动量平衡机构联接到轴上并且可操作地大体上使轴的旋转方向反转。 动量平衡机构包括一个或多个固定弹簧元件,其可操作以向耦合到移动臂的移动弹簧元件提供力。 控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

    Ion beam scanning control methods and systems for ion implantation uniformity
    12.
    发明授权
    Ion beam scanning control methods and systems for ion implantation uniformity 有权
    离子束扫描控制方法和离子注入系统的均匀性

    公开(公告)号:US07078707B1

    公开(公告)日:2006-07-18

    申请号:US11029052

    申请日:2005-01-04

    IPC分类号: G21K5/10 H01J37/08

    摘要: Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system.

    摘要翻译: 提供了用于在离子注入系统中校准离子束扫描器的方法,包括在沿着扫描方向的多个位置处测量多个初始电流密度值,其中所述值分别对应于多个初始电压扫描间隔中的一个,以及 相应的多个初始扫描时间值中的一个,基于测量的初始电流密度值和初始电压扫描间隔创建线性方程组,并且确定与线性系统的解的对应的一组扫描时间值 减小电流密度分布偏差的方程式。 提供校准系统用于在离子注入系统中校准离子束扫描器,包括剂量测定系统和控制系统。

    Gas-cooled clamp for RTP
    13.
    发明授权
    Gas-cooled clamp for RTP 失效
    用于RTP的气冷钳

    公开(公告)号:US07033443B2

    公开(公告)日:2006-04-25

    申请号:US10402809

    申请日:2003-03-28

    IPC分类号: H01L21/00 C23C16/00

    摘要: The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.

    摘要翻译: 本发明涉及半导体热处理装置和半导体基板的热冷却方法。 根据本发明的一个方面,公开了一种气冷夹和相关方法,其通常通过自由分子状态的热传导来提供衬底的冷却。 气冷夹具包括夹板,该夹板具有限定其间的间隙的多个突起,其中间隙的距离或深度与其中的冷却气体的平均自由路径相关联。 气冷夹具还包括压力控制系统,其可操作以控制多个间隙内的冷却气体的背侧压力,从而控制冷却气体的传热系数,其中冷却气体的传热系数主要为 压力的函数和基本上与间隙距离无关。

    Systems and methods for ion beam focusing
    14.
    发明授权
    Systems and methods for ion beam focusing 有权
    离子束聚焦的系统和方法

    公开(公告)号:US07019314B1

    公开(公告)日:2006-03-28

    申请号:US10967855

    申请日:2004-10-18

    CPC分类号: H01J37/3171 H01J37/147

    摘要: Systems and methods are provided for focusing a scanned ion beam in an ion implanter. A beam focusing system is provided, comprising first and second magnets providing corresponding magnetic fields that cooperatively provide a magnetic focusing field having a time-varying focusing field center generally corresponding to a time-varying beam position of a scanned ion beam along a scan direction. Methods are presented, comprising providing a focusing field having a focusing field center in the scan plane, and dynamically adjusting the focusing field such that the focusing field center is generally coincident with a time-varying beam position of the scanned ion beam along the scan direction.

    摘要翻译: 提供了将扫描离子束聚焦在离子注入机中的系统和方法。 提供了一种束聚焦系统,包括提供相应磁场的第一和第二磁体,其协作地提供磁聚焦场,其具有通常对应于扫描离子束沿扫描方向的时变束位置的时变聚焦场中心。 提出了方法,其包括提供在扫描平面中具有聚焦场中心的聚焦场,以及动态地调整聚焦场,使得聚焦场中心大体上与扫描离子束沿着扫描方向的时变束位置重合 。

    Floating sheet production apparatus and method
    18.
    发明授权
    Floating sheet production apparatus and method 有权
    浮板生产设备及方法

    公开(公告)号:US07855087B2

    公开(公告)日:2010-12-21

    申请号:US12403206

    申请日:2009-03-12

    IPC分类号: H01L21/00

    摘要: This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt.

    摘要翻译: 该片材生产设备包括限定被配置为保持熔体的通道的容器。 熔体构造成从通道的第一点流到第二点。 冷却板靠近熔体设置并且被配置成在熔体上形成片材。 溢流道设置在通道的第二点。 该溢流道构造成将片材与熔体分离。