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公开(公告)号：US09981841B2
公开(公告)日：2018-05-29
申请号：US15595711
申请日：2017-05-15
Inventor： Chia-Hua Chu , Chun-Wen Cheng
CPC classification number: B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81C1/00309 , B81C2203/0118
Abstract: A micro-electromechanical systems (MEMS) device includes a MEMS substrate having a first opening, a second opening, and a membrane layer comprising a first membrane disposed over the first opening and a second membrane disposed over the second opening. The MEMS device also includes a carrier substrate bonded to a first side of the MEMS substrate, the carrier substrate having a first cavity exposing the first membrane and a second cavity exposing the second membrane, and a cap substrate bonded to a second side of the MEMS substrate. The cap substrate has a third cavity connected to the first opening and a fourth cavity connected to the second opening. The first membrane, the first cavity, and the third cavity are part of a pressure sensor. The fourth cavity extends completely through the cap substrate. The second membrane, the second cavity, and the fourth cavity are part of a microphone.
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公开(公告)号：US09938138B2
公开(公告)日：2018-04-10
申请号：US15436943
申请日：2017-02-20
Inventor： Chun-Wen Cheng , Chia-Hua Chu
CPC classification number: B81C1/00158 , B81B7/008 , B81B2207/015 , B81B2207/096 , B81C1/00246 , B81C1/00333 , B81C1/00539 , B81C2201/0109 , B81C2201/0132 , B81C2203/0118 , B81C2203/0127 , B81C2203/0742 , B81C2203/0778 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/02247 , H01L21/02274 , H01L21/02337 , H01L21/0332 , H01L21/3081 , H01L21/31111 , H01L21/31144 , H01L21/76802
Abstract: An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity through a via formed into the membrane layer.
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公开(公告)号：US20180029881A1
公开(公告)日：2018-02-01
申请号：US15722214
申请日：2017-10-02
Inventor： Chun-Wen Cheng , Yi-Chuan Teng , Hung-Chia Tsai , Chia-Hua Chu
CPC classification number: B81C1/0023 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2207/096 , B81C1/00238 , B81C1/00301 , H01L21/76898 , H01L2224/11 , H01L2924/16235
Abstract: A vacuum sealed MEMS and CMOS package and a process for making the same may include a capping wafer having a surface with a plurality of first cavities, a first device having a first surface with a second plurality of second cavities, a hermetic seal between the first surface of the first device and the surface of the capping wafer, and a second device having a first surface bonded to a second surface of the first device. The second device is a CMOS device with conductive through vias connecting the first device to a second surface of the second device, and conductive bumps on the second surface of the second device. Conductive bumps connect to the conductive through vias and wherein a plurality of conductive bumps connect to the second device. The hermetic seal forms a plurality of micro chambers between the capping wafer and the first device.
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公开(公告)号：US09630831B1
公开(公告)日：2017-04-25
申请号：US14883908
申请日：2015-10-15
Inventor： Jung-Huei Peng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
CPC classification number: B81C1/00238 , B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81C1/00285 , B81C2201/0125 , B81C2201/0154 , B81C2201/019 , B81C2203/0118 , B81C2203/035 , B81C2203/0792
Abstract: The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer; and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
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公开(公告)号：US09573806B2
公开(公告)日：2017-02-21
申请号：US13925127
申请日：2013-06-24
Inventor： Chun-Wen Cheng , Chia-Hua Chu
IPC: H01L21/00 , B81C1/00 , B81B7/00 , H01L21/308
CPC classification number: B81C1/00158 , B81B7/008 , B81B2207/015 , B81B2207/096 , B81C1/00246 , B81C1/00333 , B81C1/00539 , B81C2201/0109 , B81C2201/0132 , B81C2203/0118 , B81C2203/0127 , B81C2203/0742 , B81C2203/0778 , H01L21/02175 , H01L21/02178 , H01L21/02186 , H01L21/02247 , H01L21/02274 , H01L21/02337 , H01L21/0332 , H01L21/3081 , H01L21/31111 , H01L21/31144 , H01L21/76802
Abstract: An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.
Abstract translation: 一种集成电路器件，包括设置在半导体衬底上的电介质层，介电层具有形成在其中的牺牲腔，形成在电介质层上的膜层，以及形成在膜层上的封盖结构，从而形成第二腔， 第二腔通过形成于膜层中的通孔连接到牺牲腔。
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Patent Agency Ranking
公开(公告)号：US09567209B1
公开(公告)日：2017-02-14
申请号：US14844486
申请日：2015-09-03
Inventor： Chun-Wen Cheng , Chia-Hua Chu , Fei-Lung Lai , Shiang-Chi Lin
CPC classification number: B81B7/007 , B81B2201/0214 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81B2207/07 , B81C1/0015 , B81C1/00158 , B81C1/00182 , B81C1/00301 , B81C2203/035 , B81C2203/0792 , G01L9/0041 , G01L9/0042 , G01L9/0044 , G01L9/0045 , G01L9/0048 , G01N27/123
Abstract: A semiconductor structure includes a first device and a second device. The first device includes a first substrate, a plurality of vias passing through the first substrate and filled with a conductive or semiconductive material and a first oxide layer surrounding the conductive or semiconductive material, a cavity surrounded by the first substrate, a metallic material disposed over the first surface, a second oxide layer disposed over the second surface, a membrane disposed over the second oxide layer and the cavity, a heater disposed within the membrane, a sensing electrode disposed over the membrane and the heater, and a sensing material disposed over the cavity and contacting with the sensing electrode. The second device includes a second substrate, and a bonding structure disposed over the second substrate. The metallic material is bonded with the bonding structure to integrate the first device with the second device.
Abstract translation: 半导体结构包括第一器件和第二器件。 所述第一器件包括第一衬底，穿过所述第一衬底并填充有导电或半导体材料的多个通孔和围绕所述导电或半导体材料的第一氧化物层，由所述第一衬底包围的空腔，设置在所述第一衬底上的金属材料 第一表面，设置在第二表面上的第二氧化物层，设置在第二氧化物层和空腔上的膜，设置在膜内的加热器，设置在膜和加热器上方的感测电极，以及设置在膜上的感测材料 空腔并与感测电极接触。 第二装置包括第二基板和设置在第二基板上的接合结构。 金属材料与接合结构结合以将第一器件与第二器件集成。
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17.发明申请MEMS Pressure Sensor and Microphone Devices Having Through-Vias and Methods of Forming Same 审中-公开具有通孔和形成方法的MEMS压力传感器和麦克风设备相同公开(公告)号：US20170001859A1
公开(公告)日：2017-01-05
申请号：US15265434
申请日：2016-09-14
Inventor： Chun-Wen Cheng , Chia-Hua Chu
CPC classification number: B81B7/007 , B81B2201/0257 , B81B2201/0264 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/0792
Abstract: A method embodiment includes providing a MEMS wafer. A portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer. The carrier wafer is etched to expose the first membrane and a first surface of the second membrane to an ambient environment. A MEMS structure is formed in the MEMS wafer. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device. The cap wafer comprises an interconnect structure. A through-via electrically connected to the interconnect structure is formed in the cap wafer.
Abstract translation: 方法实施例包括提供MEMS晶片。 图案化MEMS晶片的一部分以提供用于麦克风装置的第一膜和用于压力传感器装置的第二膜。 载体晶片接合到MEMS晶片。 蚀刻载体晶片以将第一膜和第二膜的第一表面暴露于周围环境。 在MEMS晶片中形成MEMS结构。 帽晶片结合到与承载晶片相对的MEMS晶片的一侧，以形成包括MEMS结构的第一密封空腔和包括用于压力传感器装置的第二膜的第二表面的第二密封空腔。 盖晶片包括互连结构。 在盖晶片中形成电连接到互连结构的通孔。
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18.发明授权MEMS pressure sensor and microphone devices having through-vias and methods of forming same 有权具有通孔的MEMS压力传感器和麦克风装置及其形成方法公开(公告)号：US09469527B2
公开(公告)日：2016-10-18
申请号：US13955957
申请日：2013-07-31
Inventor： Chun-Wen Cheng , Chia-Hua Chu
CPC classification number: B81B7/007 , B81B2201/0257 , B81B2201/0264 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/0792
Abstract: A method embodiment includes providing a MEMS wafer. A portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer. The carrier wafer is etched to expose the first membrane and a first surface of the second membrane to an ambient environment. A MEMS structure is formed in the MEMS wafer. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device. The cap wafer comprises an interconnect structure. A through-via electrically connected to the interconnect structure is formed in the cap wafer.
Abstract translation: 方法实施例包括提供MEMS晶片。 图案化MEMS晶片的一部分以提供用于麦克风装置的第一膜和用于压力传感器装置的第二膜。 载体晶片结合到MEMS晶片。 蚀刻载体晶片以将第一膜和第二膜的第一表面暴露于周围环境。 在MEMS晶片中形成MEMS结构。 帽晶片结合到与承载晶片相对的MEMS晶片的一侧，以形成包括MEMS结构的第一密封空腔和包括用于压力传感器装置的第二膜的第二表面的第二密封空腔。 盖晶片包括互连结构。 在盖晶片中形成电连接到互连结构的通孔。
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公开(公告)号：US20160159644A1
公开(公告)日：2016-06-09
申请号：US15043850
申请日：2016-02-15
Inventor： Chia-Hua Chu , Chun-Wen Cheng
CPC classification number: B81C1/00293 , B81B3/0021 , B81B7/0041 , B81B7/007 , B81B7/02 , B81B7/04 , B81B2201/0235 , B81B2201/0242 , B81B2201/025 , B81B2201/0264 , B81C1/00134 , B81C1/00309 , B81C2201/013 , B81C2203/0118 , G01C19/56 , G01C19/5769 , G01L9/0044 , G01L19/0076 , G01L19/0092 , G01P15/00 , G01P15/0802 , G01P15/125
Abstract: A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.
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20.发明申请MEMS Integrated Pressure Sensor and Microphone Devices and Methods of Forming Same 审中-公开MEMS集成压力传感器和麦克风设备及其形成方法公开(公告)号：US20160060104A1
公开(公告)日：2016-03-03
申请号：US14934854
申请日：2015-11-06
Inventor： Chia-Hua Chu , Chun-Wen Cheng
IPC: B81B7/02
CPC classification number: B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81C1/00309 , B81C2203/0118
Abstract: A method embodiment for forming a micro-electromechanical (MEMS) device includes providing a MEMS wafer, wherein a portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer, and the carrier wafer is etched to expose the first membrane for the microphone device to an ambient environment. A MEMS substrate is patterned and portions of a first sacrificial layer are removed of the MEMS wafer to form a MEMS structure. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure. A second sealed cavity and a cavity exposed to an ambient environment on opposing sides of the second membrane for the pressure sensor device are formed.
Abstract translation: 用于形成微机电（MEMS）装置的方法实施例包括提供MEMS晶片，其中MEMS晶片的一部分被图案化以提供用于麦克风装置的第一膜和用于压力传感器装置的第二膜。 载体晶片结合到MEMS晶片，并且载体晶片被蚀刻以将用于麦克风器件的第一膜暴露于周围环境。 图案化MEMS基板，并且去除MEMS晶片的第一牺牲层的部分以形成MEMS结构。 盖晶片结合到与晶片相对的MEMS晶片的一侧，以形成包括MEMS结构的第一密封腔。 形成用于压力传感器装置的第二密封空腔和暴露于第二隔膜相对侧周围环境的空腔。
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