公开(公告)号：US20140265723A1

公开(公告)日：2014-09-18

申请号：US13827126

申请日：2013-03-14

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Yoshitomo TANAKA ,  Hitoshi SAKUMA ,  Katsuyuki KURACHI ,  Kazuhiko MAEJIMA

IPC: H01L41/187 ,  B41J2/045 ,  G01L1/16

CPC classification number: H01L41/1873 ,  B41J2/045 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0805 ,  H01L41/0973

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Sr (strontium) is substituted on both of an A site and a B site and Mn (manganese) is substituted only on the A site. Accordingly, the piezoelectric element is provided to decrease a leak current of the piezoelectric element using the thin film of potassium sodium niobate, to increase a withstand voltage thereof and to improve piezoelectric characteristics thereof.

Abstract translation: 压电元件作为压电体层包含作为由通式ABO3表示的钙钛矿化合物的铌酸钾钠的薄膜，其中Sr（锶）在A位置和B位都被取代，Mn（ 锰）仅在A位置上被取代。 因此，提供了使用铌酸钾钠薄膜来降低压电元件的泄漏电流的压电元件，以提高其耐压并提高其压电特性。

公开(公告)号：US20210304929A1

公开(公告)日：2021-09-30

申请号：US17202424

申请日：2021-03-16

Applicant: TDK Corporation

Inventor： Masashi MIWA ,  Yoshitomo TANAKA ,  Koji MIURA ,  Taeko TSUBOKURA

IPC: H01F1/057 ,  C22C38/00 ,  C22C38/16 ,  C22C38/10 ,  C22C38/06 ,  C22C38/14

Abstract: Provided is a permanent magnet including a rare-earth element R (such as Nd), a transition metal element T (such as Fe), B, Zr, and Cu. The permanent magnet contains a plurality of main phase grains including Nd, T, and B, and grain boundary multiple junctions, the one grain boundary multiple junction is a grain boundary surrounded by three or more of the main phase grains, one of the grain boundary multiple junctions contains a ZrB2 crystal and an R—Cu-rich phase including R and Cu, Fe is contained in the ZrB2 crystal, a total concentration of Nd and Pr in the one grain boundary multiple junction containing both the ZrB2 crystal and the R—Cu-rich phase is higher than a total concentration of Nd and Pr in the main phase grain, a concentration of Cu in the one grain boundary multiple junction containing both the ZrB2 crystal and the R—Cu-rich phase is higher than a concentration of Cu in the main phase grain, and a unit of the concentration of each of Nd, Pr, and Cu is atomic %.

公开(公告)号：US20190036016A1

公开(公告)日：2019-01-31

申请号：US16142112

申请日：2018-09-26

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA ,  Yoshitomo TANAKA

IPC: H01L43/08 ,  H01L45/00 ,  H01L43/12 ,  H01L43/10 ,  G11B5/39 ,  H01L27/22 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11B5/39 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L45/147

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US20180301284A1

公开(公告)日：2018-10-18

申请号：US15938616

申请日：2018-03-28

Applicant: TDK CORPORATION

Inventor： Takeshi SHIBAHARA ,  Yuki NAGAMINE ,  Yoshitomo TANAKA ,  Kumiko YAMAZAKI

IPC: H01G4/33 ,  H01L49/02 ,  H01G4/08 ,  C01B21/082

CPC classification number: H01G4/33 ,  C01B21/0821 ,  C01P2002/60 ,  C01P2002/78 ,  C01P2006/40 ,  C04B35/495 ,  C04B35/58007 ,  C04B35/6262 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/77 ,  C04B2235/781 ,  C04B2235/787 ,  H01G4/085 ,  H01G4/1218 ,  H01G4/1272 ,  H01G4/306 ,  H01L28/55

Abstract: The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property.A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein said “A” is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said “B” is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.

公开(公告)号：US20150109372A1

公开(公告)日：2015-04-23

申请号：US14058912

申请日：2013-10-21

Applicant: TDK CORPORATION

Inventor： Yasuhiro AIDA ,  Ryu OHTA ,  Yoshitomo TANAKA ,  Hiroshi CHIHARA ,  Hitoshi SAKUMA ,  Kazuhiko MAEJIMA

IPC: H01L41/08 ,  G01L1/16 ,  B41J2/045 ,  H01L41/187

CPC classification number: H01L41/0805 ,  B41J2/045 ,  B41J2/14233 ,  B41J2202/03 ,  G01L1/16 ,  G01L9/008 ,  H01L41/0973 ,  H01L41/1873 ,  H01L41/316

Abstract: The displacement as an actuator or the sensitivity as a sensor of a piezoelectric element can be increased and, in addition, the electric power consumption can be reduced by providing a thin film of potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO3, as a piezoelectric layer, wherein a crystal orientation of a crystal structure of potassium-sodium niobate has in-plane fourfold symmetry as a whole piezoelectric layer, where a first axis of rotational symmetry is a thickness direction of the piezoelectric layer.

Abstract translation: 可以增加作为致动器的位移或作为压电元件的传感器的灵敏度，并且另外可以通过提供作为钙钛矿型化合物的铌酸钾钠的薄膜来降低电力消耗， 通式ABO3作为压电层，其中铌酸钾钠的晶体结构的晶体取向作为整体压电层的面内四重对称，其中旋转对称的第一轴是压电层的厚度方向。

公开(公告)号：US20140084754A1

公开(公告)日：2014-03-27

申请号：US13624572

申请日：2012-09-21

Applicant: TDK CORPORATION

Inventor： Kazuhiko MAEJIMA ,  Katsuyuki KURACHI ,  Hitoshi SAKUMA ,  Yasuhiro AIDA ,  Yoshitomo TANAKA

IPC: H01L41/04 ,  H01L41/187

CPC classification number: H01L41/04 ,  H01L41/0805 ,  H01L41/1873 ,  H01L41/316

Abstract: A thin film piezoelectric device according to the present invention includes a potassium sodium niobate-based piezoelectric thin film having an average crystal grain diameter of 60 nm or more and 90 nm or less, and a pair of electrode films configured to hold the piezoelectric thin film therebetween.

Abstract translation: 根据本发明的薄膜压电装置包括平均晶粒直径为60nm以上且90nm以下的磷酸铌酸钾系压电薄膜，以及配置成保持压电薄膜的一对电极薄膜 之间。