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    Substrate Processing System, Gate Valve and Substrate Transfer Method
    12.
    发明申请
    Substrate Processing System, Gate Valve and Substrate Transfer Method 审中-公开
    基板加工系统，闸阀和基板转移方法

    公开(公告)号：US20150371812A1

    公开(公告)日：2015-12-24

    申请号：US14735216

    申请日：2015-06-10

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kouji MAEDA ,  Naoyuki SUZUKI ,  Tetsuya MIYASHITA ,  Masamichi HARA

    IPC: H01J37/18 ,  H01J37/32

    CPC classification number: H01J37/185 ,  H01J37/32513 ,  H01J37/32733 ,  H01J37/32899 ,  H01L21/67126 ,  H01L21/67184 ,  H01L21/67748

    Abstract: There is provided a substrate processing system which includes: at least two transfer chambers disposed adjacent each other, each of which including a transfer mechanism configured to transfer a substrate; at least one process chamber connected to each of the at least two transfer chambers, and configured to perform a process on the substrate loaded into the at least one process chamber; a gate valve configured to move into and out of a connection path interconnecting the at least two transfer chambers and configured to separate the at least two transfer chambers from each other; and a substrate holding mechanism attached to the gate valve and configured to hold the substrate.

    Abstract translation: 提供了一种基板处理系统，其包括：彼此相邻布置的至少两个传送室，每个传送室包括被配置为传送基板的传送机构; 至少一个处理室，连接到所述至少两个传送室中的每一个，并且被配置成在装载到所述至少一个处理室中的所述衬底上执行处理; 闸阀构造成移动进入和离开连接所述至少两个传送室的连接路径并且被配置为将所述至少两个传送室彼此分离; 以及基板保持机构，其附接到所述闸阀并构造成保持所述基板。

    FILM FORMING APPARATUS AND FILM FORMING METHOD
    14.
    发明申请
    FILM FORMING APPARATUS AND FILM FORMING METHOD 有权

    公开(公告)号：US20220178014A1

    公开(公告)日：2022-06-09

    申请号：US17631188

    申请日：2020-07-02

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Koji MAEDA ,  Atsushi SHIMADA ,  Katsushi OIKAWA ,  Tetsuya MIYASHITA

    IPC: C23C14/35 ,  C23C14/54 ,  C23C14/52 ,  C23C14/34 ,  H01J37/34

    Abstract: A film forming apparatus includes a processing container, a substrate holder configured to hold a substrate inside the processing container, a cathode unit disposed above the substrate holder, and a gas introducing mechanism configured to introduce a plasma generating gas into the processing container. The cathode unit includes a target, a power supply configured to supply electric power to the target, a magnet provided on a rear side of the target, and a magnet driving part configured to drive the magnet. The magnet driving part includes an oscillation driver configured to oscillate the magnet along the target, and a perpendicular driver configured to drive the magnet in a direction perpendicular to a main surface of the target independently of driving performed by the oscillation driver. Sputtered particles are deposited on the substrate by magnetron sputtering.

    FILM-FORMING DEVICE
    15.
    发明申请
    FILM-FORMING DEVICE 审中-公开

    公开(公告)号：US20200071815A1

    公开(公告)日：2020-03-05

    申请号：US16346705

    申请日：2017-10-23

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Hiroyuki TOSHIMA ,  Tatsuo HATANO ,  Tetsuya MIYASHITA ,  Shinji FURUKAWA ,  Junichi TAKEI

    IPC: C23C14/56 ,  C23C14/34 ,  C23C14/50 ,  C23C14/04

    Abstract: A film-forming device according to one embodiment includes a chamber body, a support, a moving device, a shielding member, a first holder and a second holder, in the film-forming device, a substrate supported by the support is linearly moved. The shielding member is disposed above an area where the substrate is moved, and includes a slit extending in a direction perpendicular to a movement direction of the substrate. The first holder and the second holder hold a first target and a second target, respectively, above the shielding member. The first target and the second target are arranged symmetrically with respect to a vertical plane including a linear path on which the center of the substrate is moved.

    LOAD LOCK DEVICE
    16.
    发明申请
    LOAD LOCK DEVICE 有权
    负载锁定装置

    公开(公告)号：US20140124069A1

    公开(公告)日：2014-05-08

    申请号：US14070121

    申请日：2013-11-01

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Masamichi HARA ,  Tetsuya MIYASHITA

    IPC: F16K51/02

    CPC classification number: F16K51/02 ,  H01L21/67201 ,  Y10T137/86083

    Abstract: Provided is a load lock device which includes: a container with an opening formed therein and configured to be selectively maintained at an atmospheric environment and a vacuum atmosphere; a holding unit arranged within the container and configured to hold objects to be processed; an elevation mechanism configured to vertically move the holding unit; and a pressure regulating mechanism configured to vacuum-evacuate the container through the opening of the container. The elevation mechanism includes at least two vertically-extended elevation shaft members connected to the holding unit; and a drive unit configured to vertically move the elevation shaft members. The elevation shaft members are arranged opposite each other with the opening interposed therebetween.

    Abstract translation: 本发明提供一种装载锁定装置，其特征在于，包括：具有形成在其内的开口的容器，其构造成选择性地保持在大气环境和真空气氛中; 保持单元，其布置在所述容器内并且构造成保持要处理的物体; 升降机构，其构造成使所述保持单元垂直移动; 以及压力调节机构，其构造成通过容器的开口对容器进行真空抽真空。 升降机构包括连接到保持单元的至少两个垂直延伸的仰角轴构件; 以及构造成垂直移动仰角轴构件的驱动单元。 升降轴构件彼此相对地布置，并且其间插入开口。

    SUBSTRATE PROCESSING APPARATUS AND ABNORMALITY DETECTION METHOD
    18.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND ABNORMALITY DETECTION METHOD 有权

    公开(公告)号：US20220285197A1

    公开(公告)日：2022-09-08

    申请号：US17652545

    申请日：2022-02-25

    Applicant: Tokyo Electron Limited

    Inventor： Hiroaki CHIHAYA ,  Yasuhiko KOJIMA ,  Einstein Noel ABARRA ,  Tetsuya MIYASHITA

    IPC: H01L21/683

    Abstract: A substrate processing apparatus includes: a stage including an electrostatic chuck configured to attract a substrate; a heater configured to heat the stage; a heating drive part configured to supply power to the heater so that a temperature of the stage becomes a target value; and a detector configured to detect an abnormality in attraction of the substrate by the electrostatic chuck, wherein the detector is further configured to detect the abnormality based on fluctuation of the power supplied to the heater, the fluctuation being generated by the attraction of the substrate by the electrostatic chuck.

    APPARATUS FOR PERFORMING SPUTTERING PROCESS AND METHOD THEREOF
    20.
    发明申请
    APPARATUS FOR PERFORMING SPUTTERING PROCESS AND METHOD THEREOF 有权

    公开(公告)号：US20220270866A1

    公开(公告)日：2022-08-25

    申请号：US17676411

    申请日：2022-02-21

    Applicant: Tokyo Electron Limited

    Inventor： Tetsuya MIYASHITA ,  Naoki WATANABE

    IPC: H01J37/34 ,  H01J37/32 ,  C23C14/35

    Abstract: An apparatus for performing a sputtering process on a substrate includes: a processing container configured to accommodate a plurality of substrates; a plurality of stages provided inside the processing container to respectively place the plurality of substrates thereon and disposed to be arranged along a circle surrounding a preset center position; and a target disposed at a position above the stages to cause target particles to be emitted by plasma formed inside the processing container such that the target particles adhere to the substrates respectively placed on the stages, wherein the stages are arranged such that an emission region in which the target particles are emitted from the target and overlapping regions in which the substrates respectively placed on the stages overlap are arranged at positions that are rotationally symmetrical around the preset center position when viewed in a plan view from above the target.

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