公开(公告)号：US5987989A

公开(公告)日：1999-11-23

申请号：US795402

申请日：1997-02-05

申请人： Toshimasa Yamamoto ,  Kenichi Ao ,  Yukihiro Takeuchi

发明人： Toshimasa Yamamoto ,  Kenichi Ao ,  Yukihiro Takeuchi

IPC分类号： G01P15/125 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/13 ,  H01L29/84

CPC分类号： B81B7/0006 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/131 ,  B81B2201/0235 ,  G01P2015/0814

摘要： A semiconductor physical quantity sensor includes a substrate and a beam structure having movable electrodes and spacing a given distance from an upper surface of the substrate. First fixed electrodes and second fixed electrodes are fixedly provided on the upper surface of the substrate. Each first fixed electrode faces one side of the corresponding movable electrode, while each second fixed electrode faces the other side of the corresponding movable electrode. A laminated structure of a lower layer insulating film, conductive films and an upper layer insulating film is arranged at an upper portion of the substrate. The conductive layers form a first wiring pattern for the first fixed electrodes, a second wiring pattern for the second fixed electrodes and a lower electrode. The first wiring pattern is electrically connected to the first fixed electrodes via openings formed in the upper layer insulating film and anchors of the first fixed electrodes, respectively. The second wiring pattern is electrically connected to the second fixed electrodes via openings formed in the upper layer insulating film and anchors of the second fixed electrodes, respectively. The lower electrode is electrically connected to the beam structure via an opening formed in the upper layer insulating film and an anchor of the beam structure.

摘要翻译： 半导体物理量传感器包括基板和具有可移动电极并且与基板的上表面间隔给定距离的光束结构。 第一固定电极和第二固定电极固定地设置在基板的上表面上。 每个第一固定电极面对相应的可动电极的一侧，而每个第二固定电极面对相应的可移动电极的另一侧。 下层绝缘膜，导电膜和上层绝缘膜的层叠结构设置在基板的上部。 导电层形成用于第一固定电极的第一布线图案，第二固定电极的第二布线图案和下电极。 第一布线图案分别经由形成在上层绝缘膜中的开口和第一固定电极的锚固件电连接到第一固定电极。 第二布线图案分别经由形成在上层绝缘膜中的开口和第二固定电极的锚固件电连接到第二固定电极。 下电极通过形成在上层绝缘膜中的开口和梁结构的锚固件而电连接到梁结构。

公开(公告)号：US07201053B2

公开(公告)日：2007-04-10

申请号：US10834183

申请日：2004-04-29

申请人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

发明人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

IPC分类号： G01P15/125 ,  G01P9/04

CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

摘要翻译： 电容式物理量传感器检测物理量。 传感器包括可移动部分，其包括可动电极和包括固定电极的固定部分。 固定电极包括面向可动电极的检测面的检测面。 可移动电极可以根据物理量朝向固定电极移动，使得检测表面之间的距离是可变的。 可移动和固定电极中的至少一个包括凹槽。 凹槽设置在可移动和固定电极中的一个的顶部或底部上，具有从顶部或底部的预定深度，并且从检测表面延伸到相对的表面。

公开(公告)号：US6137150A

公开(公告)日：2000-10-24

申请号：US540833

申请日：1995-10-11

申请人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Tadashi Hattori

发明人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Tadashi Hattori

IPC分类号： G01L1/14 ,  B81B3/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  G01P15/12 ,  G01P15/125 ,  G01P15/13 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01P15/131 ,  G01C19/5719 ,  G01P15/097 ,  G01P15/124 ,  G01P2015/0814

摘要： The present invention provides a semiconductor physical-quantity sensor which can perform measurement of high accuracy without occurrence of deformation or displacement of a fixed electrode for vibration use even if voltage applied to the fixed electrode for vibration use is changed, and which can increase a dielectric breakdown voltage between the fixed electrode for vibration use and a substrate without varying a thickness of an insulative sacrificial layer or causing sacrificial-layer etching time to be affected. A semiconductor physical-quantity sensor according to the present invention forms an electrode-anchor portion on a sufficiently thick insulation film and causes dielectric breakdown voltage with a semiconductor substrate to be increased. In particular, the sufficiently thick insulation film is given by a LOCOS oxide film formed during sensor detection-circuit fabrication or separation of a diffusion electrode.

摘要翻译： 本发明提供一种半导体物理量传感器，即使施加到用于振动的固定电极的电压发生变化，也可以进行高精度的测量，而不会发生用于振动的固定电极的变形或位移，并且可以增加电介质 在不改变绝缘牺牲层的厚度的情况下，用于振动使用的固定电极和基板之间的击穿电压或者影响牺牲层蚀刻时间。 根据本发明的半导体物理量传感器在足够厚的绝缘膜上形成电极锚固部分，并且使得与半导体衬底的介电击穿电压增加。 特别地，足够厚的绝缘膜由传感器检测电路制造或扩散电极分离期间形成的LOCOS氧化物膜给出。

公开(公告)号：US5572057A

公开(公告)日：1996-11-05

申请号：US360940

申请日：1994-12-21

申请人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

发明人： Toshimasa Yamamoto ,  Yukihiro Takeuchi ,  Yoshinori Ohtsuka ,  Kazuhiko Kano

IPC分类号： G01P15/08 ,  G01P15/125 ,  H01L29/82

CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  Y10S73/01

摘要： Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.

摘要翻译： 通过新的结构避免了由于半导体衬底和可移动电极之间的静电力引起的不利影响。 光束结构的可移动电极以指定的间隔设置在p型硅衬底上方。 每个由杂质扩散层构成的固定电极设置在p型硅衬底上的可移动电极的两侧; 这些固定电极相对于可动电极自对准。 可移动电极伴随着加速度的作用而移动，并且通过由该位移产生的固定电极之间的电流的变化（波动）来检测加速度。 另外，可动电极向上移动用的电极设置在可动电极的上方，在可动电极向上移动用的电极之间施加电位差，并且可移动电极对硅衬底的吸引力为 缓解

公开(公告)号：US5504356A

公开(公告)日：1996-04-02

申请号：US152505

申请日：1993-11-16

申请人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Yoshinori Ohtsuka ,  Shigeyuki Akita ,  Tadashi Hattori ,  Kazuhiko Kanou ,  Hirotane Ikeda

发明人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Yoshinori Ohtsuka ,  Shigeyuki Akita ,  Tadashi Hattori ,  Kazuhiko Kanou ,  Hirotane Ikeda

IPC分类号： G01P15/08 ,  G01P15/12 ,  H01L29/78 ,  H01L29/84

CPC分类号： G01P15/124 ,  G01P15/0802

摘要： This invention aims at providing a novel semiconductor accelerometer comprising a smaller number of substrates and a production method thereof.An insulating film is formed on a main plane of a P-type silicon substrate, and a beam-like movable electrode is formed on the insulating film. Fixed electrodes are then formed on both sides of the movable electrode in self-alignment with the movable electrode by diffusing an impurity into the P-type silicon substrate, and the insulating film below the movable electrode is etched and removed. There is thus produced a semiconductor accelerometer comprising the P-type silicon substrate 1, the movable electrode 4 having the beam structure and disposed above the P-type silicon substrate 1 with a predetermined gap between them, and the fixed electrodes 8, 9 consisting of the impurity diffusion layer and formed on both sides of the movable electrode 4 on the P-type silicon substrate 1 in self-alignment with the movable electrode 4. This sensor can detect acceleration from the change (increase/decrease) of a current between the fixed electrodes 8 and 9 resulting from the displacement of the movable electrode 4 due to acceleration.

摘要翻译： 本发明的目的在于提供一种新型的半导体加速度计，其包括较少数量的基板及其制造方法。 在P型硅基板的主平面上形成绝缘膜，在绝缘膜上形成有束状的可动电极。 然后通过将杂质扩散到P型硅衬底中，在可动电极的两侧与可动电极自对准地形成固定电极，蚀刻除去可动电极下面的绝缘膜。 因此，制造了包括P型硅衬底1，具有光束结构的可动电极4并且在它们之间具有预定间隙并且设置在P型硅衬底1上方的固定电极8,9的半导体加速度计， 该杂质扩散层形成在与可动电极4自对准的P型硅衬底1上的可动电极4的两侧。该传感器可以从电流的变化（增加/减少） 固定电极8和9由于加速而由可动电极4的位移而产生。

公开(公告)号：US06276207B1

公开(公告)日：2001-08-21

申请号：US09438293

申请日：1999-11-12

申请人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

发明人： Minekazu Sakai ,  Yukihiro Takeuchi ,  Inao Toyoda ,  Seiichiro Ishio ,  Toshimasa Yamamoto ,  Eishi Kawasaki ,  Minoru Murata ,  Hiroshi Muto

IPC分类号： G01P1500

CPC分类号： B81C1/00928 ,  B81B3/0008 ,  B81B3/001 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.

摘要翻译： 一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。 加速度传感器具有传感器部分和处理部分。 传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。 处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。 传感器部分通过沟槽与处理部分电绝缘。

公开(公告)号：US5500549A

公开(公告)日：1996-03-19

申请号：US357258

申请日：1994-12-13

申请人： Yukihiro Takeuchi ,  Kozo Shibata ,  Yoshinori Ohtsuka ,  Kazuhiko Kano ,  Toshimasa Yamamoto

发明人： Yukihiro Takeuchi ,  Kozo Shibata ,  Yoshinori Ohtsuka ,  Kazuhiko Kano ,  Toshimasa Yamamoto

IPC分类号： G01P15/08 ,  B81B3/00 ,  B81C1/00 ,  G01C19/56 ,  G01C19/5755 ,  G01C19/5769 ,  G01P15/14 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01C19/5719 ,  G01P2015/0814 ,  Y10S73/01

摘要： A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.

摘要翻译： 半导体偏航率传感器，其可以通过IC制造工艺容易地构造，使得通过晶体管结构获得由于电流值引起的横摆率检测信号，并且公开了其制造方法。 由光束支撑的重量从半导体衬底的表面以规定的间隔设置，并且可动电极和激励电极与该重量一体地形成。 用于激发使用的固定电极对应于激发电极固定到基板。 与此同时，源电极和漏电极通过在与可动电极相对的位置的基板的表面上的扩散层形成，使得漏极电流随着可可电极的位移而变化 由于偏航率，并且由该电流检测到横摆率。

公开(公告)号：US20070251915A1

公开(公告)日：2007-11-01

申请号：US11783434

申请日：2007-04-10

申请人： Junji Oohara ,  Hisaya Katoh ,  Toshiyuki Morishita ,  Yukihiro Takeuchi

发明人： Junji Oohara ,  Hisaya Katoh ,  Toshiyuki Morishita ,  Yukihiro Takeuchi

IPC分类号： B29D11/00

CPC分类号： G02B3/06 ,  G02B6/124 ,  G03F7/0005

摘要： A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.

摘要翻译： 一种制造光学器件的方法包括：第一步骤，形成光学器件形成体，该光学器件形成体包括通过沟槽在衬底表面上沿排列方向布置的多个柱状结构，以及轮廓结构，其连接到并包含多个 的柱状结构; 从光学装置形成体开始氧化到柱状结构被氧化的状态的氧化光学元件形成体的第二工序; 以及第三步骤，其中第二步骤中的轮廓结构的未氧化残余部分在第二步骤之后被氧化以形成氧化体。 此外，第三步骤包括在第三步骤中限制轮廓结构相对于至少柱状结构的排列方向变形。

公开(公告)号：US20050054153A1

公开(公告)日：2005-03-10

申请号：US10936539

申请日：2004-09-09

申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

IPC分类号： B81C1/00 ,  H01L21/306 ,  H01L29/80 ,  H05K3/06

CPC分类号： B81C1/00619 ,  B81C2201/0112

摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

公开(公告)号：US5619050A

公开(公告)日：1997-04-08

申请号：US399345

申请日：1995-03-06

申请人： Hirofumi Uenoyama ,  Kenichi Ao ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Yukihiro Takeuchi

发明人： Hirofumi Uenoyama ,  Kenichi Ao ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Yukihiro Takeuchi

IPC分类号： G01P15/125 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01P15/0802 ,  G01P15/12 ,  Y10S73/01

摘要： A semiconductor acceleration sensor capable of reducing a leakage current and manufacturing method thereof is disclosed. A beam structure is disposed on a silicon substrate. The beam structure has a movable section, and the movable section is disposed spaced at a prescribed distance above silicon substrate. A movable electrode section is formed in one portion of movable section. Fixed electrodes made of an impurity diffusion layer are formed in silicon substrate to correspond to both sides of a movable electrode section. A peripheral circuit is formed in silicon substrate. The beam structure and the peripheral circuit are electrically connected by an electroconductive thin film, made of polysilicon. Then, when a voltage is applied to the beam structure, and a voltage is applied to both fixed electrodes, an inversion layer is formed, and an electrical current flows between the fixed electrodes. In the case where an acceleration is received and movable section is displaced, the electrical current flowing between the fixed electrodes changes.

摘要翻译： 公开了能够减小漏电流的半导体加速度传感器及其制造方法。 梁结构设置在硅衬底上。 梁结构具有可移动部分，并且可移动部分设置在硅基板上方规定距离处。 可动电极部分形成在可动部分的一部分中。 在硅衬底中形成由杂质扩散层制成的固定电极，以对应于可动电极部分的两侧。 在硅衬底中形成外围电路。 光束结构和外围电路通过由多晶硅制成的导电薄膜电连接。 然后，当向梁结构施加电压并且向两个固定电极施加电压时，形成反型层，并且电流在固定电极之间流动。 在接收到加速度并且可移动部分移位的情况下，在固定电极之间流动的电流改变。