公开(公告)号：US06355560B1

公开(公告)日：2002-03-12

申请号：US09209434

申请日：1998-12-10

申请人： Roderick Craig Mosely ,  Hong Zhang ,  Fusen Chen ,  Ted Guo

发明人： Roderick Craig Mosely ,  Hong Zhang ,  Fusen Chen ,  Ted Guo

IPC分类号： H01L214763

CPC分类号： H01L21/76876 ,  C23C14/568 ,  C23C16/54 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76879

摘要： The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD metal layer is substantially void-free. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without the formation of an oxide layer over the CVD Al layer.

摘要翻译： 本发明一般涉及在衬底上提供均匀的台阶覆盖和金属层的平坦化以在半微米应用中形成连续的无空隙接触或通孔的改进方法。 在本发明的一个方面中，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。 然后在低温下将CVD金属层沉积到耐火层上，以提供用于PVD金属的保形润湿层。 接下来，在低于金属的熔点温度的温度下，将PVD金属沉积在预先形成的CVD金属层上。 所得到的CVD / PVD金属层基本上无空隙。 金属化处理优选在包括PVD和CVD处理室的一体化处理系统中进行，使得一旦将衬底引入真空环境中，就会发生通孔和触点的金属化，而不会在其上形成氧化物层 CVD Al层。

公开(公告)号：US20060057843A1

公开(公告)日：2006-03-16

申请号：US11264517

申请日：2005-11-01

申请人： Fusen Chen ,  Ling Chen ,  Walter Glenn ,  Praburam Gopalraja ,  Jianming Fu

发明人： Fusen Chen ,  Ling Chen ,  Walter Glenn ,  Praburam Gopalraja ,  Jianming Fu

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76844 ,  C23C14/022 ,  C23C14/046 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76873

摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

公开(公告)号：US06991709B2

公开(公告)日：2006-01-31

申请号：US10934231

申请日：2004-09-03

申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok K. Sinha

发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok K. Sinha

IPC分类号： C23C14/34

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/225 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

摘要翻译： 在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。 目标具有面向待溅射涂覆的晶片的环形保险库。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的 铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。 前两个步骤也可以与阻隔金属一起使用。

公开(公告)号：US06974771B2

公开(公告)日：2005-12-13

申请号：US10894774

申请日：2004-07-20

申请人： Fusen Chen ,  Ling Chen ,  Walter Benjamin Glenn ,  Praburam Gopalraja ,  Jianming Fu

发明人： Fusen Chen ,  Ling Chen ,  Walter Benjamin Glenn ,  Praburam Gopalraja ,  Jianming Fu

IPC分类号： C23C14/02 ,  C23C14/04 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/44 ,  H01L21/768 ,  C23C16/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/4763

CPC分类号： H01L21/76844 ,  C23C14/022 ,  C23C14/046 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76873

摘要： In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

摘要翻译： 在第一方面，提供了一种方法，其包括（1）在原子层沉积（ALD）室内使用原子层沉积在通孔的侧壁和底部上形成第一阻挡层; （2）通过溅射蚀刻从所述通孔的底部去除所述第一阻挡层的至少一部分; 和（3）在ALD室内的通孔的侧壁和底部上沉积第二阻挡层。 提供了许多其它实施例，以及根据这些和其它方面的系统，方法和计算机程序产品。

公开(公告)号：US06884329B2

公开(公告)日：2005-04-26

申请号：US10340564

申请日：2003-01-10

申请人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

发明人： Wei D. Wang ,  Anantha K. Subramani ,  Jianming Fu ,  Praburam Gopalraja ,  Jick M. Yu ,  Fusen Chen

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/54 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/345 ,  C23C14/541 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76877

摘要： A method of filling copper into a high-aspect ratio via by a plasma sputter process and allowing the elimination of electrochemical plating. In one aspect of the invention, the sputtering is divided into a first step performed at a low temperature of no more than 100° C. and with at least portions of high wafer bias, thereby filling a lower half of the hole, and a second step performed at a higher temperature, e.g., at least 200° C. and with at least portions of low wafer bias to complete the hole filling. In another aspect of the invention, diffusion promoting gas such as hydrogen is added to the copper sputter plasma. In still another aspect, copper sputtering, even in the final fill phase, is performed through multiple cycles of low-level and high-level pedestal bias to deposit copper on exposed corners and to sputter from the corners.

摘要翻译： 一种通过等离子体溅射工艺将铜填充到高纵横比通孔并允许消除电化学电镀的方法。 在本发明的一个方面，溅射被分为在不超过100℃的低温下进行的第一步骤和至少部分高晶片偏压，从而填充孔的下半部分，并且第二步骤 步骤在较高的温度例如至少200℃进行，并且至少部分低晶片偏置以完成孔填充。 在本发明的另一方面，将扩散促进气体如氢气加入到铜溅射等离子体中。 在另一方面，即使在最终填充阶段，铜溅射也是通过多个低级和高级底座偏压循环进行的，以便在暴露的拐角上沉积铜并从拐角溅射。

公开(公告)号：US20050051424A1

公开(公告)日：2005-03-10

申请号：US10939832

申请日：2004-09-13

申请人： Jianming Fu ,  Praburam Gopalraja ,  Fusen Chen ,  John Forster

发明人： Jianming Fu ,  Praburam Gopalraja ,  Fusen Chen ,  John Forster

IPC分类号： C23C14/35 ,  H01J37/34 ,  C23C14/32

CPC分类号： H01J37/3455 ,  H01J37/3408

摘要： A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.

摘要翻译： 溅射工艺和磁控管对于低压等离子体溅射或持续自溅射特别有利，其中磁控管具有减小的面积但是完全的目标覆盖。 磁控管包括围绕内极面的外极面，其间具有间隙。 本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边，并具有基本上更大的总磁场强度。 由此，可以实现低压高离子化分级的溅射。

公开(公告)号：US20050006222A1

公开(公告)日：2005-01-13

申请号：US10495506

申请日：2002-11-14

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel Lubben ,  Suraj Rengarajan ,  Michael Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John Forster ,  Jianming Fu ,  Roderick Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  H01L21/285 ,  H01L21/4763 ,  H01L21/768 ,  C23C14/00 ,  C23C14/32 ,  C25B9/00

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

摘要翻译： 公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。 在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。 优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转 所述室使用旋转装置（446,448,450）。 辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。 氩（426）通过阀（428）供应。 目标（416）被供电（434）。

公开(公告)号：US06514390B1

公开(公告)日：2003-02-04

申请号：US08733620

申请日：1996-10-17

申请人： Zheng Xu ,  Fusen Chen ,  Jaim Nulman

发明人： Zheng Xu ,  Fusen Chen ,  Jaim Nulman

IPC分类号： C23C1435

CPC分类号： H01J37/321 ,  H01J37/3405

摘要： A magnetic shield to reduce sputtering of an RF coil for a plasma chamber in a semiconductor fabrication system is provided. The magnetic shield also reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.

摘要翻译： 提供了用于减少半导体制造系统中的等离子体室的RF线圈的溅射的磁屏蔽。 磁屏蔽还减少了材料在线圈上的沉积，这又导致线圈在工件上散落的颗粒物质的减少。

公开(公告)号：US06238803B1

公开(公告)日：2001-05-29

申请号：US09501566

申请日：2000-02-09

申请人： Jianming Fu ,  Zheng Xu ,  Fusen Chen

发明人： Jianming Fu ,  Zheng Xu ,  Fusen Chen

IPC分类号： C23C1406

CPC分类号： H01L21/76856 ,  C23C14/0641 ,  H01L21/2855 ,  H01L21/76843

摘要： Improved titanium nitride barrier layers are formed by depositing a first titanium layer; treating this layer with an oxygen plasma to form an oxygen-containing titanium layer thereover; depositing a titanium nitride layer over the oxygen-containing titanium layer; and treating the titanium nitride layer with an oxygen-containing plasma. Robust titanium nitride barrier layers are formed that can prevent spiking by an overlying aluminum contact layer even after heat treatment up to 550° C.

摘要翻译： 通过沉积第一钛层形成改进的氮化钛阻挡层; 用氧等离子体处理该层以在其上形成含氧钛层; 在含氧钛层上沉积氮化钛层; 并用含氧等离子体处理氮化钛层。 形成了坚固的氮化钛阻挡层，即使在高达550℃的热处理之后也可以防止由上覆的铝接触层引起的尖峰。

公开(公告)号：US5851344A

公开(公告)日：1998-12-22

申请号：US717525

申请日：1996-09-24

申请人： Zheng Xu ,  Fusen Chen

发明人： Zheng Xu ,  Fusen Chen

IPC分类号： C23C14/00 ,  H01L21/203 ,  H01L21/28 ,  H01L21/768 ,  H01L21/463

CPC分类号： H01L21/76882

摘要： A method of eliminating or substantially eliminating voids formed in the bottom of high aspect ratio holes following the physical vapor deposition of a material over the surface of a substrate. The method includes placing the substrate in an ultrasonic processing chamber filled with a fluid and having an ultrasonic source. The ultrasonic source is used to generate ultrasonic waves at a frequency no higher than is sufficient to cause a flow of the material adjacent the voids into these voids, without significantly affecting the deposited material elsewhere on the substrate.

摘要翻译： 在材料表面上物理气相沉积之后，消除或基本消除在高纵横比孔的底部形成的空隙。 该方法包括将衬底放置在填充有流体并具有超声波源的超声处理室中。 超声波源用于产生超过足以导致邻近空隙的材料流入这些空隙中的频率的超声波，而不会显着影响衬底上其它地方的沉积材料。