公开(公告)号：US11615971B2

公开(公告)日：2023-03-28

申请号：US16712405

申请日：2019-12-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Teruaki Konishi ,  Kouzou Kanagawa ,  Osamu Kuroda ,  Koji Tanaka ,  Kotaro Tsurusaki ,  Hidemasa Aratake ,  Kouji Ogura ,  Keita Hirase

IPC: H01L21/67 ,  H01L21/311

Abstract: There is provided a substrate processing apparatus including: a processing part configured to process a substrate with a processing liquid; and a processing liquid generation part configured to generate the processing liquid supplied to the processing part. The processing liquid generation part includes: a reservoir configured to store the processing liquid; a circulation line through which the processing liquid stored in the reservoir is circulated; a heater configured to heat the processing liquid; and a nozzle provided at a downstream side of the circulation line and has at least one ejection port formed to eject the processing liquid heated by the heater from above a liquid level of the processing liquid stored in the reservoir.

公开(公告)号：US20180286718A1

公开(公告)日：2018-10-04

申请号：US15940036

申请日：2018-03-29

Applicant: Tokyo Electron Limited

Inventor： Teruaki Konishi ,  Kazusige Sano ,  Koji Tanaka

IPC: H01L21/67 ,  G01N5/00

Abstract: A processing liquid used in a substrate liquid processing apparatus can be supplied in a constant amount with high accuracy. A substrate liquid processing apparatus A1 includes a storage line 61 configured to store a processing liquid therein; an introduction line 62 configured to introduce the processing liquid into the storage line 61; a discharge line 63 configured to discharge the processing liquid from the storage line 61; and a gas supply unit 65 configured to perform a strickling of the processing liquid by jetting a gas to a surface of the processing liquid stored in the storage line 61.

公开(公告)号：US09862007B2

公开(公告)日：2018-01-09

申请号：US14666896

申请日：2015-03-24

Applicant: Tokyo Electron Limited

Inventor： Daisuke Saiki ,  Shogo Mizota ,  Takashi Yabuta ,  Jun Nonaka ,  Tatsuya Nagamatsu ,  Koji Tanaka ,  Tomiyasu Maezono

IPC: B08B3/14 ,  C11D11/00 ,  H01L21/67 ,  B24B57/02 ,  B01D36/04 ,  B01D37/04

CPC classification number: B08B3/14 ,  B01D36/04 ,  B01D37/04 ,  B24B57/02 ,  C11D11/0047 ,  H01L21/67017

Abstract: Disclosed are a substrate liquid processing apparatus and method for performing a liquid processing on a substrate using a processing liquid, and a computer-readable recording medium with a substrate liquid processing program recorded therein. In the method, a first chemical liquid supply step is performed to supply a first chemical liquid from a first chemical liquid supply unit to a processing liquid storage unit, a first chemical liquid purifying step is performed to purify the first chemical liquid in a chemical liquid purifying unit, a second chemical liquid supply step is performed to supply a second chemical liquid from a second chemical liquid supply unit to the processing liquid storage unit, and a processing liquid supply step is performed to supply the processing liquid obtained by mixing the first and second chemical liquids from the processing liquid supply unit to substrate liquid processing units.

公开(公告)号：US20170236729A1

公开(公告)日：2017-08-17

申请号：US15432044

申请日：2017-02-14

Applicant: Tokyo Electron Limited

Inventor： Yosuke Kawabuchi ,  Kouzou Tachibana ,  Mitsunori Nakamori ,  Kotaro Ooishi ,  Keisuke Egashira ,  Koji Tanaka ,  Hiroaki Inadomi ,  Masami Yamashita ,  Yoshiteru Fukuda ,  Koji Yamashita ,  Yu Tsurifune ,  Takuro Masuzumi

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/04 ,  B08B3/10 ,  B08B3/14 ,  H01L21/02 ,  B08B3/08

CPC classification number: H01L21/67051 ,  H01L21/02057 ,  H01L21/67028

Abstract: Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

公开(公告)号：US12042815B2

公开(公告)日：2024-07-23

申请号：US17489045

申请日：2021-09-29

Applicant: Tokyo Electron Limited

Inventor： Kotaro Tsurusaki ,  Koji Yamashita ,  Yusuke Yamamoto ,  Koji Tanaka ,  Kouzou Kanagawa

IPC: B05C3/109 ,  B05C3/02 ,  B05C11/00 ,  B05C11/10 ,  B05D1/20 ,  C25D21/04 ,  H01L21/67 ,  B05C3/00

CPC classification number: B05C3/109 ,  B05C3/02 ,  B05C11/00 ,  B05C11/1013 ,  B05D1/20 ,  C25D21/04 ,  H01L21/67017 ,  H01L21/67057 ,  B05C3/00

Abstract: A substrate processing apparatus includes a processing tank, a holder, an organic solvent supply, a drainage port, a gas supply, and an exhaust port. The processing tank stores an aqueous layer. The holder holds a substrate. The organic solvent supply supplies an organic solvent onto the aqueous layer to form a liquid layer of the organic solvent. The drainage port discharges the aqueous layer from a bottom wall of the processing tank and causes the liquid layer of the organic solvent to descend from above the substrate to below the substrate. The gas supply supplies a gas of a water repellent agent to the liquid layer from above the processing tank while the liquid layer descends. The exhaust port is exposed on a side wall of the processing tank by the descending of the liquid layer and discharges the gas of the water repellent gas.

公开(公告)号：US11152234B2

公开(公告)日：2021-10-19

申请号：US15940036

申请日：2018-03-29

Applicant: Tokyo Electron Limited

Inventor： Teruaki Konishi ,  Kazusige Sano ,  Koji Tanaka

IPC: H01L21/67 ,  G01N5/00 ,  G01F11/00 ,  H01L21/677 ,  G01G5/00 ,  G01F11/28

Abstract: A processing liquid used in a substrate liquid processing apparatus can be supplied in a constant amount with high accuracy. A substrate liquid processing apparatus A1 includes a storage line 61 configured to store a processing liquid therein; an introduction line 62 configured to introduce the processing liquid into the storage line 61; a discharge line 63 configured to discharge the processing liquid from the storage line 61; and a gas supply unit 65 configured to perform a strickling of the processing liquid by jetting a gas to a surface of the processing liquid stored in the storage line 61.

公开(公告)号：US10067514B2

公开(公告)日：2018-09-04

申请号：US14543951

申请日：2014-11-18

Applicant: Tokyo Electron Limited

Inventor： Yasuo Kiyohara ,  Ikuo Sunaka ,  Koji Tanaka ,  Takami Satoh ,  Kazuyoshi Mizumoto ,  Takashi Uno ,  Hirotaka Maruyama ,  Hidetomo Uemukai ,  Tomiyasu Maezono

IPC: B01F15/04 ,  B01F15/02 ,  B01F3/08 ,  G05D11/13

Abstract: A substrate processing apparatus includes a mixing tank, a first opening/closing valve, a second opening/closing valve, a first flow rate measuring unit, a second flow rate measuring unit, a control unit, and a substrate processing unit. A first liquid and a second liquid are mixed such that the second liquid is mixed in an amount more than that of the first liquid. The first and second opening/closing valves open/close a first flow path and a second flow path, respectively. The first and second flow rate measuring units measure flow rates of the first and second liquids flowing through the first and second flow paths, respectively. The control unit controls opening/closing of the first opening/closing valve and the second opening/closing valve. The substrate processing unit processes a substrate by supplying a mixed liquid of the first and second liquids to the substrate.

公开(公告)号：US09716020B2

公开(公告)日：2017-07-25

申请号：US14510160

申请日：2014-10-09

Applicant: Tokyo Electron Limited

Inventor： Yasuhiro Takaki ,  Koji Tanaka ,  Shun Tominaga

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/67017

Abstract: Disclosed is a substrate liquid processing apparatus including: a first processing liquid supply mechanism provided with a first tank in which a processing liquid is stored and a first nozzle through which the processing liquid stored in the first tank is ejected, and configured to supply the processing liquid to a first surface of a substrate by the first nozzle; a second processing liquid supply mechanism provided with a second tank in which a processing liquid having the same composition as the processed liquid stored in the first tank is stored and a second nozzle through which the processed liquid stored in the second tank is ejected, and configured to supply the processed liquid to a second surface of the substrate by the second nozzle; a processing unit configured to perform processing on the substrate using the processed liquids supplied by the first nozzle and the second nozzle; and a recovery line configured to recover the processed liquids which are supplied to the substrate from the first nozzle and the second nozzle and mixed with each other from the processing unit and return the recovered processed liquids to the second tank.

公开(公告)号：US20150107622A1

公开(公告)日：2015-04-23

申请号：US14510160

申请日：2014-10-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiro Takaki ,  Koji Tanaka ,  Shun Tominaga

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/67017

Abstract: Disclosed is a substrate liquid processing apparatus including: a first processing liquid supply mechanism provided with a first tank in which a processing liquid is stored and a first nozzle through which the processing liquid stored in the first tank is ejected, and configured to supply the processing liquid to a first surface of a substrate by the first nozzle; a second processing liquid supply mechanism provided with a second tank in which a processing liquid having the same composition as the processed liquid stored in the first tank is stored and a second nozzle through which the processed liquid stored in the second tank is ejected, and configured to supply the processed liquid to a second surface of the substrate by the second nozzle; a processing unit configured to perform processing on the substrate using the processed liquids supplied by the first nozzle and the second nozzle; and a recovery line configured to recover the processed liquids which are supplied to the substrate from the first nozzle and the second nozzle and mixed with each other from the processing unit and return the recovered processed liquids to the second tank.

Abstract translation: 公开了一种基板液体处理装置，包括：第一处理液体供给机构，设置有第一储存器，其中存储有处理液体;第一喷嘴，其中存储在第一储存箱中的处理液体通过该第一喷嘴被提供， 液体通过第一喷嘴到基板的第一表面; 第二处理液供给机构，其具备：第二罐，其中存储有与储存在第一罐中的处理液相同组成的处理液;第二喷嘴，存储在第二罐中的处理液通过该第二喷嘴排出; 通过第二喷嘴将经处理的液体供应到基板的第二表面; 处理单元，被配置为使用由所述第一喷嘴和所述第二喷嘴供应的处理液体对所述基板进行处理; 以及回收管线，被配置为从所述第一喷嘴和所述第二喷嘴提供给所述基板的处理液体，并且从所述处理单元彼此混合并将所回收的处理液体返回到所述第二罐。