公开(公告)号：US10676820B2

公开(公告)日：2020-06-09

申请号：US16186921

申请日：2018-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro Okada ,  Yutaka Motoyama

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/24 ,  C23C16/28

Abstract: There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.

公开(公告)号：US10460950B2

公开(公告)日：2019-10-29

申请号：US15310840

申请日：2015-06-03

Applicant: Tokyo Electron Limited

Inventor： Akinobu Kakimoto ,  Yoshinobu Hayakawa ,  Satoshi Mizunaga ,  Yasuhiro Hamada ,  Mitsuhiro Okada

IPC: H01L21/3065 ,  H01L21/308 ,  H01J37/32 ,  H01L21/311

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon. The film forming apparatus is provided separately from the etching apparatus, the etching apparatus performing, a first etching step in which the film including silicon is partway etched by using plasma; and a second etching step in which the film including silicon, on which the film including carbon is formed, is further etched by using plasma, the film forming apparatus performing a film forming step in which the film including carbon is formed, without generating plasma, on the film including silicon on which the first etching step has been performed.

公开(公告)号：US20190287828A1

公开(公告)日：2019-09-19

申请号：US16297858

申请日：2019-03-11

Applicant: Tokyo Electron Limited

Inventor： Koji Yoshii ,  Tatsuya Yamaguchi ,  Hiroyuki Hayashi ,  Mitsuhiro Okada ,  Satoshi Takagi ,  Toshihiko Takahashi ,  Masafumi Shoji ,  Kazuya Kitamura

IPC: H01L21/67 ,  H01L21/673

Abstract: Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

公开(公告)号：US09984875B2

公开(公告)日：2018-05-29

申请号：US15436991

申请日：2017-02-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya Takahashi ,  Mitsuhiro Okada ,  Katsuhiko Komori

IPC: H01L21/00 ,  C23C16/24 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/02647 ,  C23C16/045 ,  C23C16/24 ,  C23C16/455 ,  C23C16/52 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636

Abstract: A method of forming a silicon film, a germanium film or a silicon germanium film on a target substrate having a fine recess formed on a surface of the target substrate by a chemical vapor deposition method includes placing the target substrate having the fine recess in a processing container, and supplying a film forming gas containing an element constituting a film to be formed and a chlorine-containing compound gas into the processing container. Adsorption of the film forming gas at an upper portion of the fine recess is selectively inhibited by the chlorine-containing compound gas.

公开(公告)号：US09758865B2

公开(公告)日：2017-09-12

申请号：US14447060

申请日：2014-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide Hasebe ,  Kazuya Takahashi ,  Katsuhiko Komori ,  Yoshikazu Furusawa ,  Mitsuhiro Okada ,  Hiroyuki Hayashi ,  Akinobu Kakimoto

IPC: C23C16/00 ,  C23C16/04 ,  C23C16/24 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC classification number: C23C16/045 ,  C23C16/24 ,  H01L21/28556 ,  H01L21/32055 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.

公开(公告)号：US09613838B2

公开(公告)日：2017-04-04

申请号：US14221334

申请日：2014-03-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro Okada ,  Kazuhide Hasebe

IPC: C23C16/458 ,  C23C16/54 ,  H01L21/67 ,  H01L21/673 ,  H01L21/677

CPC classification number: H01L21/6719 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67303 ,  H01L21/67757

Abstract: A batch-type vertical substrate processing apparatus includes a processing chamber into which a substrate holder configured to stack and hold a plurality of target substrates in a height direction is inserted; and a plurality of flanges formed to protrude from an inner wall of the processing chamber toward an internal space of the processing chamber along a planar direction and configured to divide the interior of the processing chamber into a plurality of processing subspaces along the height direction, wherein the flanges include insertion holes through which the substrate holder is inserted, and diameters of the insertion holes are small at an upper side of the processing chamber and become gradually larger toward a lower side of the processing chamber.

公开(公告)号：US09540743B2

公开(公告)日：2017-01-10

申请号：US14566069

申请日：2014-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya Takahashi ,  Yoshikazu Furusawa ,  Mitsuhiro Okada ,  Hiromasa Yonekura

IPC: H01L21/00 ,  H01L21/322 ,  C30B5/00 ,  C30B1/02 ,  C30B29/54 ,  C30B29/06

CPC classification number: C30B1/023 ,  C30B29/06 ,  C30B29/54 ,  Y10T117/10

Abstract: There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.

Abstract translation: 提供了一种使非晶硅结晶的方法，其包括：在衬底膜上形成第二非晶硅膜的层叠结构，然后形成第一非晶硅膜，第二非晶硅膜的晶体生长速度比第一非晶硅薄膜高 硅膜; 对所述层叠结构进行结晶化处理，使至少含有所述第二非晶硅膜的硅氧烷结晶化。

公开(公告)号：US20190272995A1

公开(公告)日：2019-09-05

申请号：US16291485

申请日：2019-03-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro Okada ,  Tatsuya Miyahara ,  Keisuke Fujita

IPC: H01L21/02 ,  H01L21/3065 ,  C23C14/14 ,  C23C14/54 ,  C23C14/58

Abstract: There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.

公开(公告)号：US10283405B2

公开(公告)日：2019-05-07

申请号：US15473489

申请日：2017-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro Okada ,  Satoshi Takagi

IPC: H01L21/76 ,  H01L21/768 ,  C23C16/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  H01L21/3205 ,  H01L21/3213

Abstract: A silicon film forming method of forming a silicon film in a recess with respect to a target substrate having on its surface an insulating film in which the recess is formed. The method includes (a) forming a first silicon film filling the recess by supplying a Silicon raw material gas onto the target substrate, (b) subsequently, etching the first silicon film by supplying a halogen-containing etching gas onto the target substrate such that surfaces of the insulating film on the target substrate and on an upper portion of an inner wall of the recess are exposed and such that the first silicon film remains in a bottom portion of the recess, and (c) subsequently, growing a second silicon film in a bottom-up growth manner on the first silicon film that remains in the recess by supplying a Silicon raw material gas onto the target substrate after the etching.

公开(公告)号：US09607830B2

公开(公告)日：2017-03-28

申请号：US14816584

申请日：2015-08-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro Okada

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52

CPC classification number: H01L21/02532 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/22 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0262

Abstract: There is provided a method of forming a germanium (Ge) film on a surface of a target object, which includes: supplying an aminosilane-based gas into a processing chamber in which the target object is loaded; supplying a high-order silane-based gas of disilane or higher into the processing chamber; and supplying a Ge source gas into the processing chamber. A process temperature in supplying the Ge source gas is set to fall within a range from a temperature, at which the Ge source gas is thermally decomposed or higher, to 300 degrees C. or less.