Abstract:
Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoribbon crystals along the [110] directions of the germanium.
Abstract:
Polymers having pendant polycyclic aromatic hydrocarbon (PAH) groups covalently bound to the polymer backbone via thioester bonds are provided. The PAH groups are covalently bound to the backbone of the polymer by a molecular linker that includes a thioester bond. Also provided are dispersions of polymer-coated carbon nanotubes and carbon nanotube films formed from the dispersions.
Abstract:
High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
Abstract:
Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials such as graphene. The atomic layer chemical patterns provide high resolution, low defect directed self-assembly. For example, DSA on a graphene pattern can be used achieve ten times the resolution of DSA that is achievable on a three-dimensional pattern such as a polymer brush. Assembly of block copolymers on the atomic layer chemical patterns may also facilitate subsequent etch, as the atomic layer chemical patterns are easier to etch than conventional pattern materials.
Abstract:
High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
Abstract:
High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is continuously supplied to the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
Abstract:
High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is spread over the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
Abstract:
High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is continuously supplied to the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.
Abstract:
Methods of transferring nanostructures from a first substrate to another substrate using a copolymer polymerized from one or more non-crosslinking monomers and one or more comonomers bearing crosslinkable groups as a transfer medium are provided. Relative to a poly(methyl methacrylate) homopolymer, the crosslinkable copolymers bond more strongly to the first substrate and, as a result, are able to transfer even very narrow nanostructures between substrates with high transfer yields.
Abstract:
Methods of sorting carbon nanotubes and methods of forming films of aligned carbon nanotubes using rod-coil copolymers are provided. The rod-coil copolymers have a tri-block or di-block architecture and include a conjugated polymer segment (“rod” segment) that binds the copolymer to the carbon nanotubes via pi-pi interactions and a non-conjugated polymer segment (“coil” segment) that aids with the sorting and dispersion of the carbon nanotubes in solution and/or controls the spacing of the carbon nanotubes in films made therefrom.