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    Resist composition
    11.
    发明授权
    Resist composition 失效
    抗蚀组成

    公开(公告)号：US08088547B2

    公开(公告)日：2012-01-03

    申请号：US11665506

    申请日：2005-09-20

    申请人： Sanlin Hu ,  Sina Maghsoodi ,  Eric Scott Moyer ,  Sheng Wang

    发明人： Sanlin Hu ,  Sina Maghsoodi ,  Eric Scott Moyer ,  Sheng Wang

    IPC分类号： G03C1/00 ,  G03F1/00 ,  C08G77/00 ,  C08G77/12

    CPC分类号： G03F7/0757

    摘要： A resist composition comprising (A) a hydrogen silsesquioxane resin, (B) an acid dissociable group-containing compound, (C) a photo-acid generator, (D) an organic solvent and optionally (E) additives. The resist composition has improved lithographic properties (such as high etch-resistance, transparency, resolution, sensitivity, focus latitude, line edge roughness, and adhesion) suitable as a photoresist.

    摘要翻译： 一种抗蚀剂组合物，其包含（A）氢倍半硅氧烷树脂，（B）含酸解离基团的化合物，（C）光酸产生剂，（D）有机溶剂和任选的（E）添加剂。 抗蚀剂组合物具有改进的适合作为光致抗蚀剂的光刻性能（例如高耐蚀刻性，透明度，分辨率，灵敏度，聚焦宽度，线边缘粗糙度和粘附）。

    Silsesquioxane resins
    14.
    发明授权
    Silsesquioxane resins 失效
    倍半硅氧烷树脂

    公开(公告)号：US08304161B2

    公开(公告)日：2012-11-06

    申请号：US12919039

    申请日：2009-02-03

    申请人： Michael L. Bradford ,  Eric Scott Moyer ,  Sheng Wang ,  Craig Rollin Yeakle

    发明人： Michael L. Bradford ,  Eric Scott Moyer ,  Sheng Wang ,  Craig Rollin Yeakle

    IPC分类号： G03F7/00 ,  G03F7/075 ,  G03F7/40 ,  C08G77/00 ,  C08G77/12

    CPC分类号： C08G77/28 ,  C08G77/04 ,  C08G77/12 ,  C08G77/70 ,  C09D183/04 ,  C09D183/08 ,  G02B1/04 ,  G03F7/0752 ,  G03F7/091 ,  C08L83/08 ,  C08L83/04

    摘要： A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR′)x)m, (HSiO(3-x)/2(OR′)x)n′(MeSiO(3-x)/2(OR′)x)o′(RSiO(3-x)/2(OR′)x)p, (R1SiO(3-x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.

    摘要翻译： 由单元（Ph（CH 2）r SiO（3-x）/ 2（OR'）x）m，（HSiO（3-x）/ 2（OR'）x）n'（MeSiO x）/ 2（OR'）x）o'（RSiO（3-x）/ 2（OR'）x）p，（R1SiO（3-x）/ 2（OR'）x）q其中Ph是苯基 组，我是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自芳基磺酸酯基; 并且R 1选自取代的苯基，酯基，聚醚基团; 巯基和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中，所述树脂m的值为0〜0.95; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; m + n + o + p + q = 1。

    High modulus, low dielectric constant coatings
    16.
    发明授权
    High modulus, low dielectric constant coatings 失效
    高模量，低介电常数涂层

    公开(公告)号：US06576300B1

    公开(公告)日：2003-06-10

    申请号：US09528835

    申请日：2000-03-20

    申请人： Ivan Louis Berry, III ,  Kyuha Chung ,  Qingyuan Han ,  Youfan Liu ,  Eric Scott Moyer ,  Michael John Spaulding

    发明人： Ivan Louis Berry, III ,  Kyuha Chung ,  Qingyuan Han ,  Youfan Liu ,  Eric Scott Moyer ,  Michael John Spaulding

    IPC分类号： C08J718

    CPC分类号： H01L21/3122 ,  C01B33/126 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31695 ,  Y10T428/31663

    摘要： Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si—H groups where the coating has been thermally cured and has a dielectric constant in the range of from about 1.1 to about 3.5, and plasma treating the coating to convert the coating into porous silica. Plasma treatment of the network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma treated for between about 15 and 120 seconds at a temperature less than or about 350° C. The plasma treated coating can optionally be annealed. Rapid thermal processing (RTP) of the plasma treated coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus as compared to the initial porous coating. The annealing temperature is preferably in excess of or about 350° C., and the annealing time is preferably at least or about 120 seconds. The annealed, plasma treated coating has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.

    摘要翻译： 具有改善的弹性模量的低介电常数膜。 制备这种涂层的方法包括提供由包含至少2个Si-H基团的树脂制备的多孔网络涂层，其中涂层已经被热固化并且介电常数在约1.1至约3.5的范围内，等离子体处理 将涂层转化成多孔二氧化硅的涂层。 网络涂层的等离子体处理产生具有改进模量但具有较高介电常数的涂层。 该涂层在低于或约350℃的温度下等离子体处理约15至120秒。等离子体处理的涂层可任选地退火。 与初始多孔涂层相比，等离子体处理的涂层的快速热处理（RTP）降低了涂层的介电常数，同时保持了改进的弹性模量。 退火温度优选超过或约350℃，退火时间优选为至少或约120秒。 退火的等离子体处理的涂层的介电常数在约1.1至约2.4的范围内，并具有改进的弹性模量。

    Silsesquioxane resin systems with base additives bearing electron-attracting functionalities
    17.
    发明授权
    Silsesquioxane resin systems with base additives bearing electron-attracting functionalities 有权
    倍半硅氧烷树脂体系，具有电子吸引功能的基础添加剂

    公开(公告)号：US08524439B2

    公开(公告)日：2013-09-03

    申请号：US12304263

    申请日：2007-06-27

    申请人： Sanlin Hu ,  Eric Scott Moyer

    发明人： Sanlin Hu ,  Eric Scott Moyer

    IPC分类号： G03F7/039

    CPC分类号： C08K5/5435

    摘要： A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiO3/2 units and RSiO3/2 units wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.

    摘要翻译： 含有（a）含有HSiO3 / 2单元和RSiO3 / 2单元的倍半硅氧烷树脂的倍半硅氧烷基组合物，其中： R是酸解离基团，和（b）7-二乙基氨基-4-甲基香豆素。 基于倍半硅氧烷的组合物可用作在衬底上形成图案特征的正性抗蚀剂组合物，特别适用于193nm和157nm多层（即双层）光刻应用。

    Nanoscale Photolithography
    18.
    发明申请
    Nanoscale Photolithography 审中-公开
    纳米级光刻

    公开(公告)号：US20130189495A1

    公开(公告)日：2013-07-25

    申请号：US13877227

    申请日：2011-11-07

    申请人： Peng-Fei Fu ,  Lingjie Jay Guo ,  Eric Scott Moyer ,  Carlos Pina-Hernandez

    发明人： Peng-Fei Fu ,  Lingjie Jay Guo ,  Eric Scott Moyer ,  Carlos Pina-Hernandez

    IPC分类号： B05D1/36

    CPC分类号： B05D1/36 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/165 ,  G03F7/405 ,  Y10T428/24479 ,  Y10T428/24612

    摘要： A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods.

    摘要翻译： 描述了一种可以减小带有表面羟基的图案结构的特征尺寸的简单实用的方法。 图案化结构可以通过任何图案化技术获得，例如光刻，电子束光刻，纳米压印光刻。 该方法包括：（1）通过处理胺剂，优选环状化合物，首先将羟基或硅烷醇富含表面转化为富含胺的表面; （2）在图案化结构的顶部涂覆环氧树脂材料; （3）通过表面引发聚合施加热量时形成额外的层; （4）施加胺偶联剂以再生富含胺的表面; （5）在图案化结构的顶部涂覆环氧树脂材料以形成下一层; （6）重复步骤4和5以形成多层; 该方法允许制造通过常规光刻方法难以达到的各种图案和接触孔的特征尺寸。

    Antireflective coating material
    19.
    发明授权
    Antireflective coating material 失效
    防反射涂料

    公开(公告)号：US08263312B2

    公开(公告)日：2012-09-11

    申请号：US12160325

    申请日：2006-12-07

    申请人： Peng-Fei Fu ,  Eric Scott Moyer

    发明人： Peng-Fei Fu ,  Eric Scott Moyer

    IPC分类号： G03F7/00

    CPC分类号： G03F7/091 ,  G03F7/0752 ,  Y10T428/31663

    摘要： Antireflective coatings comprising (i) a silsesquioxane resin having the formula (PhSiO(3-x)/2(OH)x)mHSiO(3-x)/2(OH)x)n(MeSiO(3-x)/2(OH)x)p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m+n+p=1; (ii) a polyethylene oxide fluid; and (iii) a solvent; and a method of forming said antireflective coatings on an electronic device.

    摘要翻译： 抗反射涂层，其包含（i）具有式（PhSiO（3-x）/ 2（OH）x）mHSiO（3-x）/ 2（OH）x）n（MeSiO（3-x）/ 2 OH）x）p，其中Ph是苯基，Me是甲基，x具有0,1或2的值; m的值为0.01〜0.99，n为0.01〜0.99，p为0.01〜0.99，m + n + p = 1。 （ii）聚环氧乙烷流体; 和（iii）溶剂; 以及在电子设备上形成所述抗反射涂层的方法。

    Silsesquioxane Resins
    20.
    发明申请
    Silsesquioxane Resins 有权
    倍半硅氧烷树脂

    公开(公告)号：US20110003480A1

    公开(公告)日：2011-01-06

    申请号：US12919052

    申请日：2009-02-03

    申请人： Peng-Fei Fu ,  Eric Scott Moyer

    发明人： Peng-Fei Fu ,  Eric Scott Moyer

    IPC分类号： H01L21/3205 ,  C08G77/12 ,  C08L83/05 ,  C08L43/04 ,  C08K5/101 ,  F21V9/00

    CPC分类号： C09D183/04 ,  C08G77/04 ,  C08G77/045 ,  C08G77/12 ,  C08G77/14 ,  C08G77/70 ,  G02B1/111 ,  G03F7/0752 ,  G03F7/091

    摘要： This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin is comprised of the units (Ph(CH2)rSiO(3−x)/2(OR′)x)m (HSiO(3−x)/2(OR′)x)n (MeSiO(3−x)/2(OR′)x)o (RSiO(3−x)/2(OR′)x)p (R1SiO(3−x)/2(OR′)x)q where Ph is a phenyl group, Me is a methyl group; R′ is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a hydroxyl producing group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q≈1.

    摘要翻译： 本发明涉及可用于抗反射涂料的倍半硅氧烷树脂，其中倍半硅氧烷树脂由单元（Ph（CH 2）r SiO（3-x）/ 2（OR'）x）m（HSiO（3-x）/ 2 '（x'）x（x）n（MeSiO（3-x）/ 2（OR'）x）o（RSiO（3-x）/ 2 其中Ph是苯基，Me是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自羟基生成基团; 并且R 1选自取代的苯基，酯基，聚醚基团; 巯基，以及活性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中，所述树脂m的值为0〜0.95; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; 和m + n + o + p +q≈1。