公开(公告)号：US08653807B2

公开(公告)日：2014-02-18

申请号：US12841833

申请日：2010-07-22

Applicant: Peter M Kopalidis ,  Zhimin Wan

Inventor： Peter M Kopalidis ,  Zhimin Wan

IPC: G01N27/00 ,  G01N27/62 ,  H01J37/08 ,  A61N5/00

CPC classification number: G01N27/404

Abstract: Techniques for ion beam current measurement, especially for measuring low energy ion beam current, are disclosed. In one exemplary embodiment, the techniques may be realized as an ion beam current measurement apparatus has at least a planar Faraday cup and a magnet device. The planar Faraday cup is close to an inner surface of a chamber wall, and may be non-parallel to or parallel to the inner surface. The magnet device is located close to the planar Faraday cup. Therefore, by properly adjusting the magnetic field, secondary electrons, incoming electrons and low energy ions may be adequately suppressed. Further, the planar Faraday cup may surround an opening of an additional Faraday cup being any conventional Faraday cup. Therefore, the whole ion beam may be received and measured well by the larger cross-section area of at least the planar Faraday cup on the ion beam path.

Abstract translation: 公开了用于离子束电流测量的技术，特别是用于测量低能量离子束电流。 在一个示例性实施例中，可以实现这些技术，因为离子束电流测量装置至少具有平面的法拉第杯和磁体装置。 平面法拉第杯靠近腔壁的内表面，并且可以不平行于或平行于内表面。 磁铁装置靠近平面法拉第杯。 因此，通过适当地调整磁场，可以适当地抑制二次电子，入射电子和低能离子。 此外，平面法拉第杯可以围绕任何常规法拉第杯的附加法拉第杯的开口。 因此，可以通过离子束路径上的至少平面法拉第杯的较大横截面面积良好地接收和测量整个离子束。

公开(公告)号：US08334517B2

公开(公告)日：2012-12-18

申请号：US13012759

申请日：2011-01-24

Applicant: Ko-Chuan Jen ,  Zhimin Wan

Inventor： Ko-Chuan Jen ,  Zhimin Wan

IPC: H01J3/24 ,  G21K5/04

CPC classification number: H01J37/3171 ,  H01J37/141 ,  H01J2237/24542

Abstract: Apparatus and method for adjusting an ion beam between a mass analyzer and a substrate holder. Herein, one or more bended, such as arch-shaped, curved or zigzag shaped, bar magnets are configured to apply one or more magnetic fields to adjust the shape or cross section of an ion beam passing through a space partially surrounded by the one or more bended bar magnets. At least one of the gap width between neighbor bended bar magnets, the curvature of each bended bar magnet and the current flowing through each bended bar magnet may be fixed or adjusted dependently or independently. Therefore, the Lorentz force applied on the ion beam along different directions may be changed in a desired manner, and then the ion beam may be flexibly elongated, compressed or shaped to meet the process requirement.

Abstract translation: 用于调整质量分析器和衬底保持器之间的离子束的装置和方法。 这里，一个或多个弯曲的，例如拱形，弯曲或锯齿形的棒状磁体被构造成施加一个或多个磁场以调节通过部分地围绕一个或多个磁体的空间的离子束的形状或横截面， 更弯曲的酒吧磁铁。 相邻的弯曲棒状磁体之间的间隙宽度中的至少一个，每个弯曲棒状磁体的曲率和流过每个弯曲磁体的磁体的电流可以相关地或独立地被固定或调节。 因此，沿着不同方向施加在离子束上的洛伦兹力可以以期望的方式改变，然后离子束可以灵活地伸长，压缩或成形以满足工艺要求。

公开(公告)号：US20120097861A1

公开(公告)日：2012-04-26

申请号：US13280162

申请日：2011-10-24

Applicant: Nicholas White ,  Zhimin Wan ,  Erik Collart

Inventor： Nicholas White ,  Zhimin Wan ,  Erik Collart

IPC: H01J3/20 ,  H01J3/14 ,  H01J3/26

CPC classification number: H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/1472 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/151 ,  H01J2237/303 ,  H01J2237/31701

Abstract: A deceleration apparatus capable of decelerating a short spot beam or a tall. ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

Abstract translation: 减速装置，能够使短点梁或高度减速。 公开了带状束。 在任一种情况下，都会控制趋向于降低光束轮廓形状的效果。 提供了用于将离子束屏蔽到外部电位的盖子。 其位置和电位可调的电极设置在梁的相对两侧，以确保减速和偏转电场的形状不会显着偏离最佳形状，即使存在显着的空间电荷高 目前低能量的重离子束。

公开(公告)号：US07807986B1

公开(公告)日：2010-10-05

申请号：US12473167

申请日：2009-05-27

Applicant: Ko-Chuan Jen ,  York Yang ,  Zhimin Wan

Inventor： Ko-Chuan Jen ,  York Yang ,  Zhimin Wan

IPC: H01J37/317 ,  H01J49/20

CPC classification number: H01J37/3171 ,  H01J37/147 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542

Abstract: An ion implanter and method for adjusting the shape of an ion beam are disclosed. After an ion beam is outputted from an analyzer magnet unit, at least one set of bar magnets is used to adjust the shape of the ion beam when the ion beam passes through a space enclosed by the bar magnets. The set of bar magnets can apply a multi-stage magnetic field on the ion beam. Hence, different portions of the ion beam will have different deformations or alterations, because the multi-stage magnetic field will apply a non-uniform force to change the trajectory of ions. Moreover, each bar magnet of the set is powered by one and only one power source, such that the set of bar magnets essentially only can adjust the magnitude of the multi-stage magnetic field. Particular structures and techniques for achieving the multi-stage magnetic field are not limited.

Abstract translation: 公开了一种用于调节离子束形状的离子注入机和方法。 在从分析器磁体单元输出离子束之后，当离子束通过由棒状磁体包围的空间时，使用至少一组棒状磁体来调节离子束的形状。 该组磁棒可以在离子束上施加多级磁场。 因此，离子束的不同部分将具有不同的变形或变化，因为多级磁场将施加不均匀的力来改变离子的轨迹。 此外，该组的每个棒状磁体由一个且仅一个电源供电，使得该组磁棒基本上只能够调整多级磁场的大小。 用于实现多级磁场的特定结构和技术不受限制。

公开(公告)号：US06579420B2

公开(公告)日：2003-06-17

申请号：US09780212

申请日：2001-02-09

Applicant: Zhimin Wan ,  Jiong Chen ,  Peiching Ling ,  Jianmin Qiao

Inventor： Zhimin Wan ,  Jiong Chen ,  Peiching Ling ,  Jianmin Qiao

IPC: C23C1600

CPC classification number: C23C14/505 ,  C23C14/044 ,  C23C14/46

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a laterally reciprocal moving means for reciprocally moving said substrate holder for said beam traversing on said substrate holder from one side of the edge to the other side of the edge or at least passing through the central area of said substrate holder.

公开(公告)号：US08941077B2

公开(公告)日：2015-01-27

申请号：US13280162

申请日：2011-10-24

Applicant: Nicholas White ,  Zhimin Wan ,  Erik Collart

Inventor： Nicholas White ,  Zhimin Wan ,  Erik Collart

IPC: H01J1/88 ,  H01J3/26 ,  H01J3/04 ,  H01J37/317

CPC classification number: H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/1472 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/151 ,  H01J2237/303 ,  H01J2237/31701

Abstract: A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

Abstract translation: 公开了一种减速装置，能够使短点光束或高色带光束减速。 在任一种情况下，都会控制趋向于降低光束轮廓形状的效果。 提供了用于将离子束屏蔽到外部电位的盖子。 其位置和电位可调的电极设置在梁的相对两侧，以确保减速和偏转电场的形状不会显着偏离最佳形状，即使存在显着的空间电荷高 目前低能量的重离子束。

公开(公告)号：US20120196047A1

公开(公告)日：2012-08-02

申请号：US13016912

申请日：2011-01-28

Applicant: Cheng-Hui Shen ,  Zhimin Wan

Inventor： Cheng-Hui Shen ,  Zhimin Wan

IPC: C23C14/48 ,  G06G7/62 ,  G06F17/10 ,  B05C11/00

CPC classification number: H01J37/3171 ,  H01J2237/304 ,  H01J2237/31703

Abstract: To select a relative velocity profile to be used in scanning an actual work piece with an ion implant beam of an ion implantation tool, the implantation of a virtual work piece is simulated. A dose distribution is calculated across the virtual work piece based on an implant beam profile and a relative velocity profile. A new relative velocity profile is then determined based on the calculated dose distribution and the relative velocity profile used in calculating the dose distribution. A new dose distribution is then calculated using the new relative velocity profile. A new relative velocity profile is determined and a corresponding new dose distribution is calculated iteratively until the new dose distribution meets one or more predetermined criteria. The new relative velocity profile is stored as the selected relative velocity profile when the new dose distribution meets the one or more predetermined criteria.

Abstract translation: 为了选择用离子注入工具的离子注入光束扫描实际工件所使用的相对速度分布，模拟了虚拟工件的注入。 基于植入物轮廓和相对速度分布，跨虚拟工件计算剂量分布。 然后基于计算的剂量分布和用于计算剂量分布的相对速度分布来确定新的相对速度分布。 然后使用新的相对速度分布计算新的剂量分布。 确定新的相对速度分布，并且迭代地计算相应的新剂量分布，直到新的剂量分布满足一个或多个预定标准。 当新剂量分布满足一个或多个预定标准时，新的相对速度分布被存储为所选择的相对速度分布。

公开(公告)号：US08124508B2

公开(公告)日：2012-02-28

申请号：US12750983

申请日：2010-03-31

Applicant: John D. Pollock ,  Zhimin Wan ,  Erik Collart

Inventor： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC: H01L21/425

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

公开(公告)号：US20100310341A1

公开(公告)日：2010-12-09

申请号：US12479288

申请日：2009-06-05

Applicant: Peter MOK ,  Ko-Chuan Jen ,  Zhimin Wan

Inventor： Peter MOK ,  Ko-Chuan Jen ,  Zhimin Wan

IPC: H01L21/673

CPC classification number: H01L21/68764 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/20207 ,  H01J2237/20228 ,  H01J2237/204 ,  H01L21/67213 ,  Y10T29/53961

Abstract: A system and a method for moving a wafer during scanning the wafer by an ion beam. The proposed system includes an extendable/retractable arm, a holding apparatus and a driving apparatus. At least a length of the extendable/retractable arm is adjustable. The holding apparatus is capable of holding a wafer and is fixed on a specific portion of the extendable/retractable arm. Furthermore, the driving apparatus is capable of extending and/or retracting the extendable/retractable arm, such that the holding apparatus is moved together with the specific portion. In addition, the proposed method includes the following steps. First, hold the wafer by a holding apparatus fixed on a specific portion of an extendable/retractable arm. After that, adjust a length of the extendable/retractable. Therefore, the holding apparatus, i.e. the wafer, can be moved by the extension/retraction of the extendable/retractable arm.

Abstract translation: 一种用于在通过离子束扫描晶片期间移动晶片的系统和方法。 所提出的系统包括可伸缩臂，保持装置和驱动装置。 可伸缩臂的至少一段长度是可调节的。 保持装置能够保持晶片并固定在可伸缩臂的特定部分上。 此外，驱动装置能够延伸和/或缩回可伸缩臂，使得保持装置与特定部分一起移动。 此外，所提出的方法包括以下步骤。 首先，通过固定在可伸缩臂的特定部分上的保持装置来保持晶片。 之后，调整可伸缩的长度。 因此，保持装置即晶片可以通过伸缩臂的伸缩来移动。

公开(公告)号：US07750323B1

公开(公告)日：2010-07-06

申请号：US12465189

申请日：2009-05-13

Applicant: Zhimin Wan ,  Cheng-Hui Shen ,  Ko-Chuan Jen

Inventor： Zhimin Wan ,  Cheng-Hui Shen ,  Ko-Chuan Jen

IPC: H01J37/317 ,  H01J37/08 ,  H01L21/265

CPC classification number: H01J37/3172 ,  H01J37/3023 ,  H01J2237/043 ,  H01J2237/045 ,  H01J2237/30461 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: An ion implanter and a method for implanting a wafer are provided, wherein the method includes the following steps. First, a wafer has at least a first portion requiring a first doping density and a second portion requiring a second doping density is provided. The first doping density is larger than the second doping density. Thereafter, the first portion is scanned by an ion beam with a first scanning parameter value, and the second portion is scanned by the ion beam with a second scanning parameter value. The first scanning parameter value can be a first scan velocity, and the second scanning parameter value can be a second scan velocity different than the first scan velocity. Alternatively, the first scanning parameter value can be a first beam current, and the second scanning parameter value can be a second beam current different than the first beam current.

Abstract translation: 提供一种用于植入晶片的离子注入机和方法，其中该方法包括以下步骤。 首先，晶片至少具有需要第一掺杂密度的第一部分，并且提供需要第二掺杂密度的第二部分。 第一掺杂密度大于第二掺杂密度。 此后，通过具有第一扫描参数值的离子束扫描第一部分，并且用第二扫描参数值用离子束扫描第二部分。 第一扫描参数值可以是第一扫描速度，并且第二扫描参数值可以是不同于第一扫描速度的第二扫描速度。 或者，第一扫描参数值可以是第一束电流，并且第二扫描参数值可以是不同于第一束电流的第二束电流。