公开(公告)号：US09959858B2

公开(公告)日：2018-05-01

申请号：US15228313

申请日：2016-08-04

申请人： Koji Otsuka ,  Yumi Shimazaki ,  Kozo Ando

发明人： Koji Otsuka ,  Yumi Shimazaki ,  Kozo Ando

IPC分类号： G10K11/175 ,  G10K11/16 ,  G10K11/178 ,  H04R1/08 ,  H04R1/10

CPC分类号： G10K11/175 ,  G10K11/16 ,  G10K11/178 ,  G10K2210/1081 ,  G10K2210/509 ,  H04R1/086 ,  H04R1/1083 ,  H04R2460/01

摘要： A noise-cancelling headphone is provided that avoids an influence of the wind and prevents degradation in the sound quality of the reproduced sound output from a driver unit. The noise-cancelling headphone includes an ear piece including a housing unit having an interior and an exterior, a driver unit attached to the housing unit, and a microphone collecting external sounds at the exterior of the housing unit. The housing unit includes an accommodating portion accommodating the microphone and a sound collecting hole establishing the communication between the accommodating portion and the exterior of the housing unit. The accommodating portion is disposed in an upper portion of the housing unit of the noise-cancelling headphone when worn by the user. The sound collecting hole is open toward the upper side of the housing unit of the noise-cancelling headphone when worn by the user.

公开(公告)号：US20120063141A1

公开(公告)日：2012-03-15

申请号：US13208014

申请日：2011-08-11

申请人： Koji Otsuka

发明人： Koji Otsuka

IPC分类号： F21S8/04

CPC分类号： H01L33/58 ,  F21V5/007 ,  F21V5/04 ,  F21V7/0091 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2115/10 ,  G02B19/0028 ,  G02B19/0066 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

摘要： A lighting device is provided to include a plurality of lens bodies. The connecting portion connecting the plurality of lens bodies includes a first major surface and a second major surface opposite to the first major surface. The first major surface is in contact with the lateral portion at a first contact under an outer edge of the leading lens. The second major surface is in contact with the lateral portion at a second contact located below the first contact. The first contact is located outside of a point of intersection along the first major surface with respect to the center of each lens body, the point of intersection at which an extraction of the first major surface intersects with an extension of a ray of the emitted light which is incident on the light incident surface and is projected on the second contact.

摘要翻译： 提供照明装置以包括多个透镜体。 连接多个透镜体的连接部分包括与第一主表面相对的第一主表面和第二主表面。 第一主表面在引导透镜的外边缘处的第一接触处与侧部接触。 第二主表面位于第一触点下方的第二触点处与侧部接触。 相对于每个透镜体的中心，第一触点位于沿第一主表面的交点以外，第一主表面的提取与发射光线的延伸相交的交点 其入射在光入射表面上并且被投影在第二触点上。

公开(公告)号：US20110120993A1

公开(公告)日：2011-05-26

申请号：US12950478

申请日：2010-11-19

申请人： Kathryn Marie Birchmeier ,  Paul Andrew Cogley ,  Noriko Sakamoto ,  Koji Otsuka ,  Takashi Kado

发明人： Kathryn Marie Birchmeier ,  Paul Andrew Cogley ,  Noriko Sakamoto ,  Koji Otsuka ,  Takashi Kado

IPC分类号： H05B6/80 ,  B65D25/04 ,  B65D1/34

CPC分类号： A23L5/15 ,  B65D1/36 ,  B65D77/2016 ,  B65D81/3453 ,  H05B6/6408

摘要： A multi-component package is provided which enables simultaneous heat cooking of a food product which does not require a long cooking time and a food product which requires a longer cooking time. The multi-component package includes a lower container comprising a bottomed, lower container main body for containing a first food product. The container further includes an upper container comprising an upper container main body for containing a second filled food product. A flange of the lower container main body and a flange of the upper container main body are engaged with each other so that the lower container and the upper container are combined integrally. A vapor vent is provided in a lower container lid material, whereby water vapor generated upon heating of the first food product heats the second food product in the upper container.

摘要翻译： 提供了一种多组件包装，其能够同时进行不需要较长烹饪时间的食品的热烹饪和需要更长烹饪时间的食品。 该多组件包装件包括一个下容器，该容器包括用于容纳第一食品的有底的下容器主体。 该容器还包括一上部容器，该容器包括用于容纳第二填充食品的上容器主体。 下容器主体的凸缘和上容器主体的凸缘彼此接合，使得下容器和上容器组合成一体。 在下部容器盖材料中设置蒸气排出口，由此在第一食品加热时产生的水蒸气加热上部容器中的第二食品。

公开(公告)号：US07923738B2

公开(公告)日：2011-04-12

申请号：US12265887

申请日：2008-11-06

申请人： Hitoshi Murofushi ,  Koji Otsuka

发明人： Hitoshi Murofushi ,  Koji Otsuka

IPC分类号： H01L29/18

CPC分类号： H01L27/153 ,  G03G15/04054 ,  G03G15/326 ,  H01L33/385 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An array of LEDs are grown by epitaxy on row-connecting conductor strips extending in parallel spaced relationship to one another on the surface of a semiconductor substrate and are thereby electrically interconnected in rows. The row-connecting conductor strips are formed by ion implantation of a p-type dopant into parts of an n-type silicon substrate. Column-connecting conductor strips extend over the light-emitting surfaces of the LEDs for electrically interconnecting them in columns. The LEDs are lit up individually by voltage application between one of the row-connecting conductor strips and one of the column-connecting conductor strips.

摘要翻译： LED阵列通过在半导体衬底的表面上彼此平行间隔延伸的行连接导体条上进行外延生长，从而以行电互连。 行连接导体条通过将p型掺杂剂离子注入到n型硅衬底的部分中而形成。 列连接导体条在LED的发光表面上延伸，以将它们串联在列中。 通过在一行之间的行连接导体条和一个列连接导体条之间的电压单独点亮LED。

公开(公告)号：US07671375B2

公开(公告)日：2010-03-02

申请号：US11378963

申请日：2006-03-17

申请人： Koji Otsuka ,  Tetsuji Moku ,  Junji Sato ,  Yoshiki Tada ,  Takashi Yoshida

发明人： Koji Otsuka ,  Tetsuji Moku ,  Junji Sato ,  Yoshiki Tada ,  Takashi Yoshida

IPC分类号： H01L33/00

CPC分类号： H01L29/267 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/2003 ,  H01L33/007

摘要： A light-emitting diode is built on a silicon substrate which has been doped with a p-type impurity to possess sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has epitaxially grown thereon a buffer region of n-type AlInGaN. Further grown epitaxially on the buffer region is the main semiconductor region of the LED which comprises a lower confining layer of n-type GaN, an active layer for generating light, and an upper confining layer of p-type GaN. In the course of the growth of the buffer region and main semiconductor region there occurs a thermal diffusion of gallium and other Group III elements from the buffer region into the p-type silicon substrate, with the consequent creation of a p-type low-resistance region in the substrate. Interface levels are created across the heterojunction between p-type silicon substrate and n-type buffer region. The interface levels expedite carrier transport from substrate to buffer region, contributing to reduction of the drive voltage requirement of the LED.

摘要翻译： 在已经掺杂有p型杂质的硅衬底上建立发光二极管以具有足够的导电性以提供通过LED的电流路径的一部分。 p型硅衬底在其上外延生长n型AlInGaN的缓冲区。 在缓冲区域外延生长的是LED的主要半导体区域，其包括n型GaN的下约束层，用于产生光的有源层和p型GaN的上部约束层。 在缓冲区和主半导体区域的生长过程中，发生镓和其他III族元素从缓冲区到p型硅衬底的热扩散，随之产生p型低电阻 区域。 在p型硅衬底和n型缓冲区之间的异质结上形成界面电平。 接口电平加快了从衬底到缓冲区域的载流子传输，有助于降低LED的驱动电压要求。

公开(公告)号：US20090129706A1

公开(公告)日：2009-05-21

申请号：US11995158

申请日：2006-05-15

申请人： Koji Otsuka ,  Wakako Yoshimura ,  Yasunori Honzawa

发明人： Koji Otsuka ,  Wakako Yoshimura ,  Yasunori Honzawa

IPC分类号： B65D33/16

CPC分类号： B65D75/5866 ,  B65D75/5822 ,  Y10S383/906

摘要： There is provided a bag with a pouring spout that can surely improve opening properties and shape retention of a spout port part without the need to render the spout port part bulky, can prevent clogging of the spout port part caused by flexing of the spout port part, and can reliably and easily spout the contents of the bag. The bag with a pouring spout comprises a narrow-width spout port part 10 provided at one end of a laminated film bag, characterized in that in the region of the spout port part, a tape shaped sheet material 50, which has been cut into a desired length, is applied to the inner surface of at least one of laminated films 1,1′ provided on both respective sides of the bag.

摘要翻译： 提供了一种具有倾倒口的袋子，其可以确保地改善喷嘴端口部件的开口性能和形状保持性，而不需要使出口部分膨胀，从而可以防止由于出口部分的弯曲而引起的喷口端口部分的堵塞 ，并能够可靠且容易地喷出袋的内容物。 具有倾倒口的袋子包括设置在层压薄膜袋的一端的窄宽度的出口口部分10，其特征在于，在所述出口端口部分的区域中，已经切割成 所需长度被施加到设置在袋的两侧的层压膜1,1'中的至少一个的内表面。

公开(公告)号：US07342666B2

公开(公告)日：2008-03-11

申请号：US11258955

申请日：2005-10-27

申请人： Nobuaki Ueki ,  Koji Otsuka

发明人： Nobuaki Ueki ,  Koji Otsuka

IPC分类号： G01B11/02 ,  G01L1/24

CPC分类号： G03F1/84 ,  G01B11/2441

摘要： There are carried out a first measurement operation for measuring the shape of a front surface of a sample held in a held state, a second measurement operation for measuring the shape of a back surface of the sample held in the same state, and a third measurement operation for measuring the shape of the back surface of the sample held so as to cause inverse distortion. First data are acquired on the basis of the front surface shape data obtained through the first measurement operation and the back surface shape data obtained through the second measurement operation. Second data are obtained on the basis of the front surface shape data obtained through the first measurement operation and the back surface shape data obtained through the third measurement operation. Holding distortion is determined on the basis of the first and second data.

摘要翻译： 进行用于测量保持在保持状态的样品的正面的形状的第一测量操作，用于测量保持在相同状态的样品的背面的形状的第二测量操作和第三测量 用于测量保持的样品的背面的形状以产生反变形的操作。 基于通过第一测量操作获得的前表面形状数据和通过第二测量操作获得的背面形状数据获取第一数据。 基于通过第一测量操作获得的前表面形状数据和通过第三测量操作获得的背面形状数据获得第二数据。 基于第一和第二数据确定保持失真。

公开(公告)号：US20070102711A1

公开(公告)日：2007-05-10

申请号：US11619079

申请日：2007-01-02

申请人： Hidekazu Aoyagi ,  Koji Otsuka

发明人： Hidekazu Aoyagi ,  Koji Otsuka

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079

摘要： An LED has a light-generating semiconductor region formed on a baseplate via an electroconductive reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types for generating light. For good ohmic contact with the light-generating semiconductor region without any substantive diminution of reflectivity compared to that of unalloyed silver, the reflector layer is made from a silver-base alloy containing a major proportion of silver and at least either one of copper, gold, palladium, neodymium, silicon, iridium, nickel, tungsten, zinc, gallium, titanium, magnesium, yttrium, indium, and tin.

摘要翻译： LED具有通过导电反射层在基板上形成的发光半导体区域。 光产生半导体区域具有夹在一对相反导电类型的包层之间的活性层，用于产生光。 为了与发光半导体区域良好的欧姆接触，与非合金银相比，反射率没有任何明显的降低，反射层由含有主要比例的银和至少一种铜，金的银基合金制成 ，钯，钕，硅，铱，镍，钨，锌，镓，钛，镁，钇，铟和锡。

公开(公告)号：US07173311B2

公开(公告)日：2007-02-06

申请号：US11048954

申请日：2005-02-02

申请人： Junji Sato ,  Koji Otsuka ,  Tetsuji Moku ,  Takashi Kato ,  Arei Niwa ,  Yasuhiro Kamii

发明人： Junji Sato ,  Koji Otsuka ,  Tetsuji Moku ,  Takashi Kato ,  Arei Niwa ,  Yasuhiro Kamii

IPC分类号： H01L23/62

CPC分类号： H01L33/385 ,  H01L24/05 ,  H01L27/15 ,  H01L2224/04042 ,  H01L2224/05555 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： An overvoltage-proof light-emitting diode has a lamination of light-generating semiconductor layers on a first major surface of a silicon substrate. A front electrode in the form of a bonding pad is mounted centrally atop the light-generating semiconductor layers whereas a back electrode covers a second major surface of the substrate. An overvoltage protector, of which several different forms are disclosed, is disposed between the bonding pad and the second major surface of the substrate. The bonding pad and back electrode serves as electrodes for both LED and overvoltage protector. As seen from above the device, or in a direction normal to the first major surface of the substrate, the overvoltage protector lies substantially wholly beneath the bonding pad.

摘要翻译： 耐过电压的发光二极管在硅衬底的第一主表面上层叠有发光半导体层。 形成焊盘形式的前电极安装在发光半导体层上方的中央，而后电极覆盖基板的第二主表面。 公开了几种不同形式的过电压保护器设置在接合焊盘和衬底的第二主表面之间。 接合焊盘和背面电极用作LED和过电压保护器的电极。 从设备的上方或者垂直于衬底的第一主表面的方向看，过电压保护器基本上位于接合焊盘的下方。

公开(公告)号：US20060275937A1

公开(公告)日：2006-12-07

申请号：US11502642

申请日：2006-08-11

申请人： Hidekazu Aoyagi ,  Koji Otsuka ,  Masahiro Sato

发明人： Hidekazu Aoyagi ,  Koji Otsuka ,  Masahiro Sato

IPC分类号： H01L21/00

CPC分类号： H01L33/14 ,  H01L33/007 ,  H01L33/04

摘要： A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.

摘要翻译： 具有硅衬底的发光二极管，其上依次形成缓冲层，p型氮化物半导体层，有源层，n型氮化物半导体层和电流扩展层。 电流扩展层是交替需要次数布置的第一和第二子层的叠层。 由不同的化合物半导体组成，电流扩展层的交替子层产生用于提供二维气体效应的异质结。 电流扩散层在平行于其从其发射光的主表面的方向上的电阻率如此低，使得电流有利地扩散在其中以提高发光效率。 金属焊盘形式的前电极以电流扩散层的主表面中心地安装在其与其电阻接触的位置。