公开(公告)号：US5617438A

公开(公告)日：1997-04-01

申请号：US567982

申请日：1995-12-11

申请人： Ako Hatano ,  Yasuo Ohba

发明人： Ako Hatano ,  Yasuo Ohba

IPC分类号： H01S5/323 ,  H01S5/327 ,  H01S3/19

CPC分类号： H01S5/32341 ,  H01S5/327 ,  H01S2302/00

摘要： A semiconductor laser having an oscillation wavelength of not more than 450 nm comprises a substrate, a lower cladding layer containing a III-V Group compound semiconductor as a main component formed on the substrate, an active layer containing the III-V Group compound semiconductor as a main component formed on the lower cladding layer and an upper p-type cladding layer containing III-V Group compound semiconductor as a main component. Mg and Si are contained in the upper p-type cladding layer. A GaN series compound semiconductor is preferably used as the III-V Group compound semiconductor and the upper cladding layer contains preferably not less than 5.times.10.sup.18 /cm.sup.3 of Si.

摘要翻译： 振荡波长在450nm以下的半导体激光器包括基板，在基板上形成有III-V族化合物半导体作为主要成分的下包层，含有III-V族化合物半导体的活性层为 形成在下包层上的主要成分和含有III-V族化合物半导体作为主要成分的上部p型包覆层。 Mg和Si包含在上p型包覆层中。 优选使用GaN系化合物半导体作为III-V族化合物半导体，上部包层优选含有5×10 18 / cm 3以上的Si。

公开(公告)号：US5432808A

公开(公告)日：1995-07-11

申请号：US212787

申请日：1994-03-15

申请人： Ako Hatano ,  Yasuo Ohba

发明人： Ako Hatano ,  Yasuo Ohba

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01S5/02 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01S5/32341 ,  H01S2304/04 ,  H01S5/021

摘要： A compound semiconductor light-emitting device includes a cubic SiC substrate, and an Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on the (111) surface of the cubic-crystal SiC substrate. The surface of the Ga.sub.x Al.sub.y In.sub.1-x-y N layer, which opposes the substrate, is an N surface, and the light-emitting device has a pn junction.

摘要翻译： 化合物半导体发光器件包括立方体SiC衬底和形成在（111）表面上的GaxAlyIn1-x-yN（0≤x≤1,0≤y≤1）层 立方晶SiC衬底。 与衬底相对的GaxAlyIn1-x-yN层的表面是N表面，并且发光器件具有pn结。

公开(公告)号：US5273933A

公开(公告)日：1993-12-28

申请号：US917321

申请日：1992-07-23

申请人： Ako Hatano ,  Toshihide Izumiya ,  Yasuo Ohba

发明人： Ako Hatano ,  Toshihide Izumiya ,  Yasuo Ohba

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/34 ,  H01L21/20

CPC分类号： H01L33/34 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02477 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0037 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0087 ,  Y10S438/925

摘要： In a process of manufacturing a short-wavelength-light emitting element, n- and p-type GaInAlN films are formed on a substrate made of SiC, using an MOCVD method. (CH.sub.3).sub.3 SiN.sub.3 is used as raw material for nitrogen. The films are grown at a relatively low temperature and the amount of nitrogen doped in the films is increased.

摘要翻译： 在制造短波长发光元件的过程中，使用MOCVD法在由SiC制成的衬底上形成n型和p型GaInAlN膜。 （CH3）3SiN3用作氮原料。 膜在相对低的温度下生长，并且膜中掺杂的氮的量增加。

公开(公告)号：US5235194A

公开(公告)日：1993-08-10

申请号：US819976

申请日：1992-01-13

申请人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

发明人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

IPC分类号： H01L33/00 ,  H01L33/30

CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01L2224/48463 ,  H01L2224/4918 ,  H01L2224/73265

摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

摘要翻译： 半导体发光器件包括由多个In x Ga y Al 1-x-y P（0

公开(公告)号：US5103271A

公开(公告)日：1992-04-07

申请号：US588858

申请日：1990-09-27

申请人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

发明人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

IPC分类号： H01L33/00 ,  H01L33/30

CPC分类号： H01L33/30 ,  H01L33/0062

摘要： A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.l-x-y P (0.ltoreq.x, y.ltoreq.l) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.l-w Al.sub.w As (0.ltoreq.w.ltoreq.l) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer even though its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

公开(公告)号：US5005057A

公开(公告)日：1991-04-02

申请号：US508685

申请日：1990-04-13

申请人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

发明人： Toshihide Izumiya ,  Yasuo Ohba ,  Ako Hatano

IPC分类号： H01L21/205 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/34 ,  H01L33/54 ,  H01L33/56

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2924/181

摘要： A blue LED which includes a light-emitting layer having a p-n junction makes use of the superlattice structure being formed of a plurality of BP layers and Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers which are alternately stacked, with the Ga.sub.x Al.sub.1-x N (0.ltoreq.x.ltoreq.1) layers having a zinc blende type structure, or else makes use of a Ga.sub.x Al.sub.y B.sub.1-x-y N.sub.z P.sub.1-z (0.ltoreq.x, y, z.ltoreq.1 and x+y.ltoreq.1) mixed crystal layer having a zinc blende type crystal structure.

摘要翻译： 包括具有pn结的发光层的蓝色LED利用由交替层叠的多个BP层和GaxAl1-xN（0

公开(公告)号：US08963177B2

公开(公告)日：2015-02-24

申请号：US12718492

申请日：2010-03-05

申请人： Hiroshi Katsuno ,  Yasuo Ohba ,  Kei Kaneko ,  Mitsuhiro Kushibe

发明人： Hiroshi Katsuno ,  Yasuo Ohba ,  Kei Kaneko ,  Mitsuhiro Kushibe

IPC分类号： H01L33/50 ,  H01L33/46 ,  H01L33/40 ,  H01L33/60

CPC分类号： H01L33/46 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/504 ,  H01L33/60 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer.

摘要翻译： 一种半导体发光元件，包括：包括n型半导体层，p型半导体层和发光层的层叠结构体; 设置成与p型半导体层接触的p侧电极; 设置成与n型半导体层接触的n侧电极; 与n型半导体层接触而具有比n侧电极的反射率高的反射率的高反射性绝缘层; 以及设置在所述n侧电极的至少一部分上和所述高反射性绝缘层的至少一部分上并与n侧电极电连接的上金属层。 与n型半导体层接触的n侧电极的区域的面积小于夹在n型半导体层和上层金属层之间的高反射性绝缘层的区域的面积。

公开(公告)号：US08329489B2

公开(公告)日：2012-12-11

申请号：US12507539

申请日：2009-07-22

申请人： Yasuo Ohba ,  Kei Kaneko ,  Toru Gotoda ,  Hiroshi Katsuno ,  Mitsuhiro Kushibe

发明人： Yasuo Ohba ,  Kei Kaneko ,  Toru Gotoda ,  Hiroshi Katsuno ,  Mitsuhiro Kushibe

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L2933/0016

摘要： A method for manufacturing a semiconductor light emitting device is provided. The device includes: an n-type semiconductor layer; a p-type semiconductor layer; and a light emitting unit provided between the n-type semiconductor layer and the p-type semiconductor layer. The method includes: forming a buffer layer made of a crystalline AlxGa1-xN (0.8≦x≦1) on a first substrate made of c-plane sapphire and forming a GaN layer on the buffer layer; stacking the n-type semiconductor layer, the light emitting unit, and the p-type semiconductor layer on the GaN layer; and separating the first substrate by irradiating the GaN layer with a laser having a wavelength shorter than a bandgap wavelength of GaN from the first substrate side through the first substrate and the buffer layer.

摘要翻译： 提供一种制造半导体发光器件的方法。 该器件包括：n型半导体层; p型半导体层; 以及设置在n型半导体层和p型半导体层之间的发光单元。 该方法包括：在由c面蓝宝石制成的第一衬底上形成由结晶Al x Ga 1-x N（0.8和n 1; x 1和n 1; 1）制成的缓冲层，并在缓冲层上形成GaN层; 在GaN层上层叠n型半导体层，发光单元和p型半导体层; 以及通过第一衬底和缓冲层从第一衬底侧用具有比GaN的带隙波长短的波长的激光照射GaN层来分离第一衬底。

公开(公告)号：US20110227033A1

公开(公告)日：2011-09-22

申请号：US12876685

申请日：2010-09-07

申请人： Mitsuhiro Kushibe ,  Yasuo Ohba ,  Kei Kaneko ,  Hiroshi Katsuno ,  Shinji Yamada

发明人： Mitsuhiro Kushibe ,  Yasuo Ohba ,  Kei Kaneko ,  Hiroshi Katsuno ,  Shinji Yamada

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Alx1Ga1-x1-y1Iny1N (0

摘要翻译： 根据一个实施例，半导体发光器件包括第一层，第二层和发光部分。 第一层包括n型GaN和n型AlGaN中的至少一种。 第二层包括p型AlGaN。 发光部分具有单个量子阱结构。 单量子阱结构包括第一阻挡层，第二阻挡层和阱层。 第一阻挡层设置在第一层和第二层之间，并且包括Al x Ga 1-x 1-y 1 In y N（0

公开(公告)号：US07964887B2

公开(公告)日：2011-06-21

申请号：US12640174

申请日：2009-12-17

申请人： Yasuo Ohba

发明人： Yasuo Ohba

IPC分类号： H01L33/00

CPC分类号： H01L33/08 ,  H01L27/15 ,  H01L33/32 ,  H01L33/504 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

摘要： A light emitting device includes a transparent substrate having first and second surfaces, a semiconductor layer provided on the first surface, a first light emission layer provided on the semiconductor layer and emitting first ultraviolet light including a wavelength corresponding to an energy larger than a forbidden bandwidth of a semiconductor of the semiconductor layer, a second light emission layer provided between the first light emission layer and the semiconductor layer, absorbing the first ultraviolet light emitted from the first light emission layer, and emitting second ultraviolet light including a wavelength corresponding to an energy smaller than the forbidden bandwidth of the semiconductor of the semiconductor layer, and first and second electrodes provided to apply electric power to the first light emission layer.

摘要翻译： 发光装置包括具有第一表面和第二表面的透明基板，设置在第一表面上的半导体层，设置在半导体层上的第一发光层，并且发射包括对应于大于禁止带宽的能量的波长的第一紫外线 设置在所述第一发光层和所述半导体层之间的第二发光层，吸收从所述第一发光层发射的所述第一紫外线，以及发射包括对应于能量的波长的第二紫外线 小于半导体层的半导体的禁止带宽，以及设置成向第一发光层施加电力的第一和第二电极。