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72 条记录 (耗时 0.055 秒)

    Multi-Step Cu Seed Layer Formation for Improving Sidewall Coverage
    11.
    发明申请
    Multi-Step Cu Seed Layer Formation for Improving Sidewall Coverage 有权
    用于改善侧壁覆盖度的多步Cu种子层形成

    公开(公告)号：US20090209098A1

    公开(公告)日：2009-08-20

    申请号：US12031280

    申请日：2008-02-14

    申请人： Li-Lin Su ,  Shing-Chyang Pan ,  Cheng-Lin Huang ,  Ching-Hua Hsieh

    发明人： Li-Lin Su ,  Shing-Chyang Pan ,  Cheng-Lin Huang ,  Ching-Hua Hsieh

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76873

    摘要： A method of forming an integrated circuit structure includes forming a dielectric layer; forming an opening in the dielectric layer; performing a first deposition step to form a seed layer in a first chamber; and performing a first etch step to remove a portion of the seed layer. The method may further include performing a second deposition step to increase the thickness of the seed layer. At least one of the first etch step and the second deposition step is performed in a second chamber different from the first chamber.

    摘要翻译： 形成集成电路结构的方法包括形成电介质层; 在介电层中形成开口; 执行第一沉积步骤以在第一室中形成种子层; 以及执行第一蚀刻步骤以去除种子层的一部分。 该方法还可以包括执行第二沉积步骤以增加种子层的厚度。 在与第一室不同的第二室中执行第一蚀刻步骤和第二沉积步骤中的至少一个。

    Barrier metal re-distribution process for resistivity reduction
    12.
    发明授权
    Barrier metal re-distribution process for resistivity reduction 失效
    阻隔金属重新分配过程的电阻率降低

    公开(公告)号：US07071095B2

    公开(公告)日：2006-07-04

    申请号：US10850763

    申请日：2004-05-20

    申请人： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Shau-Lin Shue

    发明人： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Shau-Lin Shue

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76865 ,  H01L21/02046 ,  H01L21/2855 ,  H01L21/32131 ,  H01L21/76843 ,  H01L21/76862

    摘要： A novel process for re-distributing a barrier layer deposited on a single damascene, dual damascene or other contact opening structure. The process includes providing a substrate having a contact opening structure and a metal barrier layer deposited in the contact opening structure, re-sputtering the barrier layer by bombarding the barrier layer with argon ions and metal ions, and re-sputtering the barrier layer by bombarding the barrier layer with argon ions.

    摘要翻译： 一种用于重新分布沉积在单个镶嵌，双镶嵌或其他接触开口结构上的阻挡层的新方法。 该方法包括提供具有接触开口结构的衬底和沉积在接触开口结构中的金属阻挡层，通过用氩离子和金属离子轰击阻挡层来重新溅射阻挡层，并通过轰击来重新溅射阻挡层 阻挡层具有氩离子。

    Method for high kinetic energy plasma barrier deposition
    13.
    发明授权
    Method for high kinetic energy plasma barrier deposition 有权
    高动能等离子体屏障沉积方法

    公开(公告)号：US06949472B1

    公开(公告)日：2005-09-27

    申请号：US10838720

    申请日：2004-05-03

    申请人： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Shau-Lin Shue

    发明人： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Shau-Lin Shue

    IPC分类号： H01L21/306 ,  H01L21/31 ,  H01L21/768

    CPC分类号： H01L21/76843 ,  H01L21/02046 ,  H01L21/76862 ,  H01L21/76865

    摘要： A novel method for depositing a barrier layer on a single damascene, dual damascene or other contact opening structure. The method eliminates the need for pre-cleaning argon ion bombardment of the structure, thereby reducing or eliminating damage to the surface of the underlying conductive layer and sputtering of copper particles to the via or other contact opening sidewall. The process includes fabrication of a single damascene, dual damascene or other contact opening structure on a substrate; optionally pre-cleaning the structure typically using nitrogen or hydrogen plasma; depositing a thin metal barrier layer on the sidewalls and bottom of the structure; and redistributing or re-sputtering the barrier layer on the bottom and sidewalls of the structure.

    摘要翻译： 一种用于在单个镶嵌，双镶嵌或其他接触开口结构上沉积阻挡层的新方法。 该方法消除了对结构的氩离子轰击的预清洁的需要，从而减少或消除了下面的导电层的表面的损伤和铜颗粒溅射到通孔或其他接触开口侧壁。 该方法包括在基底上制造单个镶嵌，双镶嵌或其它接触开口结构; 可以任选地预先使用氮或氢等离子体对结构进行预清洗; 在结构的侧壁和底部上沉积薄金属阻挡层; 并且在结构的底部和侧壁上重新分布或重新溅射阻挡层。

    Method for forming composite barrier layer
    18.
    发明申请
    Method for forming composite barrier layer 有权
    形成复合阻挡层的方法

    公开(公告)号：US20090047780A1

    公开(公告)日：2009-02-19

    申请号：US12287516

    申请日：2008-10-10

    申请人： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

    发明人： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  Y10S438/927

    摘要： Provided is a method for forming a composite barrier layer with superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer generally form boundaries with dielectric materials and crystalline layers generally form boundaries with conductive materials such as interconnect materials.

    摘要翻译： 提供了一种形成复合阻挡层的方法，该复合阻挡层具有优异的阻挡性能，并且当复合阻挡层贯穿整个半导体器件时，两种电介质材料和导电材料具有优异的粘合性能。 复合阻挡层可以形成在其设置在两个导电层之间的区域中，并且在其布置在导电层和电介质材料之间的区域中。 复合阻挡层可以由各种多个层组成，并且形成复合阻挡层的层的布置可以随着阻挡层在装置的不同部分延伸而不同。 复合阻挡层的非晶层通常与电介质材料形成边界，并且结晶层通常与诸如互连材料的导电材料形成边界。