公开(公告)号：US6163050A

公开(公告)日：2000-12-19

申请号：US963614

申请日：1997-11-04

申请人： Kiyoshi Hisatomi ,  Yuuichi Mikata ,  Sakae Funo ,  Katsunori Ishihara

发明人： Kiyoshi Hisatomi ,  Yuuichi Mikata ,  Sakae Funo ,  Katsunori Ishihara

IPC分类号： H01L21/28 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

CPC分类号： H01L27/11517 ,  H01L21/28273

摘要： In a silicon substrate, impurity diffusion layers, serving as source and drain regions, are formed to be separated from each other. A gate insulation film is formed on the silicon substrate between these source and drain regions. The gate insulation film is a silicon oxide film containing Cl having concentration of more than 1.times.10.sup.18 atoms/cm.sup.3 and less than 2.times.10.sup.20 atoms/cm.sup.3, and the gate insulation film is formed on the silicon substrate by low-pressure CVD. A gate electrode, formed of a polysilicon layer, is formed on the gate insulation film. An inter-level insulation film is formed on a resultant structure. A contact hole is formed on each of the source and drain regions of the inter-level insulation film. A drain electrode is formed on the inter-level insulation film, and connected to the drain region through the contact hole. A source electrode is formed on the inter-level insulation film, and connected to the source region through the contact hole.

摘要翻译： 在硅衬底中，形成用作源极和漏极区的杂质扩散层彼此分离。 在这些源极和漏极区域之间的硅衬底上形成栅极绝缘膜。 栅极绝缘膜是含有浓度大于1×1018原子/ cm3且小于2×1020原子/ cm3的Cl的氧化硅膜，并且通过低压CVD在硅衬底上形成栅极绝缘膜。 在栅极绝缘膜上形成由多晶硅层形成的栅电极。 在所得结构上形成层间绝缘膜。 在层间绝缘膜的每个源区和漏区上形成一个接触孔。 在层间绝缘膜上形成漏电极，并通过接触孔与漏区连接。 源极电极形成在层间绝缘膜上，并通过接触孔与源极区域连接。

公开(公告)号：US5702531A

公开(公告)日：1997-12-30

申请号：US467525

申请日：1995-06-06

申请人： Yuuichi Mikata

发明人： Yuuichi Mikata

IPC分类号： H01L21/205 ,  C23C16/24 ,  C23C16/46 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/463 ,  C23C16/24 ,  C23C16/46

摘要： A plurality of wafers are placed on a boat, and the boat is inserted into a reactor. The reactor is heated by a heater, thereby heating the inserted wafers. Then, air is supplied between the reactor and the heater through the fan nozzles of a fan unit, thereby cooling the heater quickly at a rate of 17.degree. C./min. PH.sub.3 and SiH.sub.4 gases are introduced into the reactor through first and second gas nozzles, only while the average temperature of a peripheral portion of each wafer remains 30.degree. C. lower than that of a central portion of the same. Thereafter, when the temperature difference between the peripheral and central portions has become lower than 30.degree. C., the supply of PH.sub.3 and SiH.sub.4 gases is stopped. Thus, a polycrystal silicon film is formed on each wafer.

摘要翻译： 将多个晶片放置在船上，并将船插入反应器中。 反应器被加热器加热，从而加热插入的晶片。 然后，通过风扇单元的风扇喷嘴在反应器和加热器之间供应空气，从而以17℃/分钟的速度快速冷却加热器。 PH3和SiH4气体通过第一和第二气体喷嘴引入反应器，只有每个晶片的周边部分的平均温度比其中心部分的平均温度低30℃。 此后，当周边和中心部分之间的温度差已经变得低于30℃时，停止供应PH3和SiH4气体。 因此，在每个晶片上形成多晶硅膜。

公开(公告)号：US5702529A

公开(公告)日：1997-12-30

申请号：US467127

申请日：1995-06-06

申请人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

发明人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/205 ,  H01L21/22 ,  H01L21/223 ,  H01L21/31 ,  H01L21/3215 ,  H01L21/768 ,  C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/452 ,  H01L21/32155 ,  H01L21/76838 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： For providing a doped semiconductor film having a uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas.

摘要翻译： 为了提供在半导体衬底上具有均匀厚度和均匀杂质浓度的掺杂半导体膜，可以制备硅烷等原料气体和磷化氢等杂质气体。 然后，将原料气体引入反应室，将通过分解杂质气体的方法获得的分解杂质气体引入反应室，由此在半导体上沉积多晶硅膜等掺杂半导体膜 基质。 使用副反应室，等离子体放电装置和光源作为分解杂质气体的手段。

公开(公告)号：US5561087A

公开(公告)日：1996-10-01

申请号：US238900

申请日：1994-05-06

申请人： Yuuichi Mikata

发明人： Yuuichi Mikata

IPC分类号： H01L21/205 ,  C23C16/24 ,  C23C16/46 ,  H01L21/31 ,  H01L21/3205

CPC分类号： C23C16/463 ,  C23C16/24 ,  C23C16/46

摘要： A plurality of wafers are placed on a boat, and the boat is inserted into a reactor. The reactor is heated by a heater, thereby heating the inserted wafers. Then, air is supplied between the reactor and the heater through the fan nozzles of a fan unit, thereby cooling the heater quickly at a rate of 17.degree. C./min. PH.sub.3 and SiH.sub.4 gases are introduced into the reactor through first and second gas nozzles, only while the average temperature of a peripheral portion of each wafer remains 30.degree. C. lower than that of a central portion of the same. Thereafter, when the temperature difference between the peripheral and central portions has become lower than 30.degree. C., the supply of PH.sub.3 and SiH.sub.4 gases is stopped. Thus, a polycrystal silicon film is formed on each wafer.

摘要翻译： 将多个晶片放置在船上，并将船插入反应器中。 反应器被加热器加热，从而加热插入的晶片。 然后，通过风扇单元的风扇喷嘴在反应器和加热器之间供应空气，从而以17℃/分钟的速度快速冷却加热器。 PH3和SiH4气体通过第一和第二气体喷嘴引入反应器，只有每个晶片的周边部分的平均温度比其中心部分的平均温度低30℃。 此后，当周边和中心部分之间的温度差已经变得低于30℃时，停止供应PH3和SiH4气体。 因此，在每个晶片上形成多晶硅膜。

公开(公告)号：US5370371A

公开(公告)日：1994-12-06

申请号：US75119

申请日：1993-06-10

申请人： Katsushin Miyagi ,  Shingo Watanabe ,  Yuuichi Mikata ,  Katsuya Okumura

发明人： Katsushin Miyagi ,  Shingo Watanabe ,  Yuuichi Mikata ,  Katsuya Okumura

IPC分类号： H01L21/205 ,  C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  C30B31/12 ,  H01L21/00 ,  H01L21/22 ,  H01L21/324 ,  C21D1/06

CPC分类号： H01L21/67103 ,  C23C16/4583 ,  C23C16/46 ,  C30B25/10 ,  C30B31/12

摘要： A heat treatment apparatus having a heat treatment boat with a plurality of wafers held thereon, which is to be loaded in a reaction vessel which has one end opened. Once loaded, the boat effects a seal of the reaction vessel, in preparation for subjecting the wafers to heat treatment. The boat also has a heat-insulator disposed on its lower end for heat-insulating the interior of the reaction vessel during the heat-treatment. The heat-insulator includes composite plates having a metal film layer on an upper surface for reflecting heat rays generated during the heat treatment of the reaction vessel, and a cylinder enclosing the composite plates. Thus, sufficient heat-insulating effect for the heat treatment can be obtained, and stable heat-treatment can be conducted with the sufficient heat-insulating effect secured. Furthermore, the generation of particles can be suppressed, and yields of the heat treatment can be improved.

摘要翻译： 一种热处理装置，具有保存在其上的多个晶片的热处理舟，其将被装载在一端开放的反应容器中。 一旦加载，船就会对反应容器进行密封，以准备对晶片进行热处理。 该船还具有设置在其下端的绝热体，用于在热处理期间对反应容器的内部进行绝热。 绝热体包括在上表面具有用于反映在反应容器的热处理期间产生的热射线的金属膜层的复合板和封闭复合板的圆筒。 因此，可以获得用于热处理的充分的绝热效果，并且可以在确保足够的绝热效果的情况下进行稳定的热处理。 此外，可以抑制颗粒的产生，并且可以提高热处理的产率。

公开(公告)号：US5250463A

公开(公告)日：1993-10-05

申请号：US719362

申请日：1991-06-24

申请人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

发明人： Yuuichi Mikata ,  Katsunori Ishihara ,  Katsuya Okumura

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/205 ,  H01L21/22 ,  H01L21/223 ,  H01L21/31 ,  H01L21/3215 ,  H01L21/768 ,  H01L21/20

CPC分类号： C23C16/45523 ,  C23C16/452 ,  H01L21/32155 ,  H01L21/76838 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： For providing a doped semiconductor film having uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas.

摘要翻译： 为了提供在半导体衬底上具有均匀厚度和均匀杂质浓度的掺杂半导体膜，可以制备硅烷等原料气体和磷化氢等杂质气体。 然后，将原料气体引入反应室，将通过分解杂质气体的方法获得的分解杂质气体引入反应室，由此在半导体上沉积多晶硅膜等掺杂半导体膜 基质。 使用副反应室，等离子体放电装置和光源作为分解杂质气体的手段。

公开(公告)号：US20070251449A1

公开(公告)日：2007-11-01

申请号：US10574547

申请日：2004-10-01

申请人： Tsuyoshi Mizuno ,  Kimihide Saito ,  Yuuichi Mikata

发明人： Tsuyoshi Mizuno ,  Kimihide Saito ,  Yuuichi Mikata

IPC分类号： H01L21/31 ,  H01L21/30 ,  H01L21/312

CPC分类号： H01L21/02282 ,  G03F7/162 ,  H01L21/312 ,  H01L21/6715

摘要： The object of the present invention is to assuredly merge adjacent coating liquid lines when a coating liquid is applied on a surface of a substrate by a so-called scan coating. The coating is performed while the wafer W is oriented to an orientation such that the scanning direction of the coating nozzle liquid 5 crosses at the dicing lines D formed on the wafer W. After completion of the application, the wafer W is returned to the original orientation and thereafter the wafer W is unloaded from a coating film forming apparatus. The coating film forming apparatus stores a plurality of recipes defining coating conditions for each kind of wafer W. The coating conditions defined by the recipes include the orientation of the wafer W. The orientation of the wafer W is automatically set based on the selected recipe.

摘要翻译： 本发明的目的是通过所谓的扫描涂层将涂布液施加在基板的表面上时，确保合并相邻的涂布液体线。 在将晶片W取向为使得涂布喷嘴液体5的扫描方向与形成在晶片W上的切割线D交叉的取向的同时进行涂布。在施加完成之后，晶片W返回到原稿 然后将晶片W从涂膜形成装置卸载。 涂膜形成装置存储限定每种晶片W的涂布条件的多个配方。由配方限定的涂布条件包括晶片W的取向。基于所选择的配方，晶片W的取向自动设定。

公开(公告)号：US06944572B2

公开(公告)日：2005-09-13

申请号：US10752816

申请日：2004-01-08

申请人： Yukihiro Ushiku ,  Tsunetoshi Arikado ,  Shuichi Samata ,  Takashi Nakao ,  Yuuichi Mikata

发明人： Yukihiro Ushiku ,  Tsunetoshi Arikado ,  Shuichi Samata ,  Takashi Nakao ,  Yuuichi Mikata

IPC分类号： F04D27/00 ,  F04B37/16 ,  F04B49/06 ,  F04B49/10 ,  F04B51/00 ,  G01M13/00 ,  H01L21/00 ,  G06F101/21

CPC分类号： F04B51/00 ,  F04B49/065 ,  F04D19/04 ,  F04D27/001 ,  G01M13/00

摘要： An apparatus for predicting life expectancy of a rotary machine includes: a load recipe input module acquiring loading conditions of a rotary machine; a characterizing feature input module obtaining characterizing feature data of a rotary machine; and a life expectancy prediction module calculating life expectancy of the rotary machine in conformity with the loading conditions and the characterizing feature data.

摘要翻译： 一种用于预测旋转机器的预期寿命的装置包括：负载配方输入模块，其获取旋转机器的负载条件; 特征特征输入模块获得旋转机器的特征特征数据; 以及根据负载条件和特征特征数据计算旋转机器的预期寿命的预期寿命预测模块。

公开(公告)号：US5380370A

公开(公告)日：1995-01-10

申请号：US54229

申请日：1993-04-30

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

公开(公告)号：US5291058A

公开(公告)日：1994-03-01

申请号：US921685

申请日：1992-07-30

申请人： Shuichi Samata ,  Yuuichi Mikata ,  Toshiro Usami

发明人： Shuichi Samata ,  Yuuichi Mikata ,  Toshiro Usami

IPC分类号： H01L21/285 ,  H01L23/532 ,  H01L29/417 ,  H01L29/45 ,  H01L29/34 ,  H01L21/225 ,  H01L23/48 ,  H01L29/46

CPC分类号： H01L21/28525 ,  H01L23/5329 ,  H01L29/41725 ,  H01L29/456 ,  H01L2924/0002

摘要： A semiconductor device with an electrode wiring structure comprises at least one diffused region provided in a semiconductor substrate, a silicon oxide layer covering the substrate surface, a silicon nitride layer provided on the silicon oxide layer, a through-hole reaching the diffused region through the silicon oxide layer from an upper surface of the silicon nitride layer, a silicon semiconductor layer filled in the through-hole and serving as an electrode wiring layer, and an interconnection layer electrically connected to the diffused region through the silicon semiconductor layer. According to the structure, since the silicon oxide layer is covered with the silicon nitride layer, unwanted contaminations such as phosphorus, boron, etc., previously contained in the silicon oxide layer are not added to the silicon semiconductor layer during its growth process. Therefore, the electrode wiring layer of silicon semiconductor having controlled conductivity can be provided.

摘要翻译： 具有电极布线结构的半导体器件包括设置在半导体衬底中的至少一个扩散区域，覆盖衬底表面的氧化硅层，设置在氧化硅层上的氮化硅层，通过所述扩散区域的通孔 从氮化硅层的上表面的氧化硅层，填充在通孔中并用作电极布线层的硅半导体层，以及通过硅半导体层与扩散区电连接的布线层。 根据该结构，由于氧化硅层被氮化硅层覆盖，因此在硅生长过程中，硅氧化物层中预先含有的诸如磷，硼等的不需要的污染物不会添加到硅半导体层。 因此，可以提供具有受控导电性的硅半导体的电极布线层。