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公开(公告)号:US20180179476A1
公开(公告)日:2018-06-28
申请号:US15577145
申请日:2016-05-26
Applicant: TBF ENVIRONMENTAL TECHNOLOGY INC.
Inventor: David Anthony Pasin , Shira Devorah Bogner
CPC classification number: C11D7/5018 , C09D7/20 , C09D9/005 , C09D11/00 , C11D7/5009 , C11D7/5022
Abstract: The present disclosure provides, in part, a solvent composition for use as a heptane replacement. The solvent composition may include a first methylated organosilicon compound, an acetate ester, and either para-Chlorobenzotrifluoride (PCBTF) or a second methylated organosilicon compound or both.
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公开(公告)号:US20180141090A1
公开(公告)日:2018-05-24
申请号:US15570855
申请日:2016-05-09
Applicant: ZEON CORPORATION
Inventor: Keiji ANDO , Noriyasu OTSUKI
CPC classification number: B08B3/10 , B08B3/08 , B08B2220/04 , C08J11/06 , C08J11/20 , C09D9/00 , C09D9/005 , C11D7/261 , C11D7/30 , C11D7/5018 , C11D7/5022 , C11D7/5081
Abstract: A release solvent composition for releasing a thermosetting resin coating film coated on a thermoplastic resin molded article, and the release solvent composition containing 1,1,2,2,3,3,4-heptafluorocyclopentane and aromatic alcohols and having no flash point.
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公开(公告)号:US09944890B2
公开(公告)日:2018-04-17
申请号:US15028137
申请日:2013-11-11
Applicant: Halliburton Energy Services, Inc.
Inventor: Philip Nguyen , Loan K. Vo
IPC: E21B37/00 , E21B37/06 , E21B37/08 , C09K8/035 , C09K8/524 , C11D3/20 , C11D3/26 , C11D3/28 , C11D3/43 , C11D11/00 , B08B3/08 , C11D7/06 , C11D7/26 , C11D7/50 , C09K8/56 , E21B41/00 , E21B43/16 , E21B43/267
CPC classification number: C11D11/0041 , B08B3/08 , C09K8/524 , C09K8/56 , C11D7/06 , C11D7/265 , C11D7/5013 , C11D7/5022 , E21B41/00 , E21B43/16 , E21B43/267
Abstract: Methods and compositions are provided for removing a residue of resin from the surface of equipment. In one embodiment, the methods comprise: providing a cleaning solution comprising a pH-adjusting agent, a chemical solvent, and water, wherein the chemical solvent is selected from the group consisting of β-lactam, γ-lactam, δ-lactam, ϵ-lactam, 2-pyrrolidone, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone (DMI), caprolactam, cyclohexanone, cyclopentanone, β-butyrolactone, γ-butyrolactone, δ-decalactone, γ-valerolactone, ϵ-caprolactone, butylene carbonate, propylene carbonate, and ethylene carbonate, any combination thereof, and any derivative thereof; allowing the cleaning solution to contact a surface at least partially coated with a layer of resin; and allowing the cleaning solution to at least partially dissolve the resin.
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公开(公告)号:US09920286B2
公开(公告)日:2018-03-20
申请号:US15084295
申请日:2016-03-29
Applicant: TOKYO OHKA KOGYO CO., LTD.
Inventor: Tomoya Kumagai , Takahiro Eto
CPC classification number: C11D7/5022 , B08B3/08 , C11D7/08 , C11D7/263 , C11D7/3209 , C11D7/5009 , G03F7/423 , G03F7/425 , H01L21/0206 , H01L21/02063 , H01L21/02068
Abstract: A cleaning liquid for lithography, and a method for forming a wiring using the cleaning liquid for lithography. The cleaning liquid for includes an alkali or an acid, a solvent, and a silicon compound generating a silanol group through hydrolysis. The method forms a metal wiring layer by embedding a metal in an etching space formed in a low dielectric constant layer of a semiconductor multilayer laminate. In this method, the semiconductor multilayer laminate is cleaned using the cleaning liquid for lithography, after formation of the etching space.
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公开(公告)号:US09914902B2
公开(公告)日:2018-03-13
申请号:US14979787
申请日:2015-12-28
Applicant: Fujifilm Electronic Materials U.S.A., Inc.
Inventor: Bing Du , Thomas Dory , William A. Wojtczak
IPC: C11D7/50 , C11D11/00 , C11D7/32 , C11D3/43 , C11D3/30 , H01L21/311 , C11D3/00 , C11D3/20 , C11D3/28 , C11D7/26 , G03F7/42
CPC classification number: C11D11/0047 , C11D3/0026 , C11D3/2006 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/261 , C11D7/3209 , C11D7/3281 , C11D7/5009 , C11D7/5013 , C11D7/5022 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/31133
Abstract: This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant.
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公开(公告)号:US09815097B2
公开(公告)日:2017-11-14
申请号:US14344470
申请日:2012-09-13
Applicant: Jamie J. Juliette , Philippe P. Maillot , Joy L. Mendoza
Inventor: Jamie J. Juliette , Philippe P. Maillot , Joy L. Mendoza
IPC: B08B9/00 , B08B9/08 , B08B9/093 , C11D7/50 , B08B3/00 , B08B3/02 , B08B3/04 , B08B9/02 , B08B9/027
CPC classification number: B08B9/08 , B08B3/00 , B08B3/02 , B08B3/04 , B08B9/00 , B08B9/02 , B08B9/027 , B08B9/0804 , B08B9/0808 , B08B9/0813 , B08B9/0817 , B08B9/0933 , C11D7/5022
Abstract: Provided is a method for removing deposited solid residue from equipment used in the processing of (meth)acrylic acid or esters, including the steps of dissolving the solid residue in a cleaning solution comprising an organic carboxylic acid to produce a solid residue slurry; and removing the solid residue slurry from the equipment.
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公开(公告)号:US20170306272A1
公开(公告)日:2017-10-26
申请号:US15488786
申请日:2017-04-17
Applicant: Shin-Etsu Chemical Co., Ltd.
Inventor: Masaya Ueno , Hideyoshi Yanagisawa
CPC classification number: C11D11/0047 , C08G77/16 , C09J183/04 , C11D7/261 , C11D7/3209 , C11D7/5004 , C11D7/5022 , C11D7/5027 , H01L21/02013 , H01L21/02057 , H01L21/0209 , H01L21/31111 , H01L21/31133 , H01L21/6835 , H01L2221/68327 , H01L2221/68381 , C08L83/00
Abstract: A cleaner composition consisting essentially of (A) 92.0 wt % to less than 99.9 wt % of an organic solvent, (B) 0.1 wt % to less than 8.0 wt % of a C3-C6 alcohol, and (C) 0.001-3.0 wt % of a quaternary ammonium salt is effective for removing any silicone adhesive residues on a silicon semiconductor substrate. A satisfactory degree of cleanness is achieved within a short time and at a high efficiency without causing corrosion to the substrate.
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公开(公告)号:US09790457B2
公开(公告)日:2017-10-17
申请号:US15374075
申请日:2016-12-09
Applicant: HONEYWELL INTERNATIONAL INC.
Inventor: Ryan Hulse , Kane D Cook
IPC: B08B3/00 , C11D11/00 , C11D7/50 , C11D3/24 , C11D7/30 , B08B3/02 , B08B3/08 , B08B5/00 , B08B3/04
CPC classification number: C11D11/0041 , B08B3/00 , B08B3/02 , B08B3/04 , B08B3/08 , B08B5/00 , C11D3/245 , C11D7/30 , C11D7/5018 , C11D7/5022 , C11D11/0029 , C23G5/02809 , C23G5/02825
Abstract: The present invention relates, in part, to cleaning methods and solvent cleaning compositions including at least one hydrofluoro-olefin or hydrochlorofluoro-olefin solvent for use in connection with cleaning of metal parts, and in certain preferred embodiments cleaning metal parts to be used in an aircraft.
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公开(公告)号:US20170216171A1
公开(公告)日:2017-08-03
申请号:US15494183
申请日:2017-04-21
Applicant: Dupont Tate & Lyle Bio Products Company, LLC
Inventor: Ann Wehner , Gyorgyi Fenyvesi , Carl F. Muska , Joseph W. DeSalvo , Melissa Joerger , Robert Miller , Irwin A. Palefsky , Raja Hari Poladi
IPC: A61K8/34 , A61Q17/04 , A61K47/10 , A61Q17/00 , A61Q5/12 , A61Q19/10 , A61Q15/00 , A61Q1/02 , A61Q5/02 , A61Q1/14 , A61Q1/10 , A61Q1/08 , A61Q5/06 , A61Q9/02 , C09K3/18 , C09D7/12 , A01N25/02 , C09D11/03 , C09D11/38 , A01N3/00 , C09D11/16 , C08K5/053 , A01N1/02 , C11D3/20 , C11D11/00 , C09K5/10 , C10M129/08 , A21D2/14 , A23B7/154 , A23K20/105 , A23L2/52 , A23L3/3463 , A23L29/10 , A23L33/10 , C02F5/10 , A61Q19/00
CPC classification number: A61K8/345 , A01N1/021 , A01N3/00 , A01N25/02 , A21D2/14 , A23B7/154 , A23K20/105 , A23L2/52 , A23L3/3463 , A23L29/035 , A23L29/04 , A23L29/10 , A23L33/10 , A23L33/12 , A23V2002/00 , A61K8/0208 , A61K8/375 , A61K8/92 , A61K9/0019 , A61K9/06 , A61K9/282 , A61K31/22 , A61K36/02 , A61K36/185 , A61K36/28 , A61K36/355 , A61K36/61 , A61K36/738 , A61K47/10 , A61K47/14 , A61K47/44 , A61K2800/10 , A61K2800/75 , A61Q1/02 , A61Q1/08 , A61Q1/10 , A61Q1/14 , A61Q5/00 , A61Q5/02 , A61Q5/065 , A61Q5/10 , A61Q5/12 , A61Q9/02 , A61Q9/04 , A61Q11/00 , A61Q13/00 , A61Q15/00 , A61Q17/00 , A61Q17/005 , A61Q17/04 , A61Q19/00 , A61Q19/002 , A61Q19/005 , A61Q19/007 , A61Q19/008 , A61Q19/04 , A61Q19/10 , B01D11/0288 , C02F5/10 , C07C67/08 , C07C69/16 , C07C69/28 , C07C69/44 , C07C69/58 , C07C69/60 , C07C69/78 , C08K5/053 , C08K5/103 , C08K2201/018 , C09D7/63 , C09D11/03 , C09D11/16 , C09D11/38 , C09G1/08 , C09K3/18 , C09K3/185 , C09K5/10 , C09K5/20 , C10M129/08 , C10M2207/022 , C10M2207/04 , C10M2207/283 , C10M2209/086 , C10M2215/042 , C10M2215/223 , C10M2229/0425 , C10N2230/64 , C10N2240/08 , C11C3/003 , C11D1/667 , C11D3/2003 , C11D3/2044 , C11D3/2068 , C11D3/2093 , C11D3/3418 , C11D3/38663 , C11D7/266 , C11D7/5022 , C11D11/0017 , C11D11/0023 , C12P7/18 , C12P7/42 , C12P7/62 , Y02W10/37 , C08L67/04
Abstract: Disclosed herein are biodegradable compositions comprising 1,3-propanediol, wherein the 1,3-propanediol in said biodegradable composition has a bio-based carbon content of about 1% to 100%. In addition, it is preferred that the 1,3-propanediol be biologically-derived, and wherein upon biodegradation, the biologically-derived 1,3-propanediol contributes no anthropogenic CO2 emissions to the atmosphere.
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公开(公告)号:US20170200619A1
公开(公告)日:2017-07-13
申请号:US15316358
申请日:2015-06-02
Applicant: ENTEGRIS, INC.
Inventor: Emanuel I. COOPER , Steven LIPPY , Lingyan SONG
IPC: H01L21/311 , H01L21/027 , C09K13/08 , C09K13/10 , C11D11/00 , C11D7/50 , C11D7/08 , C11D7/28 , C11D7/36 , C11D7/34 , C11D7/26 , C11D7/32 , C11D7/22 , C11D7/14 , H01L21/02
CPC classification number: H01L21/31133 , C09K13/08 , C09K13/10 , C11D7/08 , C11D7/14 , C11D7/22 , C11D7/265 , C11D7/28 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D7/36 , C11D7/5022 , C11D11/0047 , C23F1/26 , H01L21/02063 , H01L21/02071 , H01L21/0276 , H01L21/31111
Abstract: A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.
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