公开(公告)号：US08728947B2

公开(公告)日：2014-05-20

申请号：US13492094

申请日：2012-06-08

Applicant: Christopher K Olsen ,  Luis Fernandez

Inventor： Christopher K Olsen ,  Luis Fernandez

IPC: H01L21/66 ,  H01L21/302 ,  H01L21/00

CPC classification number: H01L21/76831 ,  H01J37/304 ,  H01J2237/0812 ,  H01J2237/3174 ,  H01L21/31116 ,  H01L21/32137 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for opening a conformal layer at the bottom of a contact via on a substrate is described. The method includes providing a substrate having a first layer with a via pattern formed therein and a second layer conformally deposited on the first layer and within the via pattern to establish a contact via pattern characterized by an initial mid-critical dimension (CD). The method further includes etching through the second layer at the bottom of the contact via pattern to extend the contact via pattern through the second layer and form a contact via while retaining at least part of the second layer on the top surface of the first layer, the corner at the entrance to the via pattern, and the sidewalls of the via pattern, wherein the etching is performed by irradiating the substrate with a gas cluster ion beam (GCIB) according to a GCIB etching process.

Abstract translation: 描述了在基板上的接触通孔的底部打开保形层的方法。 该方法包括提供具有其中形成有通孔图案的第一层的第一层和保形地沉积在第一层上和通孔图案内的第二层，以建立以初始中间临界尺寸（CD）为特征的接触通孔图案。 该方法还包括蚀刻穿过接触通孔图案底部的第二层，以通过图案延伸穿过第二层并且形成接触通孔，同时将第二层的至少一部分保留在第一层的顶表面上， 通孔图案的入口处的拐角和通孔图案的侧壁，其中通过根据GCIB蚀刻工艺用气体簇离子束（GCIB）照射衬底来进行蚀刻。

公开(公告)号：US20130213933A1

公开(公告)日：2013-08-22

申请号：US13590405

申请日：2012-08-21

Applicant: Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

Inventor： Sean R. Kirkpatrick ,  Allen R. Kirkpatrick

IPC: G01N23/00

CPC classification number: G01N23/00 ,  G01N23/225 ,  H01J37/08 ,  H01J37/305 ,  H01J2237/0041 ,  H01J2237/0812 ,  H01J2237/3151

Abstract: Apparatus and methods are disclosed for employing an accelerated neutral beam derived from an accelerated gas cluster ion beam as a physical etching beam for providing reduced material mixing at the etched surface, compared to previous techniques. This results in the ability to achieve improved depth profile resolution in measurements by analytical instruments such as SIMS and XPS (or ESCA) analytical instruments.

Abstract translation: 公开了用于采用从加速气体团簇离子束衍生的加速中性束作为物理蚀刻光束的设备和方法，用于在蚀刻表面提供减少的材料混合，与先前的技术相比。 这样就可以通过SIMS和XPS（或ESCA）分析仪器等分析仪器在测量中实现改进的深度分布分辨率。

公开(公告)号：US20130180844A1

公开(公告)日：2013-07-18

申请号：US13823499

申请日：2011-10-10

Applicant: Bryan Barnard

Inventor： Bryan Barnard

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J27/026 ,  H01J37/05 ,  H01J37/3171 ,  H01J49/142 ,  H01J2237/057 ,  H01J2237/0812 ,  H01J2237/0827

Abstract: A method of processing one or more surfaces is provided, comprising: providing a switchable ion gun which is switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters for irradiating a surface and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms for irradiating a surface; and selectively operating the ion gun in the cluster mode by mass selecting ionised gas clusters using a variable mass selector thereby irradiating a surface substantially with ionised gas clusters or the atomic mode by mass selecting ionised gas atoms using a variable mass selector thereby irradiating a surface substantially with ionised gas atoms. Also provided is a switchable ion gun comprising: a gas expansion nozzle for producing gas clusters; an ionisation chamber for ionising the gas clusters and gas atoms; and a variable (preferably a magnetic sector) mass selector for mass selecting the ionised gas clusters and ionised gas atoms to produce an ion beam variable between substantially comprising ionised gas clusters and substantially comprising ionised gas atoms. Preferably, the gun comprises an electrically floating flight tube for adjusting the energy of the ions whilst within the mass selector.

Abstract translation: 提供一种处理一个或多个表面的方法，包括：提供可切换离子枪，其可在用于产生基本上包括用于照射表面的电离气体簇的离子束的簇模式设置和用于产生离子束的原子模式设置之间切换 基本上包括用于照射表面的电离气体原子; 并且通过使用可变质量选择器质量选择电离气体簇来选择性地操作离子枪，从而通过使用可变质量选择器大量选择电离气体原子而基本上用电离气体簇或原子模式照射表面，从而基本上照射表面 具有电离气体原子。 还提供了一种可切换离子枪，包括：用于产生气体团的气体膨胀喷嘴; 用于电离气团和气原子的电离室; 以及用于质量选择电离气体团簇和电离气体原子以产生基本上包含电离气体簇并且基本上包含电离气体原子的离子束可变的变量（优选磁性扇区）质量选择器。 优选地，枪包括电浮动飞行管，用于在质量选择器内调节离子的能量。

公开(公告)号：US08481981B2

公开(公告)日：2013-07-09

申请号：US12312203

申请日：2007-10-30

Applicant: Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

Inventor： Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

IPC: G21K5/04

CPC classification number: H01L21/3065 ,  H01J2237/0812 ,  H01J2237/202 ,  H01J2237/3151

Abstract: Surface roughness having intervals of several tens of nanometers to about a hundred micrometers in a solid surface is reduced by directing a gas cluster ion beam to the surface. An angle formed between the normal to the solid surface and the gas cluster ion beam is referred to as an irradiation angle, and an irradiation angle at which the distance of interaction between the solid and the cluster colliding with the solid dramatically increases is referred to as a critical angle. A solid surface smoothing method includes an irradiation step of directing the gas cluster ion beam onto the solid surface at an irradiation angle not smaller than the critical angle. The critical angle is 70°.

Abstract translation: 通过将气体团簇离子束引导到表面，在固体表面中具有数十纳米至约百微米间隔的表面粗糙度被减小。 被称为固体表面和气体团簇离子束的法线之间的角度被称为照射角度，并且固体和团簇与固体之间的相互作用距离急剧增加的照射角度被称为 一个临界角。 固体表面平滑化方法包括将气体团簇离子束以不小于临界角的照射角度引导到固体表面的照射步骤。 临界角为70°。

公开(公告)号：US08460843B2

公开(公告)日：2013-06-11

申请号：US13177910

申请日：2011-07-07

Applicant: Koji Otsuka ,  Kenji Okamura

Inventor： Koji Otsuka ,  Kenji Okamura

IPC: G03F1/22 ,  B32B17/06

CPC classification number: G01B9/02065 ,  C03C15/02 ,  C03C19/00 ,  C03C23/006 ,  C03C2204/08 ,  G01B9/02057 ,  G01B9/0209 ,  G01B11/30 ,  G03F1/60 ,  H01J2237/0812 ,  Y10T428/24355

Abstract: A glass substrate obtained by a method including measuring flatness of a glass substrate surface and measuring concentration distribution of dopant in the substrate. Processing conditions of the surface are set up for each site of the substrate based on results from the measuring the flatness and the measuring the distribution, and the finishing is carried out while keeping an angle formed by normal line of the substrate and incident beam onto the surface at from 30 to 89°. The surface is subjected to second finishing for improving an RMS in a high spatial frequency region. The surface after the second finishing satisfies the requirements: an RMS slope in the region that 5 μm

Abstract translation: 一种玻璃基板，其通过包括测量玻璃基板表面的平坦度和测量基板中掺杂剂的浓度分布的方法获得。 基于测量平面度和测量分布的结果，为基板的每个部位设置表面的加工条件，并且在将基板和入射光束的法线形成的角度保持在 表面为30〜89°。 对表面进行第二次精加工以改善高空间频率区域中的均方根。 第二次完成后的表面满足以下要求：在5μm（λ（空间波长）<1mm的区域中的RMS斜率不大于0.5mRad，在250nm <空间波长的区域中的RMS斜率） <5 mum不超过0.6 mRad。

公开(公告)号：US08385814B2

公开(公告)日：2013-02-26

申请号：US12772471

申请日：2010-05-03

Applicant: Glenn Norman Sanders ,  Howard Glenn Stark

Inventor： Glenn Norman Sanders ,  Howard Glenn Stark

IPC: H04H40/00 ,  H04H20/71 ,  H04B7/00 ,  H04B1/06

CPC classification number: G06F17/3074 ,  A61B2017/00969 ,  A61F2/0077 ,  A61F2/30767 ,  B29C59/16 ,  B29C2035/0872 ,  D06M10/00 ,  D06M10/008 ,  D06M10/04 ,  G08C25/02 ,  H01J2237/0812 ,  H01J2237/2505 ,  Y10T442/60

Abstract: Disclosed are systems and methods for wirelessly recording multi-track audio files without the data corruption or loss of data that typically occurs with wireless data transmission. In some aspects of the present invention, each performer is equipped with a local audio device capable of locally recording the respective performer's audio while also transmitting it to a master recorder. The locally recorded audio may then be used to repair or replace any audio lost or corrupted during transmission to the master recorder. Such repair or replacement may be performed electronically or via playback of the locally recorded audio. In other aspects of the present invention, a master recorder is not required since all locally recorded audio may be combined or otherwise processed post-recording. Locally recorded audio may include identifiers to aid in post-recording identification of such audio. A multi-memory unit is also provided to facilitate manipulation and processing of audio files.

Abstract translation: 公开了用于无数据记录多轨音频文件的系统和方法，而没有数据损坏或通常在无线数据传输时出现的数据丢失。 在本发明的一些方面，每个执行者配备有本地音频设备，其能够本地记录相应的演奏者的音频，同时也将其发送到主记录器。 然后可以使用本地记录的音频来修复或替换在传送到主记录器期间丢失或损坏的任何音频。 这种修复或替换可以电子地或通过本地记录的音频的重放进行。 在本发明的其他方面，不需要主记录器，因为所有本地记录的音频可以被组合或以其他方式处理后记录。 本地记录的音频可以包括用于辅助记录这种音频的识别的标识符。 还提供了多存储器单元以便于音频文件的操纵和处理。

公开(公告)号：US08368309B2

公开(公告)日：2013-02-05

申请号：US11648269

申请日：2006-12-29

Applicant: Thomas N. Horsky ,  Robert W. Milgate, III ,  George P. Sacco, Jr. ,  Dale Conrad Jacobson ,  Wade Allen Krull

Inventor： Thomas N. Horsky ,  Robert W. Milgate, III ,  George P. Sacco, Jr. ,  Dale Conrad Jacobson ,  Wade Allen Krull

IPC: H01J7/24 ,  H01J27/00

CPC classification number: H01J37/08 ,  C23C14/48 ,  C23C14/564 ,  H01J9/38 ,  H01J27/024 ,  H01J37/3171 ,  H01J2209/017 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/0812 ,  H01J2237/083 ,  H01J2237/31701 ,  H01L21/265

Abstract: Thermal control is provided for an extraction electrode of an ion-beam producing system that prevents formation of deposits and unstable operation and enables use with ions produced from condensable vapors and with ion sources capable of cold and hot operation. Electrical heating of the extraction electrode is employed for extracting decaborane or octadecaborane ions. Active cooling during use with a hot ion source prevents electrode destruction, permitting the extraction electrode to be of heat-conductive and fluorine-resistant aluminum composition.

Abstract translation: 为离子束产生系统的提取电极提供热控制，其防止沉积物的形成和不稳定的操作，并且能够与可冷凝蒸气和能够冷热操作的离子源产生的离子一起使用。 提取电极的电加热用于提取十硼烷或十八硼烷离子。 使用热离子源时的主动冷却可防止电极破坏，从而使引出电极具有导热和防氟的铝组成。

公开(公告)号：US08313663B2

公开(公告)日：2012-11-20

申请号：US12237063

申请日：2008-09-24

Applicant: John J. Hautala

Inventor： John J. Hautala

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: B44C1/227 ,  H01J2237/0812 ,  H01L21/02019

Abstract: A method of treating a workpiece is described. The method comprises selectively forming a sacrificial material on one or more regions of a substrate or a layer on the substrate using a gas cluster ion beam (GCIB), and adjusting a surface profile of a surface on the substrate or the layer on the substrate by performing an etching process following the selective formation.

Abstract translation: 描述了一种处理工件的方法。 该方法包括使用气体簇离子束（GCIB）在衬底或衬底上的层的一个或多个区域上选择性地形成牺牲材料，并通过以下方式调整衬底或衬底上的表面的表面轮廓： 在选择性形成之后执行蚀刻工艺。

公开(公告)号：US08187971B2

公开(公告)日：2012-05-29

申请号：US12873573

申请日：2010-09-01

Applicant: Noel Russell ,  John J. Hautala ,  John Gumpher

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/20

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

Abstract translation: 对半导体装置的制造方法进行说明。 该方法包括在形成硅化物区域期间对含硅衬底的至少一部分进行气体簇离子束（GCIB）的预处理和/或后处理。

公开(公告)号：US08173980B2

公开(公告)日：2012-05-08

申请号：US12774050

申请日：2010-05-05

Applicant: Michael Graf ,  Andrej Mitrovic

Inventor： Michael Graf ,  Andrej Mitrovic

IPC: A61N5/00

CPC classification number: H01J37/3002 ,  H01J2237/022 ,  H01J2237/0812 ,  H01J2237/0825 ,  H01J2237/0827 ,  H01J2237/3142 ,  H01J2237/3151

Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a vacuum vessel that has an interior and is configured to support the substrate therein, and at least one nozzle for forming and emitting a gas cluster beam. The at least one nozzle is configured to direct the gas cluster beam within the vacuum vessel toward the substrate. An ionizer is positioned to ionize the gas cluster beam to form the GCIB. A main gas supply of the system is in fluid communication with the at least one nozzle for supplying gas to the nozzle. The system also includes a plasma-generating apparatus that communicates with the interior of the vacuum vessel and which is configured to receive a cleaning gas and selectively emit plasma for cleaning the interior of the vacuum vessel.

Abstract translation: 提供了用气体簇离子束（GCIB）照射衬底的处理系统。 该系统包括具有内部并被配置为支撑其中的基板的真空容器，以及用于形成和发射气体束束的至少一个喷嘴。 至少一个喷嘴构造成将真空容器内的气体束束引向衬底。 定位电离器以离子化气体束束以形成GCIB。 系统的主要气体供应与至少一个用于向喷嘴供应气体的喷嘴流体连通。 该系统还包括等离子体发生装置，其与真空容器的内部连通，并被配置为接收清洁气体并选择性地发射等离子体以清洁真空容器的内部。