公开(公告)号：US20120047474A1

公开(公告)日：2012-02-23

申请号：US13192124

申请日：2011-07-27

Applicant: Jin Choi ,  Sang-hee Lee ,  Seong-june Min

Inventor： Jin Choi ,  Sang-hee Lee ,  Seong-june Min

IPC: G06F17/50

CPC classification number: G03F1/78 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method of manufacturing semiconductor devices is disclosed. The method includes determining fractured shots that do not overlap each other based on a final pattern; determining overlapping shots that are shots that overlap each other based on the final pattern; generating area difference data by comparing the areas of the overlapping shots and the fractured shots with each other; calculating a radiation influenced pattern based on the area difference data; and correcting the overlapping shots based on the radiation influenced pattern.

Abstract translation: 公开了制造半导体器件的方法。 该方法包括基于最终模式确定彼此不重叠的断裂射击; 确定基于最终模式重叠的重叠拍摄; 通过比较重叠射击和断裂射击的面积来产生区域差异数据; 基于面积差异数据计算辐射影响模式; 并基于辐射影响模式校正重叠拍摄。

公开(公告)号：US06894435B2

公开(公告)日：2005-05-17

申请号：US10289882

申请日：2002-11-06

Applicant: David Aviel ,  Jimmy Vishnipolsky ,  Radel Ben-Av

Inventor： David Aviel ,  Jimmy Vishnipolsky ,  Radel Ben-Av

IPC: G03F7/00 ,  G09G3/10 ,  G21G5/00 ,  H01J37/302 ,  H01J37/317 ,  H05B37/00

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31766 ,  H01J2237/31767 ,  H01J2237/31771 ,  H01J2237/31774

Abstract: A method for scanning a specimen 105 with beams 102 of charged particles of a source group. Thereby, a plurality of target points 402 is scanned with a charged particle beam emitted by a source 106 and the same plurality of target points is scanned with at least one further charged particle beam emitted by at least one further source. Further, the charged particle beams from the source and the at least one further source are emitted on the same target point at different times. Additionally, a multiple charged particle beam source and a data feed system are provided. A source array 104 comprises at least one logical emitting unit 106, wherein patterning information is shifted in a shift circuit 140, and redundancy emitting units 106, wherein individual redundancy emitting units obtain patterning information from the shift register.

Abstract translation: 用于用源组的带电粒子的束102扫描试样105的方法。 因此，用源106发射的带电粒子束扫描多个目标点402，并且用至少一个另外的源发射的至少一个另外带电的粒子束扫描相同的多个目标点。 此外，来自源极和至少一个另外的源的带电粒子束在不同时间被发射在相同的目标点上。 另外，提供多重带电粒子束源和数据馈送系统。 源阵列104包括至少一个逻辑发射单元106，其中图形化信息在移位电路140中移位，以及冗余发射单元106，其中各个冗余发射单元从移位寄存器获得图形信息。

公开(公告)号：US20030148220A1

公开(公告)日：2003-08-07

申请号：US10367705

申请日：2003-02-19

Inventor： Seung-Hune Yang

IPC: G03C005/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/26 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/31771 ,  Y10S430/143

Abstract: A technique of exposing a resist with electron beams having different accelerating voltages is used in a method for manufacturing a photomask. In a first exposing step, an electron beam resist on a substrate is exposed with an electron beam having an accelerating voltage low enough to keep the electron beam resist from developing. In a second exposing step, the electron beam resist is exposed with an electron beam having a higher accelerating voltage. Through the first and second exposing steps, the electron beam resist absorbs an amount of energy greater than the threshold energy, i.e., enough energy to allow the photoresist to be developed. This technique is applied to a resist coating at least one of an opaque layer and a phase shift film form on a transparent substrate. After the resist is developed, the opaque layer and/or phase shift film is etched using the patterned resist as an etching mask. The technique can also be applied to the forming of test patterns used in producing data by which the dosages of the electron beams used to manufacture the photomask are selected. The use of the two electron beams in exposing the resist facilitates the production of a pattern having a high degree of resolution in a short amount of time.

公开(公告)号：US5700604A

公开(公告)日：1997-12-23

申请号：US607315

申请日：1996-02-26

Applicant: Teruaki Okino

Inventor： Teruaki Okino

IPC: G03F1/20 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  G03F9/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F7/2037 ,  H01J37/3174 ,  H01J2237/31771

Abstract: A charged particle beam exposure method capable of suppressing the degradation of dimensional accuracy of exposed pattern elements due to the proximity effect and Coulomb effect defocusing. The charged particle beam exposure method is a method in which a charged particle beam is irradiated to a mask to transfer an image of a pattern formed on the mask onto a radiation-sensitive substrate. The method includes dividing one exposed pattern element which is to be formed on the radiation-sensitive substrate into a plurality of regions including a region lying at a marginal portion of the exposed pattern element and at least one other region lying inside the marginal portion, and forming patterns respectively corresponding to the regions on the mask, and further adjusting, when the patterns are to be transferred onto the radiation-sensitive substrate, the transfer positions of images of the patterns corresponding to the regions so that the divided regions are combined together to form the exposed pattern element on the radiation-sensitive substrate.

Abstract translation: 一种能够抑制由于邻近效应和库仑效应散焦引起的曝光图案元件的尺寸精度劣化的带电粒子束曝光方法。 带电粒子束曝光方法是将带电粒子束照射到掩模以将形成在掩模上的图案的图像转印到辐射敏感基板上的方法。 该方法包括将要形成在辐射敏感衬底上的一个暴露图案元件划分成多个区域，该多个区域包括位于暴露图案元件的边缘部分的区域和位于边缘部分内的至少一个其它区域，以及 形成分别对应于掩模上的区域的图案，并且当将图案转印到辐射敏感基板上时，进一步调整与区域对应的图案的图像的转印位置，使得分割的区域被组合在一起 在辐射敏感衬底上形成曝光图案元件。

公开(公告)号：US4717644A

公开(公告)日：1988-01-05

申请号：US451682

申请日：1982-12-20

Applicant: Fletcher Jones ,  Henry R. Voelker

Inventor： Fletcher Jones ,  Henry R. Voelker

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  G03C5/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/7045 ,  H01J37/3174 ,  H01J2237/31771 ,  Y10S430/143

Abstract: A complete lithographic exposure pattern is formed in accordance with this invention by forming part of the complete pattern with electron beam radiation and forming the remaining part with light radiation. The electron beam exposure pattern part delineates all of the edges of the desired complete pattern while the optical exposure pattern part fills in any remaining regions, together forming the desired complete exposure pattern. Since all edges are delineated by electron beam radiation, any radiation sensitive layer exposed to the complete pattern will develop edges characteristic of an electron beam pattern exposure.Electron beam exposure system thruput is improved because the whole pattern is not exposed by electron beam. Preferably, the exposure width of the electron beam edge delineation is on the order of the minimum linewidth of the pattern, so that proximity effects will be automatically reduced or eliminated without requiring computation of the exposure contribution from adjacent shapes in the pattern due to lateral scattering effects and without requiring any variation in the applied electron beam exposure dose. Use of a wider exposure width for electron beam delineation of pattern edges has the advantage that alignment tolerance of the optical exposure pattern part with respect to the electron beam exposure pattern part is increased.

Abstract translation: 通过用电子束辐射形成完整图案的一部分并用光辐射形成剩余部分，根据本发明形成完整的光刻曝光图案。 电子束曝光图案部分描绘出期望的完整图案的所有边缘，同时光学曝光图案部分填充任何剩余的区域，一起形成期​​望的完全曝光图案。 由于所有边缘都被电子束辐射描绘，任何暴露于完整图案的辐射敏感层都会形成电子束图案曝光的特征。 由于整个图案不被电子束曝光，因此改善了电子束曝光系统的冲击。 优选地，电子束边缘描绘的曝光宽度是图案的最小线宽的数量级，使得邻近效应将被自动地减少或消除，而不需要计算由于横向散射在图案中的相邻形状的曝光贡献 并且不需要施加的电子束曝光剂量的任何变化。 对于图案边缘的电子束描绘使用更宽的曝光宽度具有增加光学曝光图案部分相对于电子束曝光图案部分的对准公差的优点。

公开(公告)号：US4644170A

公开(公告)日：1987-02-17

申请号：US810848

申请日：1985-12-20

Applicant: Fumio Komatsu

Inventor： Fumio Komatsu

IPC: G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  H01J37/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  H01J37/3174 ,  H01L21/30 ,  H01J2237/31769 ,  H01J2237/31771

Abstract: A method of electron beam exposure comprising selectively exposing a resist film on a substrate a plurality of times with an electron beam whose dose is lower than a desired dose sufficient to produce a difference in molecular weight between the exposed area and the nonexposed area, the cumulative dose corresponding to said desired dose.

Abstract translation: 一种电子束曝光方法，包括使用剂量低于足以产生曝光区域和未曝光区域之间的分子量差异的电子束，多次对衬底上的抗蚀剂膜进行多次曝光，累积 对应于所述期望剂量的剂量。

公开(公告)号：US4298803A

公开(公告)日：1981-11-03

申请号：US112464

申请日：1980-01-16

Applicant: Shizuya Matsuura ,  Fumiya Konishi

Inventor： Shizuya Matsuura ,  Fumiya Konishi

IPC: G03F7/039 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01J37/06

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/20 ,  G03F7/2022 ,  H01J37/3174 ,  H01J2237/31771

Abstract: In a process for projecting or irradiating a pattern on a resist film or the like on a substrate such as a semiconductive wafer, the entire area of the resist film is subjected to a pre-exposure at an intensity less than a sensitivity or a critical exposure level of the resist film at which the resist at a selected (exposed or unexposed) area may be completely dissolved away and then a desired pattern is projected or irradiated on the pre-exposed resist film. These steps may be reversed. In both cases, the apparent sensitivity of the resist film may be improved so that the pattern making time may become very short. An apparatus for carrying out the above process is also disclosed.

Abstract translation: 在用于在诸如半导体晶片的衬底上的抗蚀剂膜等上投影或照射图案的过程中，以小于灵敏度或临界曝光的强度对抗蚀剂膜的整个面积进行预曝光 在所选择的（曝光或未曝光）区域处的抗蚀剂可以完全溶解掉的抗蚀剂膜的水平面，然后将期望的图案投影或照射在预曝光的抗蚀剂膜上。 这些步骤可能会相反。 在这两种情况下，可以提高抗蚀剂膜的表观灵敏度，使得图案制作时间可能变得非常短。 还公开了一种用于执行上述过程的装置。

公开(公告)号：US20240337951A1

公开(公告)日：2024-10-10

申请号：US18745211

申请日：2024-06-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Cheng CHEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE ,  Shih-Ming CHANG ,  Tran-Hui SHEN ,  Yen-Cheng HO ,  Chen-Shao HSU

IPC: G03F7/00 ,  G03F1/36 ,  G03F1/76 ,  G03F1/78 ,  G03F7/20 ,  H01J37/317

CPC classification number: G03F7/70441 ,  G03F1/36 ,  G03F1/78 ,  G03F1/76 ,  G03F7/2002 ,  G03F7/70358 ,  G03F7/70608 ,  G03F7/70616 ,  G03F7/70716 ,  H01J37/3174 ,  H01J2237/31771

Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.

公开(公告)号：US09612530B2

公开(公告)日：2017-04-04

申请号：US15068516

申请日：2016-03-11

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Stephen F. Meier ,  Ingo Bork

IPC: G06F17/50 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F1/70 ,  G03F1/68 ,  G03F7/2061 ,  G03F7/2063 ,  G06F17/5009 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31771

Abstract: A method and system for fracturing or mask data preparation are presented in which a set of shots is determined for a multi-beam charged particle beam writer. The edge slope of a pattern formed by the set of shots is calculated. An edge of the pattern which has an edge slope below a target level is identified, and the dosage of a beamlet in a shot in the set of shots is increased to improve the edge slope. The improved edge slope remains less than the target level.

公开(公告)号：US09570267B2

公开(公告)日：2017-02-14

申请号：US14885726

申请日：2015-10-16

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Matsumoto ,  Tomohiro Iijima ,  Munehiro Ogasawara ,  Hideo Inoue ,  Ryoichi Yoshikawa

IPC: A61N5/00 ,  H01J37/04 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/0435 ,  H01J2237/31771 ,  H01J2237/31774

Abstract: A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

Abstract translation: 多带电粒子束写入方法包括：对于多束带电粒子束中的每个束，针对相关束的单个消隐系统，对于多个照射束的每次照射，执行光束的ON / OFF切换 次，通过使用多个单独的消隐系统，分别执行多光束中相应光束的光束ON / OFF控制，以及执行消隐控制，除了通过对每个光束的光束进行ON / OFF切换 单个消隐系统相对于每次照射多次照射，使得在对应于照射的照射时间期间光束处于ON状态，通过使用共同执行光束ON的公共消隐系统 / OFF控制整个多光束。