公开(公告)号：US09941327B2

公开(公告)日：2018-04-10

申请号：US15437628

申请日：2017-02-21

Applicant: General Electric Company

Inventor： Arie Shahar ,  Eliezer Traub ,  Israel Altman

IPC: H01L27/146 ,  H01L27/144 ,  G01T1/24

CPC classification number: H01L27/1469 ,  G01T1/24 ,  G01T1/243 ,  H01L27/144 ,  H01L27/1446 ,  H01L27/146 ,  H01L27/14618 ,  H01L27/14659 ,  H01L27/14685

Abstract: A detector module for detecting photons includes a detector formed from a semiconductive material, the detector having a first surface, an opposing second surface, and a plurality of sidewalls extending between the first and second surfaces, and a guard band coupled to the sidewalls, the guard band having a length that extends about a circumference of the detector, the guard band having a width that is greater than a thickness of the detector such that an upper rim segment of the guard band projects beyond the first surface of the detector, the upper rim segment being folded over a peripheral region of the first surface along the circumference of the detector, the guard band configured to reduce recombinations proximate to the edges of the detector.

公开(公告)号：US20170236855A1

公开(公告)日：2017-08-17

申请号：US15501500

申请日：2015-07-30

Applicant: Sharp Kabushiki Kaisha

Inventor： Kazuhide TOMIYASU ,  Tadayoshi MIYAMOTO

IPC: H01L27/146 ,  H04N5/32 ,  G01T1/20

CPC classification number: H01L27/14603 ,  G01T1/2018 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/1225 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14616 ,  H01L27/14636 ,  H01L27/14663 ,  H01L27/14689 ,  H01L29/78693 ,  H04N5/32 ,  H04N5/369

Abstract: An imaging panel (10) includes a photodiode (15), and a metal layer (43) provided below the photodiode and being in contact with a TFT (14) via a contact hole (CH1). A method of producing the imaging panel (10) includes forming a metal film (43p) covering to protect a first insulating film (42), subsequently forming semiconductor films to configure an n-type amorphous silicon layer (151), an intrinsic amorphous silicon layer (152), and a p-type amorphous silicon layer (153), and further forming the photodiode (15) by patterning the semiconductor films through dry etching.

公开(公告)号：US20170162614A1

公开(公告)日：2017-06-08

申请号：US15437628

申请日：2017-02-21

Applicant: General Electric Company

Inventor： Arie Shahar ,  Eliezer Traub ,  Israel Altman

IPC: H01L27/146 ,  G01T1/24 ,  H01L27/144

CPC classification number: H01L27/1469 ,  G01T1/24 ,  G01T1/243 ,  H01L27/144 ,  H01L27/1446 ,  H01L27/146 ,  H01L27/14618 ,  H01L27/14659 ,  H01L27/14685

Abstract: A detector module for detecting photons includes a detector formed from a semiconductive material, the detector having a first surface, an opposing second surface, and a plurality of sidewalls extending between the first and second surfaces, and a guard band coupled to the sidewalls, the guard band having a length that extends about a circumference of the detector, the guard band having a width that is greater than a thickness of the detector such that an upper rim segment of the guard band projects beyond the first surface of the detector, the upper rim segment being folded over a peripheral region of the first surface along the circumference of the detector, the guard band configured to reduce recombinations proximate to the edges of the detector.

公开(公告)号：US20170117237A1

公开(公告)日：2017-04-27

申请号：US15390654

申请日：2016-12-26

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Joel P. de Souza ,  Bahman Hekmatshoartabari ,  Daniel M. Kuchta ,  Devendra K. Sadana

IPC: H01L23/00 ,  H01L31/02 ,  H01L31/112 ,  H01L31/20 ,  H01L31/14 ,  H01L31/0376 ,  H01L31/0216 ,  H01L31/0203 ,  H01L31/024

CPC classification number: H01L23/573 ,  H01L21/762 ,  H01L23/576 ,  H01L27/144 ,  H01L29/4916 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/024 ,  H01L31/03762 ,  H01L31/1129 ,  H01L31/143 ,  H01L31/202

Abstract: Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

公开(公告)号：US20170098752A1

公开(公告)日：2017-04-06

申请号：US15126125

申请日：2014-05-12

Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

Inventor： LIXING YOU ,  HAO LI ,  XIAOYAN YANG ,  WEIJUN ZHANG ,  ZHEN WANG

IPC: H01L39/16 ,  G01J1/44

CPC classification number: H01L39/16 ,  G01J1/0433 ,  G01J1/0488 ,  G01J1/44 ,  G01J2001/442 ,  G01J2005/208 ,  G02B5/28 ,  H01L27/144 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/09 ,  H01L39/02 ,  H01L39/10

Abstract: A method and a device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), it comprises the steps of: integrating a multi-layer film filter on the superconducting nanowire single photon detector; the multi-layer film filter is a device implemented by a multi-layer dielectric film and having a band-pass filtering function. The extrinsic dark count is the dark count triggered by optical fiber blackbody radiance and external stray light. The superconducting nanowire single photon detector comprises: a substrate having an upper surface integrated with an upper anti-reflection layer and a lower surface integrated with a lower anti-reflection layer; an optical cavity structure; a superconducting nanowire; and a reflector. The present invention is easy to operate, and only needs to integrate the multi-layer film filter on the substrate of the SNSPD to filter non-signal radiation.

公开(公告)号：US09568371B2

公开(公告)日：2017-02-14

申请号：US14375065

申请日：2013-01-29

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Kazuyoshi Tari ,  Mototaka Ishikawa ,  Keiji Shirata ,  Kenzo Nakamura

IPC: G01J5/00 ,  G01J5/10 ,  G01J5/08 ,  G01J5/06 ,  H05K1/02 ,  H01L37/02 ,  G01J5/20 ,  H01L27/144 ,  G03G15/20 ,  H05K1/18

CPC classification number: G01J5/10 ,  G01J5/0022 ,  G01J5/06 ,  G01J5/0803 ,  G01J2005/103 ,  G01J2005/206 ,  G03G15/2039 ,  G03G2215/00772 ,  H01L27/144 ,  H01L37/02 ,  H05K1/0271 ,  H05K1/189 ,  H05K2201/068 ,  H05K2201/09136 ,  H05K2201/09781

Abstract: Provided is an infrared sensor which is capable of measuring a temperature of an object to be measured with high accuracy even when lead wires are connected to one side thereof. The infrared sensor includes an insulating film; a first and a second heat sensitive element which are provided on one face of the insulating film; a first and a second wiring film that are respectively connected to the first and the second heat sensitive element; an infrared reflecting film; a plurality of terminal electrodes; and a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least a portion of the longer one of the first or the second wiring film in wiring distance from the terminal electrodes, and is formed of a material with greater heat dissipation than the insulating film.

Abstract translation: 提供一种能够即使在将引线连接到其一侧时也能够以高精度测量被测量物体的温度的红外线传感器。 红外线传感器包括绝缘膜; 第一和第二热敏元件，设置在绝缘膜的一个面上; 分别连接到第一和第二热敏元件的第一和第二布线膜; 红外反射膜; 多个端子电极; 并且设置在所述绝缘膜的另一面上的热电阻调节膜与所述端子电极的布线距离处于与所述第一或第二布线膜中较长的一个的至少一部分相对，并且由所述热电阻调节膜形成为 具有比绝缘膜更大散热的材料。

公开(公告)号：US20170035359A1

公开(公告)日：2017-02-09

申请号：US14913492

申请日：2015-09-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  ORDOS YUANSHENG OPTOELECTRONICS CO., LTD.

Inventor： Yun QIU ,  Jiuxia YANG

IPC: A61B5/00 ,  A61B5/024 ,  G06F3/041 ,  H01L27/12

CPC classification number: A61B5/6887 ,  A61B5/02416 ,  A61B5/02438 ,  A61B5/02444 ,  A61B5/14551 ,  A61B5/6898 ,  A61B5/7278 ,  A61B5/742 ,  G06F3/0412 ,  G06F3/042 ,  H01L27/1214 ,  H01L27/144

Abstract: A display panel having health monitoring function, including a first substrate; a second substrate; and a monitoring unit. The monitoring unit is configured to monitor a change in human physiological information and is disposed on the first substrate or the second substrate through a patterning process. Such display panel having health monitoring function solves the technical problem that existing display panels having health monitoring function are poor in level of integration with incompact structures.

Abstract translation: 一种具有健康监测功能的显示面板，包括第一基板; 第二基板; 和监视单元。 监视单元被配置为监视人体生理信息的变化，并且通过图案化处理被布置在第一基板或第二基板上。 具有健康监视功能的显示面板解决了具有健康监视功能的现有显示面板与不兼容结构集成度差的技术问题。

公开(公告)号：US20160276330A1

公开(公告)日：2016-09-22

申请号：US15135945

申请日：2016-04-22

Applicant: International Business Machines Corporation

Inventor： Effendi Leobandung ,  Ning Li ,  Devendra K. Sadana

IPC: H01L25/00 ,  H01S5/32 ,  H01L31/18 ,  H01S5/323 ,  H01L25/16 ,  H01L27/144

CPC classification number: H01L27/144 ,  G02B6/00 ,  G02B6/12004 ,  G02B2006/12078 ,  G02B2006/12121 ,  G02B2006/12123 ,  H01L21/84 ,  H01L25/167 ,  H01L25/50 ,  H01L27/092 ,  H01L31/0304 ,  H01L31/184 ,  H01L31/1852 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/3211 ,  H01S5/32316

Abstract: A method of forming an optoelectronic device and a silicon device on a single chip. The method may include; forming a stack of layers on a substrate in a first and second region, the stack of layers include a semiconductor layer, a first insulator layer, a waveguide, a second insulator layer, and a device base layer; forming the device on the device base layer in the second region; forming a device insulator layer on the device and on the device base layer in the second region; and forming the optoelectronic device in the first region, the optoelectronic device has a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is on the semiconductor layer, the active region is on the bottom cladding layer, and the top cladding layer is on the active region.

Abstract translation: 在单个芯片上形成光电器件和硅器件的方法。 该方法可以包括： 在第一和第二区域中在衬底上形成一叠层，所述堆叠层包括半导体层，第一绝缘体层，波导，第二绝缘体层和器件基极层; 在所述第二区域中的所述器件基底层上形成所述器件; 在所述器件上和所述第二区域中的器件基底层上形成器件绝缘体层; 在所述第一区域形成所述光电子器件的情况下，所述光电子器件具有底部包层，有源区域和顶部覆层，所述底部包层位于所述半导体层上，所述有源区域位于所述底部包层上， 并且顶部包层位于活性区域上。

公开(公告)号：US09362444B1

公开(公告)日：2016-06-07

申请号：US14661037

申请日：2015-03-18

Applicant: International Business Machines Corporation

Inventor： Effendi Leobandung ,  Ning Li ,  Devendra K. Sadana

IPC: G02B6/10 ,  H01L31/0256 ,  H01L31/18 ,  H01L31/0304 ,  H01S5/323 ,  H01L21/84 ,  G02B6/12

CPC classification number: H01L27/144 ,  G02B6/00 ,  G02B6/12004 ,  G02B2006/12078 ,  G02B2006/12121 ,  G02B2006/12123 ,  H01L21/84 ,  H01L25/167 ,  H01L25/50 ,  H01L27/092 ,  H01L31/0304 ,  H01L31/184 ,  H01L31/1852 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/3211 ,  H01S5/32316

Abstract: A method of forming an optoelectronic device and a silicon device on a single chip. The method may include; forming a silicon substrate in a first and second region of a single chip; forming a germanium layer above the substrate in at least the first region; forming the optoelectronic device on the germanium layer in the first region, the optoelectronic device has a top cladding layer, a bottom cladding layer, and an active region, the bottom cladding layer is on the semiconductor layer, the active region is adjacent to a waveguide and on the bottom cladding layer, the top cladding layer is on the active region; and forming the silicon device on a silicon layer in the second region.

Abstract translation: 在单个芯片上形成光电器件和硅器件的方法。 该方法可以包括： 在单个芯片的第一和第二区域中形成硅衬底; 在至少第一区域中在衬底上形成锗层; 在第一区域的锗层上形成光电子器件，所述光电子器件具有顶部覆层，底部包层和有源区域，所述底部包层位于所述半导体层上，所述有源区域与波导 并且在下包层上，顶层包层位于有源区上; 以及在所述第二区域中的硅层上形成所述硅器件。

公开(公告)号：US09209214B2

公开(公告)日：2015-12-08

申请号：US13893592

申请日：2013-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-Won Kwon ,  June-Mo Koo ,  Yun-Ki Lee ,  Se-Hoon Jang

IPC: H01L27/146 ,  H01L27/144

CPC classification number: H01L27/1463 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor device includes a substrate including a front side and a back side opposite the front side, first P-type regions located adjacent to the back side and spaced apart from each other in the substrate, N-type regions located under the first P-type regions and spaced apart from each other in the substrate, and second P-type regions located adjacent to the back side and located between the first P-type regions.

Abstract translation: 半导体器件包括：基板，其包括前侧和与前侧相反的背面;位于基板的背面相邻且间隔开的第一P型区域，位于第一P- 并且在基板中彼此间隔开，并且位于相邻于背侧且位于第一P型区域之间的第二P型区域。