Barrier film
    13.
    发明授权

    公开(公告)号:US12098258B2

    公开(公告)日:2024-09-24

    申请号:US17285189

    申请日:2019-10-22

    申请人: LG CHEM, LTD.

    IPC分类号: C23C18/12 C08J7/054 C23C18/14

    摘要: Provided is a barrier film, comprising:



    a base layer; and
    an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s or less in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s,
    wherein the second region has a higher elemental content of N than that of the first region,
    the first region has a thickness of 50 nm or more, and
    the ratio (d1/d2) of the thickness (d1) of the first region to the thickness (d2) of the second region is 2 or less,
    the barrier film having excellent barrier properties and optical properties.




    The barrier film can be used for electronic products sensitive to moisture or the like.