公开(公告)号：US10600606B2

公开(公告)日：2020-03-24

申请号：US16391629

申请日：2019-04-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Injo Ok ,  Choonghyun Lee ,  Soon-Cheon Seo ,  Seyoung Kim

IPC: H01L21/00 ,  H01J21/10 ,  H01J9/18 ,  H01J19/24 ,  H01L29/788 ,  H01L27/11556 ,  H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L29/786

Abstract: A method is presented for controlling an electric field from a gate structure. The method includes forming a hardmask over a fin stack including a plurality of layers, forming a first dielectric layer over the hardmask, forming a sacrificial layer over the first dielectric layer, etching the sacrificial layer to expose a top surface of the first dielectric layer, depositing a second dielectric layer in direct contact with exposed surfaces of the first dielectric layer and the sacrificial layer, removing a layer of the plurality of layers of the fin stack to define an air gap within the fin stack, and forming triangle-shaped epitaxial growths within the air gap defined within the fin stack.

公开(公告)号：US20190252146A1

公开(公告)日：2019-08-15

申请号：US16342475

申请日：2017-10-17

Applicant: WiSys Technology Foundation, Inc.

Inventor： Charles D. Nelson ,  Harold T Evensen

IPC: H01J21/10 ,  H01L51/10 ,  H01L51/05 ,  H01L51/00 ,  H01J9/02 ,  H01J19/24 ,  H01J19/38 ,  H01J9/18

CPC classification number: H01J21/105 ,  H01J1/304 ,  H01J9/025 ,  H01J9/18 ,  H01J19/24 ,  H01J19/38 ,  H01J19/82 ,  H01L51/0017 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/055 ,  H01L51/0558 ,  H01L51/105

Abstract: A field emission transistor uses carbon nanotubes positioned to extend along a substrate plane rather than perpendicularly thereto. The carbon nanotubes may be pre-manufactured and applied to the substrate and then may be etched to create a gap between the carbon nanotubes and an anode through which electrons may flow by field emission. A planar gate may be positioned beneath the gap to provide a triode structure.

公开(公告)号：US20180218872A1

公开(公告)日：2018-08-02

申请号：US15801881

申请日：2017-11-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01J21/08 ,  H01J9/18 ,  H01J9/39 ,  H01J19/42 ,  H01L41/09 ,  H01L41/047 ,  H01L41/29

Abstract: A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.

公开(公告)号：US20180218871A1

公开(公告)日：2018-08-02

申请号：US15418807

申请日：2017-01-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qing Cao ,  Kangguo Cheng ,  Zhengwen Li ,  Fei Liu

IPC: H01J21/08 ,  H01L41/047 ,  H01L41/09 ,  H01L41/29 ,  H01J19/42 ,  H01J9/39 ,  H01J9/18

Abstract: A vacuum transistor includes a substrate and a first terminal formed on the substrate. A piezoelectric element has a second terminal formed on the piezoelectric element, wherein the piezoelectric element is provided over the first terminal to provide a gap between the first terminal and the second terminal. The gap is adjusted in accordance with an electrical field on the piezoelectric element.

公开(公告)号：US20180108509A1

公开(公告)日：2018-04-19

申请号：US15294232

申请日：2016-10-14

Applicant: Stephen Styonavich

Inventor： Stephen Styonavich

IPC: H01J31/50 ,  H01L27/148 ,  H01J29/02 ,  H01J29/18 ,  H01J9/18

Abstract: Image intensifiers may include a photocathode that emits photoelectrons in proportion to the rate photons impact the photocathode. The photoelectrons are multiplied using a microchannel plate that includes a plurality of microchannels. Photoelectrons are scattered by the microchannel plate when the photoelectrons strike the surface of the microchannel plate rather than enter one of the microchannels. Electron scatter within an image intensifier results in a halo or bloom around bright or luminous objects. Halo or bloom may be minimized by reducing the electron scatter within the image intensifier. Deposition of an anti-scattering layer on the surface of the microchannel plate within the image intensifier can absorb photoelectrons that fail to enter a microchannel and may thus reduce the incidence of halo or bloom.

公开(公告)号：US20180040451A1

公开(公告)日：2018-02-08

申请号：US15786479

申请日：2017-10-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Zhiying Bao ,  Xiaochuan Chen ,  Wenbo Jiang ,  Shijun Wang ,  Lei Wang ,  Yue Li ,  Yanna Xue ,  Zhenhua Lv ,  Wenjun Xiao ,  Yong Zhang

IPC: H01J29/02 ,  H01J31/12 ,  H01J9/18 ,  H01J29/96 ,  H01J29/32 ,  H01L27/12 ,  H01J9/02 ,  G09G3/20

CPC classification number: H01J29/021 ,  G09G3/2092 ,  H01J9/025 ,  H01J9/185 ,  H01J29/32 ,  H01J29/96 ,  H01J31/127 ,  H01J2209/0223 ,  H01J2229/186 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259

Abstract: The present application discloses an array substrate comprising a first substrate, a first electrode on the first substrate, a passivation layer on a side of the first electrode distal to the first substrate, the passivation layer comprising a plurality of first vias, each of which corresponds to a different part of the first electrode, an electron emission source layer on a side of the first electrode distal to the first substrate comprising at least one electron emission source in each of the plurality of first vias, and a dielectric layer on a side of the first electrode distal to the first substrate comprising a plurality of dielectric blocks corresponding to the plurality of first vias, at least a portion of each of the plurality of dielectric blocks in each of the plurality of first vias. The at least one electron emission source comprises a first portion having a first end and a second portion having a second end. The first end is in contact with the first electrode, the first portion is within a corresponding one of the plurality of dielectric blocks. The second portion and the second end are outside the corresponding one of the plurality of dielectric blocks.

公开(公告)号：US09805904B2

公开(公告)日：2017-10-31

申请号：US14539670

申请日：2014-11-12

Applicant: Schlumberger Technology Corporation

Inventor： Jani Reijonen ,  Matthieu Simon

IPC: H01J35/14 ,  G01V5/12 ,  H01J9/18 ,  H05G1/06

CPC classification number: H01J35/14 ,  G01V5/12 ,  H01J9/18 ,  H05G1/06

Abstract: A radiation generator may include an elongate generator housing having a proximal end and a distal end, a target electrode within the housing at the distal end thereof, a charged particle source within the housing at the proximal end thereof to direct charged particles at the target based upon a first biasing potential, and a field shaping electrode within the housing and adjacent the source to shape a field within the housing. At least one accelerator electrode may be within the housing on an opposite side of the field shaping electrode from the source to accelerate charged particles from the source to the target based upon a second biasing potential different than the first biasing potential. The field shaping electrode may be electrically floating so that the charged particles are directed from the source to the target without applying a biasing potential to the field shaping electrode.

公开(公告)号：US20170263409A1

公开(公告)日：2017-09-14

申请号：US15458785

申请日：2017-03-14

Applicant: Elwha LLC

Inventor： Andrew T. Koch ,  Andrew R. Lingley ,  Max N. Mankin ,  Tony S. Pan

IPC: H01J9/02 ,  H01J9/18

Abstract: The present disclosure relates to methods of fabricating electronic devices or components thereof. The electronic devices can be vacuum electronic devices. The methods can include disposing a first material on or in a substrate. The methods can further include removing a portion of the first material to form one or more structure protruding from the substrate. The methods can further include disposing a second material onto the one or more structure of the first material, and then removing a portion of the second material to form one or more sidewall structures. A second portion of the one or more structures of the first material can also be removed to form a fabricated structure including the substrate and one or more sidewall structures protruding therefrom.

公开(公告)号：US20160336138A1

公开(公告)日：2016-11-17

申请号：US14713573

申请日：2015-05-15

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Shengwu Chang ,  Jeff Burgess ,  William Leavitt ,  Michael St Peter ,  Matt Mosher ,  Joe Olson ,  Frank Sinclair

IPC: H01J27/08 ,  H01J9/18 ,  H01J9/385 ,  H01J27/02

CPC classification number: H01J27/08 ,  H01J3/04 ,  H01J5/02 ,  H01J9/18 ,  H01J9/385 ,  H01J27/024 ,  H01J37/08

Abstract: Provided herein are approaches for improving ion beam extraction stability and ion beam current for an ion extraction system. In one approach, a source housing assembly may include a source housing surrounding an ion source including an arc chamber, the source housing having an extraction aperture plate mounted at a proximal end thereof. The source housing assembly further includes a vacuum liner disposed within an interior of the source housing to form a barrier around a set of vacuum pumping apertures. As configured, openings in the source housing assembly, other than an opening in the extraction aperture plate, are enclosed by the extraction aperture plate and the vacuum liner, thus ensuring appendix arcs or extraneous ions produced outside the arc chamber remain within the source housing. Just those ions produced within the arc chamber exit the source housing through the opening of the extraction aperture plate.

Abstract translation: 本文提供了用于改进离子提取系统的离子束提取稳定性和离子束电流的方法。 在一种方法中，源壳体组件可以包括围绕包括电弧室的离子源的源壳体，源壳体具有安装在其近端处的抽吸孔板。 源壳体组件还包括设置在源壳体的内部中以在一组真空泵浦孔周围形成屏障的真空衬套。 根据构造，源壳体组件中除了抽吸孔板中的开口之外的开口被提取孔板和真空衬套包围，从而确保在电弧室外产生的附加电弧或外来离子保留在源壳体内。 恰好在电弧室内产生的那些离子通过提取孔板的开口离开源壳体。

公开(公告)号：US09236734B2

公开(公告)日：2016-01-12

申请号：US14301445

申请日：2014-06-11

Applicant: NXP B.V.

Inventor： Michael in 't Zandt ,  Klaus Reimann ,  Olaf Wunnicke

IPC: H02H9/00 ,  H02H9/06 ,  H01L23/60 ,  H01L27/02 ,  H01J9/02 ,  H01J9/18

CPC classification number: H02H9/06 ,  H01J9/025 ,  H01J9/18 ,  H01L23/60 ,  H01L27/0288 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a method of forming an electric field gap device, such as a lateral field emission ESD protection structure, in which a cathode layer is formed between dielectric layers. Anode channels are formed and they are lined with a sacrificial dielectric layer. Conductive anode pillars are formed in the anode channels, and then the sacrificial dielectric layer is etched away in the vicinity of the anode pillars. The etching leaves a suspended portion of the cathode layer which defines a lateral gap to an adjacent anode pillar. This portion has a sharp end face defined by the corners of the cathode layer and the lateral gap can be defined accurately as it corresponds to the thickness of the sacrificial dielectric layer.

Abstract translation: 本发明提供一种形成诸如横向场发射ESD保护结构的电场间隙器件的方法，其中在电介质层之间形成阴极层。 形成阳极通道并且衬有牺牲介电层。 在阳极通道中形成导电阳极柱，然后在阳极柱附近刻蚀牺牲介电层。 蚀刻离开阴极层的悬浮部分，其限定与相邻阳极柱的横向间隙。 该部分具有由阴极层的角部限定的尖端面，并且可以精确地限定横向间隙，因为其对应于牺牲介电层的厚度。