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公开(公告)号：US20180102482A1
公开(公告)日：2018-04-12
申请号：US15287342
申请日：2016-10-06
Applicant: International Business Machines Corporation
Inventor： Damon B. Farmer , Martin M. Frank , Shu-Jen Han
CPC classification number: H01L51/0048 , H01L29/0673 , H01L29/78684 , H01L51/0026 , H01L51/0525 , H01L51/0558
Abstract: Dielectric treatments for carbon nanotube devices are provided. In one aspect, a method for forming a carbon nanotube-based device is provided. The method includes: providing at least one carbon nanotube disposed on a first dielectric; removing contaminants from surfaces of the first dielectric; and depositing a second dielectric onto the first dielectric and at least partially surrounding the at least one carbon nanotube. A carbon nanotube-based device is also provided.
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公开(公告)号：US20180067064A1
公开(公告)日：2018-03-08
申请号：US15811265
申请日：2017-11-13
Applicant: International Business Machines Corporation
Inventor： Stephen W. Bedell , Shu-Jen Han , Ning Li , Devendra K. Sadana
CPC classification number: G01N27/04 , A61B2562/164 , H01L21/02524 , H01L24/83 , H01L27/0288 , H01L27/0802 , H01L28/20 , H01L41/18
Abstract: A material removal process referred to as spalling is used to provide flexible and stretchable sensors that can be used for healthcare monitoring, bio-medical devices, wearable electronic devices, artificial skin, large area sensing, etc. The flexible and stretchable sensors of the present application have high sensitivity that is comparable to that of a bulk silicon sensor. The flexible and stretchable sensors comprise single crystalline spring-like structures that couple various resistor structures together.
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公开(公告)号：US20170344485A1
公开(公告)日：2017-11-30
申请号：US15164551
申请日：2016-05-25
Applicant: International Business Machines Corporation
Inventor： Chia-Yu Chen , Jungwook Choi , Shu-Jen Han , Yinglong Xia
IPC: G06F12/0875 , G06F9/30
Abstract: Techniques that facilitate heterogeneous runahead processing for a processor core are provided. In one example, a first core performs a first execution of a first sequence of instructions, where the first core is communicatively coupled to a first cache memory. A second core performs a second execution of at least a portion of the first sequence of instructions and a first determination that data associated with the first sequence of instructions fails to be stored in the first cache memory, where the first determination is performed concurrent with the first execution, and the first core executes a second sequence of instructions based on a second determination that the second core is performing the second execution of at least a portion of the first sequence of instructions.
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公开(公告)号：US09787473B2
公开(公告)日：2017-10-10
申请号：US14749092
申请日：2015-06-24
Applicant: International Business Machines Corporation
Inventor： Wilfried Haensch , Shu-Jen Han , Keith A. Jenkins , Dirk Pfeiffer
CPC classification number: H04L9/0861 , G09C1/00 , H04L9/0866 , H04L2209/12
Abstract: Techniques for use of carbon nanotubes as an anti-tampering feature and for use of randomly metallic or semiconducting carbon nanotubes in the generation of a physically unclonable cryptographic key generation are provided. In one aspect, a cryptographic key having an anti-tampering feature is provided which includes: an array of memory bits oriented along at least one bit line and at least one word line, wherein each of the memory bits comprises a memory cell, wherein the cryptographic key is stored in the memory cell, and wherein the memory cell is connected to the at least one bit line; and a metallic carbon nanotube interconnect which connects the memory cell to the at least one word line. A cryptographic key and method for processing the cryptographic key are also provided.
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公开(公告)号：US09762391B2
公开(公告)日：2017-09-12
申请号：US14953695
申请日：2015-11-30
Applicant: International Business Machines Corporation
Inventor： Shu-Jen Han
IPC: H04L9/00 , H04L9/32 , H01L27/28 , H01L51/00 , H01L51/05 , G06K7/10 , H04L9/08 , H04W12/10 , H04W12/06 , G06K19/07 , G09C1/00 , H04W12/04 , H04W12/02
CPC classification number: H04L9/321 , G06F21/44 , G06F21/602 , G06K7/10297 , G06K19/0723 , G09C1/00 , H01L21/8258 , H01L23/576 , H01L27/0688 , H01L27/283 , H01L51/0048 , H01L51/0558 , H04L9/0866 , H04L9/32 , H04L2209/805 , H04W12/02 , H04W12/04 , H04W12/06 , H04W12/10
Abstract: Embodiments relate to the authentication of a semiconductor. An identification circuit disposed within a package of an integrated circuit, and the identification circuit includes carbon-nanotube transistors configured to generate an encryption key.
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Patent Agency Ranking
公开(公告)号：US20170244055A1
公开(公告)日：2017-08-24
申请号：US15426677
申请日：2017-02-07
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Sarunya Bangsaruntip , Michael Engel , Shu-Jen Han
IPC: H01L51/05 , H01L29/66 , H01L21/02 , H01L29/06 , H01L29/423
Abstract: A field effect transistor including a dielectric layer on a substrate, a nano-structure material (NSM) layer on the dielectric layer, a source electrode and a drain electrode formed on the NSM layer, a gate dielectric formed on at least a portion of the NSM layer between the source electrode and the drain electrode, a T-shaped gate electrode formed between the source electrode and the drain electrode, where the NSM layer forms a channel of the FET, and a doping layer on the NSM layer extending at least from the sidewall of the source electrode to a first sidewall of the gate dielectric, and from a sidewall of the drain electrode to a second sidewall of the gate dielectric.
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公开(公告)号：US20170237007A1
公开(公告)日：2017-08-17
申请号：US15585584
申请日：2017-05-03
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Shu-Jen Han
CPC classification number: H01L51/0023 , H01L51/0026 , H01L51/0048 , H01L51/0516 , H01L51/0541 , H01L51/055 , H01L51/0566 , H01L51/105 , H01L2251/301
Abstract: A method of fabricating a semiconductor device includes depositing a dielectric layer on a substrate and a nanomaterial on the dielectric layer. The method also includes depositing a thin metal layer on the nanomaterial and removing a portion of the thin metal layer from a gate area. The method also includes depositing a gate dielectric layer. The method also includes selectively removing the gate dielectric layer from a source contact region and a drain contact region. The method also includes patterning a gate electrode, a source electrode, and a drain electrode.
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公开(公告)号：US20170146474A1
公开(公告)日：2017-05-25
申请号：US15340550
申请日：2016-11-01
Applicant: International Business Machines Corporation
Inventor： Stephen W. Bedell , Shu-Jen Han , Ning Li , Devendra K. Sadana
CPC classification number: G01N27/04 , A61B2562/164 , H01L21/02524 , H01L24/83 , H01L27/0288 , H01L27/0802 , H01L28/20 , H01L41/18
Abstract: A material removal process referred to as spalling is used to provide flexible and stretchable sensors that can be used for healthcare monitoring, bio-medical devices, wearable electronic devices, artificial skin, large area sensing, etc. The flexible and stretchable sensors of the present application have high sensitivity that is comparable to that of a bulk silicon sensor. The flexible and stretchable sensors comprise single crystalline spring-like structures that couple various resistor structures together.
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公开(公告)号：US20160370681A1
公开(公告)日：2016-12-22
申请号：US14964864
申请日：2015-12-10
Applicant: International Business Machines Corporation
Inventor： Shu-Jen Han
IPC: G02F1/157 , G02F1/155 , G02F1/163 , G06N3/067 , H01L31/09 , H01L31/102 , H01L31/0232 , G06N3/04 , G02F1/15 , H01L31/18
CPC classification number: G02F1/157 , G02F1/1508 , G02F1/1525 , G02F1/1533 , G02F1/155 , G02F1/163 , G06N3/0675 , H01L31/02327 , H01L31/09 , H01L31/102 , H01L31/18 , H01L31/1804 , H01L31/1808 , H01L31/1828 , H01L31/184 , H01L31/1844
Abstract: A synaptic electronic device includes a substrate including a one or more of a semiconductor and an insulator; a photosensitive layer disposed on a surface of the substrate; an electrochromic stack disposed on the photosensitive layer, the electrochromic stack including a first transparent electrode layer, a cathodic electrochromic layer, a solid electrolyte layer, an anodic electrochromic layer, and a second transparent electrode layer; and a pair of electrodes disposed on the photosensitive layer and on opposing sides of the electrochromic stack.
Abstract translation: 突触电子器件包括包括半导体和绝缘体中的一个或多个的衬底; 设置在所述基板的表面上的感光层; 设置在感光层上的电致变色层，电致变色层包括第一透明电极层，阴极电致变色层，固体电解质层，阳极电致变色层和第二透明电极层; 以及设置在感光层上并在电致变色堆叠的相对侧上的一对电极。
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公开(公告)号：US09496230B1
公开(公告)日：2016-11-15
申请号：US14700376
申请日：2015-04-30
Applicant: International Business Machines Corporation
Inventor： Qing Cao , Shu-Jen Han , Li-Wen Hung
IPC: H01L23/16 , H01L31/075 , H01L23/00 , H01L25/16 , H01L31/02 , H01L31/0288 , H01L31/18 , H01L49/02
CPC classification number: H01L31/075 , B81C1/0015 , G06K7/10366 , G06K19/07372 , H01L23/544 , H01L23/576 , H01L31/02005 , H01L31/02019 , H01L31/0203 , H01L31/0288 , H01L31/05 , H01L31/105 , H01L31/1804 , H01L2223/5444 , H01L2223/54486 , H01L2924/14
Abstract: Embodiments relate to the detection of semiconductor tampering with a light-sensitive circuit. A tamper detection device for an integrated circuit includes a light-sensitive circuit disposed within a package of an integrated circuit. The light-sensitive circuit closes in response to an exposure to a light source, indicating a tamper condition.
Abstract translation: 实施例涉及用光敏电路检测半导体篡改。 用于集成电路的篡改检测装置包括设置在集成电路的封装内的感光电路。 光敏电路响应于对光源的曝光而闭合，表示篡改状况。
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