SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210257331A1

    公开(公告)日:2021-08-19

    申请号:US16793991

    申请日:2020-02-18

    Abstract: Present disclosure provides a semiconductor package, including a first substrate having a first active surface and a first trench recessed from the first active surface, a second substrate having a second trench facing the first trench, and a pathway cavity defined by the first trench and the second trench. The first trench comprises a first metal protrusion and a first insulating protrusion. A method for manufacturing the semiconductor package described herein is also disclosed.

    SENSOR DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210246015A1

    公开(公告)日:2021-08-12

    申请号:US16783914

    申请日:2020-02-06

    Abstract: A sensor device package and method of manufacturing the same are provided. The sensor device package includes a carrier, a sensor component, an encapsulation layer and a protection film. The sensor component is disposed on the carrier, and the sensor component includes an upper surface and edges. The encapsulation layer is disposed on the carrier and encapsulates the edges of the sensor component. The protection film covers at least a portion of the upper surface of the sensor component.

    Wiring structure having low and high density stacked structures

    公开(公告)号:US11069605B2

    公开(公告)日:2021-07-20

    申请号:US16399909

    申请日:2019-04-30

    Inventor: Wen Hung Huang

    Abstract: A wiring structure includes at least one upper conductive structure, a lower conductive structure and an intermediate layer. The upper conductive structure includes at least one upper dielectric layer, at least one upper circuit layer in contact with the upper dielectric layer, and at least one bonding portion electrically connected to the upper circuit layer. The lower conductive structure includes at least one lower dielectric layer and at least one lower circuit layer in contact with the lower dielectric layer. The intermediate layer is disposed between the upper conductive structure and the lower conductive structure and bonding the upper conductive structure and the lower conductive structure together. The upper conductive structure is electrically connected to the lower conductive structure.

    Semiconductor package structure
    239.
    发明授权

    公开(公告)号:US11063013B2

    公开(公告)日:2021-07-13

    申请号:US16413480

    申请日:2019-05-15

    Abstract: A semiconductor package structure includes a first semiconductor die having an active surface and a passive surface opposite to the active surface, a conductive element leveled with the first semiconductor die, a first redistribution layer (RDL) being closer to the passive surface than to the active surface, a second RDL being closer to the active surface than to the passive surface, and a second semiconductor die over the second RDL and electrically coupled to the first semiconductor die through the second RDL. A first conductive path is established among the first RDL, the conductive element, the second RDL, and the active surface of the first semiconductor die.

    SEMICONDUCTOR DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210210398A1

    公开(公告)日:2021-07-08

    申请号:US16734023

    申请日:2020-01-03

    Inventor: Wen-Long LU

    Abstract: A semiconductor device package includes a substrate, a first electronic component and a first encapsulant. The substrate has a first surface and a second surface opposite to the first surface. The first electronic component is disposed on the first surface of the substrate. The first encapsulant is disposed on the first surface of the substrate and covers the first electronic component. The first encapsulant has a first surface facing away the first surface of the substrate and includes a recess at an edge of the first surface of the first encapsulant.

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