-
公开(公告)号:US09747053B1
公开(公告)日:2017-08-29
申请号:US15221343
申请日:2016-07-27
Applicant: STMicroelectronics (Rousset) SAS
Inventor: François Tailliet
CPC classification number: G06F3/0625 , G06F3/061 , G06F3/0655 , G06F3/0688 , G11C16/0433 , G11C16/10 , G11C16/12
Abstract: A memory device of the non-volatile electrically-erasable and programmable memory type is provided. The memory device includes a matrix memory plane of memory cells connected to bit lines. Programming circuitry is configured to select a memory cell and to apply a programming pulse to the corresponding bit line. The memory plane is disposed in a local well at a floating potential and the programming circuitry is configured to increase the potential of the local well simultaneously with the application of the programming pulse to the bit line of a selected memory cell.
-
232.
公开(公告)号:US09729202B2
公开(公告)日:2017-08-08
申请号:US15198758
申请日:2016-06-30
Applicant: STMICROELECTRONICS (ROUSSET) SAS
Inventor: Alexandre Tramoni , Pierre Rizzo
CPC classification number: H04B5/0031 , H03H7/40 , H04W76/14
Abstract: A first component (CMP1) is connected to the antenna (ANT) and to an impedance matching circuit (CAI) configurable on command and connected to the antenna, and in the absence of another component (CMP2) connected to the antenna, the impedance matching circuit is placed in a first configuration in which it forms with the first component and the antenna a resonant circuit having a first resonant frequency compatible with a carrier frequency. In the presence of a second component (CMP2) connected to the antenna, the impedance matching circuit is placed in a second configuration in which it forms with the first component, the second component and the antenna a resonant circuit having a second resonant frequency compatible with the carrier frequency.
-
公开(公告)号:US09729199B2
公开(公告)日:2017-08-08
申请号:US14984966
申请日:2015-12-30
Applicant: STMICROELECTRONICS (ROUSSET) SAS
Inventor: Mark Wallis , Yoann Bouvet , Pierre Demaj
CPC classification number: H04B3/54 , H04L5/0007 , H04L25/03993 , H04L25/067 , H04L27/2607 , H04L27/2656 , H04L27/2675 , H04L27/2691
Abstract: A method is for processing an analog signal coming from a transmission channel. The analog signal may include a useful signal modulated on a sub-set of carriers. The method may include analog-to-digital converting of the analog signal into a digital signal, and synchronization processing the digital signal. The synchronizing may include determining, in a time domain, a limited number of coefficients of a predictive filter from an autoregressive model of the digital signal, and filtering the digital signal in the time domain by a digital finite impulse response filter with coefficients based upon the limited number of coefficients to provide a filtered digital signal. The method may include detecting of an indication allowing a location in the frame structure to be identified, using the filtered digital signal and a reference signal.
-
公开(公告)号:US09710650B2
公开(公告)日:2017-07-18
申请号:US14668692
申请日:2015-03-25
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Yannick Teglia
CPC classification number: G06F21/575 , G01K13/00 , G06F12/1458 , G06F21/554 , G06F21/71 , G06F2212/1052 , G06F2221/034 , G06F2221/2137
Abstract: A method of detecting a cold-boot attack on an integrated circuit including the steps of: transferring, into a first volatile memory of the integrated circuit, a pattern stored in a non-volatile memory of the circuit; periodically causing a switching down and a switching up of the first volatile memory; and verifying that the number of bits having switched state is within a range of values.
-
235.
公开(公告)号:US09705533B2
公开(公告)日:2017-07-11
申请号:US14961985
申请日:2015-12-08
Applicant: STMICROELECTRONICS (ROUSSET) SAS
Inventor: Mark Wallis
CPC classification number: H04B1/0007 , H04B3/54 , H04B2203/5425 , H04L5/001
Abstract: A method includes digital/analog conversion of a digital signal modulated by information to provide a modulated initial analog signal having a crest factor greater than one, and amplification of the initial analog signal to provide an amplified modulated signal. A modulated channel analog signal derived from the modulated amplified analog signal is transmitted over a communications channel, with impedance of the communications channel varying during the transmission. The method further includes at least one determination during the transmission of a peak-clipping rate of the amplified analog signal over at least one time interval, and an adjustment of a level of the initial analog signal as a function of the determined peak-clipping rate.
-
公开(公告)号:US09689659B2
公开(公告)日:2017-06-27
申请号:US14509920
申请日:2014-10-08
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Maxime Teissier , Cyril Troise
IPC: G01B7/14 , G01V3/08 , H03K17/945 , H03K17/955 , G01B7/00
CPC classification number: G01B7/14 , G01B7/003 , G01V3/088 , H03K17/945 , H03K17/955 , H03K2217/960705
Abstract: The disclosure relates to a method of detecting an object using a detection signal supplied by a proximity sensor. The method comprises the steps of generating a reference signal by filtering the value of the detection signal, defining a first detection threshold, and going from an object non-detecting state to an object detecting state when the value of the detection signal becomes greater than the first detection threshold. When the value of the detection signal becomes greater than the first detection threshold, the value of the reference signal is readjusted in a manner such that the value of the detection signal again becomes less than or respectively greater than, the first detection threshold.
-
237.
公开(公告)号:US20170179247A1
公开(公告)日:2017-06-22
申请号:US15454184
申请日:2017-03-09
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Julien Delalleau , Christian Rivero
IPC: H01L29/423 , H01L21/311 , H01L29/78 , H01L29/08 , H01L21/02 , H01L29/66 , H01L21/28
CPC classification number: H01L29/4236 , H01L21/02236 , H01L21/28167 , H01L21/30604 , H01L21/31111 , H01L29/0847 , H01L29/42368 , H01L29/42376 , H01L29/66545 , H01L29/66621 , H01L29/78
Abstract: An integrated MOS transistor is formed in a substrate. The transistor includes a gate region buried in a trench of the substrate. The gate region is surrounded by a dielectric region covering internal walls of the trench. A source region and drain region are situated in the substrate on opposite sides of the trench. The dielectric region includes an upper dielectric zone situated at least partially between an upper part of the gate region and the source and drain regions. The dielectric region further includes a lower dielectric zone that is less thick than the upper dielectric zone and is situated between a lower part of the gate region and the substrate.
-
公开(公告)号:US20170168935A1
公开(公告)日:2017-06-15
申请号:US15141048
申请日:2016-04-28
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Christophe Arnal , Roland Van Der Tuijn
CPC classification number: G06F12/0646 , G06F3/0644 , G06F9/5077 , G06F12/023 , G06F12/0284 , G06F12/0802 , G06F12/1009 , G06F2212/1041 , G06F2212/151 , G06F2212/657
Abstract: A virtual memory is partitioned into virtual partitions, each partition being subdivided into virtual sub-partitions and each sub-partition corresponding to a combination of multiple sectors of identical or different sizes of a physical memory. When an allocation request is made for a virtual memory space having a given memory size, a free partition is selected, a virtual sub-partition is selected corresponding to a combination of sectors having a minimum total size covering the given memory size of the virtual memory to be allocated, and free sectors of the physical memory are selected corresponding to the selected combination. A determination is made of a correspondence table between the selected virtual partition and the initial physical addresses of the selected free sectors, and a virtual address is generated.
-
239.
公开(公告)号:US20170163291A1
公开(公告)日:2017-06-08
申请号:US15140997
申请日:2016-04-28
Applicant: STMicroelectronics (Rousset) SAS
Inventor: Francesco La Rosa , Gineuve Alieri
CPC classification number: G11C29/52 , G06F11/1048 , G06F11/1068 , G11C29/4401 , G11C29/70 , G11C29/72 , G11C29/76 , G11C29/82 , G11C2029/0409 , H03M13/2906
Abstract: A method can be used for managing the operation of a non-volatile memory equipped with a system for correction of a single error and for detection of a double error. In the case of the detection of a defective bit line of the memory plane, a redundant bit line is assigned and the values of the bits of the memory cells of the defective line are copied into the memory cells of the redundant line and are inverted in the case of the detection of double errors by the system, or corrected by the system in the presence of single errors.
-
公开(公告)号:US09661448B2
公开(公告)日:2017-05-23
申请号:US14956501
申请日:2015-12-02
Applicant: STMICROELECTRONICS (ROUSSET) SAS
Inventor: Alexandre Charles
IPC: H04B5/00 , H04W4/00 , H04L9/08 , G06K7/10 , H04L12/933
CPC classification number: H04W4/008 , G06K7/10237 , H04B5/00 , H04B5/0031 , H04B5/0056 , H04L49/102 , H04W4/80
Abstract: A method is for managing information communication between an NFC controller coupled to an antenna for a contactless communication with an object, a device host, and a secure element. The method may include routing the information through the NFC controller, and communicating first information to be communicated between the secure element and the device host through a first communication link between the NFC controller and the device host, and through a second communication link between the NFC controller and the secure element. The method may include communicating second information with the antenna through a third communication link between the NFC controller and the secure element, the first and second communication links having bandwidths greater than a bandwidth of the third communication link.
-
-
-
-
-
-
-
-
-