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    PHOTOSENSOR SUBSTRATE
    253.
    发明申请
    PHOTOSENSOR SUBSTRATE 审中-公开

    公开(公告)号：US20180061876A1

    公开(公告)日：2018-03-01

    申请号：US15565256

    申请日：2016-04-05

    Applicant: SHARP KABUSHIKI KAISHA

    Inventor： TADAYOSHI MIYAMOTO

    IPC: H01L27/146 ,  G01T1/24 ,  G01T7/00

    CPC classification number: H01L27/14614 ,  G01T1/241 ,  G01T7/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/14616 ,  H01L27/14623 ,  H01L27/14663 ,  H01L27/14689 ,  H01L29/786 ,  H01L29/7869 ,  H01L31/10

    Abstract: A photosensor substrate achieves TFT property stabilization and further improvement in sensor performance. The photosensor substrate includes a substrate 7, a photoelectric transducer 4, and a transistor 2. The transistor 2 includes a semiconductor layer 22, a drain electrode 23 and a source electrode 21 facing each other in a direction parallel to a plane of the substrate with the semiconductor layer 22 interposed therebetween, a gate insulating film 15 covering the semiconductor layer 22, the drain electrode 23, and the source electrode 21, and a gate electrode 24 facing the semiconductor layer 22 with the gate insulating film 15 interposed therebetween. The photoelectric transducer 4 includes a lower electrode 41 connected to the drain electrode 23 via a contact hole CH1 provided in the gate insulating film 15, a semiconductor film 42, and an upper electrode 43.

    DETECTION DEVICE
    256.
    发明申请
    DETECTION DEVICE 审中-公开

    公开(公告)号：US20170315244A1

    公开(公告)日：2017-11-02

    申请号：US15528102

    申请日：2015-11-16

    Applicant: Sharp Kabushiki Kaisha

    Inventor： KAZUATSU ITO ,  SHIGEYASU MORI ,  TADAYOSHI MIYAMOTO ,  KAORU YAMAMOTO

    IPC: G01T1/24 ,  H01L31/02 ,  H01L31/032 ,  H01L31/119

    CPC classification number: G01T1/24 ,  H01L27/144 ,  H01L27/146 ,  H01L29/786 ,  H01L31/02019 ,  H01L31/032 ,  H01L31/085 ,  H01L31/119 ,  H04N5/32

    Abstract: The invention provides a detection device including a fewer types of elements for detection of radial rays and configured to appropriately detect the radial rays. A detection device 1 includes a light source 30 configured to emit radial rays, a detection circuit board 10 provided with a plurality of detection circuits each configured to output a signal according to a control signal supplied from a driving circuit 201, and a signal reading circuit 202 configured to acquire the signals outputted from the plurality of detection circuits. The detection circuits each include a detection thin film transistor having threshold voltage varied in accordance with irradiation of the radial rays. The signal reading circuit 202 transmits, to an image processing device 40, a difference between a signal outputted from each of the detection circuits in accordance with a control signal supplied before irradiation of the radial rays and a signal outputted from the detection circuit in accordance with a control signal supplied after irradiation of the radial rays.

    Process for manufacturing a photonic circuit with active and passive structures
    257.
    发明授权
    Process for manufacturing a photonic circuit with active and passive structures 有权

    公开(公告)号：US09799791B2

    公开(公告)日：2017-10-24

    申请号：US14595663

    申请日：2015-01-13

    Applicant: Huawei Technologies Co., Ltd.

    Inventor： Tom Collins

    IPC: H01L21/00 ,  H01L31/18 ,  G02B6/13 ,  G02B6/132 ,  G02B6/136 ,  H01L27/144 ,  H01L31/0232

    CPC classification number: H01L31/1804 ,  G02B6/13 ,  G02B6/132 ,  G02B6/136 ,  H01L27/144 ,  H01L31/02327

    Abstract: A process for manufacturing a photonic circuit comprises: manufacturing on a first wafer a first layer stack comprising an underclad oxide layer and a high refractive index waveguide layer; patterning the high refractive index waveguide layer to generate a passive photonic structures; planarizing the first layer stack with a planarizing oxide layer having a thickness below 300 nanometers above the high refractive index waveguide layer; annealing the patterned high refractive index waveguide layer before and/or after the planarizing oxide layer; manufacturing on a second wafer a second layer stack comprising a detachable mono-crystalline silicon waveguide layer; transferring and bonding the first layer stack and the second layer stack; manufacturing active photonic devices in the mono-crystalline silicon waveguide layer; and realizing evanescent coupling between the mono-crystalline silicon waveguide layer and the high refractive index waveguide layer.

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