METHOD FOR PROCESSING WIDE-BANDGAP SEMICONDUCTOR SUBSTRATE AND APPARATUS THEREFOR
    270.
    发明申请
    METHOD FOR PROCESSING WIDE-BANDGAP SEMICONDUCTOR SUBSTRATE AND APPARATUS THEREFOR 审中-公开
    用于处理宽带半导体衬底的方法及其装置

    公开(公告)号:US20170069506A1

    公开(公告)日:2017-03-09

    申请号:US15125308

    申请日:2015-03-11

    Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.

    Abstract translation: 提供了一种用于宽带隙半导体衬底的处理方法及其不使用研磨剂或不含磨粒的设备,或者根本没有使用具有大的环境负担的溶液可以处理单晶,SiC,GaN,AlGaN 或AlN以各种加工速度,可以获得比通过CMP完成的表面的质量更高质量的表面,并且还具有与洁净室良好的相容性。 使用具有促进工件(5)的直接水解或促进工件表面上的氧化膜的水解的功能的催化物质作为加工基准面(3)。 在水(1)的存在下,工件在预定压力下与处理参考平面接触或非常接近。

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