公开(公告)号：US09356090B2

公开(公告)日：2016-05-31

申请号：US14640705

申请日：2015-03-06

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Vincent Fiori ,  Sebastien Gallois-Garreignot ,  Denis Rideau ,  Clement Tavernier

IPC: H01L29/04 ,  H01L29/78

CPC classification number: H01L29/045 ,  H01L23/522 ,  H01L29/7845 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.

Abstract translation: 衬底包括沿结晶面（100）取向并被绝缘区域限制的有源区。 MOS晶体管包括沿着<110>型晶体方向纵向取向的通道。 由金属形成并形成为T形状的基本图案是电惰性的，并且位于与通道的横向端部相邻的绝缘区域的区域上。 T形基本图案的水平分支基本上平行于通道的纵向定向。

公开(公告)号：US20160118431A1

公开(公告)日：2016-04-28

申请号：US14840164

申请日：2015-08-31

Applicant: STMicroelectronics SA

Inventor： Didier DUTARTRE

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L21/7624 ,  H01L21/76264 ,  H01L27/1203 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: A front-side image sensor may include a substrate in a semiconductor material and an active layer in the semiconductor material. The front side image sensor may also include an array of photodiodes formed in the active layer and an insulating layer between the substrate and the active layer.

Abstract translation: 前侧图像传感器可以包括半导体材料中的衬底和半导体材料中的有源层。 前侧图像传感器还可以包括在有源层中形成的光电二极管的阵列以及衬底和有源层之间的绝缘层。

公开(公告)号：US20160099823A1

公开(公告)日：2016-04-07

申请号：US14505052

申请日：2014-10-02

Applicant: STMicroelectronics SA

Inventor： Fatima Barrami

IPC: H04L27/26

CPC classification number: H04L27/2628 ,  H04B10/548 ,  H04B10/69 ,  H04L27/2096 ,  H04L27/2697

Abstract: An OFDM (orthogonal frequency division multiplexing) transmitter includes an inverse fast Fourier transform circuit, which, in operation, generates, based on digital input data, a complex time-varying digital signal having real and imaginary components; and a multiplexer adapted to generate a time-multiplexed digital signal by time-multiplexing one or more of the real components with one or more of the imaginary components.

Abstract translation: OFDM（正交频分复用）发射机包括逆快速傅里叶变换电路，其在操作中基于数字输入数据产生具有实部和虚部分的复数时变数字信号; 以及多路复用器，其适于通过用一个或多个虚构分量对一个或多个实部进行时分多路复用的数字信号。

公开(公告)号：US20160099334A1

公开(公告)日：2016-04-07

申请号：US14970341

申请日：2015-12-15

Applicant: STMicroelectronics SA

Inventor： Alain Chantre ,  Pascal Chevalier ,  Gregory Avenier

IPC: H01L29/66 ,  H01L21/8249

CPC classification number: H01L29/66272 ,  H01L21/8249 ,  H01L27/1203 ,  H01L29/1004 ,  H01L29/66234 ,  H01L29/66242 ,  H01L29/66265 ,  H01L29/73 ,  H01L29/7317 ,  H01L29/7322 ,  H01L29/7371

Abstract: A method for manufacturing a bipolar transistor, including the steps of: forming a first surface-doped region of a semiconductor substrate having a semiconductor layer extending thereon with an interposed first insulating layer; forming, at the surface of the device, a stack of a silicon layer and of a second insulating layer; defining a trench crossing the stack and the semiconductor layer opposite to the first doped region, and then an opening in the exposed region of the first insulating layer; forming a single-crystal silicon region in the opening; forming a silicon-germanium region at the surface of single-crystal silicon region, in contact with the remaining regions of the semiconductor layer and of the silicon layer; and forming a second doped region at least in the remaining space of the trench.

公开(公告)号：US20160020524A1

公开(公告)日：2016-01-21

申请号：US14869811

申请日：2015-09-29

Applicant: STMICROELECTRONICS SA

Inventor： Jean-Francois Carpentier ,  Sébastien Pruvost ,  Patrice Garcia ,  Pierre Busson ,  Pierre Dautriche

IPC: H01Q19/185 ,  H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H01Q19/10 ,  H01Q19/00

CPC classification number: H01Q21/0087 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/552 ,  H01L23/66 ,  H01L24/13 ,  H01L2223/6677 ,  H01L2224/1319 ,  H01L2224/13582 ,  H01L2224/16225 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01Q19/005 ,  H01Q19/10 ,  H01Q19/185 ,  H01Q21/0025 ,  H01Q21/0093 ,  H01Q23/00 ,  H01L2924/00

Abstract: A millimeter wave transceiver including a plate forming an interposer having its upper surface supporting an interconnection network and having its lower surface intended to be assembled on a printed circuit board by bumps; an integrated circuit chip assembled on the upper surface of the interposer; antennas made of tracks formed on the upper surface of the interposer; and reflectors on the upper surface of the printed circuit board in front of each of the antennas, the effective distance between each antenna and the reflector plate being on the order of one quarter of the wavelength, taking into account the dielectric constants of the interposed materials.

Abstract translation: 一种毫米波收发器，包括形成插入件的板，其具有支撑互连网络的上表面，并且其下表面旨在通过凸块组装在印刷电路板上; 组装在所述插入件的上表面上的集成电路芯片; 由形成在插入件的上表面上的轨道制成的天线; 以及在每个天线前面的印刷电路板的上表面上的反射器，考虑到插入材料的介电常数，每个天线和反射板之间的有效距离在波长的四分之一左右 。

公开(公告)号：US20150364520A1

公开(公告)日：2015-12-17

申请号：US14738529

申请日：2015-06-12

Applicant: STMicroelectronics SA

Inventor： Didier Dutartre

IPC: H01L27/146

CPC classification number: H01L31/02327 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/042

Abstract: The disclosure relates to an image sensor comprising a substrate region in a semiconductor material; an active layer in contact with the substrate region; and a photodiode array formed in the active layer. The substrate region has a doping level such that the resistivity of the substrate region is less than 6 mOhm•cm.

Abstract translation: 本公开涉及一种包括半导体材料中的衬底区域的图像传感器; 与所述衬底区域接触的有源层; 以及形成在有源层中的光电二极管阵列。 衬底区域具有使得衬底区域的电阻率小于6mOhm·cm的掺杂水平。

公开(公告)号：US09165861B2

公开(公告)日：2015-10-20

申请号：US14287343

申请日：2014-05-27

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Pierre Bar ,  Simon Gousseau ,  Yann Beilliard

IPC: H01L23/427 ,  H01L23/48 ,  H01L21/768 ,  H01L23/367 ,  H01L23/00

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/3677 ,  H01L23/4275 ,  H01L24/16 ,  H01L24/73 ,  H01L2224/16235 ,  H01L2224/73204

Abstract: A method for producing at least one through-silicon via inside a substrate may include forming a cavity in the substrate from a first side of the substrate until an electrically conductive portion is emerged onto. The method may also include forming an electrically conductive layer at a bottom and on walls of the cavity, and at least partly on a first side outside the cavity. The process may further include at least partially filling the cavity with at least one phase-change material. Another aspect is directed to a three-dimensional integrated structure.

Abstract translation: 用于在衬底内部生产至少一个穿硅的方法可包括在衬底的第一侧从衬底的第一侧形成空腔，直到导电部分出现。 该方法还可以包括在空腔的底部和壁上形成导电层，并且至少部分地在空腔外部的第一侧上形成导电层。 该方法还可以包括用至少一种相变材料至少部分地填充空腔。 另一方面涉及三维综合结构。

公开(公告)号：US20150279834A1

公开(公告)日：2015-10-01

申请号：US14638292

申请日：2015-03-04

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Robert MANOUVRIER ,  Estelle Batail

IPC: H01L27/02 ,  G02B6/122

CPC classification number: G02B6/122 ,  G02B6/4275 ,  G02B6/4295 ,  H01L27/0248 ,  H01L29/74

Abstract: A thyristor may include a first optical waveguide segment in a semiconductor material, having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. The thyristor may further include a second optical waveguide segment in a semiconductor material, adjacent the first waveguide segment and having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. A transverse bipolar junction may be between the second longitudinal portions of the first and second waveguide segments. An electrical insulator may separate each of the first longitudinal portions from the waveguide segment adjacent thereto.

Abstract translation: 晶闸管可以包括半导体材料中的第一光波导段，其具有构造为在其间形成纵向双极结的相反导电类型的第一和第二互补纵向部分。 晶闸管可以进一步包括半导体材料中的第二光波导段，邻近第一波导段并且具有构造成在其间形成纵向双极结的相反导电类型的第一和第二互补纵向部分。 横向双极结可以在第一和第二波导段的第二纵向部分之间。 电绝缘体可以将每个第一纵向部分与与其相邻的波导段分开。

公开(公告)号：US20150277038A1

公开(公告)日：2015-10-01

申请号：US14656981

申请日：2015-03-13

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Robert MANOUVRIER ,  Patrick LEMAITRE ,  Jean-Francois CARPENTIER

IPC: G02B6/12 ,  G02B6/13

CPC classification number: G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  H01L29/74

Abstract: An optical waveguide in a semiconductor material, may include, between two adjacent portions of the waveguide, a plurality of parallel strips of alternating conductivity types forming a plurality of opposing bipolar junctions between the two adjacent portions.

Abstract translation: 在半导体材料中的光波导可以包括在波导的两个相邻部分之间的多个交替导电类型的平行条带，在两个相邻部分之间形成多个相对的双极结。

公开(公告)号：US20150255705A1

公开(公告)日：2015-09-10

申请号：US14634454

申请日：2015-02-27

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Emilie Trioux ,  Pascal Ancey ,  Stephane Monfray ,  Thomas Skotnicki ,  Skandar Basrour ,  Paul Muralt

IPC: H01L41/27 ,  C23C4/10 ,  C23C4/12 ,  H01L41/08 ,  F03G7/06

CPC classification number: H01L41/27 ,  B32B15/01 ,  C22F1/00 ,  C23C4/10 ,  C23C4/134 ,  C23C10/12 ,  F03G7/06 ,  H01L41/0805 ,  H01L41/0815 ,  H01L41/33 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49124

Abstract: A method of manufacturing bistable strips having different curvatures, each strip including a plurality of portion of layers of materials, wherein at least one specific layer portion is deposited by a plasma spraying method in conditions different for each of the strips.

Abstract translation: 制造具有不同曲率的双稳态条带的方法，每条条带包括多个材料层，其中至少一个特定层部分通过等离子体喷涂方法在对每个条带不同的条件下进行沉积。