公开(公告)号：US20130153962A1

公开(公告)日：2013-06-20

申请号：US13605135

申请日：2012-09-06

Applicant: Jae-Sik SIM ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Jae-Sik SIM ,  Kisoo Kim ,  Bongki Mheen ,  MyoungSook Oh ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01L31/107 ,  H01L31/18

CPC classification number: H01L31/107

Abstract: The inventive concept provides avalanche photo diodes and methods of manufacturing the same. The avalanche photo diode may include a substrate, a light absorption layer formed on the substrate, a clad layer formed on the light absorption layer, an active region formed in the clad layer, a guard ring region formed around the active region, and an insulating region formed between the guard ring region and the active region.

Abstract translation: 本发明的概念提供了雪崩光电二极管及其制造方法。 雪崩光电二极管可以包括基板，形成在基板上的光吸收层，形成在光吸收层上的包覆层，形成在包层中的有源区，形成在有源区周围的保护环区，绝缘 形成在保护环区域和有源区域之间的区域。

公开(公告)号：US20130134554A1

公开(公告)日：2013-05-30

申请号：US13618873

申请日：2012-09-14

Applicant: Seong-il KIM ,  Sang-Heung LEE ,  Jong-Won LIM ,  Hyung Sup YOON ,  Jongmin LEE ,  Byoung-Gue MIN ,  Jae Kyoung MUN ,  Eun Soo NAM

Inventor： Seong-il KIM ,  Sang-Heung LEE ,  Jong-Won LIM ,  Hyung Sup YOON ,  Jongmin LEE ,  Byoung-Gue MIN ,  Jae Kyoung MUN ,  Eun Soo NAM

IPC: H01L29/92 ,  H01L21/02

CPC classification number: H01L28/91 ,  H01L23/481 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate.

Abstract translation: 提供垂直电容器及其形成方法。 垂直电容器的形成可以包括在衬底的顶表面上形成输入和输出电极，蚀刻衬底的底表面以形成通孔电极，然后在通孔电极之间形成电介质层。 结果，可以在基板的小区域中提供具有高电容的垂直电容器。

公开(公告)号：US20120156826A1

公开(公告)日：2012-06-21

申请号：US13273257

申请日：2011-10-14

Applicant: Jae Sik SIM ,  Ki Soo KIM ,  Bong Ki MHEEN ,  Myoung Sook OH ,  Yong Hwan KWON ,  Eun Soo NAM

Inventor： Jae Sik SIM ,  Ki Soo KIM ,  Bong Ki MHEEN ,  Myoung Sook OH ,  Yong Hwan KWON ,  Eun Soo NAM

IPC: H01L31/18

CPC classification number: H01L31/107 ,  H01L31/184 ,  Y02E10/544

Abstract: A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

Abstract translation: 一种方法包括：依次在衬底表面上生长光吸收层，分级层，电场缓冲层和放大层，形成外延晶片; 在放大层上形成扩散控制层; 形成用于保护扩散控制层上的扩散控制层的保护层; 通过从保护层蚀刻到放大层的预定深度来形成蚀刻部分; 通过图案化所述保护层来形成第一图案形成部分; 通过使扩散材料扩散到所述蚀刻部分和所述第一图案形成部分，在所述放大层处形成接合区域和保护区域; 去除扩散控制层和保护层，并形成连接到放大层上的结区的第一电极; 以及在所述基板的后表面上形成第二电极。

公开(公告)号：US20120132792A1

公开(公告)日：2012-05-31

申请号：US13278196

申请日：2011-10-21

Applicant: Joong-Seon Choe ,  Jong-Hoi Kim ,  Chun Ju Youn ,  Duk Jun Kim ,  Kwang-Seong Choi ,  Yong-Hwan Kwon ,  Eun Soo Nam

Inventor： Joong-Seon Choe ,  Jong-Hoi Kim ,  Chun Ju Youn ,  Duk Jun Kim ,  Kwang-Seong Choi ,  Yong-Hwan Kwon ,  Eun Soo Nam

IPC: H01J40/14

CPC classification number: G02B6/1226 ,  B82Y20/00 ,  G02B6/12007 ,  G02B6/2813 ,  G02B6/4214

Abstract: An exemplary embodiment of the present disclosure provides an optical module including: an optical hybrid including a metal optical waveguide; a photo detector configured to receive light; and a platform including an optical hybrid supporting section for supporting the optical hybrid, a photo detector supporting section for supporting the photo detector, and an inclined surface configured to change a propagation direction of light emitted from the optical hybrid, and configured to combine the optical hybrid and the photo detector.

Abstract translation: 本公开的示例性实施例提供了一种光学模块，包括：包括金属光波导的光学混合; 被配置为接收光的光电检测器; 以及包括用于支撑光学混合物的光学混合支撑部分的平台，用于支撑光电检测器的光电检测器支撑部分和被配置为改变从光学混合物发射的光的传播方向的倾斜表面，并且被配置为组合光学 混合和光电检测器。

公开(公告)号：US20110133843A1

公开(公告)日：2011-06-09

申请号：US12960153

申请日：2010-12-03

Applicant: Seong-Il KIM ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Seong-Il KIM ,  Jongmin Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H03F3/68

CPC classification number: H03F3/245 ,  H03F1/0261 ,  H03F1/52 ,  H03F3/19 ,  H03F3/211 ,  H03F2200/18 ,  H03F2200/451

Abstract: Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.

Abstract translation: 提供了一种功率放大器装置。 功率放大器装置包括：切断单元，切断从信号输入端子发送的信号的直流（DC）分量; 连接到所述切断单元的电路保护单元，并且稳定从所述切断单元传送的信号; 以及放大单元，连接到所述电路保护单元并放大从所述电路保护单元传递的信号，其中所述放大单元包括与所述电路保护单元并联连接的多个晶体管，所述电路保护单元包括电阻器， 多个晶体管。

公开(公告)号：US20110049698A1

公开(公告)日：2011-03-03

申请号：US12764330

申请日：2010-04-21

Applicant: Woojin CHANG ,  Soon II Yeo ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Woojin CHANG ,  Soon II Yeo ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H01L23/538 ,  H01L23/02 ,  H01L21/50

CPC classification number: H01L23/5389 ,  H01L23/3107 ,  H01L24/83 ,  H01L24/90 ,  H01L25/03 ,  H01L2224/90 ,  H01L2924/00011 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2224/83851 ,  H01L2924/00

Abstract: A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal.

Abstract translation: 提供半导体封装。 半导体封装包括封装体，多个半导体芯片和外部连接端子。 封装体与设置有导电图案和通孔的多个片层叠。 多个半导体芯片被插入到从封装主体的一个表面延伸的插入槽中。 外部连接端子设置在与封装主体的一个表面相对的另一表面上。 这里，多个半导体芯片电连接到外部连接端子。

公开(公告)号：US07855094B2

公开(公告)日：2010-12-21

申请号：US12428575

申请日：2009-04-23

Applicant: Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

Inventor： Eun Soo Nam ,  Seon Eui Hong ,  Myoung Sook Oh ,  Yong Won Kim ,  Ho Young Kim ,  Bo Woo Kim

IPC: H01L21/00

CPC classification number: H01L27/14694 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14649 ,  H01L27/14687

Abstract: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

Abstract translation: 一种光电检测器，其中用于连接电极的金属布线布置在平坦化表面上，从而简化了金属布线布置，并提供了其制造方法。 光检测器包括形成在化合物半导体衬底上的多层化合物半导体层。 在化合物半导体层的选定区域中以规则的顺序布置多个p-n结二极管，并且通过在多层化合物半导体层中注入杂质离子来形成用于单独隔离p-n结二极管的隔离区域。 隔离区域和化合物半导体层的表面位于同一水平。 隔离区域可以是Fe杂质区域。

公开(公告)号：US07638856B2

公开(公告)日：2009-12-29

申请号：US11872137

申请日：2007-10-15

Applicant: Eun Soo Nam ,  Yong Won Kim ,  Seon Eui Hong ,  Myung Sook Oh ,  Bo Woo Kim

Inventor： Eun Soo Nam ,  Yong Won Kim ,  Seon Eui Hong ,  Myung Sook Oh ,  Bo Woo Kim

IPC: H01L29/00

CPC classification number: H01L31/18 ,  B82Y20/00 ,  G02F1/017

Abstract: Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

Abstract translation: 提供了一种光电（OE）发射器集成电路（IC）及其使用选择性生长工艺制造它的方法。 在OE发射机IC中，包括双异质结双极晶体管（DHBT）的驱动电路并放大接收的电信号以驱动电吸收（EA）调制器，并且具有多量子阱（MQW）吸收层的EA调制器是 在半绝缘基板上集成为单芯片。 EA调制器的MQW吸收层和DHBT的MQW插入层使用选择性MOCVD生长工艺彼此形成为不同的厚度。

公开(公告)号：US20050170549A1

公开(公告)日：2005-08-04

申请号：US11012699

申请日：2004-12-16

Applicant: Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Hong ,  Kyoung Ik Cho

Inventor： Eun Soo Nam ,  Ho Young Kim ,  Myoung Sook Oh ,  Dong Yun Jung ,  Seon Hong ,  Kyoung Ik Cho

IPC: H01L21/331 ,  H01L31/109 ,  H01L31/11 ,  H01L21/00 ,  H01L29/732 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC classification number: H01L29/66318 ,  H01L31/109 ,  H01L31/1105

Abstract: Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

Abstract translation: 提供一种制造光电集成电路芯片的方法。 特别地，提供了一种制造光电集成电路芯片的方法，其中通过使用选择区域，波导型光学检测器的光吸收层生长成比异质结双极晶体管的集电极层厚 通过金属有机化学气相沉积（MOCVD）方法的生长，波导型光检测器和异质结双极晶体管作为单芯片集成在半绝缘InP衬底上，从而容易实现波导型光 检测器提高了量子效率并具有超高速特性。

公开(公告)号：US08742316B2

公开(公告)日：2014-06-03

申请号：US12942338

申请日：2010-11-09

Applicant: Kisoo Kim ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

Inventor： Kisoo Kim ,  Eun Soo Nam ,  Jae-Sik Sim ,  Yong-Hwan Kwon ,  Bongki Mheen ,  Myungsook Oh

IPC: G01J1/44

CPC classification number: G01J1/46

Abstract: Provided is a photo detector. The photo detector includes: an avalanche photodiode; a bias circuit supplying a bias voltage to one end of the avalanche photodiode; a detection circuit connected to the other end of the avalanche photodiode and detecting a photoelectric current occurring in the avalanche photodiode; and a coupling capacitor connected to the one end or the other end of the avalanche photodiode and supplying a coupling voltage to drive the avalanche photodiode in a Geiger mode.

Abstract translation: 提供了一种光电检测器。 光电检测器包括：雪崩光电二极管; 将偏置电压提供给雪崩光电二极管的一端的偏置电路; 连接到雪崩光电二极管的另一端并检测在雪崩光电二极管中出现的光电流的检测电路; 以及耦合电容器，其连接到雪崩光电二极管的一端或另一端并提供耦合电压以以盖革模式驱动雪崩光电二极管。