Abstract:
Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).
Abstract:
Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of functionalized nanaparticles on a substrate by immersing the substrate in at least one of a solvent and a polymer matrix, wherein at least one of the solvent and the polymer matrix comprises a plurality of functionalized nanoparticles; and forming a second layer of functionalized nanoparticles on the first layer of functionalized particles, wherein there is a gradient in a property between the first layer and the second layer.
Abstract:
A multiple die structure includes a first die (110), a second die (120), a carbon nanotube (130) having a first end (131) in physical contact with the first die and having a second end (132) in physical contact with the second die, and an electrically conductive material (240) in physical contact with the first end of the carbon nanotube and in physical contact with the first die. Forming a connection between the first die and the second die can include providing a connection structure (400, 500, 600, 900) in which the electrically conductive material is adjacent to the carbon nanotube, placing the connection structure adjacent to the first die and to the second die, and bonding the first die and the second die to the connection structure.
Abstract:
Embodiments of an apparatus and methods of forming interconnect between a workpiece and substrate and its application to packaging of microelectronic devices are described herein. Other embodiments may be described and claimed.
Abstract:
A method of forming an interconnect joint includes providing a first metal layer (210, 310), providing a film (220, 320) including metal particles (221, 321) and organic molecules (222, 322), placing the film over the first metal layer, placing a second metal layer (230, 330) over the film, and sintering the metal particles such that the organic molecules degrade and the first metal layer and the second metal layer are joined together.
Abstract:
Methods for forming traces/lines and interconnects on substrates and devices and systems thereof of herein disclosed. In some embodiments, an activator layer is deposited on a surface of a substrate. Pick-up lithography using a pre-patterned lithographic stamp, ultraviolet lithography or like methods are used to selectively remove portions of the activator layer to form a pattern on the surface of the substrate. Electroless metal deposition is then applied to the surface of the substrate to form a metal pattern selectively on the remaining activator layer. Electroless plating can then be used to form traces/lines and interconnects in dimensions of less than 10 micrometers.