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公开(公告)号：US06388696B1
公开(公告)日：2002-05-14
申请号：US09084324
申请日：1998-05-27
IPC分类号： B41J245
CPC分类号： B41J2/45 , H01L24/06 , H01L27/153 , H01L2224/04042 , H01L2224/0603 , H01L2224/45144 , H01L2224/48465 , H01L2224/49107 , H01L2224/49109 , H01L2924/12036 , H01L2924/12041 , H01L2924/00
摘要： According to the present invention, a plurality of p-type semiconductor layers 13 are formed in a single row and a first layer insulating film 12 having first opening portions 16a and an n-side opening portion 17 is formed on the layers in an n-type semiconductor block 11. On the first layer insulating film 12, p-side electrodes 14 to connect to the p-type semiconductor layers 13 at the first opening portions 16a and an n-side electrode 55 (an n-side contact electrode 55a and an n-side pad electrode 55b) to connect with the n-type semiconductor block 11 at the n-side opening portion 17 are formed. Furthermore, p-side common wirings 4 to connect with specific p-side electrodes 14 are formed via a second layer insulating film 18. The p-side electrodes 14 and the n-side electrode 55 are formed using the same conductive film material through a single film formation and patterning process. An Au alloy film, for instance, may be used to form the conductive film that is to constitute the p-side electrodes 14 and the n-side electrode 55.
摘要翻译： 根据本发明，多个p型半导体层13形成为单列，并且在n型层中的层上形成具有第一开口部分16a和n侧开口部分17的第一层绝缘膜12， 在第一层绝缘膜12上，在第一开口部16a和n侧电极55（n侧接触电极55a和n侧电极55）连接到p型半导体层13的p侧电极14 形成与n侧开口部17处的n型半导体块11连接的n侧焊盘电极55b）。 此外，通过第二层绝缘膜18形成与特定p侧电极14连接的p侧公共配线4.P侧电极14和n侧电极55使用相同的导电膜材料通过 单膜形成和图案化工艺。 例如，可以使用Au合金膜来形成构成p侧电极14和n侧电极55的导电膜。
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22.发明授权公开(公告)号：US06384429B1
公开(公告)日：2002-05-07
申请号：US09348562
申请日：1999-07-07
IPC分类号： H01L3300
CPC分类号： H01L33/305 , H01L33/38 , H01L33/40
摘要： In one aspect of the invention, a light-emitting semiconductor device has a light-emitting layer with a certain bandgap energy, an upper cladding layer with a higher bandgap energy, a first diffusion area extending into the light-emitting layer, a second diffusion area extending only into the upper cladding layer, and an electrode making contact with the second diffusion area, without covering any part of the first diffusion area. The second diffusion area conducts current to the first diffusion area, where light is emitted from a pn junction in the light-emitting layer. In another aspect of the invention, a semiconductor contact layer is provided to assure ohmic contact with the electrode, and the semiconductor contact layer is removed from the light-emitting area, avoiding absorption of light.
摘要翻译： 在本发明的一个方面中，发光半导体器件具有一定带隙能量的发光层，具有较高带隙能量的上覆层，延伸到发光层中的第一扩散区域，第二扩散层 区域仅延伸到上包层，以及与第二扩散区接触的电极，而不覆盖第一扩散区的任何部分。 第二扩散区域将电流传导到第一扩散区域，其中光从发光层中的pn结发射。 在本发明的另一方面，提供半导体接触层以确保与电极的欧姆接触，并且半导体接触层从发光区域移除，避免吸收光。
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23.发明授权Light emitting element array chip, light emitting element array drive IC and print head 失效发光元件阵列芯片，发光元件阵列驱动IC和打印头公开(公告)号：US06172701B2
公开(公告)日：2001-01-09
申请号：US09106088
申请日：1998-06-29
IPC分类号： B41J247
CPC分类号： G06K15/1247 , B41J2/45
摘要： To achieve a reduction in the size of the print head and a reduction in the cost, LED array chips 1 achieved by matrix-connecting M×N LED elements 2 with M pad electrodes to be scanned 4 and N pad electrodes to be driven 3 and LED array drive ICs 10 are mounted at a mounting substrate 41. The pad electrodes to be driven 3 are connected with drive pad electrodes 16 and the pad electrodes to be scanned 4 are connected with scan pad electrodes 17 through wires 42a and 42b respectively. The pad electrodes to be driven 3 and the pad electrodes to be scanned 4 are provided in a single row along one side or edge of the lengthwise side of the chip. The LED array drive ICs 10 are provided with a scan control unit that sequentially validates the M pad electrodes to be scanned 4 one at a time based upon a scan signal and a data control unit that supplies drive currents to the N pad electrodes to be driven 3 in conformance to individual sets of data to cause N LED elements 2 connected with a valid pad electrode to be scanned 4 to emit light, each time the valid pad electrode to be scanned 4 is switched.
摘要翻译： 为了实现打印头的尺寸的减小和成本的降低，通过矩阵连接MxN LED元件2与要扫描的M个焊盘电极4和要驱动的N个焊盘电极3和LED阵列实现的LED阵列芯片1 驱动IC 10安装在安装基板41上。待驱动的焊盘电极3与驱动焊盘电极16连接，并且待扫描的焊盘电极4分别通过导线42a和42b连接到扫描焊盘电极17。 待驱动的焊盘电极3和待扫描的焊盘电极4沿着芯片的纵向侧的一侧或边缘设置成单行。 LED阵列驱动IC10设置有扫描控制单元，其基于扫描信号和数据控制单元一次一个地依次验证要扫描的M个焊盘电极，该驱动电流向N个焊盘电极提供驱动电流 3，以使得与有效焊盘电极连接的N个LED元件2被扫描4发光，每次要扫描的有效焊盘电极4被切换。
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公开(公告)号：US5997152A
公开(公告)日：1999-12-07
申请号：US929759
申请日：1997-09-15
IPC分类号： B41J2/45 , H01L25/075 , F21V21/00
CPC分类号： H01L25/0753 , B41J2/45 , H01L2924/0002 , Y10S257/91 , Y10S362/80
摘要： A light emitting element module is provided including a board and plural chips arranged in the form of an array on the board. Each chip includes at least one light emitting element having a light emitting function and/or a photosensing function. The chips are arranged on the board so that the upper surfaces of adjacent chips which are located opposite to the board are positionally displaced in the height direction of the chips by at least the distance corresponding to the thickness of the chips. This uneven chip arrangement in the height direction may be established by alternately arranging thicker chips and thinner chips on the board.
摘要翻译： 提供了一种发光元件模块，其包括板和在板上以阵列的形式布置的多个芯片。 每个芯片包括至少一个具有发光功能和/或感光功能的发光元件。 芯片布置在板上，使得与芯片相对的相邻芯片的上表面在芯片的高度方向上位置移位至少对应于芯片的厚度的距离。 可以通过在板上交替地布置更厚的芯片和更薄的芯片来建立在高度方向上的这种不均匀的芯片布置。
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公开(公告)号：US5955748A
公开(公告)日：1999-09-21
申请号：US942302
申请日：1997-10-01
申请人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
发明人： Yukio Nakamura , Mitsuhiko Ogihara , Masumi Taninaka , Takao Kusano , Masumi Koizumi , Hiroyuki Fujiwara , Makoto Ishimaru , Masaharu Nobori , Tsutomu Nomoto
IPC分类号： B41J2/44 , B41J2/45 , B41J2/455 , H01L21/301 , H01L33/00 , H01L33/08 , H01L33/20 , H01L33/30 , H01L33/36 , H01L33/44
CPC分类号： B41J2/45 , H01L33/0008 , H01L33/20 , H01L33/44 , H01L2224/48137 , H01L33/0095
摘要： An end facet light emitting type LED has a slanted light emitting side wall relative to a substrate surface. A method for manufacturing end facet light emitting type light emitting devices prevents the pn-junction regions of the devices from being damaged while a semiconductor wafer is diced to separate light emitting devices from one another. A recess is formed on the semiconductor wafer having a depth which is deeper than the pn-junction. A portion to be cut during dicing of the wafer is vertically and horizontally separated from the pn-junction regions, so that if cracks occur when the wafer is diced, the cracks do not affect the light emitting characteristics of the devices.
摘要翻译： 端面发光型LED相对于基板表面具有倾斜的发光侧壁。 一种用于制造端面发光型发光器件的方法防止了在将半导体晶片切割以将发光器件彼此分离的同时，器件的pn结区域被损坏。 在半导体晶片上形成有比pn结深的深度的凹部。 在切割晶片期间待切割的部分与pn结区域垂直和水平分离，使得如果在切割晶片时发生裂纹，则裂纹不会影响器件的发光特性。
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公开(公告)号：US5917227A
公开(公告)日：1999-06-29
申请号：US924832
申请日：1997-09-05
IPC分类号： H01L27/15 , H01L31/10 , H01L33/08 , H01L33/12 , H01L33/30 , H01L33/34 , H01L33/38 , H01L27/14
CPC分类号： H01L33/0008 , H01L27/153 , H01L33/0066
摘要： A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first compound semiconductor layer to the surface of the non-doped compound semiconductor layer, and provide separation into isolated block regions each containing an equal number of diffusion regions. A plurality of shared electrode lines are connected to the diffusion regions in a plurality of the block regions, in such a relationship that diffusion regions selected from each of the block regions are connected to a common shared electrode. At least a surface portion of the substrate is formed of silicon. The density of the diffusion regions can be increased without increasing the number of the electrode pads. Moreover, the substrate is free from breakage or cracks.
摘要翻译： 发光二极管阵列包括在衬底和第一化合物半导体层之间的非掺杂化合物半导体层。 多个隔离区域从第一化合物半导体层延伸到非掺杂化合物半导体层的表面，并且分离成各自包含相等数量的扩散区域的隔离区域。 多个共享电极线以多个块区域中的扩散区域连接，以从每个块区域中选出的扩散区域连接到公共共享电极的关系。 至少衬底的表面部分由硅形成。 可以增加扩散区域的密度而不增加电极焊盘的数量。 此外，基材没有断裂或裂纹。
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27.发明授权Diffusion mask and fabrication method for forming pn-junction elements in a compound semiconductor substrate 失效用于在化合物半导体衬底中形成pn结元件的扩散掩模和制造方法
公开(公告)号：US5700714A
公开(公告)日：1997-12-23
申请号：US588890
申请日：1996-01-19
CPC分类号： H01L33/0008 , H01L21/2258
摘要： A pn-junction element is formed in a compound semiconductor substrate by depositing an aluminum-nitride film on the surface of the substrate, patterning the aluminum-nitride film to form a diffusion mask, depositing a diffusion source film on the diffusion mask, diffusing an impurity from the diffusion source film into the substrate, and removing the diffusion source film with buffered hydrofluoric acid. Electrode lines can then be formed directly on the aluminum-nitride diffusion mask, which is not etched by buffered hydrofluoric acid.
摘要翻译： 在化合物半导体衬底中通过在衬底的表面上沉积氮化铝膜来形成pn结元件，对氮化铝膜进行图案化以形成扩散掩模，在扩散掩模上沉积扩散源膜，扩散 从扩散源膜到基板中的杂质，并用缓冲氢氟酸除去扩散源膜。 然后可以直接在不被缓冲氢氟酸腐蚀的氮化铝扩散掩模上形成电极线。
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28.发明申请公开(公告)号：US20050189547A1
公开(公告)日：2005-09-01
申请号：US11119805
申请日：2005-05-03
IPC分类号： H01L21/764 , H01L21/76 , H01L27/15 , H01L33/08 , H01L33/30 , H01L21/00 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： B41J2/45 , H01L27/153
摘要： According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
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29.发明授权Semiconductor light-emitting device with isolation trenches, and method of fabricating same 有权具有隔离沟槽的半导体发光器件及其制造方法公开(公告)号：US06909122B2
公开(公告)日：2005-06-21
申请号：US10374081
申请日：2003-02-27
IPC分类号： H01L21/764 , H01L21/76 , H01L27/15 , H01L33/08 , H01L33/30 , H01L29/207
CPC分类号： B41J2/45 , H01L27/153
摘要： According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion region, then forming trenches that divide the diffusion region into multiple regions, or by forming individual diffusion regions and then forming trenches between them. The trenches prevent overlap between adjacent light-emitting elements, regardless of their junction depth, enabling a high-density array to be fabricated while maintaining adequate junction depth.
摘要翻译： 根据本发明，发光半导体器件具有通过隔离沟槽分离的发光元件，优选在每个发光元件的两侧。 该器件可以通过形成单个带状扩散区域，然后形成将扩散区域分成多个区域的沟槽，或者通过形成各个扩散区域，然后在它们之间形成沟槽来制造。 沟槽防止相邻发光元件之间的重叠，而不管它们的结深度如何，使得能够制造高密度阵列同时保持足够的结深度。
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30.发明授权Light-emitting element array and fabrication method with separate light-emitting and current-conducting diffusion areas 有权发光元件阵列和具有分开的发光和导电扩散区域的制造方法
公开(公告)号：US6133588A
公开(公告)日：2000-10-17
申请号：US128856
申请日：1998-08-04
CPC分类号： H01L33/38 , H01L33/0008 , H01L33/40
摘要： A light-emitting element is formed in a semiconductor substrate having a semi-insulating upper layer and a conductive lower layer. An impurity is diffused into both layers, forming a light-emitting area by creating a pn junction in the lower layer. An additional current-conducting area is formed by diffusion of the impurity into the upper layer. An electrode is formed on the substrate, making electrical contact with the current-conducting area, but not covering any part of the light-emitting area. The current-conducting area carries current from the electrode to the light-emitting area.
摘要翻译： 在具有半绝缘上层和导电性下层的半导体衬底中形成发光元件。 杂质扩散到两层中，通过在下层中形成pn结而形成发光区域。 通过将杂质扩散到上层中形成另外的导电区域。 在基板上形成电极，与导电区域电接触，但不覆盖发光区域的任何部分。 导电区域将电流从电极传送到发光区域。
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