公开(公告)号：US06890850B2

公开(公告)日：2005-05-10

申请号：US10196498

申请日：2002-07-15

Applicant: Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

Inventor： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

IPC: C23C16/42 ,  C23C16/30 ,  C23C16/40 ,  C23C16/56 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Abstract translation: 提供了用于沉积氧掺杂介电层的方法。 氧掺杂介电层可用于阻挡层或硬掩模。 在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理 并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。 氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

公开(公告)号：US06596343B1

公开(公告)日：2003-07-22

申请号：US09557079

申请日：2000-04-21

Applicant: Himanshu Pokharna ,  Shankar Chandran ,  Srinivas D. Nemani ,  Chen-an Chen ,  Francimar Campana ,  Ellie Yieh ,  Li-Qun Xia

Inventor： Himanshu Pokharna ,  Shankar Chandran ,  Srinivas D. Nemani ,  Chen-an Chen ,  Francimar Campana ,  Ellie Yieh ,  Li-Qun Xia

IPC: C23C1600

CPC classification number: C30B29/06 ,  C23C16/40 ,  C23C16/452 ,  C30B25/02

Abstract: A method for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.

Abstract translation: 一种用于通过使羟基自由基与前体反应以使前体分解并形成沉积在基底上的膜来处理半导体衬底的方法。 在化学气相沉积反应器外部的羟基离子产生装置中生产的羟基与前体混合以形成羟基离子前体混合物。 将羟基离子前体混合物引入化学气相沉积反应器。

公开(公告)号：US20190051495A1

公开(公告)日：2019-02-14

申请号：US15879371

申请日：2018-01-24

Applicant: Qiwei Liang ,  Jie Zhou ,  Adib M. Khan ,  Gautam Pisharody ,  Guannan Chen ,  Chentsau Ying ,  Srinivas D. Nemani

Inventor： Qiwei Liang ,  Jie Zhou ,  Adib M. Khan ,  Gautam Pisharody ,  Guannan Chen ,  Chentsau Ying ,  Srinivas D. Nemani

IPC: H01J37/32 ,  C23C16/511 ,  H05H1/46 ,  C23C16/26

Abstract: A plasma reactor for processing a workpiece includes a chamber having a dielectric window, a workpiece support to hold a workpiece in the chamber, a rotary coupling comprising a stationary stage configured to be coupled to a microwave source and a rotatable stage having an axis of rotation, a microwave antenna and overlying the dielectric window of the chamber, a rotary actuator to rotate the microwave antenna, and a process gas distributor including a gas distribution ring surrounding the workpiece support. The microwave antenna includes at least one conduit coupled to the rotary stage. The gas distribution ring including a cylindrical chamber liner separating a circular conduit from the chamber and a plurality of apertures extending radially through the liner to connect the conduit to the chamber.

公开(公告)号：US20150380215A1

公开(公告)日：2015-12-31

申请号：US14849296

申请日：2015-09-09

Applicant: Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

Inventor： Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

IPC: H01J37/32

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract translation: 描述了低k介电膜图案的方法。 在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。 该方法还涉及用无氮等离子体工艺来修饰低k电介质层的暴露部分。 该方法还涉及通过远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分有选择性。

公开(公告)号：US09165783B2

公开(公告)日：2015-10-20

申请号：US14059996

申请日：2013-10-22

Applicant: Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

Inventor： Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

IPC: H01L21/302 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01L21/02126 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract translation: 描述了低k介电膜图案的方法。 在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。 该方法还涉及用无氮等离子体工艺来修饰低k电介质层的暴露部分。 该方法还涉及通过远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分有选择性。

公开(公告)号：US20140273496A1

公开(公告)日：2014-09-18

申请号：US13889550

申请日：2013-05-08

Applicant: Chia-Ling Kao ,  Kwang-soo Kim ,  Sean S. Kang ,  Srinivas D. Nemani

Inventor： Chia-Ling Kao ,  Kwang-soo Kim ,  Sean S. Kang ,  Srinivas D. Nemani

IPC: H01L21/311

CPC classification number: H01L21/31144 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814 ,  H01L2221/1063

Abstract: Methods of removing metal hardmasks in the presence of ultra low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film includes forming a pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. The method also includes etching, using the metal nitride hardmask layer as a mask, the pattern at least partially into the low-k dielectric film, the etching involving using a plasma etch based on SiFx. The etching also involves forming an SiOx passivation layer at least on sidewalls of the low-k dielectric film formed during the etching. The method also includes removing the metal nitride hardmask layer by a dry etch process, where the SiOx passivation layer protects the low-k dielectric film during the removing.

Abstract translation: 描述了在超低k电介质膜存在下去除金属硬掩模的方法。 在一个示例中，图案化低k电介质膜的方法包括在形成在衬底上方的低k电介质膜上形成的金属氮化物硬掩模层中形成图案。 该方法还包括使用金属氮化物硬掩模层作为掩模的蚀刻，该图案至少部分地进入低k电介质膜，该蚀刻涉及使用基于SiFx的等离子体蚀刻。 蚀刻还包括至少在蚀刻期间形成的低k电介质膜的侧壁上形成SiO x钝化层。 该方法还包括通过干蚀刻工艺去除金属氮化物硬掩模层，其中SiO x钝化层在去除期间保护低k绝缘膜。

公开(公告)号：US20140262031A1

公开(公告)日：2014-09-18

申请号：US13893199

申请日：2013-05-13

Applicant: Sergey G. BELOSTOTSKIY ,  Alexander MARCACCI ,  Kartik RAMASWAMY ,  Srinivas D. NEMANI ,  Andrew NGUYEN ,  Yogananda SARODE

Inventor： Sergey G. BELOSTOTSKIY ,  Alexander MARCACCI ,  Kartik RAMASWAMY ,  Srinivas D. NEMANI ,  Andrew NGUYEN ,  Yogananda SARODE

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32091

Abstract: A multi-chambered processing platform includes one or more multi-mode plasma processing systems. In embodiments, a multi-mode plasma processing system includes a multi-mode source assembly having a primary source to drive an RF signal on a showerhead electrode within the process chamber and a secondary source to generate a plasma with by driving an RF signal on an electrode downstream of the process chamber. In embodiments, the primary 7 source utilizes RF energy of a first frequency, while the secondary source utilizes RF energy of second, different frequency. The showerhead electrode is coupled to ground through a frequency dependent filter that adequately discriminates between the first and second frequencies for the showerhead electrode to be RF powered during operation of the primary source, yet adequately grounded during operation of the secondary plasma source without electrical contact switching or reliance on physically moving parts.

Abstract translation: 多室处理平台包括一个或多个多模式等离子体处理系统。 在实施例中，多模式等离子体处理系统包括多模式源组件，该多模式源组件具有用于驱动处理室内的喷头电极上的RF信号的主要源，以及辅助源以通过在其上驱动RF信号来产生等离子体 电极在处理室的下游。 在实施例中，主7源使用第一频率的RF能量，而次级源利用第二频率的RF能量。 淋浴头电极通过频率相关的滤波器耦合到地面，该滤波器在初级源的操作期间充分地辨别喷头电极的第一和第二频率以进行RF供电，而在没有电接触切换的二级等离子体源的操作期间充分地接地 或依赖物理移动部件。

公开(公告)号：US08741775B2

公开(公告)日：2014-06-03

申请号：US13187224

申请日：2011-07-20

Applicant: Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

Inventor： Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

IPC: H01L21/3105

CPC classification number: H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

Abstract: Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract translation: 描述了低k介电膜图案的方法。 例如，一种方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。 低等离子体介质层的露出部分用等离子体工艺进行改性。 低k电介质层的修改部分被选择性地去除低k电介质层的掩模层和未修饰部分。

公开(公告)号：US20140120726A1

公开(公告)日：2014-05-01

申请号：US14059996

申请日：2013-10-22

Applicant: Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

Inventor： Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01L21/02126 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract translation: 描述了低k介电膜图案的方法。 在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。 该方法还涉及用无氮等离子体工艺来修饰低k电介质层的暴露部分。 该方法还涉及通过远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分有选择性。

公开(公告)号：US08647990B2

公开(公告)日：2014-02-11

申请号：US13653177

申请日：2012-10-16

Applicant: Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. Pender

Inventor： Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. Pender

IPC: H01L21/302

CPC classification number: H01L21/31138 ,  H01L21/3105 ,  H01L21/76814 ,  H01L2221/1063

Abstract: Methods of patterning low-k dielectric films are described.

Abstract translation: 描述了低k介电膜图案的方法。