公开(公告)号：US10908507B2

公开(公告)日：2021-02-02

申请号：US15910775

申请日：2018-03-02

Applicant: Applied Materials, Inc.

Inventor： Jang Fung Chen ,  Christopher Dennis Bencher

IPC: G03F7/20 ,  G02B27/10

Abstract: Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact illumination tools for projecting an image onto a substrate are provided. In one embodiment, an illumination tool includes a microLED array including one or more microLEDs. Each microLED produces at least one light beam. The illumination tool also includes a beamsplitter adjacent the microLED array, a camera adjacent the beamsplitter, and a projection optics system adjacent the beamsplitter.

公开(公告)号：US10559730B2

公开(公告)日：2020-02-11

申请号：US16369574

申请日：2019-03-29

Applicant: Applied Materials, Inc.

Inventor： Manivannan Thothadri ,  Christopher Dennis Bencher ,  Robert Jan Visser ,  John M. White

IPC: H01L33/58 ,  H01L27/15 ,  H01L25/065 ,  G02B27/22 ,  H04N13/307 ,  G02B17/00 ,  G02B3/00 ,  G02B5/04 ,  G02B19/00

Abstract: The present disclosure generally relates to light field displays and methods of displaying images with light field arrays. In one example, the present disclosure relates to pixel arrangements for use in light field displays. Each pixel includes a plurality of LEDs, such as micro LEDs, positioned adjacent respective micro-lenses of each pixel.

公开(公告)号：US09915621B2

公开(公告)日：2018-03-13

申请号：US15031690

申请日：2014-12-18

Applicant: Applied Materials, Inc.

Inventor： Majeed A. Foad ,  Christopher Dennis Bencher ,  Christopher G. Talbot ,  John Christopher Moran

IPC: G01N21/95 ,  G01N21/956

CPC classification number: G01N21/95 ,  G01N21/956 ,  G01N2021/95676 ,  G01N2201/061

Abstract: An extreme ultraviolet (EUV) substrate inspection system and method of manufacturing thereof, includes: an EUV source directing EUV illumination through an aperture; a light detector detecting mask illumination with reduced off axis rays reflected off from a substrate; and a computing device processing image data detected by the light detector.

公开(公告)号：US09646642B2

公开(公告)日：2017-05-09

申请号：US14170009

申请日：2014-01-31

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

IPC: G11B5/66 ,  G11B5/74 ,  G11B5/855 ,  G11B5/85

CPC classification number: G11B5/85 ,  G11B5/743 ,  G11B5/855

Abstract: A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

公开(公告)号：US09478421B2

公开(公告)日：2016-10-25

申请号：US14878514

申请日：2015-10-08

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis Bencher ,  Daniel Lee Diehl ,  Huixiong Dai ,  Yong Cao ,  Tingjun Xu ,  Weimin Zeng ,  Peng Xie

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311 ,  C23C14/00 ,  C23C14/06 ,  C23C14/14 ,  C23C14/35 ,  H01L21/308

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

公开(公告)号：US12243864B2

公开(公告)日：2025-03-04

申请号：US18511865

申请日：2023-11-16

Applicant: Applied Materials, Inc.

Inventor： Lisong Xu ,  Byung Sung Kwak ,  Mingwei Zhu ,  Hou T. Ng ,  Nag B. Patibandla ,  Christopher Dennis Bencher

IPC: H01L25/16 ,  H01L25/075 ,  H01L33/00 ,  H01L33/44 ,  H01L33/48 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L33/32

Abstract: A display screen includes a backplane, an array of light-emitting diodes electrically integrated with the backplane, the array of light-emitting diodes configured to emit UV light in a first wavelength range, and a plurality of isolation walls formed on the backplane between adjacent light-emitting diodes of the array of light-emitting diodes with the isolation walls spaced apart from the light-emitting diodes and extending above the light-emitting diodes. The plurality of isolation walls include a core of a first material and a coating covering at least a portion of the core extending above the light-emitting diodes. The coating is an opaque second material having transmittance less than 1% of light in the first wavelength range.

公开(公告)号：US20220357670A1

公开(公告)日：2022-11-10

申请号：US17740750

申请日：2022-05-10

Applicant: Applied Materials, Inc.

Inventor： Joseph R. Johnson ,  Christopher Dennis Bencher

IPC: G03F7/20

Abstract: Methods for patterning a substrate are described. A substrate is scanned using a spatial light modulator with a plurality of exposures timed according to a non-crystalline shot pattern. Lithography systems for performing the substrate patterning method and non-transitory computer-readable medium for executing the patterning method are also described.

公开(公告)号：US20220310872A1

公开(公告)日：2022-09-29

申请号：US17701599

申请日：2022-03-22

Applicant: Applied Materials, Inc.

Inventor： Lisong Xu ,  Byung Sung Kwak ,  Mingwei Zhu ,  Hou T. Ng ,  Nag B. Patibandla ,  Christopher Dennis Bencher

IPC: H01L33/00 ,  H01L33/48 ,  H01L33/58 ,  H01L25/075

Abstract: A method for manufacturing micro-LED displays includes depositing a first material over a substrate having a plurality of micro-LEDs such that the plurality of micro-LEDs are covered by the first material and the first material fills gaps laterally separating the micro-LEDs, removing a portion of the first material from the gaps that laterally separate the plurality of micro-LEDs to form trenches that extend to or below light-emitting layers of the micro-LEDs, depositing a second material over the substrate such that the second material covers the first material and extends into the trenches, and removing a portion of the first and second material over the plurality of micro-LEDs to expose top surfaces of the plurality of micro-LEDs and such that isolation walls positioned in the gaps between the plurality of micro-LEDs extend vertically higher than the top surface of the first material.

公开(公告)号：US10684555B2

公开(公告)日：2020-06-16

申请号：US15933147

申请日：2018-03-22

Applicant: Applied Materials, Inc.

Inventor： Joseph R. Johnson ,  Christopher Dennis Bencher

IPC: G03F7/20 ,  G03F7/00 ,  H01S5/30 ,  H01L27/15 ,  H01L33/32 ,  H01S5/40 ,  H01S5/026

Abstract: Embodiments of the present disclosure generally relate to an image projection system. The image projection system includes an active matrix solid state emitter (SSE) device. The active matrix solid state emitter includes a substrate, a silicon layer, and a emitter substrate. The silicon layer is deposited over the substrate having a plurality of transistors formed therein. The emitter substrate is positioned between the silicon layer and the substrate. The emitter substrate comprises a plurality of emitter arrays. Each emitter array defines a pixel, wherein one pixel comprises one or more transistors from the plurality of transistors. Each transistor is configured to receive a variable amount of current.

公开(公告)号：US10591815B2

公开(公告)日：2020-03-17

申请号：US16021350

申请日：2018-06-28

Applicant: Applied Materials, Inc.

Inventor： Joseph R. Johnson ,  Christopher Dennis Bencher ,  Thomas L. Laidig

IPC: G03F1/00 ,  G03F1/38 ,  H01L21/027 ,  G03F1/60 ,  G03F1/26

Abstract: Embodiments described herein provide a method shifting mask pattern data during a digital lithography process to reduce line waviness of an exposed pattern. The method includes providing a mask pattern data having a plurality of exposure polygons to a processing unit of a digital lithography system. The processing unit has a plurality of image projection systems that receive the mask pattern data. Each image projection system corresponds to a portion of a plurality of portions of a substrate and receives an exposure polygon corresponding to the portion. The substrate is scanned under the plurality of image projection systems and pluralities of shots are projected to the plurality of portions while shifting the mask pattern data. Each shot of the pluralities of shots is inside the exposure polygon corresponding to the portion.