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    Low Cost InGaAlN Based Lasers
    21.
    发明申请
    Low Cost InGaAlN Based Lasers 有权

    公开(公告)号：US20100091811A1

    公开(公告)日：2010-04-15

    申请号：US12637959

    申请日：2009-12-15

    Applicant: Alex A. Behfar ,  Wilfried Lenth

    Inventor： Alex A. Behfar ,  Wilfried Lenth

    IPC: H01S5/026 ,  H01S5/00

    CPC classification number: H01S5/0207 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4056 ,  H01S2301/18

    Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YD is larger than 50%.

    Simultaneous multiple silicon on insulator (SOI) wafer production
    22.
    发明授权
    Simultaneous multiple silicon on insulator (SOI) wafer production 有权
    同时多个绝缘体上硅（SOI）晶圆生产

    公开(公告)号：US06326285B1

    公开(公告)日：2001-12-04

    申请号：US09511165

    申请日：2000-02-24

    Applicant: Alex A. Behfar ,  Kris V. Srikrishnan

    Inventor： Alex A. Behfar ,  Kris V. Srikrishnan

    IPC: H01L2130

    CPC classification number: H01L21/76254

    Abstract: A method of forming multiple SOI wafers from a plurality of individual wafers each having a first side and a second side. The method includes forming an oxide surface on the first side on each of the plurality of individual wafers and forming a hydrogen rich region at a preselected depth on the second side on each of the plurality of individual wafers. The wafers are then bonded into a stacked configuration and heat treated to fracture the wafers at the hydrogen rich regions. This fracture forms at least two SOI wafers.

    Abstract translation: 一种从具有第一侧和第二面的多个单独晶片形成多个SOI晶片的方法。 该方法包括在多个单独晶片中的每一个上的第一侧上形成氧化物表面，并且在多个单个晶片中的每一个晶片上在第二侧的预选深度处形成富氢区域。 然后将晶片结合成堆叠构造并进行热处理以在富氢区域处断裂晶片。 该断裂形成至少两个SOI晶片。

    High density Z-axis connector
    23.
    发明授权
    High density Z-axis connector 失效
    高密度Z轴连接器

    公开(公告)号：US06174175B1

    公开(公告)日：2001-01-16

    申请号：US09301568

    申请日：1999-04-29

    Applicant: Alex A. Behfar ,  Dale Curtis McHerron ,  Charles Hampton Perry

    Inventor： Alex A. Behfar ,  Dale Curtis McHerron ,  Charles Hampton Perry

    IPC: H01R458

    CPC classification number: H01R12/714 ,  H01R2201/20

    Abstract: An electrical connector or interposer for making connection in a high density device electronic environment. The connector is made of a high density array of nickel columns held in a layer of polyimide with each column extending beyond the opposing surfaces of said layer of polyimide. The connector may be used to make temporary or permanent connection to electrical contacts without alignment. Connection may be accomplished by loading forces sufficient to form either an indentation or a penetration of solder ball contacts. Contact to a single chip or a full wafer of chips is facilitated for testing.

    Abstract translation: 一种用于在高密度设备电子环境中进行连接的电连接器或插入器。 连接器由保持在聚酰亚胺层中的高密度镍列阵列制成，每列延伸超过所述聚酰亚胺层的相对表面。 连接器可用于使电气触点临时或永久连接而不进行对准。 连接可以通过足以形成焊球接触的凹陷或穿透的负载力来实现。 接触单芯片或整片芯片便于进行测试。

    Low cost InGaAlN based lasers
    25.
    发明授权
    Low cost InGaAlN based lasers 有权
    低成本的InGaAlN基激光器

    公开(公告)号：US08290012B2

    公开(公告)日：2012-10-16

    申请号：US12637959

    申请日：2009-12-15

    Applicant: Alex A. Behfar ,  Wilfried Lenth

    Inventor： Alex A. Behfar ,  Wilfried Lenth

    IPC: H01S5/00

    CPC classification number: H01S5/0207 ,  G11B7/127 ,  G11B7/22 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/026 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4056 ,  H01S2301/18

    Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width w on top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively. The waveguide length and width are selected so that for a given defect density D, the yield YD is larger than 50%.

    Abstract translation: 用于产生具有良好的光学波前特征的激光器的方法和结构，例如光学存储所需要的，包括提供一种激光器，其中从激光器前刻面出射的输出光束基本上被半导体芯片的边缘阻挡，以防止有害的光束 扭曲。 半导体激光器结构在至少具有下包层，有源层，上覆层和接触层的基板上外延生长。 通过光刻定义的掩模的干蚀刻产生长度lc和宽度bm的激光台面。 使用光刻和蚀刻的另一序列来形成在台面顶部具有宽度w的脊结构。 蚀刻步骤还在激光波导结构的端部上形成反射镜或刻面。 芯片的长度ls和宽度bs可以分别选择等于或长于波导长度lc和台面宽度bm的方便值。 选择波导长度和宽度，使得对于给定的缺陷密度D，产量YD大于50％。

    LONG SEMICONDUCTOR LASER CAVITY IN A COMPACT CHIP
    26.
    发明申请
    LONG SEMICONDUCTOR LASER CAVITY IN A COMPACT CHIP 有权
    紧凑型芯片中的长半导体激光腔

    公开(公告)号：US20120099613A1

    公开(公告)日：2012-04-26

    申请号：US13281408

    申请日：2011-10-25

    Applicant: Alex A. Behfar ,  Christian Stagarescu

    Inventor： Alex A. Behfar ,  Christian Stagarescu

    IPC: H01S5/10

    CPC classification number: H01S5/10 ,  B82Y20/00 ,  H01S5/1003 ,  H01S5/1039 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/34313

    Abstract: Long semiconductor laser cavities are placed in relative short length chips through the use of total internal reflection (TIR) surfaces formed through etched facets. In one embodiment, a laser cavity is formed along the perimeter edges of a rectangular semiconductor chip by using three 45° angled TIR facets to connect four legs of a ridge or buried heterostructure (BH) waveguide that defines the laser cavity. In other embodiments, even more TIR facets and waveguide legs or sections are employed to make even longer laser cavities in the shape of rectangular or quadrilateral spirals. These structures are limited in the spacing of adjacent waveguide sections, which if too small, can cause undesirable coupling between the sections. However, use of notches etched between the adjacent sections have been shown to decrease this coupling effect.

    Abstract translation: 通过使用通过蚀刻刻面形成的全内反射（TIR）表面，将长半导体激光器腔放置在相对短的长度芯片中。 在一个实施例中，通过使用三个45°倾斜的TIR刻面来连接限定激光腔的脊或掩埋异质结构（BH）波导的四条腿，沿着矩形半导体芯片的周边边缘形成激光腔。 在其他实施例中，采用甚至更多的TIR刻面和波导腿或部分来制造矩形或四边形螺旋形的更长的激光腔。 这些结构在相邻波导部分的间隔上受到限制，如果太小，则可能导致部分之间的不期望的耦合。 然而，已经显示使用蚀刻在相邻部分之间的切口减小了这种耦合效应。

    Etched-facet ridge lasers with etch-stop
    28.
    发明授权
    Etched-facet ridge lasers with etch-stop 有权
    具有蚀刻停止的蚀刻面脊激光器

    公开(公告)号：US08009711B2

    公开(公告)日：2011-08-30

    申请号：US12567448

    申请日：2009-09-25

    Applicant: Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    Inventor： Alex A. Behfar ,  Alfred T. Schremer ,  Cristian B. Stagarescu

    IPC: H01S5/00

    CPC classification number: H01S5/22 ,  H01S5/209 ,  H01S5/2214

    Abstract: A photonic device incorporates an epitaxial structure having an active region, and which includes a wet etch stop layer above, but close to, the active region. An etched-facet ridge laser is fabricated on the epitaxial structure by dry etching followed by wet etching. The dry etch is designed to stop before reading the depth needed to form the ridge. The wet etch completes the formation of the ridge and stops at the wet etch stop layer.

    Abstract translation: 光子器件包含具有有源区的外延结构，并且其包括在活性区上方但接近于活性区的湿蚀刻停止层。 通过干法蚀刻然后进行湿蚀刻，在外延结构上制造蚀刻小面脊激光器。 干蚀刻被设计为在读取形成脊的所需深度之前停止。 湿蚀刻完成了脊的形成，并在湿蚀刻停止层处停止。

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