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公开(公告)号：US20070295602A1
公开(公告)日：2007-12-27
申请号：US11426775
申请日：2006-06-27
IPC分类号： C23C14/00
CPC分类号： H01J37/3405 , H01J37/32623 , H01J2237/0206 , H01J2237/026
摘要： The invention generally provides a ground shield for use in a physical vapor deposition (PVD) chamber. In one embodiment, a ground shield includes a generally cylindrical body comprising an outer wall, an inner upper wall, an inner lower wall having a diameter less than a diameter of the inner upper wall and a reentrant feature coupling the upper and inner lower walls. The reentrant feature advantageously prevents arching between the shield and target, which promotes greater process uniformity and repeatability along with longer chamber component service life.
摘要翻译： 本发明通常提供用于物理气相沉积（PVD）室的接地屏蔽。 在一个实施例中，接地屏蔽包括大致圆柱形的主体，其包括外壁，内上壁，直径小于内上壁的直径的内下壁和连接上下壁的可重入特征。 可折入特征有利于防止护罩和靶之间的拱形，这促进了更大的工艺均匀性和重复性以及更长的腔室部件使用寿命。
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22.发明授权Process kit for improved power coupling through a workpiece in a semiconductor wafer processing system 有权用于通过半导体晶片处理系统中的工件改善功率耦合的工艺套件公开(公告)号：US07163607B2
公开(公告)日：2007-01-16
申请号：US10804254
申请日：2004-03-19
申请人： Bradley O. Stimson , Mitsuhiro Kaburaki , John C. Forster , Eric Delaurentis , Praburam Gopalraja , Patricia Rodriguez , Anantha Subramani
发明人： Bradley O. Stimson , Mitsuhiro Kaburaki , John C. Forster , Eric Delaurentis , Praburam Gopalraja , Patricia Rodriguez , Anantha Subramani
CPC分类号： H01J37/32431
摘要： Apparatus for supporting a substrate such as a semiconductor wafer in a process chamber to improve power coupling through the substrate. The apparatus contains a pedestal assembly and a pedestal cover positioned over the top surface of and circumscribing the pedestal assembly for electrically isolating the pedestal assembly. The pedestal cover reduces conductive film growth in the wafer process region. As such, RF wafer biasing power from the pedestal assembly remains coupled through the substrate during processing.
摘要翻译： 用于在处理室中支撑诸如半导体晶片的衬底以改善通过衬底的功率耦合的装置。 该装置包括一个基座组件和一个位于盖子顶部表面上并围绕基座组件的基座盖，用于电绝缘基座组件。 基座盖减少晶片工艺区域中的导电膜生长。 因此，来自基座组件的RF晶片偏置功率在处理期间保持通过衬底耦合。
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公开(公告)号：US06254746B1
公开(公告)日：2001-07-03
申请号：US08853024
申请日：1997-05-08
申请人： Anantha Subramani , John C. Forster , Bradley O. Stimson , Sergio Edelstein , Howard Grunes , Avi Tepman , Zheng Xu
发明人： Anantha Subramani , John C. Forster , Bradley O. Stimson , Sergio Edelstein , Howard Grunes , Avi Tepman , Zheng Xu
IPC分类号： C23C1434
CPC分类号： H01J37/32504 , H01J37/321 , H01J37/32623 , H01J37/32651 , H01J37/34
摘要： A recessed coil for a plasma chamber in a semiconductor fabrication system is provided. Recessing the coil reduces deposition of material onto the coil which in turn leads to a reduction in particulate matter shed by the coil onto the workpiece.
摘要翻译： 提供了一种用于半导体制造系统中的等离子体室的凹陷线圈。 嵌入线圈减少材料在线圈上的沉积，这又导致线圈在工件上脱落的颗粒物质的减少。
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公开(公告)号：US20160293798A1
公开(公告)日：2016-10-06
申请号：US15183594
申请日：2016-06-15
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
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公开(公告)号：US08696878B2
公开(公告)日：2014-04-15
申请号：US13457441
申请日：2012-04-26
IPC分类号： C25B9/00 , C23C14/00 , C25B11/00 , C25B13/00 , B05C11/11 , C23C16/00 , C23C16/458 , C23C14/34 , C23C14/50 , C23C14/56 , H01J37/32 , H01J37/34
CPC分类号： C23C16/4585 , C23C14/34 , C23C14/50 , C23C14/564 , H01J37/32623 , H01J37/32633 , H01J37/3408 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
摘要翻译： 本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。 在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。 下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁 衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带 基板支撑的边缘。
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公开(公告)号：US20130285065A1
公开(公告)日：2013-10-31
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译： 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。
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公开(公告)号：US20070246346A1
公开(公告)日：2007-10-25
申请号：US11764133
申请日：2007-06-15
CPC分类号： C23C14/3414
摘要： A sputtering target comprising an inverted annular trough encircling a central cylindrical well, and additionally comprising a plurality of electroplated layers of sputtering material is described. The sputtering material comprises at least one of aluminum, copper, tantalum, titanium and tungsten.
摘要翻译： 描述了一种溅射靶，其包括环形中心圆柱形阱的倒置环形槽，并且另外包括多个溅射材料的电镀层。 溅射材料包括铝，铜，钽，钛和钨中的至少一种。
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公开(公告)号：US20060076232A1
公开(公告)日：2006-04-13
申请号：US11226858
申请日：2005-09-14
申请人： Keith Miller , Anantha Subramani , Maurice Ewert , Tza-Jing Gung , Hong Yang , Vincent Burkhart
发明人： Keith Miller , Anantha Subramani , Maurice Ewert , Tza-Jing Gung , Hong Yang , Vincent Burkhart
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.
摘要翻译： 一种连续可变的多位磁控管，其以可自由选择的半径在溅射靶的背面绕中心轴旋转。 该位置从外部动态地控制，例如通过连接在支撑磁控管的枢转臂和固定到轴的臂之间的液压致动器，通过两个独立可从外部控制的同轴轴并且通过青蛙支撑磁控管 机构或连接在枢转臂之间并由外部滑块移动的电缆。 磁控管可以以两个，三个或更多个离散的半径旋转或以连续的螺旋图案移动。
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29.发明授权Magnetron for a vault shaped sputtering target having two opposed sidewall magnets 有权用于具有两个相对的侧壁磁体的拱形溅射靶的磁控管公开(公告)号：US06790326B2
公开(公告)日：2004-09-14
申请号：US10171318
申请日：2002-06-13
IPC分类号： C23C1435
CPC分类号： H01J37/3423 , H01J37/3405 , H01J37/3455
摘要： A plasma sputter reactor including a target with an annular vault formed in its surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target.
摘要翻译： 一种等离子体溅射反应器，其包括具有环形拱顶的靶，其表面面向待溅射涂覆的晶片，并且具有内侧壁和外侧壁以及顶部。 在管状内侧壁之间的靶的后部形成有孔。 与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件，位于内侧壁后面的另一极性的可旋转管状磁体组件，以及可在屋顶上方旋转的小型不平衡磁控管 关于目标的中心轴。
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30.发明授权Method and apparatus for forming a uniform layer on a workpiece during sputtering 失效溅射期间在工件上形成均匀层的方法和装置公开(公告)号：US06409890B1
公开(公告)日：2002-06-25
申请号：US09362917
申请日：1999-07-27
申请人： Howard E. Grunes , Zheng Xu , Praburam Gopalraja , John C. Forster , Ralf Hofmann , Anantha Subramani
发明人： Howard E. Grunes , Zheng Xu , Praburam Gopalraja , John C. Forster , Ralf Hofmann , Anantha Subramani
IPC分类号： C23C1435
CPC分类号： H01J37/321 , C23C14/044 , C23C14/358 , H01J37/3447
摘要： Embodiments include devices and methods for sputtering material onto a workpiece in a chamber which includes a plasma generation area and a target. A coil is positioned to inductively couple energy into the plasma generation area to generate a plasma. A body is positioned between the workpiece and the target to prevent an amount of target material from being sputtered onto the workpiece. The body prevents an amount of target material from being sputtered onto the workpiece. The body may act as a dark space shield and inhibit plasma formation between the body and the target. The body may also act as a physical shield to block sputtered material from accumulating on the workpiece.
摘要翻译： 实施例包括用于在包括等离子体产生区域和靶子的室中将材料溅射到工件上的装置和方法。 线圈被定位成将能量感应地耦合到等离子体产生区域中以产生等离子体。 主体位于工件和目标之间，以防止一定量的目标材料溅射到工件上。 该主体防止一定量的目标材料溅射到工件上。 身体可以作为暗空间屏蔽，并且抑制身体和目标之间的血浆形成。 主体还可以作为物理屏蔽来阻止溅射的材料积聚在工件上。
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