公开(公告)号：US20060163489A1

公开(公告)日：2006-07-27

申请号：US11044659

申请日：2005-01-27

申请人： Russell Low ,  Eric Cobb ,  Joseph Olson ,  Leo Klos

发明人： Russell Low ,  Eric Cobb ,  Joseph Olson ,  Leo Klos

IPC分类号： H01J27/00

CPC分类号： H01J27/08

摘要： An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.

摘要翻译： 离子注入机具有源电弧室，该电弧室包括在电弧室的排斥端处的导电端壁，端壁具有围绕开口的中心部分。 陶瓷绝缘体固定在端壁的外表面上，例如通过外周螺纹与端壁的凹陷区域的周边处的配合螺纹啮合。 导电排斥器具有固定到绝缘体并延伸通过端壁开口的窄轴，以及设置在源弧室内与主体壁相邻的主体。 端壁，绝缘体和推斥器构造成在端壁的中心部分与（i）推斥体之间形成连续的真空间隙，（ii）推斥轴，和（iii）绝缘体。 绝缘体内表面可以具有脊状横截面。

公开(公告)号：US20130087189A1

公开(公告)日：2013-04-11

申请号：US13270290

申请日：2011-10-11

申请人： John Graff ,  Nicholas Bateman ,  Joseph Olson ,  Benjamin Riordon

发明人： John Graff ,  Nicholas Bateman ,  Joseph Olson ,  Benjamin Riordon

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/0682 ,  H01J2237/31711 ,  H01L21/266 ,  H01L31/022441 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： An improved method of fabricating an interdigitated back contact (IBC) solar cell is disclosed. A first mask is used to perform a patterned ion implantation of n-type dopant to create the back surface field. A second mask is then used to create the p-type emitter on the same surface. The second mask may be aligned to the n-type implant, and may be used in a plurality of orientations to create the desired p-type emitter. In some embodiments, a p-type blanket implant is performed as well. In some embodiments, a doping gradient is created.

摘要翻译： 公开了一种制造交错背接触（IBC）太阳能电池的改进方法。 使用第一掩模来执行n型掺杂剂的图案化离子注入以产生背表面场。 然后使用第二个掩模在相同的表面上创建p型发射器。 第二掩模可以对准n型植入物，并且可以以多个取向使用以产生所需的p型发射体。 在一些实施例中，还执行p型覆盖植入。 在一些实施例中，产生掺杂梯度。

公开(公告)号：USD578131S1

公开(公告)日：2008-10-07

申请号：US29266019

申请日：2006-09-12

申请人： Michael Horito ,  Tyler Allan ,  Joseph Olson

设计人： Michael Horito ,  Tyler Allan ,  Joseph Olson

公开(公告)号：US07394073B2

公开(公告)日：2008-07-01

申请号：US11336466

申请日：2006-01-20

申请人： James J. Cummings ,  Joseph Olson ,  Arthur H. Clough ,  Eric Hermanson ,  Rosario Mollica ,  Paul J. Murphy ,  Mark Donahue

发明人： James J. Cummings ,  Joseph Olson ,  Arthur H. Clough ,  Eric Hermanson ,  Rosario Mollica ,  Paul J. Murphy ,  Mark Donahue

IPC分类号： G01K1/08

CPC分类号： H01J37/244 ,  G01B15/00 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/31701 ,  H01J2237/31703

摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.

摘要翻译： 用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记截取至少一部分 离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并响应于检测到的离子束产生传感器信号。 传感器信号和标志的对应位置代表离子束在垂直平面中的垂直波束角。 感测装置可以包括掩模和用于平移掩模以便在相关法拉第传感器的一部分上限定束流传感器的机构。

公开(公告)号：US20060219936A1

公开(公告)日：2006-10-05

申请号：US11099119

申请日：2005-04-05

申请人： Joseph Olson ,  Eric Hermanson ,  Rosario Mollica ,  Paul Murphy

发明人： Joseph Olson ,  Eric Hermanson ,  Rosario Mollica ,  Paul Murphy

IPC分类号： G01K1/08 ,  H01J3/14

CPC分类号： H01J37/244 ,  G01B15/00 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/31701

摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal having a first signal component representative of the first feature and a second signal component representative of the second feature. The first and second signal components and corresponding positions of the flag are representative of an angle of the ion beam in a direction orthogonal to the translation path. The sensing device may be a two-dimensional array of beam current sensors. The system may provide measurements of horizontal and vertical beam angles while translating the flag in only one direction.

摘要翻译： 用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记拦截至少一部分 离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并产生具有代表第一特征的第一信号分量和表示第二特征的第二信号分量的传感器信号。 标志的第一和第二信号分量和对应的位置代表垂直于平移路径的方向上离子束的角度。 感测装置可以是束电流传感器的二维阵列。 该系统可以提供水平和垂直波束角度的测量，同时仅在一个方向上翻译标志。

公开(公告)号：US20060208204A1

公开(公告)日：2006-09-21

申请号：US11146072

申请日：2005-06-07

申请人： Atul Gupta ,  Joseph Olson

发明人： Atul Gupta ,  Joseph Olson

IPC分类号： H01J37/302 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J2237/2487 ,  H01J2237/30411 ,  H01J2237/30483 ,  H01J2237/31703 ,  H01J2237/31706 ,  H01L21/26586 ,  H01L29/66803

摘要： A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.

摘要翻译： 公开了一种用于先进应用的离子束角度扩展控制技术。 在一个特定的示例性实施例中，该技术可以被实现为用于高级应用的离子束角度扩展控制的方法。 该方法可以包括在两个或更多个不同的入射角处在衬底表面处引导一个或多个离子束。 该方法还可以包括至少部分地基于两个或多个入射角度改变与至少一个离子束相关联的离子束剂量，从而将基底表面暴露于受控的离子束角度 - 剂量分布。

公开(公告)号：US08590485B2

公开(公告)日：2013-11-26

申请号：US12767125

申请日：2010-04-26

申请人： Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

发明人： Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

CPC分类号： H01J37/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/0815 ,  H05H1/30

摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.

摘要翻译： 公开了一种能够利用电感耦合等离子体生产产生高密度宽带状离子束的离子源。 与常规ICP源相反，本公开描述了不是圆柱形的ICP源。 相反，源被限定为使得其宽度（其是提取梁的尺寸）大于其高度。 可以定义源的深度以最大化从天线到等离子体的能量传递。 在另一个实施例中，围绕ICP源的多谐振磁场用于进一步增加电流密度并提高所提取的离子束的均匀性。 离子束均匀性也可以通过几个独立的控制来控制，包括气体流速和输入射频功率。

公开(公告)号：US07547460B2

公开(公告)日：2009-06-16

申请号：US09950939

申请日：2001-09-12

申请人： Antonella Cucchetti ,  Joseph Olson ,  Gregory Gibilaro ,  Rosario Mollica

发明人： Antonella Cucchetti ,  Joseph Olson ,  Gregory Gibilaro ,  Rosario Mollica

IPC分类号： C23C14/54 ,  C23C14/48

CPC分类号： H01J37/3171 ,  H01J37/1474 ,  H01J2237/3045

摘要： Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.

摘要翻译： 提供了用于控制离子注入系统中的剂量均匀性的方法和装置。 根据本发明的一个实施例，调整初始扫描波形以获得在第一注入过程中使用的所需均匀性，并且存储经调整的扫描波形。 存储的扫描波形在第二次注入过程中被调用并使用。 根据本发明的另一实施例，识别期望的波束参数，并且基于期望的波束参数，调用存储的扫描波形以用于均匀性调整处理，并且执行均匀性调整处理。 根据本发明的另一实施例，提供了一种装置，其包括用于测量扫描离子束的电流分布的光束轮廓仪。 该装置还包括数据采集和分析单元，用于基于期望的电流分布和所测量的电流分布来调整初始扫描波形，以用于第一注入过程，存储经调整的扫描波形，调用所存储的扫描波形，并使用 在第二次植入过程中调用扫描波形。

公开(公告)号：US20060289798A1

公开(公告)日：2006-12-28

申请号：US11336466

申请日：2006-01-20

申请人： James Cummings ,  Joseph Olson ,  Arthur Clough ,  Eric Hermanson ,  Rosario Mollica ,  Paul Murphy ,  Mark Donahue

发明人： James Cummings ,  Joseph Olson ,  Arthur Clough ,  Eric Hermanson ,  Rosario Mollica ,  Paul Murphy ,  Mark Donahue

IPC分类号： H01J37/08

CPC分类号： H01J37/244 ,  G01B15/00 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/31701 ,  H01J2237/31703

摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.

摘要翻译： 用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记截取至少一部分 离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并响应于检测到的离子束产生传感器信号。 传感器信号和标志的对应位置代表离子束在垂直平面中的垂直波束角。 感测装置可以包括掩模和用于平移掩模以便在相关法拉第传感器的一部分上限定束流传感器的机构。

公开(公告)号：US20060208202A1

公开(公告)日：2006-09-21

申请号：US11145949

申请日：2005-06-07

申请人： Atul Gupta ,  Joseph Olson

发明人： Atul Gupta ,  Joseph Olson

IPC分类号： H01J37/302 ,  H01J37/317

CPC分类号： H01J37/304 ,  H01J37/1477 ,  H01J37/3171 ,  H01J2237/1507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01L21/26586

摘要： A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.

摘要翻译： 公开了一种用于离子束角度扩展控制的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于离子束角度扩展控制的方法。 该方法可以包括以两个或更多个不同的入射角度在衬底表面处引导一个或多个离子束，从而将衬底表面暴露于受控的离子束入射角扩散。