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21.发明授权NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same 有权具有纳米管块的NRAM阵列，纳米管迹线和纳米管平面及其制造方法公开(公告)号：US08587989B2
公开(公告)日：2013-11-19
申请号：US12486602
申请日：2009-06-17
IPC分类号： G11C13/00
CPC分类号： G11C13/025 , B82Y10/00 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/149 , H01L45/1675
摘要： NRAM arrays with nanotube blocks, traces and planes, and methods of making the same are disclosed. In some embodiments, a nanotube memory array includes a nanotube fabric layer disposed in electrical communication with first and second conductor layers. A memory operation circuit including a circuit for generating and applying a select signal on first and second conductor layers to induce a change in the resistance of the nanotube fabric layer between the first and second conductor layers is provided. At least two adjacent memory cells are formed in at least two selected cross sections of the nanotube fabric and conductor layers such that each memory cell is uniquely addressable and programmable. For each cell, a change in resistance corresponds to a change in an informational state of the memory cell. Some embodiments include bit lines, word lines, and reference lines. In some embodiments, 6F2 memory cell density is achieved.
摘要翻译： 公开了具有纳米管块，轨迹和平面的NRAM阵列及其制造方法。 在一些实施例中，纳米管存储器阵列包括布置成与第一和第二导体层电连通的纳米管织物层。 一种存储器操作电路，包括用于在第一和第二导体层上产生和施加选择信号以引起第一和第二导体层之间的纳米管织物层的电阻变化的电路。 至少两个相邻的存储单元形成在纳米管织物和导体层的至少两个选定的横截面中，使得每个存储单元是唯一可寻址和可编程的。 对于每个单元，电阻变化对应于存储单元的信息状态的变化。 一些实施例包括位线，字线和参考线。 在一些实施例中，实现6F2存储单元密度。
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22.发明授权Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same 有权非易失性纳米管可编程逻辑器件和使用其的非易失性纳米管场可编程门阵列公开(公告)号：US08541843B2
公开(公告)日：2013-09-24
申请号：US12536803
申请日：2009-08-06
申请人： Claude L. Bertin , Rinn Cleavelin , Thomas Rueckes
发明人： Claude L. Bertin , Rinn Cleavelin , Thomas Rueckes
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： G11C13/0069 , B82Y10/00 , G11C13/0004 , G11C13/0007 , G11C13/004 , G11C13/0061 , G11C13/025 , G11C23/00 , G11C29/02 , G11C29/021 , G11C29/023 , G11C29/028 , G11C2013/0042 , G11C2013/0054 , G11C2213/35 , G11C2213/82 , H03K19/17728 , H03K19/17736 , H03K19/1776 , H03K19/1778 , H03K19/17796 , Y10S977/94
摘要： Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performance chip implementations and are compatible with low cost CMOS technologies and simple to integrate.
摘要翻译： 描述了具有大电路可编程的具有大逻辑容量和现场可编程性的现场可编程器件（FPD）芯片。 FPD使用小型多功能非易失性纳米管开关，可实现低密度低功耗和高性能芯片实现的高效架构，并兼容低成本CMOS技术并易于集成。
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公开(公告)号：US08310015B2
公开(公告)日：2012-11-13
申请号：US11333426
申请日：2006-01-17
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L29/82
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described, and include platforms having horizontally oriented sensor elements comprising nanotubes or other nanostructures, such as nanowires. Under certain embodiments, a sensor element has an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes, and, under certain embodiments, it comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing a collection of nanotubes on the structure; defining a pattern within the nanotube collection; removing part of the collection so that a patterned collection remains to form a sensor element; and providing circuitry to electrically sense the sensor's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under certain embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array includes multiple sensors.
摘要翻译： 描述了传感器平台及其制造方法，并且包括具有包括纳米管或其他纳米结构（例如纳米线）的水平定向的传感器元件的平台。 在某些实施方案中，传感器元件对分析物具有亲和力。 在某些实施方案中，这种传感器元件包括一个或多个原始纳米管，并且在某些实施方案中，其包含衍生化或官能化的纳米管。 在某些实施例中，通过提供支撑结构来制造传感器; 在结构上提供纳米管的集合; 定义纳米管集合内的图案; 去除部分集合，使得图案化的集合保持形成传感器元件; 以及提供用于电感测传感器电特性的电路。 在某些实施方案中，传感器元件包括预衍生的或预功能化的纳米管。 在某些实施方案中，传感器材料在提供在结构上或在图案化之后被衍生化或官能化。 在某些实施例中，大规模阵列包括多个传感器。
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24.发明授权Compact electrical switching devices with nanotube elements, and methods of making same 有权具有纳米管元件的紧凑型电气开关器件及其制造方法公开(公告)号：US08222704B2
公开(公告)日：2012-07-17
申请号：US12651288
申请日：2009-12-31
CPC分类号： B82Y10/00 , G11C13/025 , H01L27/24 , H01L29/0665 , H01L29/43 , H01L51/0048 , Y10S977/742 , Y10S977/936
摘要： An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed.
摘要翻译： 电气装置包括基板; 第一和第二活跃区域; 布置在第一平面中的第一和第二字线; 第一和第二位线在第二平面中并且与第一和第二有效区域电连通; 以及设置在第三平面中的参考线。 设置在第四平面中的纳米管元件通过在纳米管元件的第一表面处的电连接与第一和第二有源区域和参考线路电连通。 纳米管元件包括具有响应于电刺激可独立调节的电阻状态的第一和第二区域，其中第一和第二区域非常地保持电阻状态。 这种电气装置的阵列可以形成为非易失性存储装置。 还公开了制造这种装置的方法。
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公开(公告)号：US07859385B2
公开(公告)日：2010-12-28
申请号：US12111442
申请日：2008-04-29
IPC分类号： H01C10/00
CPC分类号： H01C7/06 , H01C7/003 , H01C7/005 , H01C7/006 , H01C10/306 , H01C17/0652 , H01C17/232 , H01C17/283 , H01L28/22
摘要： Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.
摘要翻译： 电阻元件包括具有预定面积的纳米纤维的图案化区域，其中纳米纤维具有选定的薄层电阻; 以及第一和第二电触头接触纳米尺寸的图案化区域并且彼此间隔开。 元件在第一和第二电触点之间的电阻由所选择的纳米尺寸的薄层电阻，纳米的面积以及第一和第二电触头间隔的关系来确定。 体积电阻是可调谐的。
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26.发明授权Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks 有权存储元件和交叉点开关以及使用非易失性纳米管块的阵列公开(公告)号：US07835170B2
公开(公告)日：2010-11-16
申请号：US11835613
申请日：2007-08-08
IPC分类号： G11C11/00
CPC分类号： G11C5/063 , B82Y10/00 , G11C13/0002 , G11C13/0021 , G11C13/025 , G11C17/16 , G11C17/165 , G11C2213/19 , G11C2213/77 , G11C2213/79 , H01L27/10 , H01L27/105 , H01L27/1052 , H01L27/112 , H01L29/0665 , H01L29/0669 , H01L29/0673 , H01L51/0048 , H01L51/0591 , Y10S977/943
摘要： Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.
摘要翻译： 在一个方面，覆盖的纳米管开关包括：（a）包括不对齐的多个纳米管的纳米管元件，所述纳米管元件具有顶表面，底表面和侧表面; （b）与纳米管元件接触的第一和第二端子，其中第一端子设置在并基本上覆盖纳米管元件的整个顶表面，并且其中第二端子接触纳米管的底表面的至少一部分 元件; 和（c）能够向第一和第二端子施加电刺激的控制电路。 纳米管元件可以响应于由控制电路施加到第一和第二端子的对应的多个电刺激而在多个电子状态之间切换。 对于每个不同的电子状态，纳米管元件提供在第一和第二端子之间具有不同电阻的电路径。
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公开(公告)号：US07786540B2
公开(公告)日：2010-08-31
申请号：US11827393
申请日：2007-07-11
申请人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
发明人： Brent M. Segal , Thomas Rueckes , Bernhard Vogeli , Darren K. Brock , Venkatachalam C. Jaiprakash , Claude L. Bertin
IPC分类号： H01L23/00
CPC分类号： G01N27/4146 , B82Y15/00 , G11C13/025 , Y10S977/902 , Y10S977/904 , Y10S977/92 , Y10S977/921 , Y10S977/922 , Y10S977/924 , Y10T29/43 , Y10T29/49082
摘要： Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning. Under certain embodiments, a large-scale array of sensor platforms includes a plurality of sensor elements.
摘要翻译： 介绍传感器平台及其制作方法。 描述了具有包括一个或多个纳米结构如纳米管的非水平定向的传感器元件的平台。 在某些实施方案中，传感器元件具有或被制成对分析物具有亲和性。 在某些实施例中，这种传感器元件包括一个或多个原始纳米管。 在某些实施方案中，传感器元件包括衍生的或功能化的纳米管。 在某些实施例中，通过提供支撑结构来制造传感器; 在所述结构上提供一个或多个纳米管以提供用于传感器元件的材料; 以及提供用于电感测传感器元件电特性的电路。 在某些实施方案中，传感器元件包括预衍生化或预官能化的纳米管。 在其它实施例中，传感器材料在结构上提供之后或在图案化之后被衍生化或功能化。 在某些实施例中，传感器平台的大规模阵列包括多个传感器元件。
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公开(公告)号：US07782652B2
公开(公告)日：2010-08-24
申请号：US12246009
申请日：2008-10-06
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： G11C11/00
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01H1/027 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/708 , Y10S977/932 , Y10S977/936 , Y10S977/938 , Y10S977/94 , Y10S977/943
摘要： Nanotube-based switching elements with multiple controls and circuits made from such. A switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel between said input node and said output node. The output node is constructed and arranged so that channel formation is substantially unaffected by the electrical state of the output node. The control structure includes a control electrode and a release electrode, disposed on opposite sides of the nanotube channel element. The control and release may be used to form a differential input, or if the device is constructed appropriately to operate the circuit in a non-volatile manner. The switching elements may be arranged into logic circuits and latches having differential inputs and/or non-volatile behavior.
摘要翻译： 基于纳米管的开关元件具有由此制成的多个控制和电路。 开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。 相对于纳米管通道元件设置控制结构，以可控地形成和取消所述输入节点和所述输出节点之间的导电通道。 输出节点的构造和布置使得通道形成基本上不受输出节点的电气状态的影响。 控制结构包括设置在纳米管通道元件的相对侧上的控制电极和释放电极。 控制和释放可用于形成差分输入，或者如果该装置被适当地构造以以非易失性方式操作电路。 开关元件可以被布置成具有差分输入和/或非易失性行为的逻辑电路和锁存器。
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公开(公告)号：US07777222B2
公开(公告)日：2010-08-17
申请号：US12548131
申请日：2009-08-26
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/025 , G11C23/00 , H01H1/0094 , H01H1/027 , H01H2001/0005 , H01L27/28 , H01L29/0673 , H01L29/73 , H01L29/78 , H01L51/0048 , H01L51/0508 , Y10S977/725 , Y10S977/733 , Y10S977/755 , Y10S977/938 , Y10T29/49105
摘要： Nanotube device structures and methods of fabrication. A method of making a nanotube switching element includes forming a first structure having at a first output electrode; forming second structure having a second output electrode; forming a conductive article having at least one nanotube, the article having first and second ends; positioning the conductive article between said first and second structures such that the first structure clamps the first and second ends of the article to the second structure, and such that the first and second output electrodes are opposite each other with the article positioned therebetween; providing at least one signal electrode in electrical communication with the conductive article; and providing at least one control electrode in spaced relation to the conductive article such that the control electrode may control the conductive article to form a conductive pathway between the signal electrode and the first output electrode.
摘要翻译： 纳米管器件结构和制造方法。 制造纳米管开关元件的方法包括：形成具有第一输出电极的第一结构; 形成具有第二输出电极的第二结构; 形成具有至少一个纳米管的导电制品，所述制品具有第一和第二端; 将导电制品定位在所述第一和第二结构之间，使得第一结构将制品的第一和第二端夹持到第二结构，并且使得第一和第二输出电极彼此相对，物品位于它们之间; 提供至少一个与所述导电制品电连通的信号电极; 以及提供与所述导电制品间隔开的至少一个控制电极，使得所述控制电极可以控制所述导电制品以在所述信号电极和所述第一输出电极之间形成导电路径。
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30.发明授权Field effect devices having a gate controlled via a nanotube switching element 有权具有通过纳米管开关元件控制的栅极的场效应器件公开(公告)号：US07709880B2
公开(公告)日：2010-05-04
申请号：US11742290
申请日：2007-04-30
申请人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
发明人： Claude L. Bertin , Thomas Rueckes , Brent M. Segal
IPC分类号： H01L29/78
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/54 , G11C23/00 , G11C2213/17 , H01H1/0094 , H01L27/115 , H01L29/78 , H01L51/0048 , Y10S977/732 , Y10S977/733 , Y10S977/936
摘要： Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
摘要翻译： 具有通过纳米管开关元件控制的栅极的场效应器件。 在一个实施例中，非易失性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 栅极结构设置在沟道区域上方的绝缘体上并具有对应的端子。 纳米管开关元件响应于第一控制端子和第二控制端子，并且电连接地定位在栅极结构和对应于栅极结构的端子之间。 纳米管开关元件在机械上可操作地处于打开和关闭状态之一，从而打开或关闭栅极结构及其对应端子之间的电连通路径。 当纳米管开关元件处于闭合状态时，器件的沟道导电性和操作响应于对应于源极和漏极区域以及栅极结构的端子处的电刺激。
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