摘要:
A diamond based electrochemical band sensor comprising: a diamond body; and a plurality of boron doped diamond band electrodes disposed within the diamond body, wherein at least a portion of each of the plurality of boron doped diamond band electrodes is doped with boron to a level suitable to achieve metallic conduction, the boron doped diamond electrodes being spaced apart by non-conductive intrinsic layers of diamond, wherein the diamond body comprises a front sensing surface with the plurality of boron doped diamond band electrodes being exposed at said sensing surface and extending in an elongate manner across said surface, and wherein each boron doped diamond electrode has a length/width ratio of at least 10 at the front sensing surface.
摘要:
A diamond element (10) having a convex surface is disclosed, the convex surface including a spherical segment for which the maximum peak to valley deviation from a perfect spherical surface is less than about 5 μm. The diamond element (10) may be a solid polycrystalline diamond material and/or may comprise base material which is coated with diamond. Alternatively or in addition, the RMS deviation from a perfect spherical surface may be less than about 500 nm, or the RMS roughness less than about 30 nm. A diamond element (10) with a radius of curvature less than about 20 mm is also disclosed. In one aspect a diamond element (10) having a conical half-angle greater than about 10° is described. Diamond elements (10) of this type are intended for use as metrology tips. Key to this invention is the realization that a diamond surface, particularly a diamond surface with low Ra (roughness) and which is free of defects such as pits, digs and scratches, accumulates less material from the surface being measured, and thus provides a longer life.
摘要:
An electrochemical sensor comprising: a reference electrode (4) formed of an electrically conductive synthetic doped diamond material and configured to be located in electrical contact with a solution (8) to be analysed; a sensing electrode (2) formed of an electrically conductive synthetic doped diamond material and configured to be located in contact with the solution (8) to be analysed; an electrical controller (10) configured to conduct stripping voltammetric measurements by applying a voltage to the sensing electrode (2), to change the applied voltage relative to the reference electrode (4), and to measure an electric current flowing through the sensing electrode (2) thereby generating voltammetry data; and a calibration system configured to provide an in-situ calibration for providing a reference point in the voltammetric data since the potential of the diamond reference electrode is non fixed and floating. Consequently, assigning of peaks (M1, M2, M3) in the voltammetry data to chemical species (M1, M2, M3) is possible, thereby allowing the type and concentration of chemical species in the solution (8) to be determined. The in-situ calibration consists of: 1-using a spectrometer for X-rays, Gamma rays or fluorescence measurements integrated in the sensor, 2-using a known redox couple added to the solution that will provide a reference peak in the voltammetric data, or 3-producing in-situ ionic species at the vicinity of the reference electrode.
摘要:
A component that is rigid and three-dimensional and has a relatively low mass. The component has a foil body formed of a metal or metal alloy matrix that is embedded with ultra-hard particles or grit, such as diamond and/or cBN. It can be used in applications where a combination of high rigidity and low mass is required, such as in audio applications, for example.
摘要:
A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
摘要:
A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.
摘要:
The present invention relates to a diamond electronic device comprising a functional interface between two solid materials, wherein the interface is formed by a planar first surface of a first layer of single crystal diamond and a second layer formed on the first surface of the first diamond layer, the second layer being solid, non-metallic and selected from diamond, a polar material and a dielectric material, and wherein the planar first surface of the first layer of single crystal diamond has an Rq of less than 10 nm and has at least one of the following characteristics: (a) the first surface is an etched surface; (b) a density of dislocations in the first diamond layer breaking the first surface is less than 400 cm−2 measured over an area greater than 0.014 cm2; (c) a density of dislocations in the second layer breaking a notional or real surface lying within the second layer parallel to the interface and within 50 μm of the interface is less than 400 cm−2 measured over an area greater than 0.014 cm2; and (d) the first surface has an Rq less than 1 nm.
摘要:
A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapor deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.
摘要:
Single crystal diamond having a high chemical purity i.e. a low nitrogen content and a high isotopic purity i.e. a low 13C content, methods for producing the same and a solid state system comprising such single crystal diamond are described.
摘要:
A synthetic single crystal diamond material comprising: a first region comprising electron donor defects; a second region comprising quantum spin defects; and a third region between the first and second regions. The second and third regions have a lower concentration of electron donor defects than the first region. The first and second regions are sufficiently close to allow electrons to be donated from the first region to the second region, thus forming negatively charged quantum spin defects in the second and positively charged defects in the first region, and sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region.