公开(公告)号：US6127262A

公开(公告)日：2000-10-03

申请号：US852787

申请日：1997-05-07

Applicant: Judy H. Huang ,  Wai-Fan Yau ,  David Cheung ,  Chan-Lon Yang

Inventor： Judy H. Huang ,  Wai-Fan Yau ,  David Cheung ,  Chan-Lon Yang

IPC: H01L21/302 ,  C23C16/30 ,  C23C16/34 ,  C23C16/52 ,  G03F7/09 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768

CPC classification number: C23C16/308 ,  C23C16/345 ,  C23C16/52 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76829

Abstract: A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.

Abstract translation: 一种沉积蚀刻停止层的方法和装置。 该方法开始于将工艺气体引入其中设置衬底的处理室中。 然后在衬底上沉积蚀刻停止层。 然后将上覆层沉积在蚀刻停止层上。 蚀刻停止层基本上保护用于图案化上覆层的蚀刻剂的下层材料。 此外，蚀刻停止层还具有有利的光学特性，使其适合用作在蚀刻停止层下面的图案图案中的抗反射涂层。

公开(公告)号：US6086952A

公开(公告)日：2000-07-11

申请号：US97365

申请日：1998-06-15

Applicant: Chi-I Lang ,  Yeming Jim Ma ,  Fong Chang ,  Peter Wai-Man Lee ,  Shin-Puu Jeng ,  David Cheung

Inventor： Chi-I Lang ,  Yeming Jim Ma ,  Fong Chang ,  Peter Wai-Man Lee ,  Shin-Puu Jeng ,  David Cheung

IPC: C08F212/12 ,  B05D7/24 ,  C08F230/08 ,  C08G61/12 ,  H01L21/312 ,  H01L21/316 ,  C23C16/00

CPC classification number: B05D1/60

Abstract: A method for forming thin polymer layers having low dielectric constants or semiconductor substrates. In one embodiment, the method includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseous p-xylylene monomers with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon--carbon double bonds. The copolymer films have low dielectric constants, improved thermal stability, and excellent adhesion to silicon oxide layers in comparison to parylene-N homopolymers.

Abstract translation: 一种形成具有低介电常数或半导体衬底的薄聚合物层的方法。 在一个实施方案中，该方法包括稳定的二对二甲苯的蒸发，将这种气态二聚体材料热解转化为反应性单体，以及将所得气态对二甲苯单体与一个或多个具有硅 - 氧键的共聚单体共混， 至少两个悬挂的碳 - 碳双键。 与聚对二甲苯-N均聚物相比，共聚物膜具有低介电常数，改善的热稳定性和与氧化硅层的优异粘附性。

公开(公告)号：US6054379A

公开(公告)日：2000-04-25

申请号：US21788

申请日：1998-02-11

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and N.sub.2 O.

公开(公告)号：US6045618A

公开(公告)日：2000-04-04

申请号：US741241

申请日：1996-10-30

Applicant: Sebastien Raoux ,  Tsutomu Tanaka ,  Mukul Kelkar ,  Hari Ponnekanti ,  Kevin Fairbairn ,  David Cheung

Inventor： Sebastien Raoux ,  Tsutomu Tanaka ,  Mukul Kelkar ,  Hari Ponnekanti ,  Kevin Fairbairn ,  David Cheung

IPC: B01D45/06 ,  B01D53/32 ,  B01D53/46 ,  B01J19/08 ,  B01J19/12 ,  B01J19/24 ,  C23C16/44 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  H05H1/24 ,  B01D53/00

CPC classification number: H01J37/3244 ,  B01D45/06 ,  B01D53/32 ,  B01D53/46 ,  B01J19/08 ,  B01J19/088 ,  B01J19/126 ,  B01J19/249 ,  C23C16/4405 ,  C23C16/4412 ,  H01J37/32844 ,  H05H1/46 ,  B01D2257/206 ,  B01D2259/818 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2467 ,  B01J2219/247 ,  B01J2219/2474 ,  B01J2219/2475 ,  B01J2219/2487 ,  B01J2219/2493 ,  B01J2219/2496 ,  H01J2237/022 ,  H05H2001/4622 ,  H05H2001/4667 ,  H05H2245/1215 ,  Y02C20/30 ,  Y10S55/30

Abstract: An apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second members having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber, and the collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A microwave plasma generation system supplies microwave energy within the fluid conduit to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract translation: 一种用于最小化衬底处理室的排气管线中沉积的装置。 该装置包括具有在它们之间限定流体导管的相对表面的第一和第二构件。 流体导管包括在入口和出口之间的入口，出口和收集室。 该设备在其入口处连接以接收基板处理室的排气，并且收集室被构造和布置成收集流过流体管道的颗粒物质并且抑制颗粒物质从收集室排出。 微波等离子体产生系统在流体导管内提供微波能量以从流体导管内的蚀刻剂气体形成等离子体。 来自等离子体的成分与收集室中收集的颗粒物质发生反应，形成可以从流体导管泵出的气体产物。 该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

公开(公告)号：US5968324A

公开(公告)日：1999-10-19

申请号：US672888

申请日：1996-06-28

Applicant: David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

Inventor： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

IPC: G03F7/11 ,  C23C16/50 ,  G02B1/11 ,  G03F7/09 ,  H01L21/02 ,  H01L21/027 ,  C23C14/54

CPC classification number: G03F7/091

Abstract: A stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.

Abstract translation: 一种用于沉积抗反射层的稳定方法。 氦气用于降低等离子体增强硅烷氧化物，硅氮氧化物和氮化硅工艺的沉积速率。 氦也用于稳定工艺，使得可以沉积不同的膜。 本发明还提供了可以控制工艺参数以产生具有变化的最佳折射率，吸收指数和厚度以获得所需光学行为的抗反射层的条件。

公开(公告)号：USD318306S

公开(公告)日：1991-07-16

申请号：US182318

申请日：1988-04-15

Applicant: David Cheung

Designer： David Cheung

公开(公告)号：USD308991S

公开(公告)日：1990-07-03

申请号：US108047

申请日：1987-10-14

Applicant: David Cheung

Designer： David Cheung

公开(公告)号：US09613825B2

公开(公告)日：2017-04-04

申请号：US13590083

申请日：2012-08-20

Applicant: Roey Shaviv ,  Kirk Ostrowski ,  David Cheung ,  Joon Park ,  Bayu Thedjoisworo ,  Patrick J. Lord

Inventor： Roey Shaviv ,  Kirk Ostrowski ,  David Cheung ,  Joon Park ,  Bayu Thedjoisworo ,  Patrick J. Lord

IPC: H01L21/311 ,  G03F7/42 ,  H01J37/32

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01J37/32449 ,  H01J37/32724

Abstract: Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate. According to various embodiments, the hydrogen-based photoresist strip methods can employ one or more of the following techniques: 1) minimization of hydrogen budget by using short processes with minimal overstrip duration, 2) providing dilute hydrogen, e.g., 2%-16% hydrogen concentration, 3) minimization of material loss by controlling process conditions and chemistry, 4) using a low temperature resist strip, 5) controlling implant conditions and concentrations, and 6) performing one or more post-strip venting processes. Apparatus suitable to perform the photoresist strip methods are also provided.

公开(公告)号：US09274851B2

公开(公告)日：2016-03-01

申请号：US12626432

申请日：2009-11-25

Applicant: David Cheung ,  Mani Prasad Kancherla ,  Deepak Kothari ,  Gary Hemminger

Inventor： David Cheung ,  Mani Prasad Kancherla ,  Deepak Kothari ,  Gary Hemminger

IPC: G06F9/50 ,  H04L12/64 ,  H04M7/00 ,  G06F9/455 ,  H04L29/06

CPC classification number: G06F9/5077 ,  G06F9/45533 ,  G06F9/45537 ,  H04L12/6418 ,  H04L29/06176 ,  H04M7/006

Abstract: Techniques for providing core-based virtualization based upon cores provided by one or more processors of a system. A device such as a network device comprising multiple processor cores provides for core-based virtualization. According to one embodiment, a network device is provided comprising a first subsystem for processing packets received by the network device. The first subsystem may comprise a set of one or more processors, the one or more processors providing a plurality of cores. Each core in the plurality of cores may have associated memory resources.

Abstract translation: 基于由系统的一个或多个处理器提供的核提供基于核心的虚拟化的技术。 包括多个处理器核心的诸如网络设备的设备提供基于核心的虚拟化。 根据一个实施例，提供一种网络设备，其包括用于处理由网络设备接收的分组的第一子系统。 第一子系统可以包括一组一个或多个处理器，所述一个或多个处理器提供多个核。 多个核心中的每个核心可以具有相关联的存储器资源。

公开(公告)号：US09209000B2

公开(公告)日：2015-12-08

申请号：US13342757

申请日：2012-01-03

Applicant: Huatan Qiu ,  Woody Chung ,  Anirban Guha ,  David Cheung

Inventor： Huatan Qiu ,  Woody Chung ,  Anirban Guha ,  David Cheung

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/311

CPC classification number: H01J37/3244 ,  C23C16/45519 ,  H01J37/32449 ,  H01L21/31138

Abstract: Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings.

Abstract translation: 提供了用于等离子体剥离的系统，系统组件和方法。 在一个实施例中，气流分配容座可以具有圆形部分，该圆形部分包括限定接收腔的内表面，形成封闭端的外表面和外表面上的中心点，其具有延伸穿过其中的纵向轴线并且通过接收腔 。 第一和第二开口环提供与等离子体室的流动连通。 所述第二开口环设置在所述第一环和所述中心点之间，并且所述第二开口环的每个开口在所述内表面和所述外表面之间以相对于所述纵向轴线的第二角度延伸，所述纵向轴线小于所述第一角度并具有 直径基本上与相邻开口的直径相同，并且小于第一开口环的开口的直径。