公开(公告)号：US10658176B2

公开(公告)日：2020-05-19

申请号：US16123042

申请日：2018-09-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Frank W. Mont ,  Han You ,  Shariq Siddiqui ,  Brown C. Peethala

IPC: H01L21/76 ,  H01L21/02 ,  H01L21/285

Abstract: One illustrative method disclosed includes, among other things, forming a first dielectric layer and forming first and second conductive structures comprising cobalt embedded in the first dielectric layer. A second dielectric layer is formed above and contacting the first dielectric layer. The first and second dielectric layers comprise different materials, and a portion of the second dielectric layer comprises carbon or nitrogen. A first cap layer is formed above the first and second conductive structures and the second dielectric layer.

公开(公告)号：US20190157413A1

公开(公告)日：2019-05-23

申请号：US16237685

申请日：2019-01-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Hiroaki Niimi ,  Shariq Siddiqui ,  Tenko Yamashita

IPC: H01L29/45 ,  H01L21/768 ,  H01L29/417 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L21/285 ,  H01L23/535 ,  H01L23/532 ,  H01L29/08 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/161 ,  H01L23/485

Abstract: An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.

公开(公告)号：US20190019682A1

公开(公告)日：2019-01-17

申请号：US15647495

申请日：2017-07-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Rohit Galatage ,  Shariq Siddiqui ,  Chung-Ju Yang

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/311 ,  H01L29/51

CPC classification number: H01L21/28211 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02362 ,  H01L21/28185 ,  H01L21/31111 ,  H01L29/517 ,  H01L29/78

Abstract: Structures for reliability caps used in the manufacture of a field-effect transistor and methods for forming reliability caps used in the manufacture of a field-effect transistor. A layer comprised of a metal silicon nitride is deposited on a high-k dielectric material. The high-k dielectric material is thermally processed in an oxygen-containing ambient environment with the layer arranged as a cap between the high-k dielectric material and the ambient environment. Due at least in part to its composition, the layer blocks transport of oxygen from the ambient environment to the high-k dielectric material.

公开(公告)号：US10139358B2

公开(公告)日：2018-11-27

申请号：US14992319

申请日：2016-01-11

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc.

Inventor： Lisa F. Edge ,  Gangadhara R. Muthinti ,  Shariq Siddiqui

IPC: G01N21/21 ,  G01N27/02 ,  G01N21/25

Abstract: In an embodiment, a method comprises fitting a spectroscopic data of a layer in a layered structure to a dielectric function having a real part and an imaginary part; confirming that the dielectric function is physically possible; based on the dielectric function not being physically possible, repeating the fitting the spectroscopic data, or, based on the dielectric function being physically possible, defining an n degree polynomial to the dielectric function; determining a second derivative and a third derivative of the n degree polynomial; equating the second derivative to a first governing equation and the third derivative to a second governing equation and determining a constant of the first governing equation and the second governing equation; and based on the key governing equations, determining one or more of a band gap, a thickness, and a concentration of the layer.

公开(公告)号：US10062560B1

公开(公告)日：2018-08-28

申请号：US15497647

申请日：2017-04-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kevin J. Ryan ,  Shariq Siddiqui ,  Frank W. Mont ,  Cornelius B. Peethala

IPC: H01L21/44 ,  H01L21/02 ,  C25F1/00 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/76877 ,  C25F1/00 ,  H01L21/02063

Abstract: Aspects of the present disclosure provide a method of cleaning a semiconductor device. The method includes providing a semiconductor wafer having an exposed cobalt surface and rinsing the exposed cobalt surface with cathode water having a pH greater than 9 and an oxidation reduction potential of less than 0.0.

公开(公告)号：US09853115B2

公开(公告)日：2017-12-26

申请号：US15272919

申请日：2016-09-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Hiroaki Niimi ,  Shariq Siddiqui ,  Tenko Yamashita

IPC: H01L21/8238 ,  H01L21/768 ,  H01L29/45 ,  H01L29/08 ,  H01L29/161 ,  H01L29/417 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/285 ,  H01L27/092 ,  H01L23/532 ,  H01L29/78

CPC classification number: H01L29/45 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/285 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/7848

Abstract: An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.

公开(公告)号：US09484255B1

公开(公告)日：2016-11-01

申请号：US14930933

申请日：2015-11-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC.

Inventor： Hiroaki Niimi ,  Shariq Siddiqui ,  Tenko Yamashita

IPC: H01L21/8238 ,  H01L21/768 ,  H01L27/092 ,  H01L23/535 ,  H01L21/285 ,  H01L29/78

CPC classification number: H01L29/45 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/285 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L21/823814 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/535 ,  H01L27/092 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/7848

Abstract: An electrical device including a first semiconductor device having a silicon and germanium containing source and drain region, and a second semiconductor device having a silicon containing source and drain region. A first device contact to at least one of said silicon and germanium containing source and drain region of the first semiconductor device including a metal liner of an aluminum titanium and silicon alloy and a first tungsten fill. A second device contact is in contact with at least one of the silicon containing source and drain region of the second semiconductor device including a material stack of a titanium oxide layer and a titanium layer. The second device contact may further include a second tungsten fill.

Abstract translation: 一种电气装置，包括具有硅和锗的源极和漏极区域的第一半导体器件，以及具有含硅源极和漏极区域的第二半导体器件。 与所述第一半导体器件的所述含硅和含锗的源极和漏极区域中的至少一个接触的第一器件包括铝钛和硅合金的金属衬垫和第一钨填充物。 第二器件触点与第二半导体器件的含硅源极和漏极区域中的至少一个接触，包括氧化钛层和钛层的材料堆叠。 第二器件接触件还可以包括第二钨填充物。