Abstract:
A vibration dosimeter (2) for determining the vibrational loading of people comprises a determination device (6) for determining the operating period duration, a calculation device (6) for calculating the permitted work time as a function of a tool-specific characteristic vibration value, a comparison device (6) for comparing the effective operating period duration with the permitted work time, and an interface (3) for reading in the characteristic vibration value from the tool (1).
Abstract:
A hand-held power tool, in particular a rotary hammer, is indicated that includes a machine housing (10) with a tool fitting (12) integrated therein, the tool fitting (12) being rotatably drivable in a first mode and being non-rotatably fixable on the machine housing (10) in a second mode, and that includes a duty-type switch (20) with a coupling element (21) capable of being displaced to activate the modes, and an actuating element (22) that induces its displacement. To prevent maloperation and resultant damage to the machine when the operator switches between modes, the actuating element is designed as an electrical actuator (23), preferably as an electromagnet (25) controlled by an electronic control unit (24).
Abstract:
In a multi-chamber device a chamber with lubricant is sealed off on a rotationally drivable component from a second chamber at a peg of a power tool, by at least one seal sliding at a contact face, and least one stationary component is provided in the chamber with lubricant before the contact face and surrounds a rotationally drivable component at least over a region of a circumference to substantially prevent turbulence in the lubricant in a region of the contact face.
Abstract:
The present invention is based on a method for operating a guided power tool (10), in particular an electric power tool, with a rotatably and/or percussively driven insert tool (36), whereby the insert tool (36) is driven into a work piece (34) in a work process. It is proposed that at least one measured signal detected at the power tool (10) during the work process is evaluated to derive a property of the work piece (34) located in the working direction of the insert tool (36), and the power tool (10) is operated in accordance with the property. A guided power tool is also proposed.
Abstract:
A drilling and a percussion power tool and the tool holder, a housing, an air cushion percussion mechanism arranged in the housing and including a guiding tube, a piston reciprocating in the guiding tool, a striker reciprocating in the guiding tube, an air cushion chamber formed on the guiding tube between the striker and the piston, at least one control opening ventilating the air cushion chamber in an idling position of the percussion mechanism, a control part which in a percussion operation closes the at least one control opening for forming an air cushion in the air cushion chamber, and at least one additional opening formed in the guiding tube for ventilating of the air cushion chamber and arranged forwardly of the at least one control opening at a side of a tool so that in the percussion operation the at least one additional opening is covered by the striker.
Abstract:
A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
Abstract:
The present invention relates to a process for producing a catalyst for carrying out methanation reactions. The production of the catalyst is based on contacting of a hydrotalcite-comprising starting material with a fusible metal salt. The compounds brought into contact with one another are intimately mixed, thermally treated so that the metal salt fraction melts and subsequently subjected to a low-temperature calcination step and a high-temperature calcination step. The metal salt melt comprises at least one metal selected from the group consisting of K, La, Fe, Co, Ni, Cu and Ce, preferably Ni. The metal salt melt more preferably comprises/contains nickel nitrate hexahydrate. The hydrotalcite-comprising starting material is preferably hydrotalcite or a hydrotalcite-like compound as starting material, and the hydrotalcite-comprising starting material preferably comprises magnesium and aluminum as metal species.The catalyst of the invention is preferably used for carrying out methanation reactions at elevated pressures (from 10 to 50 bar) and elevated temperatures.
Abstract:
A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
Abstract:
Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
Abstract:
An integrated circuit includes a substrate. A surface region of the substrate includes a contact pad region. A passivation layer stack includes at least one passivation layer. The passivation layer stack is formed over the surface region and adjacent to the contact pad region. An upper portion of the passivation layer stack is removed in, in a portion of the passivation layer stack proximate the contact pad region.