公开(公告)号：US20130273262A1

公开(公告)日：2013-10-17

申请号：US13447035

申请日：2012-04-13

申请人： Manoj Vellaikal ,  Michael S. Cox ,  Hemant P. Mungekar ,  Chikuang C. Wang ,  Lin Zhang ,  Hari K. Ponnekanti ,  Michael P. Stewart ,  Edward P. Hammond, IV ,  Alexander S. Polyak

发明人： Manoj Vellaikal ,  Michael S. Cox ,  Hemant P. Mungekar ,  Chikuang C. Wang ,  Lin Zhang ,  Hari K. Ponnekanti ,  Michael P. Stewart ,  Edward P. Hammond, IV ,  Alexander S. Polyak

IPC分类号： C23C16/50

CPC分类号： C23C16/45565 ,  C23C16/45589 ,  C23C16/50 ,  C23C16/54

摘要： Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.

摘要翻译： 本文描述了使用线性等离子体源来控制膜沉积的方法和装置。 该装置包括：喷嘴，其中具有用于使气体流过其中的开口;输送机，用于支撑其上邻近喷淋头设置的一个或多个基板;以及用于使气体离子化的电源。 电离气体可以是用于在衬底上沉积材料的源气体。 可以例如使用包括在该装置中的气体整形装置来调节衬底上的材料的沉积轮廓。 附加地或替代地，沉积轮廓可以通过使用可启动喷头来调节。 该方法包括将衬底暴露于电离气体以在衬底上沉积膜，其中当衬底被输送到靠近喷头时，电离气体受到气体整形装置的影响，从而将膜均匀地沉积在衬底上。

公开(公告)号：US08492177B2

公开(公告)日：2013-07-23

申请号：US13307319

申请日：2011-11-30

申请人： Daping Yao ,  Peter I. Porshnev ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Manoj Vellaikal

发明人： Daping Yao ,  Peter I. Porshnev ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Manoj Vellaikal

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  H01L21/3115

摘要： Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.

摘要翻译： 本文提供了定量测量等离子浸渍工艺性能的方法。 在一些实施例中，使用包括沉积在硅层上方的氧化物层的第一衬底定量测量等离子体浸渍工艺的性能的方法可包括使第一衬底经受第一等离子体浸没室中的等离子体浸入工艺以形成 在第一衬底顶上的掺杂氧化物层; 以及通过在所述掺杂氧化物层的反射表面上照射光束来确定所述掺杂氧化物层的厚度; 检测来自掺杂氧化物层的反射表面的反射光束; 以及分析反射光束以确定第一衬底上的掺杂氧化物层的厚度。

公开(公告)号：US07867921B2

公开(公告)日：2011-01-11

申请号：US12204503

申请日：2008-09-04

申请人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

发明人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/045 ,  C23C16/4404 ,  C23C16/4405 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

摘要： A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.

摘要翻译： 通过向处理室提供季节前体的流动来调节处理室。 通过在处理室的顶部施加分配有大于70％的源功率的至少7500W的源功率，从季节前体形成高密度等离子体。 使用高密度等离子体在一个点沉积具有至少5000埃的厚度的季节层。 将多个基板中的每一个依次传送到处理室中以执行包括蚀刻的处理。 在基板的顺序转印之间清洁处理室。

公开(公告)号：US07628897B2

公开(公告)日：2009-12-08

申请号：US10660813

申请日：2003-09-12

申请人： Hemant P. Mungekar ,  Anjana M. Patel ,  Manoj Vellaikal ,  Anchuan Wang ,  Bikram Kapoor

发明人： Hemant P. Mungekar ,  Anjana M. Patel ,  Manoj Vellaikal ,  Anchuan Wang ,  Bikram Kapoor

IPC分类号： C23C14/35 ,  C23C16/00 ,  H01L21/311

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633

摘要： A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.

摘要翻译： 将膜沉积在设置在基板处理室中的基板上。 衬底具有形成在相邻的凸起表面之间的沟槽。 膜的第一部分通过化学气相沉积从流入处理室的第一气态混合物沉积在衬底上。 此后，通过使具有卤素前体，氢前体和氧前体的蚀刻剂气体流入处理室来蚀刻第一部分。 此后，膜的第二部分通过化学气相沉积从流过处理室的第二气态混合物沉积在衬底上。

公开(公告)号：US20090215251A1

公开(公告)日：2009-08-27

申请号：US12072495

申请日：2008-02-25

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/62 ,  G21K5/10

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

公开(公告)号：US20090215250A1

公开(公告)日：2009-08-27

申请号：US12072118

申请日：2008-02-22

申请人： Kartik Santhanam ,  Manoj Vellaikal ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Kartik Santhanam ,  Manoj Vellaikal ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/42

CPC分类号： H01L21/223 ,  H01L29/78

摘要： In plasma immersion ion implantation of a polysilicon gate, a hydride of the dopant is employed as a process gas to avoid etching the polysilicon gate, and sufficient argon gas is added to reduce added particle count to below 50 and to reduce plasma impedance fluctuations to 5% or less.

摘要翻译： 在多晶硅栅极的等离子体浸没离子注入中，掺杂剂的氢化物被用作处理气体以避免蚀刻多晶硅栅极，并且添加足够的氩气以将附加的颗粒数减少至低于50，并将等离子体阻抗波动减小至5 ％ 或更少。

公开(公告)号：US20090068853A1

公开(公告)日：2009-03-12

申请号：US12204523

申请日：2008-09-04

申请人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

发明人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

IPC分类号： H01L21/314

CPC分类号： C23C16/045 ,  C23C16/4408 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76229

摘要： Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.

摘要翻译： 公开了在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 氧化硅膜的第一部分使用高密度等离子体工艺沉积在衬底上并在间隙内。 此后，将氧化硅膜的沉积的第一部分的一部分回蚀刻。 这包括使卤素前体通过第一导管从卤素前体源流到基底处理室，从卤素前体形成高密度等离子体，并且在部分已被回蚀后终止流动卤素前体。 此后，卤素清除剂流到基板处理室以与基板处理室中的残留卤素反应。 此后，使用高密度等离子体处理，在氧化硅膜的第一部分和间隙内沉积第二部分氧化硅膜。

公开(公告)号：US20080153271A1

公开(公告)日：2008-06-26

申请号：US11958541

申请日：2007-12-18

申请人： Majeed A. Foad ,  Manoj Vellaikal ,  Kartik Santhanam

发明人： Majeed A. Foad ,  Manoj Vellaikal ,  Kartik Santhanam

IPC分类号： H01L21/425

CPC分类号： H01L21/3003 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/2236 ,  H01L21/31662

摘要： A method of preventing toxic gas formation after an implantation process is disclosed. Certain dopants, when implanted into films disposed on a substrate, may react when exposed to moisture to form a toxic gas and/or a flammable gas. By in-situ exposing the doped film to an oxygen containing compound, dopant that is shallowly implanted into the layer stack reacts to form a dopant oxide, thereby reducing potential toxic gas and/or flammable gas formation. Alternatively, a capping layer may be formed in-situ over the implanted film to reduce the potential generation of toxic gas and/or flammable gas.

摘要翻译： 公开了一种在注入工艺之后防止有毒气体形成的方法。 某些掺杂剂当植入设置在基材上的薄膜时，当暴露于水分时可能发生反应，形成有毒气体和/或可燃气体。 通过将掺杂的膜原位暴露于含氧化合物，浅层注入层堆叠的掺杂剂反应形成掺杂剂氧化物，从而减少潜在的有毒气体和/或可燃气体的形成。 或者，可以在植入膜上原位形成覆盖层以减少有毒气体和/或可燃气体的潜在产生。