利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

35 条记录 (耗时 0.027 秒)

    Ferroelectric memory and operating method therefor, and memory device
    21.
    发明授权
    Ferroelectric memory and operating method therefor, and memory device 有权
    铁电存储器及其操作方法及存储器件

    公开(公告)号：US06930906B2

    公开(公告)日：2005-08-16

    申请号：US10387869

    申请日：2003-03-14

    申请人： Shigeharu Matsushita ,  Yoh Takano ,  Satoru Sekine

    发明人： Shigeharu Matsushita ,  Yoh Takano ,  Satoru Sekine

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22

    摘要： A ferroelectric memory capable of improving disturbance resistance in a non-selected memory cell includes a bit line, a word line arranged to intersect with the bit line, and a memory cell, which is arranged between the bit line and the word line an includes a ferroelectric capacitor and a diode serially connected to the ferroelectric capacitor. Thus, when a voltage in a range hardly feeding a current to the diode is applied to a non-selected cell in data writing or data reading, substantially no voltage is applied to the ferroelectric capacitor.

    摘要翻译： 能够提高未选择存储单元中的抗干扰性的铁电存储器包括位线，布置成与位线相交的字线以及布置在位线和字线a之间的存储单元，包括： 铁电电容器和串联连接到铁电电容器的二极管。 因此，当在数据写入或数据读取中向非选择单元施加难以向二极管供给电流的范围内的电压时，基本上不向铁电体电容器施加电压。

    Field effect type semiconductor device and method of fabricating the same
    22.
    发明授权
    Field effect type semiconductor device and method of fabricating the same 失效
    场效应型半导体器件及其制造方法

    公开(公告)号：US6100547A

    公开(公告)日：2000-08-08

    申请号：US113386

    申请日：1998-07-10

    申请人： Shigeharu Matsushita

    发明人： Shigeharu Matsushita

    IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L29/47 ,  H01L29/812 ,  H01L27/085

    CPC分类号： H01L21/28581 ,  H01L29/475 ,  H01L29/8128

    摘要： A first electrode layer composed of Pt is formed on an operating layer, and a second electrode layer composed of a material which is different from Pt is formed on the operating layer so as to cover the first electrode layer. A buried electrode layer composed of Pt is formed in the operating layer under the first electrode layer. The first electrode layer, the second electrode layer and the buried electrode layer constitute a gate electrode.

    摘要翻译： 在工作层上形成由Pt构成的第一电极层，在工作层上形成由与Pt不同的材料构成的第二电极层，以覆盖第一电极层。 在第一电极层下方的工作层中形成由Pt构成的掩埋电极层。 第一电极层，第二电极层和掩埋电极层构成栅电极。

    Memory
    26.
    发明授权
    Memory 有权
    记忆

    公开(公告)号：US07420833B2

    公开(公告)日：2008-09-02

    申请号：US10936593

    申请日：2004-09-09

    申请人： Toru Dan ,  Naofumi Sakai ,  Shigeharu Matsushita ,  Yoshiyuki Ishizuka

    发明人： Toru Dan ,  Naofumi Sakai ,  Shigeharu Matsushita ,  Yoshiyuki Ishizuka

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22

    摘要： A memory capable of suppressing disturbance causing disappearance of data in a nonselected memory cell is provided. This memory comprises a memory cell array including a bit line, a word line arranged to intersect with the bit line and memory cells connected between the bit line and the word line, for accessing a selected memory cell thereby deteriorating a remanent polarization in an arbitrary memory cell and thereafter performing recovery for recovering all memory cells to remanent polarizations immediately after a write operation or remanent polarizations subjected to single application of a voltage applied to a nonselected memory cell in the access.

    摘要翻译： 提供了能够抑制导致非选择存储单元中的数据消失的存储器。 该存储器包括存储单元阵列，其包括位线，与位线相交的字线和连接在位线和字线之间的存储单元，用于访问选定的存储单元，从而降低任意存储器中的剩余极化 然后在执行写入操作之后立即恢复所有存储器单元以恢复所有存储器单元以进行恢复，以在单次施加施加到访问中的非选择存储单元的电压之后执行剩余极化。

    Dielectric device having dielectric film terminated by halogen atoms
    27.
    发明授权
    Dielectric device having dielectric film terminated by halogen atoms 有权
    具有由卤素原子终止的电介质膜的介电器件

    公开(公告)号：US07247900B2

    公开(公告)日：2007-07-24

    申请号：US10631858

    申请日：2003-08-01

    申请人： Kazunari Honma ,  Shigeharu Matsushita

    发明人： Kazunari Honma ,  Shigeharu Matsushita

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L28/60 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L28/55

    摘要： A dielectric device having excellent characteristics is provided. This dielectric device comprises such a first electrode layer that constituent elements located on its surface are terminated by halogen atoms and a dielectric film formed on the surface of the first electrode layer terminated by the halogen atoms. When the constituent elements for the first electrode layer located on the surface thereof are terminated by the halogen atoms in order to form a ferroelectric film having a bismuth layer structure, therefore, Bi constituting the ferroelectric film is inhibited from bonding to the constituent elements located on the surface of the first electrode layer.

    摘要翻译： 提供了具有优异特性的电介质器件。 该电介质器件包括这样的第一电极层，其表面上的构成元件被卤素原子封端，并且形成在由卤素原子终止的第一电极层的表面上的电介质膜。 为了形成具有铋层结构的铁电体膜，为了形成具有铋层结构的铁电体膜而将位于其表面上的第一电极层的构成元件端接，因此，阻止构成铁电体膜的Bi与位于 第一电极层的表面。

    Memory
    28.
    发明申请
    Memory 失效
    记忆

    公开(公告)号：US20070121365A1

    公开(公告)日：2007-05-31

    申请号：US11584491

    申请日：2006-10-23

    申请人： Yoshiki Murayama ,  Shigeharu Matsushita

    发明人： Yoshiki Murayama ,  Shigeharu Matsushita

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22 ,  G11C11/223 ,  G11C11/5657

    摘要： This memory comprises a bit line, a first word line and a second word line arranged to intersect with the bit line while holding the bit line therebetween and a first ferroelectric film and a second ferroelectric film, having capacitances different from each other, arranged between the bit line and the first word line and between the bit line and the second word line respectively at least on a region where the bit line and the first and second word lines intersect with each other. The bit line, the first word line and the first ferroelectric film constitute a first ferroelectric capacitor while the bit line, the second word line and the second ferroelectric film constitute a second ferroelectric capacitor, and the first ferroelectric capacitor and the second ferroelectric capacitor constitute a memory cell.

    摘要翻译： 该存储器包括位线，第一字线和第二字线，其被布置成在保持位线之间与位线相交并且具有电容彼此不同的第一铁电体膜和第二铁电体膜，第一铁电体膜和第二铁电体膜布置在 至少在位线和第一和第二字线彼此相交的区域上分别位于第一字线和第一字线之间以及位线与第二字线之间。 位线，第一字线和第一铁电体膜构成第一铁电电容器，而位线，第二字线和第二铁电体膜构成第二铁电电容器，并且第一铁电电容器和第二铁电电容器构成 记忆单元

    Ferroelectric memory and operating method therefor
    29.
    发明授权
    Ferroelectric memory and operating method therefor 有权
    铁电存储器及其操作方法

    公开(公告)号：US07167386B2

    公开(公告)日：2007-01-23

    申请号：US10304691

    申请日：2002-11-27

    申请人： Shigeharu Matsushita

    发明人： Shigeharu Matsushita

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22

    摘要： A ferroelectric memory capable of improving disturbance resistance in a non-selected cell by increasing the ratio between voltages applied to ferroelectric capacitors of a selected cell and the non-selected cell respectively is obtained. This ferroelectric memory comprises a bit line, a word line arranged to intersect with the bit line and a memory cell including a switching element arranged between the bit line and the word line and turned on with a threshold voltage having a substantially identical absolute value with respect to either of positive and negative voltage application directions and a ferroelectric capacitor arranged between the bit line and the word line and serially connected to the switching element.

    摘要翻译： 获得能够通过增加施加到所选择的单元的铁电电容器和非选择单元的电压之间的比率来提高未选择单元中的抗干扰性的铁电存储器。 该铁电存储器包括位线，布置成与位线相交的字线和包括布置在位线和字线之间的开关元件的存储单元，并且以相对于绝对值基本相同的阈值电压而导通 布置在位线和字线之间的串联连接到开关元件的强电介质电容器。

    Ferroelectric memory
    30.
    发明授权
    Ferroelectric memory 有权
    铁电存储器

    公开(公告)号：US06901002B2

    公开(公告)日：2005-05-31

    申请号：US10768018

    申请日：2004-02-02

    申请人： Shigeharu Matsushita

    发明人： Shigeharu Matsushita

    IPC分类号： G11C11/22 ,  G11C8/08 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

    CPC分类号： G11C8/08 ,  G11C11/22

    摘要： A ferroelectric memory capable of suppressing false data reading or the like by increasing a read margin is obtained. This ferroelectric memory comprises a circuit applying a read voltage VR to a first electrode and a detector capable of detecting the difference between electric capacitances Cf0 and Cf1 of a ferroelectric film when the potential difference of a second electrode corresponding to the difference between the electric capacitances Cf0 and Cf1 of the ferroelectric film is in excess of a detection limit voltage VS. The electric capacitance C2 of the second electrode is set to satisfy the following expression: Cf0

    摘要翻译： 获得能够通过增加读取余量来抑制伪数据读取等的铁电存储器。 该铁电存储器包括向第一电极施加读取电压V SUB的电路和能够检测电容C 1和C 2之间的差的检测器， 当第二电极的电位差对应于强电介质薄膜的电容C C 1和C 2 f1之间的差异超过了铁电薄膜时， 检测极限电压V S S。 第二电极的电容C 2 2被设定为满足以下表达式：<？in-line-formula description =“In-line Formulas”end =“lead”？> C < f0 <= 1/2 x {（C 1 -C 1 -C 6）f R R /（C 1 / C 2 + C 2）}。 <？in-line-formula description =“In-line Formulas”end =“tail”？>