公开(公告)号：US20050026456A1

公开(公告)日：2005-02-03

申请号：US10927141

申请日：2004-08-27

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： H01L21/027 ,  H01L21/00 ,  H01L21/20 ,  H01L21/288 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N)

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）

公开(公告)号：US06645881B2

公开(公告)日：2003-11-11

申请号：US10112951

申请日：2002-04-02

申请人： Nobuhide Yamada ,  Rempei Nakata ,  Makoto Sugiura ,  Mutsuhiko Yoshioka ,  Takahiro Kitano ,  Shinji Kobayashi

发明人： Nobuhide Yamada ,  Rempei Nakata ,  Makoto Sugiura ,  Mutsuhiko Yoshioka ,  Takahiro Kitano ,  Shinji Kobayashi

IPC分类号： H01L2131

CPC分类号： C23C18/1212 ,  B05D1/26 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31691

摘要： A coating solution for used in a scan coating method contains a low vapor pressure solvent having a vapor pressure lower than 1 Torr (133.322 Pa) at room temperature.

公开(公告)号：US5664989A

公开(公告)日：1997-09-09

申请号：US683265

申请日：1996-07-18

申请人： Rempei Nakata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Takeshi Nishioka ,  Yoshikuni Tateyama ,  Yutaka Nakano ,  Yasutaka Sasaki

发明人： Rempei Nakata ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Takeshi Nishioka ,  Yoshikuni Tateyama ,  Yutaka Nakano ,  Yasutaka Sasaki

IPC分类号： B24B37/20 ,  B24B37/22 ,  B24B37/24 ,  B24D13/14 ,  C08J5/14 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B37/22

摘要： A polishing pad comprises at least a first layer having a first main surface serving to polish a substrate to be polished and a second main surface, and a second layer positioned to face the second main surface of the first layer and having fine bags arranged therein, fluid being hermetically sealed in the fine bag.

摘要翻译： 抛光垫至少包括具有用于抛光待抛光基板的第一主表面和第二主表面的第一层，以及设置成面对第一层的第二主表面并且具有布置在其中的细小袋的第二层， 流体密封在细袋中。

公开(公告)号：US5607718A

公开(公告)日：1997-03-04

申请号：US300127

申请日：1994-09-02

申请人： Yasutaka Sasaki ,  Mie Matsuo ,  Rempei Nakata ,  Junichi Wada ,  Nobuo Hayasaka ,  Hiroyuki Yano ,  Haruo Okano

发明人： Yasutaka Sasaki ,  Mie Matsuo ,  Rempei Nakata ,  Junichi Wada ,  Nobuo Hayasaka ,  Hiroyuki Yano ,  Haruo Okano

IPC分类号： B24B37/015 ,  B24B49/14 ,  B24B57/02 ,  H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  B05D5/12 ,  C03C15/00 ,  H01L21/465

CPC分类号： B24B37/015 ,  B24B57/02 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/3213 ,  H01L21/7684

摘要： This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.

摘要翻译： 本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成待研磨的膜，以便至少填充凹部，并且通过在凹部中选择性地将被抛光的膜留在后面 通过使用含有研磨粒子和溶剂的研磨剂，pH为7.5以上来研磨该膜。 本发明还提供了一种抛光装置，其包括：用于存储抛光剂的抛光剂储存容器，用于抛光待抛光对象物的转盘，用于将抛光剂从抛光剂储存容器供应到转台上的抛光剂供给管， 抛光对象保持夹具，用于保持待抛光对象物，使被处理物体的表面与转盘相对;抛光剂供给管温度调节单元，连接到抛光剂供应管，用于调节抛光温度 代理商

公开(公告)号：US20110008545A1

公开(公告)日：2011-01-13

申请号：US12885934

申请日：2010-09-20

申请人： Shinichi ITO ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi ITO ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： B05D1/02

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将其供给到基板上形成液膜，其中喷嘴的排出口与基板的距离h设定为2mm以上且小于5×10 -5qγ（mm） ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec），常数为5×10-5（m·sec / N）。

公开(公告)号：US07446061B2

公开(公告)日：2008-11-04

申请号：US11633484

申请日：2006-12-05

申请人： Hiroshi Sato ,  Rempei Nakata ,  Yukio Nishiyama ,  Taketo Matsuda

发明人： Hiroshi Sato ,  Rempei Nakata ,  Yukio Nishiyama ,  Taketo Matsuda

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/31612 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

摘要： A semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen and hydrogen containing gases are introduced into the reaction chamber as process gases. A ratio of a gas flow of the hydrogen containing gas except the silicon containing gas to a total gas flow of the silicon containing gas and the oxygen containing gas defines a first gas-flow ratio. A ratio of a gas flow of the oxygen containing gas to that of the silicon containing gas defines a second gas-flow ratio. The first and second gas-flow ratios establish a linear function for a critical condition. A cluster formation condition is set up by relatively increasing the first gas-flow ratio while relatively decreasing the second gas-flow ratio with respect to the critical condition. A cluster suppression condition is also set up by relatively decreasing the first gas-flow ratio while relatively increasing the second gas-flow ratio with respect to the critical condition. The process gases are supplied to the reaction chamber under the cluster formation condition and under the cluster suppression condition, alternately, to form an insulating film buried in the groove.

摘要翻译： 将具有凹槽的半导体衬底放置在等离子体产生反应室中。 硅，氧和含氢气体作为工艺气体被引入到反应室中。 含硅气体以外的含氢气体的气体流量与含硅气体和含氧气体的总气体流量的比率定义为第一气体流量比。 含氧气体的气体流量与含硅气体的气体流量的比定义第二气体流量比。 第一和第二气体流量比建立了关键条件的线性函数。 通过相对增加第一气体流量比来建立簇形成条件，同时相对于临界条件相对降低第二气体流量比。 通过相对地降低第一气体流量比同时相对于临界条件相对增加第二气体流量比也建立了集束抑制条件。 处理气体在簇形成条件下并在簇抑制条件下交替地供给到反应室，以形成埋在槽中的绝缘膜。

公开(公告)号：US20080090001A1

公开(公告)日：2008-04-17

申请号：US11987653

申请日：2007-12-03

申请人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

发明人： Shinichi Ito ,  Tatsuhiko Ema ,  Kei Hayasaki ,  Rempei Nakata ,  Nobuhide Yamada ,  Katsuya Okumura

IPC分类号： C23C14/54 ,  B05C11/00

CPC分类号： H01L21/6715 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/31633

摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

摘要翻译： 公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动， 将所述溶液供给到所述基板上以形成液膜，其中所述喷嘴的排出口与所述基板之间的距离h被设定为不小于2mm并且在小于5×10 -5的范围内， 相对于溶液的表面张力γ（N / m）给出的SUP> qgamma（mm），通过排出口连续排出的溶液的排出速度q（m / sec）和5×10 -6 5（m.sec / N）。

公开(公告)号：US06224464B1

公开(公告)日：2001-05-01

申请号：US08763342

申请日：1996-12-11

申请人： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

发明人： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

IPC分类号： B24B100

CPC分类号： C09G1/02 ,  H01L21/31053

摘要： According to the present invention, there is provided a polishing method having the steps of forming a film to be polished, having a depressed portion and a protruding portion on a surface of a substrate, and polishing the film to be polished by relatively moving the substrate and a polishing table, while pressing the substrate having the film to be polished, onto a polishing cloth of the polishing table and supplying a polishing solution containing polishing grains, between the film to be polished and the polishing cloth, wherein an organic compound having a molecular weight of 100 or more, and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) is added to the polishing solution. Further, there are provided a polishing solution in which polishing grains are dispersed into a dispersion medium, and a polishing agent containing an organic compound having a molecular weight of 100 or more and containing at least one hydrophilic group selected from the group consisting of COOM1 (M represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group), SO3H (sulfo group) and SO3M2 (M2 represents an atom or a functional group which can form a salt when substituted with a hydrogen atom of a carboxyl group) added to the polishing solution.

摘要翻译： 根据本发明，提供了一种抛光方法，其具有以下步骤：在基板的表面上形成具有凹陷部分和突出部分的待抛光膜，并且通过相对移动基板来抛光待抛光的膜 以及研磨台，在将要研磨的膜的基板按压到研磨台的抛光布上，并在待抛光的薄膜和抛光布之间提供含有抛光颗粒的抛光液，其中具有 分子量为100以上，并且含有至少一个选自COOM1的亲水基团（M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基 基团）和SO 3 M 2（M2表示当被羧基的氢原子取代时可以形成盐的原子或官能团）加入到抛光溶胶 。 此外，提供了将研磨粒分散在分散介质中的研磨液，以及含有分子量为100以上且含有至少一个亲水性基团的研磨剂，所述亲水性基团选自COOM1（ M表示当被羧基的氢原子取代时可以形成盐的原子或官能团），SO 3 H（磺基）和SO 3 M 2（M 2表示当被取代时可以形成盐的原子或官能团 加入到抛光溶液中的羧基的氢原子）。

公开(公告)号：US5775980A

公开(公告)日：1998-07-07

申请号：US743044

申请日：1996-11-04

申请人： Yasutaka Sasaki ,  Mie Matsuo ,  Rempei Nakata ,  Junichi Wada ,  Nobuo Hayasaka ,  Hiroyuki Yano ,  Haruo Okano

发明人： Yasutaka Sasaki ,  Mie Matsuo ,  Rempei Nakata ,  Junichi Wada ,  Nobuo Hayasaka ,  Hiroyuki Yano ,  Haruo Okano

IPC分类号： B24B37/015 ,  B24B49/14 ,  B24B57/02 ,  H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  B24B5/00

CPC分类号： B24B37/015 ,  B24B57/02 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/3213 ,  H01L21/7684

摘要： This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.

摘要翻译： 本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成待研磨的膜，以便至少填充凹部，并且通过在凹部中选择性地将被抛光的膜留在后面 通过使用含有研磨粒子和溶剂的研磨剂，pH为7.5以上来研磨该膜。 本发明还提供了一种抛光装置，其包括：用于存储抛光剂的抛光剂储存容器，用于抛光待抛光对象物的转盘，用于将抛光剂从抛光剂储存容器供应到转台上的抛光剂供给管， 抛光对象保持夹具，用于保持待抛光对象物，使被处理物体的表面与转盘相对;抛光剂供给管温度调节单元，连接到抛光剂供应管，用于调节抛光温度 代理商

公开(公告)号：US5702673A

公开(公告)日：1997-12-30

申请号：US633551

申请日：1996-04-17

申请人： Naruhiko Kaji ,  Yutaka Nakano ,  Rempei Nakata ,  Minoru Harada ,  Ryoichi Shinjo ,  Manabu Tsujimura

发明人： Naruhiko Kaji ,  Yutaka Nakano ,  Rempei Nakata ,  Minoru Harada ,  Ryoichi Shinjo ,  Manabu Tsujimura

IPC分类号： C01B13/10 ,  C01B13/11

CPC分类号： C01B13/11 ,  C01B13/10

摘要： An ozone generating apparatus produces highly pure ozone gas which can be used in a semiconductor manufacturing process. The ozone generating apparatus comprises a high voltage source, an ozone generating cell which generates ozone gas by supplying a material gas while applying a high voltage from the high voltage source, and a passage for delivering the generated ozone gas from the ozone generating cell to a desired location. The passage comprises a material which has a passivation film formed by a passivation treatment in a dry process. The oxide passivation film comprises chromium oxide film, iron oxide film or a composite film of chromium oxide and iron oxide.

摘要翻译： 臭氧发生装置产生可用于半导体制造工艺的高纯度臭氧气体。 臭氧发生装置包括高电压源，臭氧发生电池，其通过在从高电压源施加高电压的同时供给材料气体而产生臭氧气体，以及用于将产生的臭氧气体从臭氧发生电池输送到 理想位置。 该通道包括具有通过在干法中的钝化处理形成的钝化膜的材料。 氧化物钝化膜包括氧化铬膜，氧化铁膜或氧化铬和氧化铁的复合膜。