公开(公告)号：US06682991B1

公开(公告)日：2004-01-27

申请号：US09448584

申请日：1999-11-24

申请人： Tomonori Hino ,  Takeharu Asano ,  Tsunenori Asatsuma ,  Satoru Kijima ,  Kenji Funato ,  Shigetaka Tomiya

发明人： Tomonori Hino ,  Takeharu Asano ,  Tsunenori Asatsuma ,  Satoru Kijima ,  Kenji Funato ,  Shigetaka Tomiya

IPC分类号： H01L2120

CPC分类号： H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0332 ,  H01S5/2077 ,  H01S5/32341

摘要： When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a Si02, for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.

摘要翻译： 当在衬底上制造生长掩模并且使用生长掩模在衬底上选择性地生长氮化物III-V化合物半导体时，使用包括至少形成其顶表面的氮化物的多层膜作为生长掩模。 生长掩模可以是其上的氧化物膜和氮化物膜的组合，其上的金属膜和氮化物膜的组合，氧化物膜，由氮化物和氧化物组成的膜以及氮化物膜上的氮化物膜的组合 ，或第一金属膜，与第一金属膜不同的第二金属膜和其上的氮化物膜的组合。 氧化膜可以是SiO 2，例如，氮化膜可以是TiN膜或SiN膜，由氮化物和氧化物构成的膜可以是SiNO膜，并且金属膜可以是Ti膜或 例如Pt膜。

公开(公告)号：US6081001A

公开(公告)日：2000-06-27

申请号：US815205

申请日：1997-03-12

申请人： Kenji Funato ,  Tsunenori Asatsuma ,  Hiroji Kawai

发明人： Kenji Funato ,  Tsunenori Asatsuma ,  Hiroji Kawai

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/32

摘要： A luminous intensity of a semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors is improved by having a thickness d of a light emitting layer (active layer) of the semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors ranging from 0.3 nm to 1.5 nm.

摘要翻译： 具有由氮化物III-V族化合物半导体形成的多层结构的半导体发光器件的发光强度通过使半导体发光器件的发光层（有源层）的厚度d具有多层结构， 由0.3nm至1.5nm的氮化物III-V族化合物半导体形成的层结构。

公开(公告)号：US07965749B2

公开(公告)日：2011-06-21

申请号：US12237547

申请日：2008-09-25

申请人： Shoji Hirata ,  Tsunenori Asatsuma ,  Yoshiro Takiguchi

发明人： Shoji Hirata ,  Tsunenori Asatsuma ,  Yoshiro Takiguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  H01S5/0207 ,  H01S5/1064 ,  H01S5/1085 ,  H01S5/2036 ,  H01S5/2054 ,  H01S5/2235 ,  H01S2301/18 ,  H01S2301/206

摘要： Provided is a laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

摘要翻译： 提供了实现具有稳定且均匀形状的NFP的激光二极管。 激光二极管在半导体衬底上包括有源层，限制被注入有源层的电流的一个或多个条状电流限制结构以及包括一个或多个条形凸起的堆叠结构 部分沿电流限制结构的延伸方向延伸。

公开(公告)号：US20090092163A1

公开(公告)日：2009-04-09

申请号：US12237547

申请日：2008-09-25

申请人： Shoji Hirata ,  Tsunenori Asatsuma ,  Yoshiro Takiguchi

发明人： Shoji Hirata ,  Tsunenori Asatsuma ,  Yoshiro Takiguchi

IPC分类号： H01S5/02 ,  H01L21/02

CPC分类号： H01S5/22 ,  H01S5/0207 ,  H01S5/1064 ,  H01S5/1085 ,  H01S5/2036 ,  H01S5/2054 ,  H01S5/2235 ,  H01S2301/18 ,  H01S2301/206

摘要： Provided is a laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

摘要翻译： 提供了实现具有稳定且均匀形状的NFP的激光二极管。 激光二极管在半导体衬底上包括有源层，限制被注入有源层的电流的一个或多个条状电流限制结构以及包括一个或多个条形凸起的堆叠结构 部分沿电流限制结构的延伸方向延伸。

公开(公告)号：US20080049803A1

公开(公告)日：2008-02-28

申请号：US11882055

申请日：2007-07-30

申请人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Hitoshi Nakamura ,  Tsukuru Ohtoshi ,  Takeshi Kikawa ,  Sumiko Fujisaki ,  Shigehisa Tanaka

发明人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Hitoshi Nakamura ,  Tsukuru Ohtoshi ,  Takeshi Kikawa ,  Sumiko Fujisaki ,  Shigehisa Tanaka

IPC分类号： H01S5/347

CPC分类号： H01S5/327 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/347 ,  H01S2301/173 ,  H01S2304/02

摘要： The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.

摘要翻译： 本发明提供一种使用InP衬底并具有能够在室温下连续振荡的层叠结构的基于II族的II-VI族半导体激光器。 通过在InP衬底上使用含Be的晶格匹配的II-VI半导体构成半导体激光器的基本结构。 活性激光器，光导层和包覆层以具有I型带阵列的双异质结构构成，以提高载流子对活性层的注入效率。 此外，构成能够增强对有源层的光学限制的有源层，导光层和包层，并且包层由块状晶体构成。

公开(公告)号：US20050254538A1

公开(公告)日：2005-11-17

申请号：US11123168

申请日：2005-05-06

申请人： Tsunenori Asatsuma ,  Yoshiro Takiguchi ,  Shoji Hirata

发明人： Tsunenori Asatsuma ,  Yoshiro Takiguchi ,  Shoji Hirata

IPC分类号： H01S5/22 ,  H01S5/00 ,  H01S5/028 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223

CPC分类号： H01S5/1082 ,  H01S5/0286 ,  H01S5/1014 ,  H01S5/204 ,  H01S5/2063 ,  H01S5/2072 ,  H01S5/2214 ,  H01S5/2231

摘要： A laser diode capable of effectively inhibiting effects of return light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface thereof, on the substrate, wherein a return light inhibition part is provided on a main-emitting-side end face, and effects of return light in the vicinity of lateral boundaries of the light emitting region are inhibited by the return light inhibition part.

摘要翻译： 提供了能够有效地抑制返回光的效果的激光二极管。 激光二极管包括基板，以及包括第一导电半导体层，具有发光区域的有源层和在其表面上具有突出部分的第二导电半导体层的层压结构，其中返回光 抑制部分设置在主发光侧端面上，并且返回光抑制部分抑制了发光区域的侧边界附近的返回光的影响。

公开(公告)号：US20050227392A1

公开(公告)日：2005-10-13

申请号：US11148771

申请日：2005-06-09

申请人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

发明人： Tsunenori Asatsuma ,  Shigetaka Tomiya ,  Koshi Tamamura ,  Tsuyoshi Tojo ,  Osamu Goto ,  Kensaku Motoki

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40 ,  H01L21/00 ,  H01L29/22

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/173

摘要： When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

摘要翻译： 当半导体发光器件或半导体器件通过在由氮化物III-V化合物半导体衬底构成的氮化物III-V化合物半导体衬底上生长氮化物III-V化合物半导体层（其将形成发光器件结构或器件结构） 具有第一平均位错密度的晶体的形式和具有高于第一平均位错密度的第二平均位错密度并在第一区域中周期性排列的多个第二区域，器件区域被限定在氮化物III-V化合物半导体衬底 使得器件区域基本上不包括第二区域，最终获得的器件的发射区域或有源区域不包括第二区域。

公开(公告)号：US06620641B2

公开(公告)日：2003-09-16

申请号：US10172839

申请日：2002-06-17

申请人： Takashi Yamaguchi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Takashi Kobayashi ,  Tsunenori Asatsuma ,  Takeharu Asano ,  Tomonori Hino

发明人： Takashi Yamaguchi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Takashi Kobayashi ,  Tsunenori Asatsuma ,  Takeharu Asano ,  Tomonori Hino

IPC分类号： H01L2100

CPC分类号： H01S5/32341 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/2231

摘要： A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO2 film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO2 film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO2 film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.

公开(公告)号：US06362016B1

公开(公告)日：2002-03-26

申请号：US09557770

申请日：2000-04-25

申请人： Kenji Funato ,  Tsunenori Asatsuma ,  Hiroji Kawai

发明人： Kenji Funato ,  Tsunenori Asatsuma ,  Hiroji Kawai

IPC分类号： H01L2100

CPC分类号： H01L33/32

摘要： A luminous intensity of a semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors is improved by having a thickness d of a light emitting layer (active layer) of the semiconductor light emitting device having a multi-layer structure of nitride group III-V compound semiconductors ranging from 0.3 nm to 1.5 nm.

摘要翻译： 具有由氮化物III-V族化合物半导体形成的多层结构的半导体发光器件的发光强度通过使半导体发光器件的发光层（有源层）的厚度d具有多层结构， 氮化物III-V族化合物半导体的层结构为0.3nm至1.5nm。

公开(公告)号：US6043140A

公开(公告)日：2000-03-28

申请号：US867964

申请日：1997-06-03

申请人： Hiroji Kawai ,  Tsunenori Asatsuma ,  Fumihiko Nakamura

发明人： Hiroji Kawai ,  Tsunenori Asatsuma ,  Fumihiko Nakamura

IPC分类号： C23C16/34 ,  C30B25/02 ,  C30B29/38 ,  H01L21/04 ,  H01L21/205 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323

CPC分类号： H01L33/325 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262

摘要： A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, a p-type nitride compound semiconductor, such as p-type GaN, is grown by metal organic chemical vapor deposition methods using a nitrogen source material which does not release hydrogen during release of nitrogen and the semiconductor is grown in an inactive gas. The nitrogen source materials may be selected from nitrogen compounds that contain hydrogen radicals and alkyl radicals and/or phenyl radicals provided that the total amount of hydrogen radicals is less than or equal to the sum total of alkyl radicals and phenyl radicals present in the nitrogen compound used as the nitrogen source material.