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131 条记录 (耗时 0.03 秒)

    Methods and apparatus for barrier interface preparation of copper interconnect
    21.
    发明申请
    Methods and apparatus for barrier interface preparation of copper interconnect 审中-公开
    铜互连屏障界面制备方法及装置

    公开(公告)号：US20080057198A1

    公开(公告)日：2008-03-06

    申请号：US11639050

    申请日：2006-12-13

    申请人： Hyungsuk Alexander Yoon ,  John Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

    发明人： Hyungsuk Alexander Yoon ,  John Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

    IPC分类号： C23C16/00 ,  B05D3/00 ,  B05D1/36

    CPC分类号： H01L21/67196 ,  C23C14/22 ,  C23C16/06 ,  C23C16/44 ,  C23C16/45544 ,  C23C16/52 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/38 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028 ,  H01L21/67161 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/6723 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76879

    摘要： The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect. The adhesion between the barrier layer and the copper layer can be improved by making the barrier layer metal-rich prior copper deposition and by limiting the amount of oxygen the barrier layer is exposed prior to copper deposition. Alternatively, a functionalization layer can be deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect with good adhesion between the barrier layer and the copper layer. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in an integrated system in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method also includes depositing the functionalization layer over the metallic layer in the integrated system. The method further includes depositing the copper layer in the copper interconnect structure in the integrated system after the functionalization layer is deposited over the metallic barrier layer.

    摘要翻译： 实施例满足了通过能够在铜互连中沉积薄且保形的阻挡层和铜层来改善电迁移并减少铜互连的应力诱导空隙的需要。 阻挡层和铜层之间的粘附性可以通过在铜沉积之前使阻挡层富金属的先前铜沉积和限制阻挡层暴露的氧的量来改善。 或者，功能化层可以沉积在阻挡层上，以使得铜层能够在铜互连中沉积，并且在阻挡层和铜层之间具有良好的粘合性。 一种制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以帮助在一个集成系统中铜层互连中铜层沉积以便改善铜互连的电迁移性能的示例性方法 被提供。 该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，其中在沉积金属阻挡层之后，将基底在受控环境中转移和加工以防止形成金属阻挡氧化物。 该方法还包括在集成系统中的金属层上沉积功能化层。 该方法还包括在官能化层沉积在金属阻挡层上之后，在集成系统中的铜互连结构中沉积铜层。

    Apparatus and Method for Confined Area Planarization
    28.
    发明申请
    Apparatus and Method for Confined Area Planarization 有权
    密闭面平面化装置与方法

    公开(公告)号：US20080227369A1

    公开(公告)日：2008-09-18

    申请号：US12129612

    申请日：2008-05-29

    申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

    发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

    IPC分类号： B24B57/02 ,  H05K3/07 ,  C25F3/00

    CPC分类号： H01L21/32115 ,  C25F7/00

    摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

    摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

    ELECTROLESS PLATING METHOD AND APPARATUS
    29.
    发明申请
    ELECTROLESS PLATING METHOD AND APPARATUS 有权
    电镀方法和装置

    公开(公告)号：US20080085370A1

    公开(公告)日：2008-04-10

    申请号：US11539155

    申请日：2006-10-05

    申请人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

    发明人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

    IPC分类号： B05D1/18 ,  B05C3/00

    CPC分类号： C23C18/1617 ,  C23C18/163 ,  C23C18/1678 ,  H01L21/67092

    摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.

    摘要翻译： 提供无电镀系统。 该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。 该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面 使得电镀溶液接触两个顶表面。 还提供了一种将无电镀液施加到基底上的方法。