公开(公告)号：US10332814B2

公开(公告)日：2019-06-25

申请号：US15047098

申请日：2016-02-18

Applicant: Infineon Technologies AG

Inventor： Claus Von Waechter ,  Christian Altschaeffl ,  Holger Doepke ,  Uwe Hoeckele ,  Franz Xaver Muehlbauer ,  Daniel Porwol ,  Tobias Schmidt ,  Christian Schweiger ,  Carsten Von Koblinski

IPC: H01L23/26 ,  H01L23/00 ,  H01L23/31

Abstract: A bonded system includes a reconstituted wafer including a hygroscopic material. A moisture barrier layer is arranged over a surface of the reconstituted wafer. An adhesive layer is arranged over a surface of the moisture barrier opposite the reconstituted wafer. A carrier is arranged over a surface of the adhesive layer opposite the moisture barrier. The adhesive layer adhesively bonds the reconstituted wafer and the carrier together.

公开(公告)号：US09728480B2

公开(公告)日：2017-08-08

申请号：US14699704

申请日：2015-04-29

Applicant: Infineon Technologies AG

Inventor： Kurt Matoy ,  Hubert Maier ,  Christian Krenn ,  Elfriede Kraxner Wellenzohn ,  Helmut Schoenherr ,  Juergen Steinbrenner ,  Markus Kahn ,  Silvana Fister ,  Christoph Brunner ,  Herbert Gietler ,  Uwe Hoeckele

IPC: H01L21/3105 ,  H01L23/31 ,  H01L21/02 ,  H01L23/29

CPC classification number: H01L23/3171 ,  H01L21/0206 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/76801 ,  H01L23/291

Abstract: A passivation layer and a method of making a passivation layer are disclosed. In one embodiment the method for manufacturing a passivation layer includes depositing a first silicon based dielectric layer on a workpiece, the first silicon based dielectric layer comprising nitrogen, and depositing in-situ a second silicon based dielectric layer on the first silicon based dielectric layer, the second dielectric layer comprising oxygen.

公开(公告)号：US20150194398A1

公开(公告)日：2015-07-09

申请号：US14662944

申请日：2015-03-19

Applicant: Infineon Technologies AG

Inventor： Roland Hampp ,  Thomas Fischer ,  Uwe Hoeckele

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L24/03 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/76837 ,  H01L21/76838 ,  H01L22/32 ,  H01L23/498 ,  H01L24/05 ,  H01L24/06 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0347 ,  H01L2224/03903 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/051 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05187 ,  H01L2224/05562 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/056 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/06051 ,  H01L2224/06102 ,  H01L2224/06505 ,  H01L2224/06515 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0428 ,  H01L2924/0518 ,  H01L2924/0529 ,  H01L2924/14 ,  H01L2924/01015 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A semiconductor device and method are disclosed. The semiconductor device includes a substrate having a first region and a second region and an insulating layer arranged on the substrate. A first conductive layer is arranged in or on insulating layer in the first region and a second conductive layer is arranged in or on the insulating layer in the second region. The first conductive layer comprises a first conductive material and the second conductive layer comprises a second conductive material wherein the first conductive material is different than the second conductive material. A metal layer is arranged on the first conductive layer.

Abstract translation: 公开了半导体器件和方法。 半导体器件包括具有第一区域和第二区域的衬底以及布置在衬底上的绝缘层。 第一导电层布置在第一区域中的绝缘层中或绝缘层中，并且第二导电层布置在第二区域中的绝缘层中或其上。 第一导电层包括第一导电材料，第二导电层包括第二导电材料，其中第一导电材料不同于第二导电材料。 金属层布置在第一导电层上。

公开(公告)号：US20150087145A1

公开(公告)日：2015-03-26

申请号：US14555297

申请日：2014-11-26

Applicant: Infineon Technologies AG

Inventor： Uwe Hoeckele

IPC: H01L21/768

CPC classification number: H01L21/76886 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/02675 ,  H01L21/76823 ,  H01L21/76838 ,  H01L21/76867 ,  H01L23/53276 ,  H01L45/149 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/81 ,  H01L2924/00

Abstract: A chip includes an integrated circuit and a carbonic layer. The carbonic layer includes a graphite-like carbon, wherein a lateral conducting path through the graphite-like carbon electrically connects two circuit elements of the integrated circuit.

Abstract translation: 芯片包括集成电路和碳层。 碳层包括石墨状碳，其中通过石墨状碳的横向导电路径电连接集成电路的两个电路元件。