公开(公告)号：US20180122895A1

公开(公告)日：2018-05-03

申请号：US15793530

申请日：2017-10-25

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Hans Weber ,  Hans-Joachim Schulze ,  Johannes Georg Laven ,  Werner Schustereder

IPC: H01L29/06 ,  H01L21/324 ,  H01L29/36 ,  H01L29/167 ,  H01L29/32 ,  H01L21/225 ,  H01L29/10 ,  H01L29/08 ,  H01L29/872 ,  H01L21/66 ,  H01L21/78 ,  H01L21/265 ,  H01L29/66 ,  H01L21/30 ,  H01L29/78 ,  H01L29/739

CPC classification number: H01L29/0615 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/3003 ,  H01L21/324 ,  H01L21/3242 ,  H01L21/78 ,  H01L22/14 ,  H01L22/20 ,  H01L29/0684 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66143 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/739 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/8611 ,  H01L29/872

Abstract: Crystal lattice defects are generated in a horizontal surface portion of a semiconductor substrate and hydrogen-related donors are formed in the surface portion. Information is obtained about a cumulative dopant concentration of dopants, including the hydrogen-related donors, in the surface portion. Based on the information about the cumulative dopant concentration and a dissociation rate of the hydrogen-related donors, a main temperature profile is determined for dissociating a defined portion of the hydrogen-related donors. The semiconductor substrate is subjected to a main heat treatment applying the main temperature profile to obtain, in the surface portion, a final total dopant concentration deviating from a target dopant concentration by not more than 15%.

公开(公告)号：US20170162459A1

公开(公告)日：2017-06-08

申请号：US14962835

申请日：2015-12-08

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Moriz Jelinek ,  Werner Schustereder ,  Hans-Joachim Schulze

IPC: H01L21/66 ,  H01J37/244 ,  H01L21/683 ,  H01J37/317 ,  H01L21/265 ,  H01L21/67

CPC classification number: H01L22/26 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/2001 ,  H01L21/265 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/6835

Abstract: An apparatus and a method for implanting ions are disclosed. In an embodiment, the apparatus includes a receptacle configured to support the wafer, a source of dopants configured to selectively provide dopants to an implantation region of the wafer and a source of radiation configured to selectively irradiate the implantation region.

公开(公告)号：US09564495B2

公开(公告)日：2017-02-07

申请号：US15081487

申请日：2016-03-25

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Hans-Joachim Schulze ,  Moriz Jelinek ,  Werner Schustereder

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L29/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/306 ,  H01L21/324 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  H01L21/322 ,  H01L29/78 ,  H01L29/86 ,  H01L29/739 ,  H01L29/74

CPC classification number: H01L29/32 ,  H01L21/2253 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/306 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/3242 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7395 ,  H01L29/74 ,  H01L29/7802 ,  H01L29/86

Abstract: A semiconductor device includes a semiconductor body with parallel first and second surfaces and containing hydrogen-related donors. A concentration profile of the hydrogen-related donors vertical to the first surface includes a maximum value of at least 1E15 cm−3 at a first distance to the first surface and does not fall below 1E14 cm−3 over at least 60% of an interval between the first surface and the first distance.

Abstract translation: 半导体器件包括具有平行的第一和第二表面并且含有氢的相关供体的半导体本体。 垂直于第一表面的氢相关供体的浓度分布包括在距第一表面的第一距离处的至少1E15cm-3的最大值，并且在间隔的至少60％内不低于1E14cm-3 在第一表面和第一距离之间。

公开(公告)号：US20160172438A1

公开(公告)日：2016-06-16

申请号：US14952337

申请日：2015-11-25

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Johannes Georg Laven ,  Hans-Joachim Schulze ,  Werner Schustereder

IPC: H01L29/06 ,  H01L21/266 ,  H01L29/78 ,  H01L29/04 ,  H01L29/10 ,  H01L29/66 ,  H01L21/265 ,  H01L21/66

CPC classification number: H01L29/0634 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/3242 ,  H01L22/14 ,  H01L22/20 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/32 ,  H01L29/407 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7813

Abstract: A first doped region is formed in a single crystalline semiconductor substrate. Light ions are implanted through a process surface into the semiconductor substrate to generate crystal lattice vacancies between the first doped region and the process surface, wherein a main beam axis of an implant beam used for implanting the light ions deviates by at most 1.5 degree from a main crystal direction along which channeling of the light ions occurs. A second doped region with a conductivity type opposite to the first doped region is formed based on the crystal lattice vacancies and hydrogen atoms.

Abstract translation: 第一掺杂区形成在单晶半导体衬底中。 将轻离子通过工艺表面注入到半导体衬底中，以在第一掺杂区域和工艺表面之间产生晶格空位，其中用于注入轻离子的注入束的主光束轴离离最远1.5度 发生轻离子的通道的主晶体方向。 基于晶格空位和氢原子形成具有与第一掺杂区相反的导电类型的第二掺杂区。

公开(公告)号：US20240194444A1

公开(公告)日：2024-06-13

申请号：US18524043

申请日：2023-11-30

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Axel König ,  Bernhard Leitl

IPC: H01J37/317 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24535 ,  H01J2237/31703

Abstract: An ion beam current measurement device includes a first Faraday cup having a first ion beam entrance slit of a first width W1. The first Faraday cup is configured to generate a first current signal. The device further includes a second Faraday cup having a second ion beam entrance slit of a second width W2. The second Faraday cup is configured to generate a second current signal. The slit widths are designed such that W2 is greater than W1.

公开(公告)号：US20240154020A1

公开(公告)日：2024-05-09

申请号：US18500635

申请日：2023-11-02

Applicant: Infineon Technologies AG

Inventor： Benedikt Stoib ,  Hans-Joachim Schulze ,  Marten Müller ,  Daniel Schlögl ,  Moriz Jelinek ,  Holger Schulze

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/861

CPC classification number: H01L29/66136 ,  H01L29/0615 ,  H01L29/8611

Abstract: A semiconductor device includes a semiconductor body having first and second opposite surfaces along a vertical direction, and an active diode area. The active diode area includes: a p-doped anode region adjoining the first surface; an n-doped drift region between the anode region and the second surface; an n-doped cathode contact region adjoining the second surface; a p-doped injection region adjoining the second surface and the cathode contact region; and a p-doped auxiliary region between the drift region and the cathode contact region. The auxiliary region includes first and second sub-regions. In a top view, the first sub-region covers at least part of the injection region and the second sub-region covers at least part of the cathode contact region. In the top view, the auxiliary region includes a plurality of openings covering from 0.1% to an 20% of a surface area of the active diode area at the second surface.

公开(公告)号：US11908694B2

公开(公告)日：2024-02-20

申请号：US17127309

申请日：2020-12-18

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Michael Hell ,  Caspar Leendertz ,  Kristijan Luka Mletschnig ,  Hans-Joachim Schulze

IPC: H01J37/317 ,  H01L21/265 ,  H01L21/04 ,  H01L29/36

CPC classification number: H01L21/26586 ,  H01J37/3171 ,  H01L21/046 ,  H01L21/047 ,  H01L21/265 ,  H01L21/2652 ,  H01L29/36 ,  H01J2237/24578 ,  H01J2237/31703

Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

公开(公告)号：US11764063B2

公开(公告)日：2023-09-19

申请号：US16886175

申请日：2020-05-28

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Romain Esteve ,  Moriz Jelinek ,  Caspar Leendertz ,  Werner Schustereder

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L21/047 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/7813

Abstract: A silicon carbide substrate is provided that includes a drift layer of a first conductivity type and a trench extending from a main surface of the silicon carbide substrate into the drift layer. First dopants are implanted through a first trench sidewall of the trench. The first dopants have a second conductivity type and are implanted at a first implant angle into the silicon carbide substrate, wherein at the first implant angle channeling occurs in the silicon carbide substrate. The first dopants form a first compensation layer extending parallel to the first trench sidewall.

公开(公告)号：US20220406947A1

公开(公告)日：2022-12-22

申请号：US17838339

申请日：2022-06-13

Applicant: Infineon Technologies AG

Inventor： Benedikt Stoib ,  Moriz Jelinek ,  Marten Mueller ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Holger Schulze

IPC: H01L29/861 ,  H01L29/36 ,  H01L29/06 ,  H01L21/265 ,  H01L29/66

Abstract: A semiconductor device includes: a drift region of a first conductivity type arranged between first and second surfaces of a semiconductor body; a first region of the first conductivity type at the second surface; a second region of a second conductivity type adjacent the first region at the second surface; a field stop region of the first conductivity type between the drift region and second surface; and a first electrode on the second surface directly adjacent to the first region in a first part of the second surface and to the second region in a second part of the second surface. The field stop region includes first and second sub-regions. Over a predominant portion of the first part of the second surface, the second sub-region directly adjoins the first region and includes dopants of the second conductivity type that partially compensate dopants of the first conductivity type.

公开(公告)号：US11195695B2

公开(公告)日：2021-12-07

申请号：US16112178

申请日：2018-08-24

Applicant: Infineon Technologies AG

Inventor： Moriz Jelinek ,  Michael Brugger ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Peter Zupan

IPC: H01J37/317 ,  H01L21/265 ,  H01J37/302 ,  H01J37/304 ,  H01L21/04 ,  H01L29/08 ,  H01L29/16

Abstract: An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.